Abstract:
According to some embodiments, an apparatus includes a substrate that defines a plane. The apparatus also includes a first conducting plate that is substantially normal to the substrate and a second conducting plate that is (i) substantially normal to the substrate and (ii) deformable in response to a pressure.
Abstract:
According to some embodiments, a conducting layer is formed on a first wafer. An insulating layer is formed on a second wafer. The insulating layer includes a cavity and a conducting area may be formed in the second wafer proximate to the cavity. The side of the conducting layer opposite the first wafer is bonded to the side of the insulating layer opposite the second wafer. At least some of the first wafer is then removed, without removing at least some of the conducting layer, to form a conducting diaphragm that is substantially parallel to the second wafer. In this way, an amount of capacitance between the diaphragm and the conducting area may be measured to determine an amount of pressure being applied to the diaphragm.
Abstract:
A system is presented. The system includes a micro-electromechanical system switch. Further, the system includes a balanced diode bridge configured to suppress arc formation between contacts of the micro-electromechanical system switch. A pulse circuit is coupled to the balanced diode bridge to form a pulse signal in response to a fault condition. An energy-absorbing circuitry is coupled in a parallel circuit with the pulse circuit and is adapted to absorb electrical energy resulting from the fault condition without affecting a pulse signal formation by the pulse circuit.
Abstract:
An ignition device for a gas appliance is provided. The ignition device includes a membrane and a plurality of heating elements embedded in the membrane, wherein the heating elements comprise a plurality of patterned resistors and wherein the plurality of heating elements are configured to heat a surface on application of voltage through the heating elements. The ignition device also includes a cavity disposed adjacent to the heating elements and configured to provide thermal isolation of the heating elements.
Abstract:
A differential pressure sensing system is provided. The sensing system includes a membrane layer having a channel extending diametrically therein, and including one or more cavities provided radially outbound of the channel and at least one resonant beam disposed in the channel and configured to oscillate at a desired frequency. The system further includes sensing circuitry configured to detect oscillation of the at least one resonant beam indicative of deformation in the membrane layer.
Abstract:
A device for controlling the flow of electric current is provided. The device comprises a first conductor; a second conductor switchably coupled to the first conductor to alternate between an electrically connected state with the first conductor and an electrically disconnected state with the first conductor. At least one conductor further comprises an electrical contact, the electrical contact comprising a solid matrix comprising a plurality of pores; and a filler material disposed within at least a portion of the plurality of pores. The filler material has a melting point of less than about 575K. A method to make an electrical contact is provided. The method includes the steps of: providing a substrate; providing a plurality of pores on the substrate; and disposing a filler material within at least a portion of the plurality of pores. The filler material has a melting point of less than about 575K.
Abstract:
According to some embodiments, an apparatus includes a substrate that defines a plane. The apparatus also includes a first conducting plate that is substantially normal to the substrate and a second conducting plate that is (i) substantially normal to the substrate and (ii) deformable in response to a pressure.
Abstract:
According to some embodiments, a conducting layer is formed on a first wafer. An insulating layer is formed on a second wafer. The insulating layer includes a cavity and a conducting area may be formed in the second wafer proximate to the cavity. The side of the conducting layer opposite the first wafer is bonded to the side of the insulating layer opposite the second wafer. At least some of the first wafer is then removed, without removing at least some of the conducting layer, to form a conducting diaphragm that is substantially parallel to the second wafer. In this way, an amount of capacitance between the diaphragm and the conducting area may be measured to determine an amount of pressure being applied to the diaphragm.
Abstract:
A method to reduce an inductive voltage surge across a switch array is disclosed. The method comprises the steps of, (a) directing at least a portion of an electric current away from at least a portion of said switch array; and (b) independently opening different portions of the switch array. A system to reduce an inductive voltage surge across an electrical device comprising a current bypass circuit is also disclosed.
Abstract:
A current control device is disclosed. The current control device includes control circuitry integrally arranged with a current path and at least one micro electromechanical system (MEMS) switch disposed in the current path. The current control device further includes a hybrid arcless limiting technology (HALT) circuit connected in parallel with the at least one MEMS switch facilitating arcless opening of the at least one MEMS switch, and a pulse assisted turn on (PATO) circuit connected in parallel with the at least one MEMS switch facilitating arcless closing of the at least one MEMS switch.