摘要:
A cryogenic pump for liquefied gases is provided, which shortens precooling time, has a small loss of cryogenic liquefied gas, excels in pump efficiency, and is advantageous in cost. A motor 1 and an impeller 2 are coupled by a shaft 3 for transmitting a rotative drive force therebetween, and the motor 1 is arranged on an upper side and the impeller 2 is arranged on a lower side. The motor 1 and the impeller 2 exist in an enclosed space 14 where they are communicated with each other and into which the cryogenic liquefied gas is introduced. A heat adjusting unit 11 is provided between the motor 1 and the impeller 2, the heat adjusting unit maintaining existence of the impeller 2 in a liquid phase of the cryogenic liquefied gas and maintaining existence of the motor 1 in a gas phase of the cryogenic liquefied gas. Thus the submerging of the motor 1 in the liquid becomes unnecessary, whereby the precooling time can be reduced remarkably and the loss of cryogenic liquefied gas due to vaporization caused by the submerging can be reduced, and in addition, the motor 1 itself can be configured at a comparatively low cost.
摘要:
The non-aqueous electrolyte solution of the present invention is a non-aqueous electrolyte solution comprising acetonitrile and a lithium salt, wherein the anion of the lithium salt has a LUMO (lowest unoccupied molecular orbital) energy in the range of −2.00 to 4.35 eV, and a HOMO (highest occupied molecular orbital) energy in the range of −5.35 to −2.90 eV.
摘要:
A non-volatile storage element 100 has a silicon substrate 102, a first memory region 106a composed of a first lower silicon oxide film 108a, a first silicon nitride film 110a, and a first upper layer silicon oxide film 112a provided in this order, a second memory region 106b composed of a second lower layer silicon oxide film 108b, a second silicon nitride film 110b, and a second upper layer silicon oxide film 112b provided in this order, and a first control gate 114 and a second control gate 116 arranged on the first memory region 106a and the second control gate 116, respectively, on the silicon substrate 102. The silicon nitride film 110 is provided so as to be horizontal in a direction within a substrate plane.
摘要:
A polymeric electrolyte comprising: a polymeric material and an electrolyte salt; or a polymeric material, a solvent and an electrolyte salt, wherein a copolymer composed of 50 to 99 mol % of an ethylenically unsaturated compound and 1 to 50 mol % of carbon monoxide comprises 66.7 to 100 wt % of the polymeric material.
摘要:
A memory element structured so as to reduce the size and improve reliability such that a memory gate and control gate are adjacent to each other. The side of a memory gate 115 in contact with a control gate 126 is formed by etching back. This side has a circular arc-shaped curve and is convex towards the control gate 126. By doing this, a short circuit between the electrodes created by the occurrence of a thin film part in an HTO film 108 can be suppressed.
摘要:
A first insulating layer, a second insulating layer, a third insulating layer, a first conductive layer, and an oxidation inhibitor film are successively deposited on a surface of a semiconductor substrate. After the oxidation inhibitor film and the first conductive layer are processed into strips, the assembly is thermally oxidized using the oxidation inhibitor film and the first conductive layer as a mask, thus forming thermal oxide films on first and second diffused layers. Then, a second conductive film is formed over the thermal oxide films and the first conductive layer, and then processed into a desired shape thereby to form an interconnection layer.
摘要:
A memory element structured so as to reduce the size and improve reliability such that a memory gate and control gate are adjacent to each other. The side of a memory gate 115 in contact with a control gate 126 is formed by etching back. This side has a circular arc-shaped curve and is convex towards the control gate 126. By doing this, a short circuit between the electrodes created by the occurrence of a thin film part in an HTO film 108 can be suppressed.
摘要:
A crank shaft is constructed only at the surface layer of a journal portion with a hard nitride layer, so that the resultant crank shaft is available at a low cost, not so heavy and excellent in durability in comparison with a case employing a hard material for the whole crank shaft. Also, a method of manufacturing a crank shaft according to the present invention employs fluorinating process prior to nitriding process to change a passive coat layer, such as oxide layer on the surface of the journal portion to a fluoride layer, which protects the same surface. Therefore, even when there is space of time between formation of fluoride on the surface of the journal portion and nitriding process, the fluoride layer protects and keeps the surface of the journal portion in a favorable condition, resulting in that re-formation of oxide layer on that surface is prevented.
摘要:
A method for processing semiconductor materials such as a crystalline ingot or a wafer and an apparatus employed therein. An etching gas is supplied on the surface of a semiconductor material, while laser irradiation or light quantum irradiation is applied on a predetermined part of the semiconductor material surface, whereby a component of the etching gas is excited, reacted with a component of the semiconductor material and evaporated for elimination. Thereby, semiconductor materials can be processed hygienically, easily and with high precision.
摘要:
A flat casing is formed by joining a hollow cylindrical cover to a hollow cylindrical frame, and a d.c. magnetic field generating magnet in the form of a disk is fixed to the inner surface of the cover. Disposed inside the casing is a disklike diaphragm spaced apart from the lower surface of the magnet by a gap and having its outer peripheral portion fixedly held between the cover and the frame. A hollow cylindrical drive coil coaxial with the magnet is fixed to the lower surface of the diaphragm and has an axis perpendicular to the diaphragm. Stated specifically, the drive coil has an outside diameter which is at least 80% to not greater than 116% of the outside diameter of the magnet and an inside diameter which is at least 66% to not greater than 94% of the magnet outside diameter. The transducer is diminished in power consumption, has a reduced thickness and is yet highly efficient.