Cryogenic pump for liquefied gases
    51.
    发明授权
    Cryogenic pump for liquefied gases 有权
    低温液化气泵

    公开(公告)号:US09562533B2

    公开(公告)日:2017-02-07

    申请号:US13882259

    申请日:2011-09-14

    摘要: A cryogenic pump for liquefied gases is provided, which shortens precooling time, has a small loss of cryogenic liquefied gas, excels in pump efficiency, and is advantageous in cost. A motor 1 and an impeller 2 are coupled by a shaft 3 for transmitting a rotative drive force therebetween, and the motor 1 is arranged on an upper side and the impeller 2 is arranged on a lower side. The motor 1 and the impeller 2 exist in an enclosed space 14 where they are communicated with each other and into which the cryogenic liquefied gas is introduced. A heat adjusting unit 11 is provided between the motor 1 and the impeller 2, the heat adjusting unit maintaining existence of the impeller 2 in a liquid phase of the cryogenic liquefied gas and maintaining existence of the motor 1 in a gas phase of the cryogenic liquefied gas. Thus the submerging of the motor 1 in the liquid becomes unnecessary, whereby the precooling time can be reduced remarkably and the loss of cryogenic liquefied gas due to vaporization caused by the submerging can be reduced, and in addition, the motor 1 itself can be configured at a comparatively low cost.

    摘要翻译: 提供了一种用于液化气体的低温泵,其缩短预冷时间,低温液化气体的损失小,泵效率优异,成本有利。 马达1和叶轮2通过轴3联接,用于传递其间的旋转驱动力,马达1布置在上侧,叶轮2布置在下侧。 电动机1和叶轮2存在于封闭空间14中,它们彼此连通并且引入低温液化气体。 在马达1和叶轮2之间设置有热调节单元11,该热调节单元保持叶轮2在低温液化气体的液相中的存在,并且保持马达1在低温液化气相中的存在 加油站。 因此,电动机1在液体中的浸没变得不必要,从而可以显着降低预冷时间,并且可以减少由浸没引起的汽化引起的低温液化气体的损失,另外,也可以构成电动机1本身 成本相对较低。

    Non-volatile storage element and manufacturing method thereof
    53.
    发明授权
    Non-volatile storage element and manufacturing method thereof 失效
    非易失性存储元件及其制造方法

    公开(公告)号:US07705384B2

    公开(公告)日:2010-04-27

    申请号:US11392907

    申请日:2006-03-30

    申请人: Akira Yoshino

    发明人: Akira Yoshino

    IPC分类号: H01L29/423

    摘要: A non-volatile storage element 100 has a silicon substrate 102, a first memory region 106a composed of a first lower silicon oxide film 108a, a first silicon nitride film 110a, and a first upper layer silicon oxide film 112a provided in this order, a second memory region 106b composed of a second lower layer silicon oxide film 108b, a second silicon nitride film 110b, and a second upper layer silicon oxide film 112b provided in this order, and a first control gate 114 and a second control gate 116 arranged on the first memory region 106a and the second control gate 116, respectively, on the silicon substrate 102. The silicon nitride film 110 is provided so as to be horizontal in a direction within a substrate plane.

    摘要翻译: 非易失性存储元件100具有硅衬底102,由依次设置的第一下部氧化硅膜108a,第一氮化硅膜110a和第一上部氧化硅膜112a构成的第一存储区域106a, 由依次设置的第二下层氧化硅膜108b,第二氮化硅膜110b和第二上层氧化硅膜112b构成的第二存储区域106b,以及配置在第二存储区域106b上的第一控制栅极114和第二控制栅极116 第一存储区域106a和第二控制栅极116分别在硅衬底102上。氮化硅膜110被设置为在衬底平面内的方向上是水平的。

    Non-volatile memory element having memory gate and control gate adjacent to each other
    55.
    发明授权
    Non-volatile memory element having memory gate and control gate adjacent to each other 有权
    具有彼此相邻的存储器栅极和控制栅极的非易失性存储元件

    公开(公告)号:US07206226B2

    公开(公告)日:2007-04-17

    申请号:US11054389

    申请日:2005-02-10

    申请人: Akira Yoshino

    发明人: Akira Yoshino

    IPC分类号: G11C11/34

    摘要: A memory element structured so as to reduce the size and improve reliability such that a memory gate and control gate are adjacent to each other. The side of a memory gate 115 in contact with a control gate 126 is formed by etching back. This side has a circular arc-shaped curve and is convex towards the control gate 126. By doing this, a short circuit between the electrodes created by the occurrence of a thin film part in an HTO film 108 can be suppressed.

    摘要翻译: 存储元件被构造为减小尺寸并提高可靠性,使得存储器栅极和控制栅极彼此相邻。 与控制栅极126接触的存储栅极115的一侧通过蚀刻回形成。 该侧具有圆弧形曲线并且朝向控制门126凸出。 通过这样做,可以抑制由HTO膜108中的薄膜部分的发生而产生的电极之间的短路。

    Nonvolatile semiconductor memory device and method of manufacturing same

    公开(公告)号:US07105888B2

    公开(公告)日:2006-09-12

    申请号:US10396473

    申请日:2003-03-26

    申请人: Akira Yoshino

    发明人: Akira Yoshino

    IPC分类号: H01L29/76

    摘要: A first insulating layer, a second insulating layer, a third insulating layer, a first conductive layer, and an oxidation inhibitor film are successively deposited on a surface of a semiconductor substrate. After the oxidation inhibitor film and the first conductive layer are processed into strips, the assembly is thermally oxidized using the oxidation inhibitor film and the first conductive layer as a mask, thus forming thermal oxide films on first and second diffused layers. Then, a second conductive film is formed over the thermal oxide films and the first conductive layer, and then processed into a desired shape thereby to form an interconnection layer.

    Non-volatile memory element and process for manufacturing the same
    57.
    发明申请
    Non-volatile memory element and process for manufacturing the same 有权
    非易失性存储元件及其制造方法

    公开(公告)号:US20050180207A1

    公开(公告)日:2005-08-18

    申请号:US11054389

    申请日:2005-02-10

    申请人: Akira Yoshino

    发明人: Akira Yoshino

    摘要: A memory element structured so as to reduce the size and improve reliability such that a memory gate and control gate are adjacent to each other. The side of a memory gate 115 in contact with a control gate 126 is formed by etching back. This side has a circular arc-shaped curve and is convex towards the control gate 126. By doing this, a short circuit between the electrodes created by the occurrence of a thin film part in an HTO film 108 can be suppressed.

    摘要翻译: 存储元件被构造为减小尺寸并提高可靠性,使得存储器栅极和控制栅极彼此相邻。 与控制栅极126接触的存储栅极115的一侧通过蚀刻回形成。 该侧具有圆弧形曲线并且朝向控制门126凸出。 通过这样做,可以抑制由HTO膜108中的薄膜部分的发生而产生的电极之间的短路。

    Method of manufacturing a crank shaft
    58.
    发明授权
    Method of manufacturing a crank shaft 失效
    曲柄轴的制造方法

    公开(公告)号:US6020025A

    公开(公告)日:2000-02-01

    申请号:US424602

    申请日:1995-04-17

    申请人: Akira Yoshino

    发明人: Akira Yoshino

    IPC分类号: F16C3/06 B05D5/00 C21D1/06

    CPC分类号: F16C3/06 Y10S148/904

    摘要: A crank shaft is constructed only at the surface layer of a journal portion with a hard nitride layer, so that the resultant crank shaft is available at a low cost, not so heavy and excellent in durability in comparison with a case employing a hard material for the whole crank shaft. Also, a method of manufacturing a crank shaft according to the present invention employs fluorinating process prior to nitriding process to change a passive coat layer, such as oxide layer on the surface of the journal portion to a fluoride layer, which protects the same surface. Therefore, even when there is space of time between formation of fluoride on the surface of the journal portion and nitriding process, the fluoride layer protects and keeps the surface of the journal portion in a favorable condition, resulting in that re-formation of oxide layer on that surface is prevented.

    摘要翻译: 曲柄轴仅在具有硬质氮化物层的轴颈部分的表层处构造,使得所得到的曲柄轴可以以低成本获得,而不是很重,并且耐久性优异,与使用硬质材料的情况相比, 整个曲轴。 此外,根据本发明的曲轴的制造方法在氮化处理之前使用氟化处理,以将被动涂层如轴颈部分的表面上的氧化物层改变为保护相同表面的氟化物层。 因此,即使在轴颈部表面形成氟化物之间存在时间和氮化处理的情况下,氟化物层也能够保持并保持轴颈部的表面处于良好的状态,导致氧化物层的重新形成 在该表面被阻止。

    Method for processing semiconductor material
    59.
    发明授权
    Method for processing semiconductor material 失效
    半导体材料的处理方法

    公开(公告)号:US5912186A

    公开(公告)日:1999-06-15

    申请号:US755762

    申请日:1996-11-21

    IPC分类号: H01L21/3065 H01L21/302

    CPC分类号: H01L21/3065

    摘要: A method for processing semiconductor materials such as a crystalline ingot or a wafer and an apparatus employed therein. An etching gas is supplied on the surface of a semiconductor material, while laser irradiation or light quantum irradiation is applied on a predetermined part of the semiconductor material surface, whereby a component of the etching gas is excited, reacted with a component of the semiconductor material and evaporated for elimination. Thereby, semiconductor materials can be processed hygienically, easily and with high precision.

    摘要翻译: 一种用于处理半导体材料如晶锭或晶片的方法及其中使用的装置。 在半导体材料表面的预定部分上施加激光照射或光量子照射,在半导体材料的表面上提供蚀刻气体,由此激发蚀刻气体的成分,与半导体材料的成分反应 并蒸发除去。 因此,半导体材料可以卫生,容易和高精度地加工。

    Electroacoustic transducer
    60.
    发明授权
    Electroacoustic transducer 失效
    电声换能器

    公开(公告)号:US5764784A

    公开(公告)日:1998-06-09

    申请号:US525424

    申请日:1995-09-07

    IPC分类号: H04R9/00 H04R9/02 H04R25/00

    CPC分类号: H04R9/025 H04R9/00

    摘要: A flat casing is formed by joining a hollow cylindrical cover to a hollow cylindrical frame, and a d.c. magnetic field generating magnet in the form of a disk is fixed to the inner surface of the cover. Disposed inside the casing is a disklike diaphragm spaced apart from the lower surface of the magnet by a gap and having its outer peripheral portion fixedly held between the cover and the frame. A hollow cylindrical drive coil coaxial with the magnet is fixed to the lower surface of the diaphragm and has an axis perpendicular to the diaphragm. Stated specifically, the drive coil has an outside diameter which is at least 80% to not greater than 116% of the outside diameter of the magnet and an inside diameter which is at least 66% to not greater than 94% of the magnet outside diameter. The transducer is diminished in power consumption, has a reduced thickness and is yet highly efficient.

    摘要翻译: 通过将中空圆柱形盖连接到中空圆柱形框架上而形成扁平壳体,并且直径 磁盘形式的磁场产生磁体固定在盖的内表面上。 设置在壳体内部的是盘状隔膜,该隔膜通过间隙与磁体的下表面间隔开,并且其外周部分固定地保持在盖和框架之间。 与磁体同轴的中空圆柱形驱动线圈固定在隔膜的下表面,并且具有垂直于隔膜的轴线。 具体来说,驱动线圈的外径为磁铁外径的至少80%以上且不大于116%,内径为磁铁外径的至少66%以上且不大于94% 。 传感器在功耗方面减少,厚度减小,而且效率很高。