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公开(公告)号：US5041392A
公开(公告)日：1991-08-20
申请号：US544620
申请日：1990-06-27
申请人： Takao Kuroda , Toshihiro Kuriyama , Kenju Horii , Hiroyuki Mizuno
发明人： Takao Kuroda , Toshihiro Kuriyama , Kenju Horii , Hiroyuki Mizuno
IPC分类号： H01L27/148
CPC分类号： H01L27/14887 , H01L27/14831
摘要： In a solid state image sensing device of p-conductivity type well, photo-electro converting region (1) are configurated to have larger area as depth increases, so that excessive electric charges generated in the p-conductivity type well are easily transferred from expanded peripheral parts (7) at the bottom (1b) to channel (3), without being undesirably transferred downward through thin p-conductivity type region 6 to substrate (4), and smear electric charges which has been generated in a thin p-conductivity type well under the photo-electro converting region in the conventional device is suppressed, to effectively decrease the smear phenomenon.
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公开(公告)号：US4796133A
公开(公告)日：1989-01-03
申请号：US15423
申请日：1987-02-17
申请人： Toshihiro Kuriyama
发明人： Toshihiro Kuriyama
CPC分类号： G11B5/1878 , G11B5/105 , G11B5/232
摘要： A floating magnetic head of the composite type wherein a slider and a magnetic core are joined integrally together, is characterized in that a metallic magnetic thin film is interposed between the abutting surfaces of half cores of a pair made of oxide magnetic material and composing the magnetic core, a gap between the abutting surfaces of the paired half cores is made in the form of a wedge so that it becomes wider as coming closer to the interior, and the width of a magnetic gap is restricted by an end portion of the wedge-shaped gap on the side facing opposite a magnetic recording medium.
摘要翻译： 复合型的浮动磁头，其中滑块和磁芯一体地结合在一起，其特征在于，金属磁性薄膜插入在由氧化物磁性材料制成的一对半芯的邻接表面之间，并组成磁性 成对的半芯的抵接面之间的间隙形成为楔形，使得随着靠近内部而变宽，磁隙的宽度被楔形的芯部的端部限制， 在与磁记录介质相对的一侧的形状的间隙。
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公开(公告)号：US07723145B2
公开(公告)日：2010-05-25
申请号：US12274730
申请日：2008-11-20
申请人： Toshihiro Kuriyama
发明人： Toshihiro Kuriyama
IPC分类号： H01L21/00 , H01L21/339
CPC分类号： H01L27/1463 , H01L27/14636 , H01L27/14812
摘要： A solid-state imaging device includes a semiconductor substrate including: a plurality of light-receptive portions that are arranged one-dimensionally or two-dimensionally; a vertical transfer portion that transfers signal electric charge read out from the light-receptive portions in a vertical direction; a horizontal transfer portion that transfers the signal electric charge transferred by the vertical transfer portion in a horizontal direction; a barrier region adjacent to the horizontal transfer portion, the barrier region letting only surplus electric charge of the horizontal transfer portion pass therethough; a drain region adjacent to the barrier region, into which the surplus electric charge passing through the barrier region is discharged; and an insulation film adjacent to the drain region. A portion of the drain region is located beneath the insulation film.
摘要翻译： 一种固态成像装置，包括：半导体基板，包括：一维或二维布置的多个光接收部分; 垂直传送部分，其沿垂直方向传送从光接收部分读出的信号电荷; 水平传送部，其在垂直方向上传送由垂直传送部传送的信号电荷; 与水平转印部分相邻的势垒区域，仅允许水平转印部分的剩余电荷的势垒区域通过; 与阻挡区域相邻的漏极区域，通过阻挡区域的剩余电荷被排出到该漏极区域; 以及与漏区相邻的绝缘膜。 漏极区域的一部分位于绝缘膜下方。
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公开(公告)号：US07705375B2
公开(公告)日：2010-04-27
申请号：US11584488
申请日：2006-10-23
IPC分类号： H01L29/00
CPC分类号： H01L27/14812
摘要： A solid state imaging device includes: a plurality of photoelectric conversion portions formed in a substrate in a matrix arrangement to convert light incident on light receiving portions into electricity; a plurality of vertical transfer registers for reading charges out of the photoelectric conversion portions and transferring the charges in the column direction; and a plurality of shunt interconnections formed above the vertical transfer electrodes in one-to-one correspondence with the columns of the photoelectric conversion portions to supply drive pulses to the corresponding vertical transfer electrodes. Each of the vertical transfer registers includes a vertical transfer channel formed in the substrate in one-to-one correspondence with a column of the photoelectric conversion portions and a plurality of vertical transfer electrodes formed above the vertical transfer channel. Each of the shunt interconnections is configured to surround the light receiving portions and having windows that expose the light receiving portions.
摘要翻译： 一种固态成像装置，包括：多个光电转换部，其形成在基板上，矩阵状配置，将入射到受光部的光转换为电; 多个垂直传送寄存器，用于从光电转换部分读出电荷并在列方向上传送电荷; 以及多个分流互连，其形成在垂直传输电极上方，与光电转换部分的列一一对应，以向相应的垂直传输电极提供驱动脉冲。 每个垂直传送寄存器包括在基板中形成的垂直传输通道，其与光电转换部分的列一一对应，以及形成在垂直传送通道上方的多个垂直传输电极。 每个分流互连被配置为围绕光接收部分并且具有暴露光接收部分的窗口。
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公开(公告)号：US07470965B2
公开(公告)日：2008-12-30
申请号：US10893931
申请日：2004-07-20
申请人： Toshihiro Kuriyama
发明人： Toshihiro Kuriyama
IPC分类号： H01L31/10
CPC分类号： H01L27/14605 , H01L27/14621 , H01L27/14625 , H01L27/14685 , H01L27/14818 , H01L31/0232
摘要： In a solid-state imaging device of the present invention, light-sensitive elements 54, each of which includes a light receiving section capable of receiving light, are arranged in a matrix form at regular spacings in a photoreceiving region provided on a semiconductor substrate 51. A plurality of detecting electrodes 53 are provided on the semiconductor substrate 51 corresponding to the light-sensitive elements 54 for detecting an electrical charge generated by each light-sensitive element 54. A plurality of interconnections 57 coat the detecting electrodes 53, and apply a voltage thereto. A plurality of reflecting walls 62 are formed in a grid pattern over the interconnection 57 so as to partition the light-sensitive elements 54 individually for reflecting a portion of light entering the semiconductor substrate 51 from above onto the light receiving section of each light-sensitive element 54. The plurality of reflecting walls 62 are electrically insulated from the interconnections 57.
摘要翻译： 在本发明的固体摄像装置中，将具有能够接收光的受光部的光敏元件54以规定的间隔配置在设置在半导体基板51上的光接收区域中的矩阵状 多个检测电极53设置在对应于感光元件54的半导体衬底51上，用于检测由每个光敏元件54产生的电荷。多个互连57涂覆检测电极53， 电压。 多个反射壁62形成在互连线57上的网格图案中，以便分别对感光元件54进行分隔，以将来自半导体衬底51的光的一部分从上面反射到每个感光元件的光接收部分上 多个反射壁62与互连57电绝缘。
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公开(公告)号：US07452744B2
公开(公告)日：2008-11-18
申请号：US11302191
申请日：2005-12-14
申请人： Ken Henmi , Toshihiro Kuriyama
发明人： Ken Henmi , Toshihiro Kuriyama
IPC分类号： H01L21/00
CPC分类号： H01L27/14625 , H01L27/14683 , H01L27/14685 , H01L27/148
摘要： A first gate electrode and a second gate electrode are formed on a semiconductor substrate, and then a resist pattern is formed so as to selectively leave open a portion including an overlap between the first and second gate electrodes. Next, the overlap between the gate electrodes is removed through isotropic etching. Etching is carried out at this time by an amount within a range of 140% to 200% of the film thickness of the second gate electrode. Next, a normal inter-layer insulating film and light-shielding film are formed. It is possible to eliminate the overlap between the gate electrodes adjacent to an opening of the light-shielding film, suppress the height of the light-shielding film at that portion, reduce shading for the light condensed by a lens and thereby improve the light condensing efficiency of the lens.
摘要翻译： 在半导体衬底上形成第一栅电极和第二栅电极，然后形成抗蚀剂图案，以选择性地留下包括第一和第二栅电极之间重叠的部分。 接下来，通过各向同性蚀刻去除栅电极之间的重叠。 此时，在第二栅电极的膜厚的140〜200％的范围内进行蚀刻。 接下来，形成正常的层间绝缘膜和遮光膜。 可以消除与遮光膜的开口相邻的栅电极之间的重叠，抑制该部分的遮光膜的高度，减少由透镜聚光的光的阴影，从而提高聚光 透镜的效率。
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公开(公告)号：US20070182837A1
公开(公告)日：2007-08-09
申请号：US11584488
申请日：2006-10-23
CPC分类号： H01L27/14812
摘要： A solid state imaging device includes: a plurality of photoelectric conversion portions formed in a substrate in a matrix arrangement to convert light incident on light receiving portions into electricity; a plurality of vertical transfer registers for reading charges out of the photoelectric conversion portions and transferring the charges in the column direction; and a plurality of shunt interconnections formed above the vertical transfer electrodes in one-to-one correspondence with the columns of the photoelectric conversion portions to supply drive pulses to the corresponding vertical transfer electrodes. Each of the vertical transfer registers includes a vertical transfer channel formed in the substrate in one-to-one correspondence with a column of the photoelectric conversion portions and a plurality of vertical transfer electrodes formed above the vertical transfer channel. Each of the shunt interconnections is configured to surround the light receiving portions and having windows that expose the light receiving portions.
摘要翻译： 一种固态成像装置，包括：多个光电转换部，其形成在基板上，矩阵状配置，将入射到受光部的光转换为电; 多个垂直传送寄存器，用于从光电转换部分读出电荷并在列方向上传送电荷; 以及多个分流互连，其形成在垂直传输电极上方，与光电转换部分的列一一对应，以向相应的垂直传输电极提供驱动脉冲。 每个垂直传送寄存器包括在基板中形成的垂直传输通道，其与光电转换部分的列一一对应，以及形成在垂直传送通道上方的多个垂直传输电极。 每个分流互连被配置为围绕光接收部分并且具有暴露光接收部分的窗口。
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公开(公告)号：US20070170477A1
公开(公告)日：2007-07-26
申请号：US11582984
申请日：2006-10-19
IPC分类号： H01L31/113 , H01L21/00
CPC分类号： H01L27/1462 , H01L27/14623 , H01L27/1463 , H01L27/14685 , H01L27/14806
摘要： A plurality of light receiving elements are arranged in a matrix with uniform space therebetween in a light receiving region defined on a semiconductor substrate. A plurality of read-out electrodes are formed on the semiconductor substrate in an arrangement corresponding to the light receiving elements to read charges generated by the light receiving elements, a light shield film having openings positioned above the light receiving elements is formed to cover the read-out electrodes, first optical waveguides are formed in the openings above the light receiving elements and second optical waveguides are formed on the light shield film. The second optical waveguides are in the form of dots, stripes or a grid when viewed in plan.
摘要翻译： 多个光接收元件以限定在半导体衬底上的光接收区域中以均匀的间隔排列成矩阵。 多个读出电极以对应于光接收元件的布置形成在半导体衬底上，以读取由光接收元件产生的电荷，形成有位于光接收元件上方的开口的遮光膜覆盖读取 第一光波导形成在光接收元件上方的开口中，第二光波导形成在遮光膜上。 当在平面图中观察时，第二光波导是点，条纹或格栅的形式。
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公开(公告)号：US20060170018A1
公开(公告)日：2006-08-03
申请号：US11333924
申请日：2006-01-18
申请人： Toshihiro Kuriyama
发明人： Toshihiro Kuriyama
IPC分类号： H01L31/113 , H01L21/00
CPC分类号： H01L27/1463 , H01L27/14636 , H01L27/14812
摘要： A solid-state imaging device includes a semiconductor substrate including: a plurality of light-receptive portions that are arranged one-dimensionally or two-dimensionally; a vertical transfer portion that transfers signal electric charge read out from the light-receptive portions in a vertical direction; a horizontal transfer portion that transfers the signal electric charge transferred by the vertical transfer portion in a horizontal direction; a barrier region adjacent to the horizontal transfer portion, the barrier region letting only surplus electric charge of the horizontal transfer portion pass therethough; a drain region adjacent to the barrier region, into which the surplus electric charge passing through the barrier region is discharged; and an insulation film adjacent to the drain region. A portion of the drain region is located beneath the insulation film.
摘要翻译： 一种固态成像装置，包括：半导体基板，包括：一维或二维布置的多个光接收部分; 垂直传送部分，其沿垂直方向传送从光接收部分读出的信号电荷; 水平传送部，其在垂直方向上传送由垂直传送部传送的信号电荷; 与水平转印部分相邻的势垒区域，仅允许水平转印部分的剩余电荷的势垒区域通过; 与阻挡区域相邻的漏极区域，通过阻挡区域的剩余电荷被排出到该漏极区域; 以及与漏区相邻的绝缘膜。 漏极区域的一部分位于绝缘膜下方。
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公开(公告)号：US20060060896A1
公开(公告)日：2006-03-23
申请号：US11272817
申请日：2005-11-15
申请人： Toshihiro Kuriyama
发明人： Toshihiro Kuriyama
IPC分类号： H01L31/113 , H01L21/00
CPC分类号： H01L27/14629 , H01L27/14605 , H01L27/14621 , H01L27/14625 , H01L27/1463 , H01L27/14685 , H01L27/14818 , H01L31/02164 , H01L31/02325
摘要： The solid-state imaging device according to the present invention comprises: a plurality of light-sensitive elements 1 arranged in a matrix form at regular spacings in a photoreceiving region provided on a semiconductor substrate; a plurality of detecting electrodes provided on the semiconductor substrate corresponding to the plurality of the light-sensitive elements for detecting an electrical charge generated by each light-sensitive element; a light-shielding film 58 coating the plurality of detecting electrodes and having an aperture 65 over each light-sensitive element; and a plurality of reflecting walls 62, which are formed in a grid pattern over the light-shielding film so as to partition the apertures individually over the respective light-sensitive elements, for reflecting a portion of light entering the semiconductor substrate from above onto the aperture on each light-sensitive element. The plurality of reflecting walls are formed so that a middle point of the reflecting walls opposing each other across the aperture is displaced from a center of the aperture toward a center of the photoreceiving region.
摘要翻译： 根据本发明的固态成像装置包括：多个光敏元件1，其设置在半导体衬底上的光接收区域中以规则间隔排列成矩阵形式; 多个检测电极，设置在与多个感光元件对应的半导体衬底上，用于检测由每个光敏元件产生的电荷; 覆盖多个检测电极的遮光膜58，并且在每个感光元件上具有孔65; 以及多个反射壁62，它们以遮光膜的方式形成为格栅图案，以分隔开各个感光元件上的孔，用于将从上方进入半导体衬底的光的一部分反射到 光敏元件上的光圈。 多个反射壁形成为使得穿过孔径相对的反射壁的中点从孔的中心朝向光接收区域的中心偏移。
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