公开(公告)号：US20080293285A1

公开(公告)日：2008-11-27

申请号：US12154302

申请日：2008-05-22

申请人： Wen-Yi Hsieh

发明人： Wen-Yi Hsieh

IPC分类号： H01R13/62 ,  H01R12/00

CPC分类号： G01R1/0466 ,  G01R31/2863

摘要： An burn-in socket used for connecting an IC package includes an base, a actuated device floatably assembled on said base, a frame retained on said base, a plurality of contacts received in said base and a switch member rotatable assembled on said base. Said actuated device includes a plurality of sustaining shafts with a plurality of rollers ringed thereon. Said switch member includes a plurality of rotating shafts retained on said base and a plurality of latching members engaged with said rotating shafts and rotating between an open position and a locking position. Said rollers of sustaining shafts moveable engaged with said latching member, which lowers the abrasion while the latching members are rotating between said open position and said locking position around said rotating shafts.

摘要翻译： 用于连接IC封装的老化插座包括基座，可浮动地组装在所述基座上的致动装置，保持在所述基座上的框架，容纳在所述基座中的多个触点和可转动地组装在所述基座上的开关构件。 所述致动装置包括多个保持轴，多个辊环在其上。 所述开关构件包括保持在所述基座上的多个旋转轴和与所述旋转轴接合并在打开位置和锁定位置之间旋转的多个闩锁构件。 所述保持轴的所述辊可与所述闩锁构件可移动地接合，这降低了磨损，同时锁定构件在围绕所述旋转轴的所述打开位置和所述锁定位置之间旋转。

公开(公告)号：US20080280477A1

公开(公告)日：2008-11-13

申请号：US12151543

申请日：2008-05-07

申请人： Shih-Wei Hsiao ,  Sung-Pei Hou ,  Wen-Yi Hsieh

发明人： Shih-Wei Hsiao ,  Sung-Pei Hou ,  Wen-Yi Hsieh

IPC分类号： H01R13/62

CPC分类号： H05K7/1053

摘要： An IC socket includes a socket body with a plurality of contacts disposed therein, a cover rotatablely coupled to the socket body and at least one slider in the socket body. The socket body defines a receiving space for receiving an IC package, and the cover has a driving member. The slider has one end engageable with the driving member and the other end extending toward the receiving space. When the IC socket is in a close position, the slider touches the IC package or close to the IC package to keep a reliable connection between the IC socket and the IC package.

摘要翻译： IC插座包括插座主体，其中设置有多个触点，盖可旋转地联接到插座主体和插座主体中的至少一个滑块。 插座主体限定用于接收IC封装的接收空间，并且盖具有驱动构件。 滑块具有可与驱动构件接合的一端，而另一端向接收空间延伸。 当IC插座处于关闭位置时，滑块接触IC封装或靠近IC封装，以保持IC插座和IC封装之间的可靠连接。

公开(公告)号：US20060109710A1

公开(公告)日：2006-05-25

申请号：US11273120

申请日：2005-11-14

申请人： Wen-Yi Hsieh ,  Nai-Ping Kuo ,  Chun-Hsiung Hung ,  Ken-Hui Chen

发明人： Wen-Yi Hsieh ,  Nai-Ping Kuo ,  Chun-Hsiung Hung ,  Ken-Hui Chen

IPC分类号： G11C16/06

CPC分类号： G11C16/0475 ,  G11C16/28 ,  G11C16/3454 ,  G11C16/3459

摘要： A program verification method for a memory device having a virtual array including a plurality of memory cells determines if leakage current passes through one or more neighboring memory cells to the programmed memory cell. The programmed memory cell is verified based on a first threshold state if leakage current is determined to pass through one or more neighboring memory cells. The programmed memory cell is verified based on a second threshold state if the leakage current is not determined to pass through one or more neighboring memory cells.

摘要翻译： 具有包括多个存储单元的虚拟阵列的存储器件的程序验证方法确定漏电流是否通过一个或多个相邻的存储器单元到编程的存储器单元。 如果确定泄漏电流通过一个或多个相邻存储器单元，则基于第一阈值状态来验证编程存储器单元。 如果泄漏电流未被确定通过一个或多个相邻存储器单元，则基于第二阈值状态来验证编程存储器单元。

公开(公告)号：US06277721B1

公开(公告)日：2001-08-21

申请号：US09467005

申请日：1999-12-20

申请人： Tung-Po Chen ,  Hong-Tsz Pan ,  Wen-Yi Hsieh

发明人： Tung-Po Chen ,  Hong-Tsz Pan ,  Wen-Yi Hsieh

IPC分类号： H01L213205

CPC分类号： H01L29/665 ,  H01L21/28052 ,  H01L21/28518

摘要： A method of making a semiconductor device including a MOS transistor provides an insulator formed on a semiconductor substrate and a gate electrode formed on the insulator. Source/drain regions are formed within the substrate on either side of the gate electrode. A layer of titanium is sputtered onto the semiconductor device, and a layer of titanium nitride is direct sputtered over the titanium layer using a titanium nitride target. The device is annealed at a first temperature to form a structure including titanium silicide on the polysilicon electrode, titanium silicide on the surface of the source/drain regions, unreacted titanium over the silicide regions, and titanium nitride over the unreacted metal The unreacted titanium and titanium nitride are removed from the structure, and the structure is annealed at a higher temperature than the first temperature to form a lower resistivity titanium silicide.

摘要翻译： 制造包括MOS晶体管的半导体器件的方法提供形成在半导体衬底上的绝缘体和形成在绝缘体上的栅电极。 源极/漏极区域形成在栅电极两侧的衬底内。 将钛层溅射到半导体器件上，并且使用氮化钛靶将一层氮化钛直接溅射在钛层上。 器件在第一温度下退火以在多晶硅电极上形成包括硅化钛的结构，源极/漏极区域的表面上的硅化钛，硅化物区域上的未反应的钛以及未反应的金属上的氮化钛。未反应的钛和 从结构中除去氮化钛，并且该结构在比第一温度更高的温度下退火以形成较低电阻率的硅化钛。

公开(公告)号：US06255177B1

公开(公告)日：2001-07-03

申请号：US09568321

申请日：2000-05-09

申请人： Edberg Fang ,  Wen-Yi Hsieh

发明人： Edberg Fang ,  Wen-Yi Hsieh

IPC分类号： H01L21336

CPC分类号： H01L21/28052 ,  H01L29/66545

摘要： A fabrication method for a salicide gate is described, wherein the method comprising forming a gate structure on a substrate. The gate structure comprises a polysilicon gate and a selective-deposition dummy layer formed on the polysilicon gate. Source/drain regions are then formed on both sides of the gate structure in the substrate. After this, a dielectric layer is selectively deposited on the substrate, wherein the dielectric layer on the source/drain regions is thicker than the dielectric layer on the anti-reflection layer. A portion of the dielectric layer is removed until the anti-reflection layer is exposed. The anti-reflection layer is subsequently removed, followed by forming a salicide layer on the polysilicon gate to complete the manufacturing of a salicide gate.

摘要翻译： 描述了一种用于硅化物栅极的制造方法，其中所述方法包括在衬底上形成栅极结构。 栅极结构包括形成在多晶硅栅极上的多晶硅栅极和选择性沉积虚设层。 然后在衬底中的栅极结构的两侧上形成源/漏区。 此后，介电层被选择性地沉积在衬底上，其中源极/漏极区上的电介质层比抗反射层上的电介质层厚。 去除介电层的一部分直到抗反射层被暴露。 随后去除抗反射层，随后在多晶硅栅极上形成自对准硅化物层，以完成自对准硅栅的制造。

公开(公告)号：US06251711B1

公开(公告)日：2001-06-26

申请号：US09531108

申请日：2000-03-17

申请人： Edberg Fang ,  Wen-Yi Hsieh ,  Teng-Chun Tsai

发明人： Edberg Fang ,  Wen-Yi Hsieh ,  Teng-Chun Tsai

IPC分类号： H01L21335

CPC分类号： H01L29/66583 ,  H01L21/28052 ,  H01L21/28518

摘要： The proposed invention is a salicide process that is used to avoid bridge phenomena. In short, the proposed method for forming silicide without bridge phenomena comprises following steps: providing a substrate with a pad layer on the substrate; forming a first cap layer on the pad layer; defining a trench region; removing part of both the pad layer and the first cap layer that are located inside the trench region such that a trench is formed; filling the trench by a gate oxide layer and a polysilicon layer in sequence; capping a first metal layer on the polysilicon layer; performing a first rapid thermal process to form a first silicide layer over the gate oxide layer; removing excess the first metal layer; forming a second cap layer on the first silicide layer; planarizing surface of both the first cap layer and the second cap layer; removing the first cap layer; removing part of the pad layer that is not covered by the gate oxide layer and then a gate structure being formed; forming two light doped drain in the substrate; forming a spacer on sidewall of the gate structure; forming a sources and a drain in the substrate, herein the source and the drain is located around the light doped drains; forming some second metal layers on both the source and the drain; performing a second thermal process to form two second silicide layer over the source and the drain; removing excess the second metal layer; and then forming a third rapid thermal process.

摘要翻译： 所提出的发明是用于避免桥梁现象的自杀过程。 简而言之，所提出的无桥现象形成硅化物的方法包括以下步骤：在衬底上提供衬垫层; 在所述垫层上形成第一盖层; 限定沟槽区域; 去除位于沟槽区域内部的衬垫层和第一覆盖层的部分，使得形成沟槽; 按栅极氧化层和多晶硅层依次填充沟槽; 在多晶硅层上覆盖第一金属层; 执行第一快速热处理以在所述栅极氧化物层上形成第一硅化物层; 去除多余的第一金属层; 在所述第一硅化物层上形成第二盖层; 平坦化第一盖层和第二盖层的表面; 移除所述第一盖层; 去除未被栅极氧化物层覆盖的焊盘层的一部分，然后形成栅极结构; 在衬底中形成两个光掺杂漏极; 在栅极结构的侧壁上形成间隔物; 在衬底中形成源极和漏极，源极和漏极位于光掺杂漏极周围; 在源极和漏极上形成一些第二金属层; 执行第二热处理以在源极和漏极上形成两个第二硅化物层; 去除多余的第二金属层; 然后形成第三快速热处理。

公开(公告)号：US06249138B1

公开(公告)日：2001-06-19

申请号：US09447846

申请日：1999-11-23

申请人： Michael WC Huang ,  Gwo-Shii Yang ,  Hsiao-Ling Lu ,  Wen-Yi Hsieh

发明人： Michael WC Huang ,  Gwo-Shii Yang ,  Hsiao-Ling Lu ,  Wen-Yi Hsieh

IPC分类号： G01R3126

CPC分类号： G01R31/2648

摘要： A method of testing a leakage current caused by a self-aligned silicide process is described. The invention uses different test structure to monitor degree of and reason for a leakage current caused by a self-aligned silicide process. While monitoring a self-aligned silicide process performed on a metal-oxide semiconductor transistor without a LDD region, in addition to considering a leakage current occurring from the metal silicide layer to the junction and occurring at edge of the metal silicide layer, the invention further considers a leakage current at comer of the metal silicide layer. For a metal-oxide semiconductor transistor having a LDD region, the invention further considers a leakage current from the metal silicide layer to the LDD region. The invention monitors a leakage current at comer of the metal silicide layer.

摘要翻译： 描述了由自对准硅化物工艺引起的漏电流的测试方法。 本发明使用不同的测试结构来监测由自对准硅化物工艺引起的漏电流的程度和原因。 在监视对没有LDD区域的金属氧化物半导体晶体管进行的自对准硅化物处理的同时，除了考虑从金属硅化物层发生到结以及在金属硅化物层的边缘处发生的漏电流之外，本发明进一步 考虑在金属硅化物层的角落处的漏电流。 对于具有LDD区域的金属氧化物半导体晶体管，本发明还考虑了从金属硅化物层到LDD区域的漏电流。 本发明监测金属硅化物层的角落处的漏电流。

公开(公告)号：US6048788A

公开(公告)日：2000-04-11

申请号：US9333

申请日：1998-01-20

申请人： Hung-Yi Huang ,  Wen-Yi Hsieh ,  Chi-Rong Lin ,  Jenn-Tarng Lin

发明人： Hung-Yi Huang ,  Wen-Yi Hsieh ,  Chi-Rong Lin ,  Jenn-Tarng Lin

IPC分类号： H01L21/768 ,  H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/76862 ,  H01L21/76843 ,  H01L21/76856

摘要： A method of forming a metal plug. A contact window is formed to penetrate through a dielectric layer on a substrate having a MOS formed thereon. A titanium glue layer is formed on the dielectric layer and the circumference of the contact window. A titanium barrier layer is formed on the titanium nitride layer. Using nitrogen plasma bombardment on the titanium nitride layer, the structure of the titanium nitride layer is transformed. The number of the nucleation seeds is increased, and the size of grains is reduced. A metal layer is formed on the titanium nitride layer and fills the contact window. A part of the metal layer is removed and a metal plug within the contact window is formed.

摘要翻译： 一种形成金属塞的方法。 形成接触窗口，以穿透其上形成有MOS的基板上的电介质层。 在介电层和接触窗的圆周上形成钛胶层。 在氮化钛层上形成钛阻挡层。 在氮化钛层上使用氮等离子体轰击，转变了氮化钛层的结构。 成核种子的数量增加，晶粒尺寸减小。 在氮化钛层上形成金属层，并填充接触窗。 去除金属层的一部分并形成接触窗内的金属塞。

公开(公告)号：US08437586B2

公开(公告)日：2013-05-07

申请号：US13015232

申请日：2011-01-27

申请人： Wen-Yi Hsieh

发明人： Wen-Yi Hsieh

IPC分类号： G02B6/12

CPC分类号： G02B6/4439 ,  G02B6/3817 ,  G02B6/4293

摘要： A photoelectric connection assembly includes a circuit board defining conductive pads on a first surface thereof and waveguides embedded therein, an electrical connector assembled to the circuit board and a light transmission module. The electrical connector includes a seat defining a first receiving cavity for receiving the conversion module and a second receiving cavity below the first receiving cavity, a cover rotatably associated with a rear end of the seat and rotating to shield the first receiving cavity and conductive terminals loaded on the seat. The terminals include contacting portions extending in the first receiving cavity for electrical connection with the conversion module and leg portions connecting with the conductive pads. The light transmission module is received in the second receiving cavity and includes conversion module.

摘要翻译： 光电连接组件包括在其第一表面上限定导电焊盘并嵌入其中的波导的电路板，组装到电路板的电连接器和光传输模块。 电连接器包括限定用于接收转换模块的第一容纳腔和位于第一容纳腔下方的第二容纳空腔的座，与座的后端可旋转地相连并旋转以屏蔽第一容纳空腔的盖， 在座位上 端子包括在第一容纳腔中延伸的接触部分，用于与转换模块电连接，以及与导电垫连接的腿部。 光传输模块被接收在第二接收腔中并且包括转换模块。

公开(公告)号：US07972184B2

公开(公告)日：2011-07-05

申请号：US12549408

申请日：2009-08-28

申请人： Wen-Yi Hsieh ,  Ke-Hao Chen

发明人： Wen-Yi Hsieh ,  Ke-Hao Chen

IPC分类号： H01R13/241

CPC分类号： H01R13/2421 ,  H01R12/714

摘要： A contact for a burn-in socket electrically connecting an IC package and a printed circuit board, comprises a first contact, a second contact and a spring disposed between the first contact and the second contact. The first contact and the second contacts have a same configuration, and each contact has a U-shaped actuating portion with two legs and a conductive portion extending from one of the legs. The first contact and the second contact are orthogonally assembled together, and the first actuating portion bestrides the second actuating portion to clasp with second actuating portion, so that the conductive portions have an offset therebetween.

摘要翻译： 用于电连接IC封装和印刷电路板的老化插座的触点包括第一触点，第二触点和布置在第一触点和第二触点之间的弹簧。 第一触点和第二触点具有相同的构造，并且每个触点具有带有两个支腿的U形致动部分和从腿之一延伸的导电部分。 第一接触件和第二接触件正交组装在一起，并且第一致动部分优先于第二致动部分以与第二致动部分扣紧，使得导电部分之间具有偏移。