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    Non-volatile perpendicular magnetic memory with low switching current and high thermal stability
    51.
    发明授权
    Non-volatile perpendicular magnetic memory with low switching current and high thermal stability 有权
    具有低开关电流和高热稳定性的非易失性垂直磁存储器

    公开(公告)号：US08493777B2

    公开(公告)日：2013-07-23

    申请号：US13453940

    申请日：2012-04-23

    Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod

    Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod

    IPC: G11C11/14

    CPC classification number: H01L43/10 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228

    Abstract: A non-volatile current-switching magnetic memory element includes a bottom electrode, a pinning layer formed on top of the bottom electrode, and a fixed layer formed on top of the pinning layer. The non-volatile current-switching magnetic memory element further includes a tunnel layer formed on top of the pinning layer, a first free layer with a perpendicular anisotropy that is formed on top of the tunnel layer, a granular film layer formed on top of the free layer, a second free layer formed on top of the granular film layer, a cap layer formed on top of the second layer, and a top electrode formed on top of the cap layer.

    Abstract translation: 非易失性电流切换磁存储元件包括底电极，形成在底电极顶部的钉扎层和形成在钉扎层顶部上的固定层。 非易失性电流切换磁存储元件还包括形成在钉扎层顶部的隧道层，形成在隧道层顶部上的具有垂直各向异性的第一自由层，形成在隧道层顶部的粒状膜层 自由层，形成在所述粒状膜层的顶部上的第二自由层，形成在所述第二层的顶部上的盖层，以及形成在所述盖层的顶部上的顶部电极。

    Low cost multi-state magnetic memory
    52.
    发明授权
    Low cost multi-state magnetic memory 有权
    低成本多状态磁存储器

    公开(公告)号：US08456897B2

    公开(公告)日：2013-06-04

    申请号：US13216997

    申请日：2011-08-24

    Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

    Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

    IPC: G11C11/00

    CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/5607

    Abstract: A multi-state current-switching magnetic memory element has a magnetic tunneling junction (MTJ), for storing more than one bit of information. The MTJ includes a fixed layer, a barrier layer, and a non-uniform free layer. In one embodiment, having 2 bits per cell, when one of four different levels of current is applied to the memory element, the applied current causes the non-uniform free layer of the MTJ to switch to one of four different magnetic states. The broad switching current distribution of the MTJ is a result of the broad grain size distribution of the non-uniform free layer.

    Abstract translation: 多状态电流切换磁存储元件具有磁隧道结（MTJ），用于存储多于一位的信息。 MTJ包括固定层，阻挡层和不均匀的自由层。 在一个实施例中，当每个单元具有2位时，当四个不同电平的电流之一被施加到存储元件时，所施加的电流使MTJ的非均匀自由层切换到四个不同的磁状态之一。 MTJ的宽开关电流分布是非均匀自由层的宽晶粒尺寸分布的结果。

    Non-volatile magnetic memory with low switching current and high thermal stability
    54.
    发明授权
    Non-volatile magnetic memory with low switching current and high thermal stability 有权
    具有低开关电流和高热稳定性的非易失性磁存储器

    公开(公告)号：US08405174B2

    公开(公告)日：2013-03-26

    申请号：US13453928

    申请日：2012-04-23

    Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod

    Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod

    IPC: H01L29/82 ,  G11C11/00

    CPC classification number: H01L43/10 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228

    Abstract: A non-volatile current-switching magnetic memory element includes a bottom electrode, a pinning layer formed on top of the bottom electrode, and a fixed layer formed on top of the pinning layer. The memory element further includes a tunnel layer formed on top of the pinning layer, a first free layer formed on top of the tunnel layer, a granular film layer formed on top of the free layer, a second free layer formed on top of the granular film layer, a cap layer formed on top of the second layer and a top electrode formed on top of the cap layer.

    Abstract translation: 非易失性电流切换磁存储元件包括底电极，形成在底电极顶部的钉扎层和形成在钉扎层顶部上的固定层。 存储元件还包括形成在钉扎层顶部的隧道层，形成在隧道层顶部上的第一自由层，形成在自由层顶部上的颗粒膜层，形成在颗粒状的顶部上的第二自由层 膜层，形成在第二层的顶部上的盖层和形成在盖层的顶部上的顶部电极。

    MAGNETIC TUNNEL JUNCTION (MTJ) FORMATION USING MULTIPLE ETCHING PROCESSES
    55.
    发明申请
    MAGNETIC TUNNEL JUNCTION (MTJ) FORMATION USING MULTIPLE ETCHING PROCESSES 有权
    使用多个蚀刻过程的磁铁隧道结（MTJ）形成

    公开(公告)号：US20120282711A1

    公开(公告)日：2012-11-08

    申请号：US13371380

    申请日：2012-02-10

    Applicant: Ebrahim Abedifard ,  Parviz Keshtbod

    Inventor： Ebrahim Abedifard ,  Parviz Keshtbod

    IPC: H01L21/02

    CPC classification number: H01L43/12

    Abstract: A method of manufacturing a magnetic memory element includes the steps of forming a permanent magnetic layer on top a bottom electrode, forming a pinning layer on top the permanent magnetic layer, forming a magnetic tunnel junction (MTJ) including a barrier layer on top of the pinning layer, forming a top electrode on top of the MTJ, forming a hard mask on top of the top electrode, and using the hard mask to perform a series of etching processes to reduce the width of the MTJ and the top electrode to substantially a desired width, where one of these etching processes is stopped when a predetermined material in the pinning layer is detected thereby avoiding deposition of metal onto the barrier layer of the etching process thereby preventing shorting.

    Abstract translation: 一种制造磁存储元件的方法包括以下步骤：在底部电极的顶部形成永久磁性层，在永久磁性层的顶部形成钉扎层，形成包含阻挡层的磁性隧道结（MTJ） 钉扎层，在MTJ的顶部形成顶部电极，在顶部电极的顶部上形成硬掩模，并且使用硬掩模执行一系列蚀刻工艺以将MTJ和顶部电极的宽度减小到基本上 当检测到钉扎层中的预定材料时，这些蚀刻工艺中的一个停止，从而避免金属沉积到蚀刻工艺的阻挡层上，从而防止短路。

    Non-Volatile Magnetic Memory with Low Switching Current and High Thermal Stability
    56.
    发明申请
    Non-Volatile Magnetic Memory with Low Switching Current and High Thermal Stability 有权
    具有低开关电流和高热稳定性的非易失性磁存储器

    公开(公告)号：US20120205761A1

    公开(公告)日：2012-08-16

    申请号：US13453928

    申请日：2012-04-23

    Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod

    Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod

    IPC: H01L29/82

    CPC classification number: H01L43/10 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228

    Abstract: A non-volatile current-switching magnetic memory element includes a bottom electrode, a pinning layer formed on top of the bottom electrode, and a fixed layer formed on top of the pinning layer. The memory element further includes a tunnel layer formed on top of the pinning layer, a first free layer formed on top of the tunnel layer, a granular film layer formed on top of the free layer, a second free layer formed on top of the granular film layer, a cap layer formed on top of the second layer and a top electrode formed on top of the cap layer.

    Abstract translation: 非易失性电流切换磁存储元件包括底电极，形成在底电极顶部的钉扎层和形成在钉扎层顶部上的固定层。 存储元件还包括形成在钉扎层顶部的隧道层，形成在隧道层顶部上的第一自由层，形成在自由层顶部上的颗粒膜层，形成在颗粒状的顶部上的第二自由层 膜层，形成在第二层的顶部上的盖层和形成在盖层的顶部上的顶部电极。

    LOW CURRENT SWITCHING MAGNETIC TUNNEL JUNCTION DESIGN FOR MAGNETIC MEMORY USING DOMAIN WALL MOTION
    58.
    发明申请
    LOW CURRENT SWITCHING MAGNETIC TUNNEL JUNCTION DESIGN FOR MAGNETIC MEMORY USING DOMAIN WALL MOTION 有权
    使用域墙运动的磁流记忆的低电流开关磁通连接设计

    公开(公告)号：US20090109739A1

    公开(公告)日：2009-04-30

    申请号：US12255624

    申请日：2008-10-21

    Applicant: Rajiv Yadav RANJAN ,  Roger Klaus Malmhall ,  Parviz Keshtbod

    Inventor： Rajiv Yadav RANJAN ,  Roger Klaus Malmhall ,  Parviz Keshtbod

    IPC: G11C11/02

    CPC classification number: H01L27/222 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  G11C19/0808 ,  H01L43/08

    Abstract: A multi-state low-current-switching magnetic memory element (magnetic memory element) comprising a free layer, two stacks, and a magnetic tunneling junction is disclosed. The stacks and magnetic tunneling junction are disposed upon surfaces of the free layer, with the magnetic tunneling junction located between the stacks. The stacks pin magnetic domains within the free layer, creating a free layer domain wall. A current passed from stack to stack pushes the domain wall, repositioning the domain wall within the free layer. The position of the domain wall relative to the magnetic tunnel junction corresponds to a unique resistance value, and passing current from a stack to the magnetic tunnel junction reads the magnetic memory element's resistance. Thus, unique memory states may be achieved by moving the domain wall.

    Abstract translation: 公开了一种包括自由层，两个堆叠和磁性隧道结的多状态低电流切换磁存储元件（磁存储元件）。 堆叠和磁性隧道结设置在自由层的表面上，磁性隧道结位于堆叠之间。 堆叠在自由层内引导磁畴，产生自由层畴壁。 从堆栈传递到堆栈的电流推动域壁，重新定位自由层内的域壁。 畴壁相对于磁性隧道结的位置对应于唯一的电阻值，并且将电流从堆叠传递到磁性隧道结读取磁存储元件的电阻。 因此，可以通过移动域壁来实现唯一的记忆状态。

    Non-Volatile Magnetic Memory with Low Switching Current and High Thermal Stability
    59.
    发明申请
    Non-Volatile Magnetic Memory with Low Switching Current and High Thermal Stability 有权
    具有低开关电流和高热稳定性的非易失性磁存储器

    公开(公告)号：US20080191251A1

    公开(公告)日：2008-08-14

    申请号：US11739648

    申请日：2007-04-24

    Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod

    Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod

    IPC: G11C11/22 ,  H01L43/12

    CPC classification number: H01L43/10 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/228

    Abstract: One embodiment of the present invention includes a an embodiment of the present invention includes a non-volatile current-switching magnetic memory element including a bottom electrode; a pinning layer formed on top of the bottom electrode; a fixed layer formed on top of the pinning layer; a tunnel layer formed on top of the pinning layer; a first free layer formed on top of the tunnel layer; a granular film layer formed on top of the free layer; a second free layer formed on top of the granular film layer; a cap layer formed on top of the second layer; and a top electrode formed on top of the cap layer.

    Abstract translation: 本发明的一个实施例包括本发明的一个实施例，其包括一个包括底部电极的非易失性电流切换磁存储元件; 形成在底部电极顶部的钉扎层; 形成在钉扎层顶部的固定层; 形成在钉扎层之上的隧道层; 形成在隧道层顶部的第一自由层; 形成在自由层顶部的粒状膜层; 形成在所述粒状膜层顶部的第二自由层; 盖层，形成在第二层的顶部; 以及形成在盖层顶部上的顶部电极。

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