MTJ sensor including domain stable free layer
    51.
    发明授权
    MTJ sensor including domain stable free layer 有权
    MTJ传感器包括域稳定自由层

    公开(公告)号:US08089265B2

    公开(公告)日:2012-01-03

    申请号:US12321772

    申请日:2009-01-26

    IPC分类号: G01R15/18 G01R33/02

    摘要: By subdividing the free layer of a GMR/TMR device into multiple sub-elements that share common top and bottom electrodes, a magnetic detector is produced that is domain stable in the presence of large stray fields, thereby eliminating the need for longitudinal bias magnets. Said detector may be used to measure electric currents without being affected by local temperature fluctuations and/or stray fields.

    摘要翻译: 通过将GMR / TMR器件的自由层细分成共享共同的顶部和底部电极的多个子元件,产生在大的杂散场存在下稳定的磁性检测器,从而不需要纵向偏置磁体。 所述检测器可用于测量电流而不受局部温度波动和/或杂散场的影响。

    Power control of TAMR element during read/write transition

    公开(公告)号:US20110292773A1

    公开(公告)日:2011-12-01

    申请号:US13136462

    申请日:2011-08-01

    IPC分类号: G11B11/00

    摘要: A slider mounted TAMR (Thermal Assisted Magnetic Recording), DFH (Dynamic Flying Height) type read/write head using optical-laser generated surface plasmons in a small antenna to locally heat a magnetic medium, uses the same optical laser at low power to pre-heat the antenna. Maintaining the antenna at this pre-heated temperature, approximately 50% of its highest temperature during write operations, allows the DFH mechanism sufficient time to compensate for the thermal protrusion of the antenna at that lower temperature, so that thermal protrusion transients are significantly reduced when a writing operation occurs and full laser power is applied. The time constant for antenna protrusion is less than the time constant for DFH fly height compensation, so, without pre-heating, the thermal protrusion of the antenna due to absorption of optical radiation cannot be compensated by the DFH effect.

    Method and apparatus for providing an additional ground pad and electrical connection for grounding a magnetic recording head
    53.
    发明授权
    Method and apparatus for providing an additional ground pad and electrical connection for grounding a magnetic recording head 有权
    用于提供用于使磁记录头接地的附加接地焊盘和电连接的方法和装置

    公开(公告)号:US08045295B2

    公开(公告)日:2011-10-25

    申请号:US12145464

    申请日:2008-06-24

    IPC分类号: G11B5/55

    摘要: Method and apparatus are presented for electrically coupling a slider to ground. In one embodiment, a bonding pad is provided on a side of the slider body separate from the bonding pad(s) used for read/write signals. This separate bonding pad is electrically coupled within the slider body to components that are to be coupled to ground. A separate conductor provided on the suspension (e.g., a trace, a flex circuit, etc.) may be electrically coupled to the separate bonding pad via gold ball bonding. The conductor is also coupled to ground in the hard-disk drive device (e.g., via the preamplifier). The use of the separated bonding pad and trace may negate the need to use a conductive adhesive to electrically ground the slider via its attachment to the tongue of a slider.

    摘要翻译: 呈现用于将滑块电耦合到地面的方法和装置。 在一个实施例中,接合焊盘设置在与用于读/写信号的接合焊盘分开的滑块体的一侧上。 该单独的接合焊盘在滑块体内电耦合到要耦合到地面的部件。 设置在悬架上的单独的导体(例如,迹线,柔性电路等)可以通过金球接合电耦合到单独的接合焊盘。 导体也耦合到硬盘驱动装置中的接地(例如,经由前置放大器)。 使用分离的接合焊盘和迹线可能会使得不需要使用导电粘合剂来将滑块经由其附接件电连接到滑块的舌部。

    Power control of TAMR element during read/write transition
    54.
    发明授权
    Power control of TAMR element during read/write transition 有权
    读/写转换期间TAMR元件的功耗控制

    公开(公告)号:US07995425B2

    公开(公告)日:2011-08-09

    申请号:US12381327

    申请日:2009-03-11

    IPC分类号: G11B11/00

    摘要: A slider mounted TAMR (Thermal Assisted Magnetic Recording), DFH (Dynamic Flying Height) type read/write head using optical-laser generated surface plasmons in a small antenna to locally heat a magnetic medium, uses the same optical laser at low power to pre-heat the antenna. Maintaining the antenna at this pre-heated temperature, approximately 50% of its highest temperature during write operations, allows the DFH mechanism sufficient time to compensate for the thermal protrusion of the antenna at that lower temperature, so that thermal protrusion transients are significantly reduced when a writing operation occurs and full laser power is applied. The time constant for antenna protrusion is less than the time constant for DFH fly height compensation, so, without pre-heating, the thermal protrusion of the antenna due to absorption of optical radiation cannot be compensated by the DFH effect.

    摘要翻译: 使用在小天线中使用光学激光产生的表面等离子体激光器来局部加热磁介质的TAMR(热辅助磁记录),DFH(动态飞行高度)型读/写头的滑块,以低功率使用相同的光学激光器 - 加热天线。 将天线维持在该预热温度下,在写入操作期间其最高温度的约50%允许DFH机构有足够的时间来补偿在该较低温度下的天线的热突起,使得热突起瞬变显着降低 发生写入操作并施加全激光功率。 天线突起的时间常数小于DFH飞行高度补偿的时间常数,因此,在没有预热的情况下,由于吸收光辐射而导致的天线热突起不能被DFH效应补偿。

    Spin-torque MRAM: spin-RAM, array
    55.
    发明授权
    Spin-torque MRAM: spin-RAM, array 有权
    旋转力矩MRAM:旋转RAM,阵列

    公开(公告)号:US07852662B2

    公开(公告)日:2010-12-14

    申请号:US11789324

    申请日:2007-04-24

    IPC分类号: G11C11/00

    CPC分类号: G11C11/16

    摘要: A spin-torque MRAM array has MRAM cells arranged in rows and columns. Bit lines are connected to each of the MRAM cells on each column. Source select lines are connected to each MRAM cell of a pair of rows and are oriented orthogonally to the bit lines. Write lines are connected to the gate of the gating MOS transistor of each MRAM cell of the rows. The MRAM cells are written in a two step process with selected MRAM cells written to a first logic level (0) in a first step and selected MRAM cells written to a second logic level (1) in a second step. A second embodiment of the spin-torque MRAM array has the bit lines commonly connected together to receive the data and the source select lines commonly connected together to receive an inverse of the data for writing.

    摘要翻译: 自旋扭矩MRAM阵列具有以行和列排列的MRAM单元。 位线连接到每列上的每个MRAM单元。 源选择线连接到一对行的每个MRAM单元并且与位线正交地定向。 写入线连接到行的每个MRAM单元的选通MOS晶体管的栅极。 MRAM单元以两步过程写入,在第一步骤中将所选MRAM单元写入第一逻辑电平(0),并在第二步骤中将所选择的MRAM单元写入第二逻辑电平(1)。 自旋扭矩MRAM阵列的第二实施例具有通常连接在一起的位线,以接收通常连接在一起的数据和源选择线,以接收用于写入的数据的倒数。

    Magnetic tunnel junction (MTJ) based magnetic field angle sensor
    56.
    发明授权
    Magnetic tunnel junction (MTJ) based magnetic field angle sensor 有权
    磁隧道结(MTJ)磁场角传感器

    公开(公告)号:US07635974B2

    公开(公告)日:2009-12-22

    申请号:US11799706

    申请日:2007-05-02

    IPC分类号: G01B7/30

    摘要: A magnetic field angle sensor for measurement of a magnetic field angle over a 360° range has magnetic tunnel junction elements oriented at multiple angles. The magnetic field angle sensor includes multiple magnetic tunnel junction elements formed on a substrate that have an anti-ferromagnetic layer and pinned synthetic multiple layer. The magnetic tunnel junction elements are patterned to have a large dimensional aspect ratio and large anisotropies the pinned synthetic multiple layer of the magnetic tunnel junction elements. The magnetic tunnel junction elements are annealed in the presence of a strong magnetic field in a direction of the reference axis and the annealed for a second time with no external magnetic field so that exchange pinning is reduced and strong stress induced anisotropies of the pinned synthetic multiple layer align magnetization of the pinned synthetic multiple layer align a long axis of each of the magnetic tunnel junction elements.

    摘要翻译: 用于测量360°范围内的磁场角的磁场角传感器具有以多个角度定向的磁性隧道结元件。 磁场角传感器包括形成在具有反铁磁层和固定合成多层的基板上的多个磁性隧道结元件。 磁性隧道结元件被图案化以具有大的尺寸长宽比和大的各向异性的磁性隧道结元件的被钉合的合成多层。 磁性隧道结元件在存在强磁场的情况下在参考轴的方向上进行退火,并且在没有外部磁场的情况下第二次退火,从而减少了交换钉扎和强制应力引起的固定合成倍数的各向异性 钉扎合成多层的层对准磁化使每个磁性隧道结元件的长轴对齐。

    MTJ sensor including domain stable free layer
    57.
    发明申请
    MTJ sensor including domain stable free layer 有权
    MTJ传感器包括域稳定自由层

    公开(公告)号:US20090184704A1

    公开(公告)日:2009-07-23

    申请号:US12321772

    申请日:2009-01-26

    IPC分类号: G01R1/20

    摘要: By subdividing the free layer of a GMR/TMR device into multiple sub-elements that share common top and bottom electrodes, a magnetic detector is produced that is domain stable in the presence of large stray fields, thereby eliminating the need for longitudinal bias magnets. Said detector may be used to measure electric currents without being affected by local temperature fluctuations and/or stray fields.

    摘要翻译: 通过将GMR / TMR器件的自由层细分成共享共同的顶部和底部电极的多个子元件,产生在大的杂散场存在下稳定的磁性检测器,从而不需要纵向偏置磁体。 所述检测器可用于测量电流而不受局部温度波动和/或杂散场的影响。

    Segmented magnetic shielding elements

    公开(公告)号:US20090065909A1

    公开(公告)日:2009-03-12

    申请号:US12290703

    申请日:2008-11-03

    IPC分类号: H01L23/552 G11C11/14

    摘要: A second shield layer, under the master shielding layer, is added to a segmented MRAM array. This additional shielding is patterned so as to provide one shield per bit slice. The placement of longitudinal biasing tabs at the ends of these segmented shields ensures that each segmented shield is a single magnetic domain, making it highly effective as a shield against very small stray fields.

    Magnetic tunnel junction (MTJ) based magnetic field angle sensor
    59.
    发明申请
    Magnetic tunnel junction (MTJ) based magnetic field angle sensor 有权
    磁隧道结(MTJ)磁场角传感器

    公开(公告)号:US20080272771A1

    公开(公告)日:2008-11-06

    申请号:US11799706

    申请日:2007-05-02

    IPC分类号: G01R33/00

    摘要: A magnetic field angle sensor for measurement of a magnetic field angle over a 360° range has magnetic tunnel junction elements oriented at multiple angles. The magnetic field angle sensor includes multiple magnetic tunnel junction elements formed on a substrate that have an anti-ferromagnetic layer and pinned synthetic multiple layer. The magnetic tunnel junction elements are patterned to have a large dimensional aspect ratio and large anisotropies the pinned synthetic multiple layer of the magnetic tunnel junction elements. The magnetic tunnel junction elements are annealed in the presence of a strong magnetic field in a direction of the reference axis and the annealed for a second time with no external magnetic field so that exchange pinning is reduced and strong stress induced anisotropies of the pinned synthetic multiple layer align magnetization of the pinned synthetic multiple layer align a long axis of each of the magnetic tunnel junction elements.

    摘要翻译: 用于测量360°范围内的磁场角的磁场角传感器具有以多个角度定向的磁性隧道结元件。 磁场角传感器包括形成在具有反铁磁层和固定合成多层的基板上的多个磁性隧道结元件。 磁性隧道结元件被图案化以具有大的尺寸长宽比和大的各向异性的磁性隧道结元件的被钉合的合成多层。 磁性隧道结元件在存在强磁场的情况下在参考轴的方向上进行退火,并且在没有外部磁场的情况下第二次退火,从而减少了交换钉扎和强制应力引起的固定合成倍数的各向异性 钉扎合成多层的层对准磁化使每个磁性隧道结元件的长轴对齐。

    Reference cell scheme for MRAM
    60.
    发明申请
    Reference cell scheme for MRAM 有权
    MRAM参考单元方案

    公开(公告)号:US20080094884A1

    公开(公告)日:2008-04-24

    申请号:US12002161

    申请日:2007-12-14

    IPC分类号: G11C11/00

    CPC分类号: G11C7/14 G11C11/16

    摘要: An MRAM reference cell sub-array provides a mid-point reference current to sense amplifiers. The MRAM reference cell sub-array has MRAM cells arranged in rows and columns. Bit lines are associated with each column of the sub-array. A coupling connects the bit lines of pairs of the columns together at a location proximally to the sense amplifiers. The MRAM cells of a first of the pair of columns are programmed to a first magneto-resistive state and the MRAM cells of a second of the pair of columns are programmed to a second magneto-resistive state. When one row of data MRAM cells is selected for reading, a row of paired MRAM reference cells are placed in parallel to generate the mid-point reference current for sensing. The MRAM reference sub-array may be programmed electrically or aided by a magnetic field. A method for verifying programming of the MRAM reference sub-array is discussed.

    摘要翻译: MRAM参考单元子阵列提供了一个中点参考电流来检测放大器。 MRAM参考单元子阵列具有以行和列排列的MRAM单元。 位线与子阵列的每一列相关联。 耦合将位列对的位线连接到读出放大器的近端位置。 一对列中的第一列的MRAM单元被编程为第一磁阻状态,并且该对列中的第二对的MRAM单元被编程为第二磁阻状态。 当选择一行数据MRAM单元进行读取时,并行放置一对配对的MRAM参考单元,以生成用于检测的中点参考电流。 MRAM参考子阵列可以被电场编程或由磁场辅助。 讨论了一种用于验证MRAM参考子阵列的编程的方法。