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公开(公告)号：US20130015439A1
公开(公告)日：2013-01-17
申请号：US13616019
申请日：2012-09-14
IPC分类号： H01L27/15
CPC分类号： H01L27/1225 , H01L27/124 , H01L29/45
摘要： An object is to improve the aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit includes a channel-etched thin film transistor for driver circuit and a driver circuit wiring formed using metal. Source and drain electrodes of the thin film transistor for the driver circuit are formed using a metal. A channel layer of the thin film transistor for the driver circuit is formed using an oxide semiconductor. The display portion includes a bottom-contact thin film transistor for a pixel and a display portion wiring formed using an oxide conductor. Source and drain electrode layers of the thin film transistor for the pixel are formed using an oxide conductor. A semiconductor layer of the thin film transistor for the pixel is formed using an oxide semiconductor.
摘要翻译： 目的是提高半导体器件的开口率。 半导体器件包括驱动器电路部分和在同一衬底上的显示部分（也称为像素部分）。 驱动器电路包括用于驱动电路的通道蚀刻薄膜晶体管和使用金属形成的驱动电路布线。 用于驱动电路的薄膜晶体管的源极和漏极由金属形成。 使用氧化物半导体形成用于驱动电路的薄膜晶体管的沟道层。 显示部分包括用于像素的底接触薄膜晶体管和使用氧化物导体形成的显示部分布线。 用于像素的薄膜晶体管的源极和漏极电极层使用氧化物导体形成。 使用氧化物半导体形成用于像素的薄膜晶体管的半导体层。
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公开(公告)号：US20120264244A1
公开(公告)日：2012-10-18
申请号：US13495432
申请日：2012-06-13
IPC分类号： H01L33/08
CPC分类号： H01L21/477 , H01L21/02565 , H01L21/02664 , H01L21/383 , H01L21/46 , H01L27/1225 , H01L29/66969 , H01L29/7869 , H01L29/78693
摘要： An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith.
摘要翻译： 本发明的目的是制造具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。 在包括使用氧化物半导体膜用于包括沟道形成区域的半导体层的薄膜晶体管的半导体器件的制造方法中，进行热处理（脱水或脱氢）以提高氧化物半导体膜的纯度 并减少杂质，包括水分等。 之后，在氧气氛下进行缓慢冷却。 除了在氧化物半导体膜中排出的含有水分等的杂质以外，热处理会导致在栅极绝缘层中退出的杂质，包括氧化物半导体膜和膜之间的界面中的杂质，氧化物半导体膜和氧化物之间和之下的界面 半导体并与其接触。
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公开(公告)号：US20120244660A1
公开(公告)日：2012-09-27
申请号：US13495481
申请日：2012-06-13
IPC分类号： H01L21/44
CPC分类号： H01L29/66969 , H01L27/1225 , H01L27/124 , H01L29/24 , H01L29/42356 , H01L29/42384 , H01L29/66742 , H01L29/78606 , H01L29/78618 , H01L29/7869 , H01L29/78696
摘要： It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.
摘要翻译： 本发明的目的是提供一种高度可靠的半导体器件，其包括具有稳定电特性的薄膜晶体管。 另一个目的是以更高的生产率以更低的成本制造高可靠性的半导体器件。 在包括薄膜晶体管的半导体器件的制造方法中，使用氧化物半导体层形成具有沟道形成区域，源极区域和漏极区域的半导体层，进行热处理（脱水或脱氢的热处理） 以提高氧化物半导体层的纯度并减少诸如水分的杂质。 此外，在氧气氛下缓慢冷却经受热处理的氧化物半导体层。
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公开(公告)号：US20110287591A1
公开(公告)日：2011-11-24
申请号：US13110314
申请日：2011-05-18
IPC分类号： H01L21/336 , H01L21/20
CPC分类号： H01L21/477 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/66969 , H01L29/7869
摘要： An object is to provide a semiconductor device including an oxide semiconductor, which has stable electrical characteristics and high reliability. In a manufacturing process of a bottom-gate transistor including an oxide semiconductor layer, heat treatment in an atmosphere containing oxygen and heat treatment in vacuum are sequentially performed for dehydration or dehydrogenation of the oxide semiconductor layer. In addition, irradiation with light having a short wavelength is performed concurrently with the heat treatment, whereby elimination of hydrogen, OH, or the like is promoted. A transistor including an oxide semiconductor layer on which dehydration or dehydrogenation treatment is performed through such heat treatment has improved stability, so that variation in electrical characteristics of the transistor due to light irradiation or a bias-temperature stress (BT) test is suppressed.
摘要翻译： 目的在于提供一种具有稳定的电气特性和高可靠性的氧化物半导体的半导体装置。 在包括氧化物半导体层的底栅晶体管的制造工艺中，在氧化物气氛中进行热处理，在真空中进行热处理，依次进行氧化物半导体层的脱水或脱氢。 此外，与热处理同时进行具有短波长的光的照射，由此促进氢，OH等的消除。 包括通过这种热处理进行脱水或脱氢处理的氧化物半导体层的晶体管具有改善的稳定性，从而抑制了由于光照射或偏压温度应力（BT）测试而导致的晶体管的电特性的变化。
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公开(公告)号：US20110136301A1
公开(公告)日：2011-06-09
申请号：US12957437
申请日：2010-12-01
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroki OHARA
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Hiroki OHARA
IPC分类号： H01L21/336 , H01L21/225
CPC分类号： H01L21/465 , H01L21/02565 , H01L21/28176 , H01L21/324 , H01L21/477 , H01L29/04 , H01L29/045 , H01L29/66742 , H01L29/66969 , H01L29/78603 , H01L29/78606 , H01L29/78618 , H01L29/78642 , H01L29/78648 , H01L29/7869 , H01L29/78696
摘要： A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.
摘要翻译： 一种用于大功率应用的半导体器件，其中提供了具有高质量生产率的新型半导体材料。 形成氧化物半导体膜，然后对暴露的氧化物半导体膜进行第一热处理，以便减少氧化物半导体膜中的杂质如水分或氢。 接下来，为了进一步减少氧化物半导体膜中的杂质，例如水分或氢气，通过离子注入法，离子掺杂法等将氧添加到氧化物半导体膜中，之后，第二热处理为 在暴露的氧化物半导体膜上进行。
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公开(公告)号：US20110101335A1
公开(公告)日：2011-05-05
申请号：US12912196
申请日：2010-10-26
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/42364 , H01L29/42384 , H01L29/518 , H01L29/66969 , H01L29/78606 , H01L29/78696
摘要： An object is to provide a semiconductor device including an oxide semiconductor with stable electric characteristics can be provided. An insulating layer having many defects typified by dangling bonds is formed over an oxide semiconductor layer with an oxygen-excess mixed region or an oxygen-excess oxide insulating layer interposed therebetween, whereby impurities in the oxide semiconductor layer, such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H2O), are moved through the oxygen-excess mixed region or oxygen-excess oxide insulating layer and diffused into the insulating layer. Thus, the impurity concentration of the oxide semiconductor layer is reduced.
摘要翻译： 本发明的目的是提供一种包括具有稳定电特性的氧化物半导体的半导体器件。 在氧化物半导体层上形成具有以悬挂键为代表的许多缺陷的绝缘层，其间具有氧过剩混合区域或氧过剩氧化物绝缘层，由此氧化物半导体层中的诸如氢或水分的杂质（ 氢原子或包含氢原子如H 2 O的化合物）通过氧过剩混合区域或氧 - 过量氧化物绝缘层移动并扩散到绝缘层中。 因此，氧化物半导体层的杂质浓度降低。
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公开(公告)号：US20110017995A1
公开(公告)日：2011-01-27
申请号：US12839519
申请日：2010-07-20
IPC分类号： H01L27/12 , H01L21/84 , H01L29/786
CPC分类号： H01L27/1225 , H01L27/124
摘要： An object is to increase the aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using a metal and a channel layer is formed using an oxide semiconductor, and a driver circuit wiring formed using a metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode and a drain electrode are formed using an oxide conductor and a semiconductor layer is formed using an oxide semiconductor, and a display portion wiring formed using an oxide conductor. The thin film transistors provided in the semiconductor device are formed with a resist mask formed using a multi-tone mask.
摘要翻译： 目的是提高半导体器件的开口率。 半导体器件包括驱动器电路部分和在同一衬底上的显示部分（也称为像素部分）。 驱动器电路部分包括用于驱动电路的沟道蚀刻薄膜晶体管，其中使用金属形成源电极和漏电极，并且使用氧化物半导体形成沟道层，以及使用 金属。 显示部分包括用于像素的沟道保护薄膜晶体管，其中使用氧化物导体形成源电极和漏电极，并且使用氧化物半导体形成半导体层，以及使用氧化物导体形成的显示部分布线 。 设置在半导体器件中的薄膜晶体管形成有使用多色调掩模形成的抗蚀剂掩模。
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公开(公告)号：US20110012116A1
公开(公告)日：2011-01-20
申请号：US12835905
申请日：2010-07-14
IPC分类号： H01L27/12 , H01L29/786 , H01L21/84
CPC分类号： H01L27/124 , H01L27/1225 , H01L29/45
摘要： A highly reliable display device which has high aperture ratio and includes a transistor with stable electrical characteristics is manufactured. The display device includes a driver circuit portion and a display portion over the same substrate. The driver circuit portion includes a driver circuit transistor and a driver circuit wiring. A source electrode and a drain electrode of the driver circuit transistor are formed using a metal. A channel layer of the driver circuit transistor is formed using an oxide semiconductor. The driver circuit wiring is formed using a metal. The display portion includes a pixel transistor and a display portion wiring. A source electrode and a drain electrode of the pixel transistor are formed using a transparent oxide conductor. A semiconductor layer of the pixel transistor is formed using the oxide semiconductor. The display portion wiring is formed using a transparent oxide conductor.
摘要翻译： 制造具有高开口率并且包括具有稳定电特性的晶体管的高度可靠的显示装置。 显示装置包括在同一基板上的驱动电路部分和显示部分。 驱动器电路部分包括驱动电路晶体管和驱动电路布线。 使用金属形成驱动电路晶体管的源电极和漏电极。 使用氧化物半导体形成驱动电路晶体管的沟道层。 驱动电路布线使用金属形成。 显示部分包括像素晶体管和显示部分布线。 使用透明氧化物导体形成像素晶体管的源电极和漏电极。 使用氧化物半导体形成像素晶体管的半导体层。 显示部分布线使用透明氧化物导体形成。
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公开(公告)号：US20110012112A1
公开(公告)日：2011-01-20
申请号：US12835903
申请日：2010-07-14
IPC分类号： H01L27/06 , H01L29/786 , H01L21/34 , H01L21/336
CPC分类号： H01L27/1225 , G02F1/1368 , H01L21/02554 , H01L21/02565 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L29/45 , H01L29/78645
摘要： An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.
摘要翻译： 半导体器件的开口率提高。 驱动电路和像素设置在一个基板上，驱动电路中的第一薄膜晶体管和像素中的第二薄膜晶体管均包括栅极电极层，栅电极层上的栅极绝缘层，氧化物 栅极绝缘层上的半导体层，氧化物半导体层上的源极和漏极层以及与栅极绝缘层，氧化物半导体层以及源极和漏极上的部分氧化物半导体层接触的氧化物绝缘层 层。 栅极电极层，栅极绝缘层，氧化物半导体层，源极和漏极电极层以及第二薄膜晶体管的氧化物绝缘层各自具有透光性。
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公开(公告)号：US20110008930A1
公开(公告)日：2011-01-13
申请号：US12826021
申请日：2010-06-29
IPC分类号： H01L21/16
CPC分类号： H01L21/477 , H01L21/02565 , H01L21/02664 , H01L21/383 , H01L21/46 , H01L27/1225 , H01L29/66969 , H01L29/7869 , H01L29/78693
摘要： An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith.
摘要翻译： 本发明的目的是制造具有稳定电特性的薄膜晶体管的高度可靠的半导体器件。 在包括使用氧化物半导体膜用于包括沟道形成区域的半导体层的薄膜晶体管的半导体器件的制造方法中，进行热处理（脱水或脱氢）以提高氧化物半导体膜的纯度 并减少杂质，包括水分等。 之后，在氧气氛下进行缓慢冷却。 除了在氧化物半导体膜中排出的含有水分等的杂质以外，热处理会导致在栅极绝缘层中退出的杂质，包括氧化物半导体膜和膜之间的界面中的杂质，氧化物半导体膜和氧化物之间和之下的界面 半导体并与其接触。
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