公开(公告)号：US20100266418A1

公开(公告)日：2010-10-21

申请号：US12107796

申请日：2008-04-23

申请人： Shinya IMANO ,  Kunihiro Ichikawa ,  Hiroyuki Doi ,  Katsumi Tanaka

发明人： Shinya IMANO ,  Kunihiro Ichikawa ,  Hiroyuki Doi ,  Katsumi Tanaka

IPC分类号： F01D5/14 ,  B23P15/02

CPC分类号： C22C19/051 ,  C22C19/05 ,  F01D5/005 ,  F05D2230/235 ,  F05D2230/80

摘要： In a gas turbine blade where a part of the γ′ phase precipitation strengthened type Ni-based alloy base material is composed of a weld metal, the weld metal is a Ni-based alloy containing Ta from 4.8 to 5.3 wt. %, Cr from 18 to 23 wt. %, Co from 12 to 17 wt. %, W from 14 to 18 wt. %, C from 0.03 to 0.1 wt. %, Mo from 1 to 2 wt. %, and Al of 1 wt. % or less, in which the oxygen content is 0 to 30 ppm, the Ti content from 0 to 0.1 wt. %, and the Re content from 0 to 0.5 wt. %. A blade base metal is manufactured by the step of stripping, the step of solution heat treatment where the γ′ phase is dissolved again, the step of welding in an inert gas chamber by a TIG method using a welding wire where the weld metal can be obtained, the step of HIP treatment at 1100° C. to 1150° C., and the step of an aging treatment at 835° C. to 855° C.

摘要翻译： 在γ相析出强化型Ni基合金基材的一部分由焊接金属构成的燃气轮机叶片中，焊接金属为含有4.8〜5.3重量％的Ta的Ni系合金。 ％，Cr为18〜23wt。 ％，Co为12〜17wt。 ％，W为14〜18wt。 ％，C为0.03〜0.1wt。 ％，Mo为1〜2wt。 ％，Al为1重量％。 ％以下，氧含量为0〜30ppm，Ti含量为0〜0.1重量％。 ％，Re含量为0〜0.5wt。 ％。 通过剥离步骤，再次溶解γ'相的固溶热处理步骤，通过TIG法使用焊丝在焊接金属可以焊接的焊丝的惰性气体室中进行焊接的工序来制造刀片母材 在1100℃至1150℃下进行HIP处理的步骤，以及在835℃至855℃的时效处理步骤。

公开(公告)号：US07459035B2

公开(公告)日：2008-12-02

申请号：US10864418

申请日：2004-06-10

申请人： Shinya Imano ,  Hiroyuki Doi ,  Hirotsugu Kawanaka ,  Eiji Saitou

发明人： Shinya Imano ,  Hiroyuki Doi ,  Hirotsugu Kawanaka ,  Eiji Saitou

IPC分类号： C22C19/05 ,  C22C30/00

CPC分类号： C22F1/10 ,  C22C19/05 ,  C22C19/056 ,  C22C19/058 ,  C22C30/00 ,  C22C38/06 ,  C22C38/48 ,  C22C38/50 ,  F05B2220/301

摘要： To provide a rotor material preferable for a steam turbine of which main steam temperature is 675° C. or more, particularly exceeding 700° C., and a steam turbine plant having a rotor formed by the material, the invention provides a steam turbine plant including a very-high-pressure turbine of which steam inlet temperature is 675 to 725° C. and steam outlet temperature is 650° C. or less, a high-pressure turbine, and a medium-low-pressure turbine, wherein a rotor of the very-high-pressure turbine is formed from a forged material of NiFe-base alloy containing: 14 to 18 weight % Cr, 15 to 45 weight % Fe, 1.0 to 2.0 weight % Al, 1.0 to 1.8 weight % Ti, C and N of which the sum is 0.05 or less weight %, and Nb in the range specified by the formula: 3.5−(Fe weight %)/20

摘要翻译： 为了提供优选主蒸汽温度为675℃或更高，特别是超过700℃的蒸汽轮机的转子材料，以及具有由该材料形成的转子的蒸汽轮机设备，本发明提供了一种汽轮机设备 包括蒸汽入口温度为675〜725℃，蒸汽出口温度为650℃以下的高压涡轮机，高压涡轮机和中低压涡轮机，其中转子 的超高压涡轮机由NiFe基合金的锻造材料形成，该锻造材料包含：14-18重量％的Cr，15-45重量％的Fe，1.0-2.0重量％的Al，1.0-1.8重量％的Ti，C 并且其总和为0.05重量％以下的Nb，Nb在由式3.5-（Fe重量％）/ 20 <（Nb重量％）<4.5-（Fe重量％）/ 20）规定的范围内。

公开(公告)号：US07169241B2

公开(公告)日：2007-01-30

申请号：US10804065

申请日：2004-03-19

申请人： Hideki Tamaki ,  Akira Yoshinari ,  Akira Okayama ,  Tsuyoshi Takano ,  Hiroyuki Doi

发明人： Hideki Tamaki ,  Akira Yoshinari ,  Akira Okayama ,  Tsuyoshi Takano ,  Hiroyuki Doi

IPC分类号： C22C19/05

CPC分类号： C22C19/056 ,  C22C19/057

摘要： A Ni-based alloy hardened with the γ′ phase, which is able to exhibit not only superior strength at high temperatures, but also excellent hot corrosion resistance and oxidation resistance at high temperatures in spite of containing no Re or reducing the amount of Re. The Ni-based superalloy contains, by weight, C: 0.01 to 0.5%, B: 0.01 to 0.04%, Hf: 0.1 to 2.5%, Co: 0.8 to 15%, Ta: more than 0% but less than 8.5%, Cr: 1.5 to 16%, Mo: more than 0% but less than 1.0%, W: 5 to 14%, Ti: 0.1 to 4.75%, Al: 2.5 to 7%, Nb: more than 0% but less than 4%, V: 0 to less than 1.0%, Zr: 0 to less than 0.1%, Re: 0 to less than 9%, at least one of platinum group elements: 0 to less than 0.5% in total, at least one of rare earth elements: 0 to less than 0.1% in total, and the rest being Ni except for unavoidable impurities.

摘要翻译： 用γ-相硬化的Ni基合金，不仅在高温下不仅表现出优异的强度，而且在高温下也表现出优异的耐热腐蚀性和抗氧化性，尽管不含Re或减少Re的量。 Ni基超合金含有C：0.01〜0.5％，B：0.01〜0.04％，Hf：0.1〜2.5％，Co：0.8〜15％，Ta：0％以上且小于8.5％ Cr：1.5〜16％，Mo：大于0％但小于1.0％，W：5〜14％，Ti：0.1〜4.75％，Al：2.5〜7％，Nb：大于0％ ％，V：0〜小于1.0％，Zr：0〜小于0.1％，Re：0〜小于9％，铂族元素中的至少一种：0〜小于0.5％ 稀土元素总计为0〜小于0.1％，其余为Ni，不含不可避免的杂质。

公开(公告)号：US20070014671A1

公开(公告)日：2007-01-18

申请号：US11480978

申请日：2006-07-06

申请人： Masahiko Arai ,  Hirotsugu Kawanaka ,  Hiroyuki Doi ,  Kenichi Murata ,  Hajime Toriya

发明人： Masahiko Arai ,  Hirotsugu Kawanaka ,  Hiroyuki Doi ,  Kenichi Murata ,  Hajime Toriya

IPC分类号： F03B3/12

CPC分类号： B22D13/02 ,  C22C38/001 ,  C22C38/04 ,  C22C38/44 ,  C22C38/46 ,  C22C38/48 ,  F05B2260/60

摘要： A pipe for a steam turbine is formed of a centrifugal casting material to achieve resistance against higher temperatures and improve reliability of the pipe by employing, as a pipe material, a centrifugal casting material normalized to contain uniform and finer crystal grains. The centrifugal casting material is made of steel having a columnar structure in the radial direction with the crystal grain size number of 5 or more in a plane perpendicular to the radial direction. The steel includes 0.05-0.5% by mass C, not more than 1.0% Si, 0.05-1.5% Mn, 0.01-2.5% Ni, 8.0-13.0% Cr, 0.05-2.5% Mo, not more than 3.0% W, 0.05-0.35% V, 0.01-0.5% Nb, not more than 5% Co, 0.01-0.1% N, not more than 0.03% B, and not more than 0.05% Al.

摘要翻译： 用于汽轮机的管由离心铸造材料形成，以通过采用归一化为含有均匀和更细晶粒的离心铸造材料作为管材料来实现耐高温性和提高管的可靠性。 离心铸造材料由垂直于径向方向的平面中的晶粒尺寸数为5以上的在径向具有柱状结构的钢制成。 该钢含有0.05〜0.5质量％的C，不大于1.0％的Si，0.05-1.5％的Mn，0.01-2.5％的Ni，8.0-13.0％的Cr，0.05-2.5％的Mo，不大于3.0％的W，0.05 -0.35％V，0.01-0.5％Nb，不大于5％Co，0.01-0.1％N，不大于0.03％B和不大于0.05％Al。

公开(公告)号：US20060088411A1

公开(公告)日：2006-04-27

申请号：US11206131

申请日：2005-08-18

申请人： Shinya Imano ,  Hiroyuki Doi ,  Isao Takehara ,  Shigeo Sakurai

发明人： Shinya Imano ,  Hiroyuki Doi ,  Isao Takehara ,  Shigeo Sakurai

IPC分类号： F04D29/44

CPC分类号： C22C19/056 ,  C22C19/058 ,  C22F1/10 ,  F01D5/02 ,  F01D25/005

摘要： A Ni—Fe based super alloy having high strength and toughness at high temperatures even when used in high-temperature environments, and a process of producing the super alloy. A turbine disk using the super alloy, a process of producing the turbine disk, a turbine spacer using the super alloy, and a process of producing the turbine spacer, as well as a gas turbine are also provided. The Ni—Fe based super alloy contains not more than 0.03% by weight of C, 14-18% of Cr, 15-45% of Fe, 0.5-2.0% of Al, not more than 0.05% of N, 0.5 to 2.0% of Ti, 1.5-5.0% of Nb, and Ni as a main ingredient.

摘要翻译： 即使在高温环境下使用时，也能够在高温下具有高强度和韧性的Ni-Fe系超合金，以及超合金的制造方法。 还提供了使用超级合金的涡轮盘，制造涡轮盘的方法，使用超级合金的涡轮间隔件，以及制造涡轮间隔件的工艺以及燃气轮机。 Ni-Fe基超合金含有不超过0.03重量％的Cr，14-18％的Cr，15-45％的Fe，0.5-2.0％的Al，不超过0.05的N，0.5-2.0 Ti的％，Nb的1.5〜5.0％，Ni为主要成分。

公开(公告)号：US06818077B2

公开(公告)日：2004-11-16

申请号：US10429801

申请日：2003-05-06

申请人： Akira Yoshinari ,  Hideki Tamaki ,  Hiroyuki Doi

发明人： Akira Yoshinari ,  Hideki Tamaki ,  Hiroyuki Doi

IPC分类号： C22C1905

CPC分类号： C22C19/058 ,  C22C19/056

摘要： A nickel-based superalloy containing 12.0 to 16.0% by weight of Cr, 4.0 to 9.0% by weight of Co, 3.4 to 4.6% by weight of Al, 0.5 to 1.6% by weight of Nb, 0.05 to 0.16% by weight of C, 0.005 to 0.025% by weight of B, and at least one of Ti, Ta and Mo. Amounts of Ti, Ta and Mo are ones calculated by the equations (1) and (2), wherein TiEq is 4.0 to 6.0 and MoEq is 5.0 to 8.0. TiEq=Ti % by weight+0.5153×Nb % by weight+0.2647×Ta % by weight  (1) MoEq−Mo % by weight+0.5217×W % by weight+0.5303×Ta % by weight+1.0326×Nb % by weight  (2)

摘要翻译： 含有12.0〜16.0重量％的Cr，4.0〜9.0重量％的Co，3.4〜4.6重量％的Al，0.5〜1.6重量％的Nb，0.05〜0.16重量％的C的镍系超合金 ，0.005〜0.025重量％的B，以及Ti，Ta和Mo中的至少一种，Ti，Ta和Mo中的至少一个是通过式（1）和（2）计算的，TiEq为4.0〜6.0，MoEq 为5.0〜8.0。

公开(公告)号：US06784520B2

公开(公告)日：2004-08-31

申请号：US10411268

申请日：2003-04-11

申请人： Hiroyuki Doi

发明人： Hiroyuki Doi

IPC分类号： H01L29861

CPC分类号： H01L29/866 ,  H01L21/26586 ,  H01L29/417 ,  H01L29/66106

摘要： A constant voltage device includes n-type and p-type doped layers. The n-type doped layer is formed by heavily doping with an n-type impurity an upper portion of a p-type silicon semiconductor substrate, in an active region defined by an isolating insulator film. The p-type doped layer is formed by doping the region under the n-type doped layer with a p-type impurity. The n-type and p-type doped layers are provided to form two layers in parallel with the substrate surface of the semiconductor substrate, whereby a pn junction formed between the n-type and p-type doped layers creates a diode structure. Impurity concentration in the p-type doped layer is established so that the impurity concentration of a portion adjacent the isolating insulator film is lower that that of the rest.

摘要翻译： 恒电压装置包括n型和p型掺杂层。 在由隔离绝缘膜限定的有源区中，通过在p型硅半导体衬底的上部重掺杂n型杂质而形成n型掺杂层。 p型掺杂层通过用p型杂质掺杂在n型掺杂层下方的区域而形成。 提供n型和p型掺杂层以与半导体衬底的衬底表面平行形成两层，由此形成在n型掺杂层和p型掺杂层之间的pn结形成二极管结构。 p型掺杂层中的杂质浓度被建立为使得邻近隔离绝缘膜的部分的杂质浓度低于其余部分的杂质浓度。

公开(公告)号：US06753222B2

公开(公告)日：2004-06-22

申请号：US10271879

申请日：2002-10-15

申请人： Ken Mimuro ,  Hiroyuki Doi ,  Yasushi Okuda

发明人： Ken Mimuro ,  Hiroyuki Doi ,  Yasushi Okuda

IPC分类号： H01L21336

CPC分类号： H01L27/11526 ,  H01L27/105 ,  H01L27/11534

摘要： A method for forming a semiconductor device is provided that allows a desirable semiconductor device to be obtained by preventing a gate electrode of a non-volatile semiconductor memory from having an abnormal shape and the surfaces of high concentration source and drain regions of the non-volatile semiconductor memory from being worn away. The method includes a first step of forming a non-volatile semiconductor memory in a first region of a substrate of the semiconductor device and a second step of forming a semiconductor device in a second region on the substrate. The non-volatile semiconductor memory includes a first gate including a tunnel insulating film, a floating gate electrode, a capacitor insulating film, and a control gate electrode, and the semiconductor device includes a second gate including a gate insulating film and a gate electrode. In this method, during patterning of the second gate, a surface of the first gate is covered with a protective film that hardly can be etched by an etchant used for the patterning of the second gate.

摘要翻译： 提供一种用于形成半导体器件的方法，其通过防止非易失性半导体存储器的栅电极具有异常形状并且使非挥发性的高浓度源极和漏极区域的表面能够获得期望的半导体器件 半导体存储器被磨损掉。 该方法包括在半导体器件的衬底的第一区域中形成非易失性半导体存储器的第一步骤和在衬底上的第二区域中形成半导体器件的第二步骤。 非易失性半导体存储器包括：第一栅极，其包括隧道绝缘膜，浮栅电极，电容绝缘膜和控制栅电极，并且所述半导体器件包括包括栅极绝缘膜和栅电极的第二栅极。 在该方法中，在图案化第二栅极期间，第一栅极的表面被几乎不能被用于第二栅极图案化的蚀刻剂所蚀刻的保护膜覆盖。

公开(公告)号：US06419453B2

公开(公告)日：2002-07-16

申请号：US09797989

申请日：2001-03-05

申请人： Yutaka Fukui ,  Hiroyuki Doi ,  Masahiko Arai ,  Ryo Hiraga ,  Kenichiro Nomura ,  Toshio Fujita ,  Yasuhiko Tanaka

发明人： Yutaka Fukui ,  Hiroyuki Doi ,  Masahiko Arai ,  Ryo Hiraga ,  Kenichiro Nomura ,  Toshio Fujita ,  Yasuhiko Tanaka

IPC分类号： B63H126

CPC分类号： F01D5/28 ,  C21D8/0205 ,  C21D9/28 ,  C21D9/38 ,  C22C38/001 ,  C22C38/44 ,  C22C38/46 ,  C22C38/48 ,  C22C38/52 ,  C22C38/54 ,  F01D25/005 ,  F05C2201/0463 ,  F05C2201/0466 ,  F05D2220/31 ,  F05D2240/60 ,  F05D2300/131 ,  F05D2300/132

摘要： The main object of the present invention is to provide a steam turbine rotor shaft whose high-temperature strength is excellent at a selected temperature of 650 degrees C. A steam turbine rotor shaft comprising 0.05% to 0.20% by weight of carbon, 0.20% or less by weight of silicon, 0.05% to 1.5% by weight of manganese, 0.01% to 1.0% by weight of nickel, 9.0% to 13.0% by weight of chrome, 0.05% to 2.0% by weight of molybdenum, 0.5% to 5.0% by weight of tungsten, 0.05% to 0.30% by weight of vanadium, 0.01% to 0.20% by weight of niobium, 0.5% to 10.0% by weight of cobalt, 0.01% to 0.1% by weight of nitrogen, 0.001% to 0.030% by weight of boron, 0.0005% to 0.006% by weight of aluminum, and the remaining parts substantially comprising iron and inevitable impurities.

摘要翻译： 本发明的主要目的在于提供一种蒸汽轮机转子轴，其特征在于，在选定温度为650度的汽轮机转子轴的选定温度下，包括0.05重量％至0.20重量％的碳，0.20重量％以下，通过 重量的硅，0.05〜1.5％的锰，0.01〜1.0％的镍，9.0〜13.0％的铬，0.05〜2.0％的钼，0.5〜5.0％的 重量的钨，0.05〜0.30％的钒，0.01〜0.20％的铌，0.5〜10.0％的钴，0.01〜0.1％的氮，0.001〜0.030％的 重量的硼，0.0005％至0.006％的铝，其余部分基本上包含铁和不可避免的杂质。

公开(公告)号：US06388308B1

公开(公告)日：2002-05-14

申请号：US09239949

申请日：1999-01-29

申请人： Hirotsugu Honda ,  Hiroyuki Doi ,  Katsujirou Arai ,  Takuo Akashi ,  Naritsugu Yoshii

发明人： Hirotsugu Honda ,  Hiroyuki Doi ,  Katsujirou Arai ,  Takuo Akashi ,  Naritsugu Yoshii

IPC分类号： H01L29861

CPC分类号： H01L29/66106 ,  H01L29/0638 ,  H01L29/866

摘要： A field oxide surrounding an active region, an N-type doped layer formed in the active region, and an electrode formed on the field oxide in the vicinity of the active region are provided on a P-type semiconductor substrate. During the operation as a constant voltage device, a desired voltage is applied to the electrode. Then, trapping of carriers in the interface between the field oxide and the semiconductor region can be suppressed, although such trapping is ordinarily caused by a reverse breakdown phenomenon at the pn junction between the doped layer and the P-type semiconductor substrate. Accordingly, the variation in strength of the electric field between the doped layer and the semiconductor substrate can be suppressed. As a result, it is possible to suppress a variation in reverse withstand voltage, which is usually caused by a reverse breakdown voltage at a pn junction, for a semiconductor device functioning as a constant voltage device.

摘要翻译： 围绕有源区的场氧化物，在有源区中形成的N型掺杂层和形成在有源区附近的场氧化物上的电极设置在P型半导体衬底上。 在作为恒压装置的操作期间，将期望的电压施加到电极。 然后，可以抑制在场氧化物和半导体区域之间的界面中的载流子的捕获，尽管这种捕获通常由掺杂层和P型半导体衬底之间的pn结处的反向击穿现象引起。 因此，可以抑制掺杂层和半导体衬底之间的电场强度的变化。 结果，对于作为恒压器件起作用的半导体器件，可以抑制通常由pn结上的反向击穿电压引起的反向耐受电压的变化。