公开(公告)号：US07911584B2

公开(公告)日：2011-03-22

申请号：US10563175

申请日：2004-04-13

申请人： Wolfgang Singer ,  Joachim Wietzorrek ,  Joachim Hainz ,  Gabriele Weirauch ,  Manfred Maul

发明人： Wolfgang Singer ,  Joachim Wietzorrek ,  Joachim Hainz ,  Gabriele Weirauch ,  Manfred Maul

IPC分类号： G03B27/54

CPC分类号： G03F7/702 ,  G02B17/0647 ,  G03F7/70233 ,  G03F7/70358 ,  G21K1/06

摘要： The present invention relates to an illumination system for microlithography, especially for wavelengths ≦193 nm, especially preferably for EUV lithography for illuminating a field in a field plane with at least one optical integrator which splits up a light bundle emitted by a light source into a plurality of light channels each having a light intensity,characterized in thata filter is provided in the light path from the light source to the field plane, with the filter comprising filter elements which are configured in such a way that the light intensity of at least one light channel is reduced in the light path after the filter element.

摘要翻译： 本发明涉及用于微光刻的照明系统，特别是对于波长为193nm的照明系统，特别优选用于用至少一个光学积分器照射场平面中的场的EUV光刻，所述光学积分器将由光源发射的光束分成 多个光通道各自具有光强度，其特征在于，在从光源到场平面的光路中提供滤光器，滤光器包括滤光元件，其以如下方式配置，使得光 在过滤元件之后的光路中减少至少一个光通道。

公开(公告)号：US20090323043A1

公开(公告)日：2009-12-31

申请号：US12509738

申请日：2009-07-27

申请人： Nils Dieckmann ,  Manfred Maul ,  Christian Hettich ,  Oliver Natt

发明人： Nils Dieckmann ,  Manfred Maul ,  Christian Hettich ,  Oliver Natt

IPC分类号： G03B27/72

CPC分类号： G03F7/70191

摘要： An illumination system of a microlithographic projection exposure apparatus can include at least one transmission filter which has a different transmittance at least at two positions and which is arranged between a pupil plane and a field plane). The transmittance distribution can be determined such that it has field dependent correcting effects on the ellipticity. In some embodiments the telecentricity and/or the irradiance uniformity is not affected by this correction.

摘要翻译： 微光刻投影曝光装置的照明系统可以包括至少一个至少在两个位置处具有不同透射率并且布置在瞳孔平面和场平面之间的透射滤光器。 可以确定透射率分布，使得其具有对椭圆率的场依赖校正效应。 在一些实施例中，远心度和/或辐照度均匀性不受该校正的影响。

公开(公告)号：US07542217B2

公开(公告)日：2009-06-02

申请号：US11015312

申请日：2004-12-17

申请人： Wolfgang Singer ,  Markus Deguenther ,  Birgit Kuerz ,  Rafael Egger ,  Johannes Wangler ,  Manfred Maul

发明人： Wolfgang Singer ,  Markus Deguenther ,  Birgit Kuerz ,  Rafael Egger ,  Johannes Wangler ,  Manfred Maul

IPC分类号： G02B13/08 ,  G02B3/02 ,  G02B9/00 ,  G02B3/00 ,  G03B27/54

CPC分类号： G03F7/70108 ,  G03F7/70183

摘要： A beam reshaping unit for an illumination system of a microlithographic projection exposure apparatus includes a first beam reshaping element having a first beam reshaping surface and a second beam reshaping element having a second beam reshaping surface which faces the first beam reshaping surface. The two beam reshaping surfaces are rotationally symmetrical with respect to an optical axis of the beam reshaping unit. At least the first beam reshaping surface has a concavely or convexly curved region.

摘要翻译： 用于微光刻投影曝光装置的照明系统的光束整形单元包括具有第一光束重塑表面的第一光束重塑元件和具有面向第一光束重塑表面的第二光束重塑表面的第二光束重塑元件。 两个光束整形表面相对于光束整形单元的光轴旋转对称。 至少第一光束整形表面具有凹或凸曲面的区域。

公开(公告)号：US20090021716A1

公开(公告)日：2009-01-22

申请号：US12190308

申请日：2008-08-12

申请人： Johannes Wangler ,  Heiko Siekmann ,  Kenneth Weible ,  Ralf Scharnweber ,  Manfred Maul ,  Markus Deguenther ,  Michael Layh ,  Axel Scholz ,  Uwe Spengler ,  Reinhard Voelkel

发明人： Johannes Wangler ,  Heiko Siekmann ,  Kenneth Weible ,  Ralf Scharnweber ,  Manfred Maul ,  Markus Deguenther ,  Michael Layh ,  Axel Scholz ,  Uwe Spengler ,  Reinhard Voelkel

IPC分类号： G03B27/54

CPC分类号： G03F7/70191 ,  G02B3/0056 ,  G02B27/0911 ,  G03F7/70058 ,  G03F7/70075 ,  G03F7/70083 ,  G03F7/70158

摘要： Illumination systems for microlithographic projection exposure apparatus, as well as related systems, components and methods are disclosed. In some embodiments, an illumination system includes one or more scattering structures and an optical integrator that produces a plurality of secondary light sources.

摘要翻译： 公开了用于微光刻投影曝光装置的照明系统，以及相关系统，组件和方法。 在一些实施例中，照明系统包括一个或多个散射结构和产生多个次级光源的光学积分器。

公开(公告)号：US07180667B2

公开(公告)日：2007-02-20

申请号：US10817527

申请日：2004-04-01

申请人： Daniel Krähmer ,  Toralf Gruner ,  Wilhelm Ulrich ,  Birgit Enkisch ,  Michael Gerhard ,  Martin Brunotte ,  Christian Wagner ,  Winfried Kaiser ,  Manfred Maul ,  Christof Zaczek

发明人： Daniel Krähmer ,  Toralf Gruner ,  Wilhelm Ulrich ,  Birgit Enkisch ,  Michael Gerhard ,  Martin Brunotte ,  Christian Wagner ,  Winfried Kaiser ,  Manfred Maul ,  Christof Zaczek

IPC分类号： G02B5/30

CPC分类号： G03F7/70966 ,  G02B1/02 ,  G02B1/08 ,  G02B5/3083 ,  G03F7/70225 ,  G03F7/70241 ,  G03F7/70566 ,  G03F7/70958 ,  Y10S359/90

摘要： An objective for a microlithography projection system has at least one fluoride crystal lens. The effects of birefringence, which are detrimental to the image quality, are reduced if the lens axis of the crystal lens is oriented substantially perpendicular to the {100}-planes or {100}-equivalent crystallographic planes of the fluoride crystal. If two or more fluoride crystal lenses are used, they should have lens axes oriented in the (100)-, (111)-, or (110)-direction of the crystallographic structure, and they should be oriented at rotated positions relative to each other. The birefringence-related effects are further reduced by using groups of mutually rotated (100)-lenses in combination with groups of mutually rotated (111)- or (110)-lenses. A further improvement is also achieved by applying a compensation coating to at least one optical element of the objective.

摘要翻译： 微光刻投影系统的目的在于至少有一个氟化物晶体透镜。 如果晶体透镜的透镜轴基本上垂直于氟化物晶体的{100} - 平面或{100}等价晶面而取向，对图像质量有害的双折射效应将被降低。 如果使用两个或多个氟化物晶体透镜，它们应该具有在晶体结构的（100） - ，（111） - 或（110）方向上定向的透镜轴，并且它们应当相对于每个 其他。 通过使用相互旋转（100） - 相互组合的组相互旋转（111） - 或（110） - 相组合来进一步减少双折射相关效应。 通过对物镜的至少一个光学元件施加补偿涂层也可实现进一步的改进。

公开(公告)号：US07031069B2

公开(公告)日：2006-04-18

申请号：US10831293

申请日：2004-04-26

申请人： Toralf Gruner ,  Manfred Maul ,  Rudolf Von Buenau

发明人： Toralf Gruner ,  Manfred Maul ,  Rudolf Von Buenau

IPC分类号： G02B27/10

CPC分类号： G03F7/70058 ,  G03F7/70225 ,  G03F7/70566 ,  G03F7/70966 ,  Y10S359/90

摘要： A microlithographic illumination method for imaging a pattern arranged in an object plane of a projection lens onto an image plane of the projection lens, under which a special means for optically correcting the optical path lengths of s-polarized and p-polarized light such that light beams of both polarizations will either traverse essentially the same optical path length between the object plane and the image plane or any existing difference in their optical path lengths will be retained, largely independently of their angles of incidence on the image plane, which will allow avoiding contrast variations due to pattern orientation when imaging finely structured patterns, is disclosed. The contrast variations may be caused by uncorrected projection lenses due to their employment of materials that exhibit stress birefringence and/or coated optical components, such as deflecting mirrors, that are used at large angles of incidence.

公开(公告)号：US08169594B2

公开(公告)日：2012-05-01

申请号：US12509738

申请日：2009-07-27

申请人： Nils Dieckmann ,  Manfred Maul ,  Christian Hettich ,  Oliver Natt

发明人： Nils Dieckmann ,  Manfred Maul ,  Christian Hettich ,  Oliver Natt

IPC分类号： G03B27/54 ,  G03B27/42

CPC分类号： G03F7/70191

摘要： An illumination system of a microlithographic projection exposure apparatus can include at least one transmission filter which has a different transmittance at least at two positions and which is arranged between a pupil plane and a field plane). The transmittance distribution can be determined such that it has field dependent correcting effects on the ellipticity. In some embodiments the telecentricity and/or the irradiance uniformity is not affected by this correction.

摘要翻译： 微光刻投影曝光装置的照明系统可以包括至少一个至少在两个位置处具有不同透射率并且布置在瞳孔平面和场平面之间的透射滤光器。 可以确定透射率分布，使得其具有对椭圆率的场依赖校正效应。 在一些实施例中，远心度和/或辐照度均匀性不受该校正的影响。

公开(公告)号：US07875865B2

公开(公告)日：2011-01-25

申请号：US12098739

申请日：2008-04-07

申请人： Axel Scholz ,  Markus Weiss ,  Manfred Maul ,  Philipp Bosselmann

发明人： Axel Scholz ,  Markus Weiss ,  Manfred Maul ,  Philipp Bosselmann

IPC分类号： G03B27/42

CPC分类号： G01J1/42 ,  B82Y10/00 ,  G03F7/70033 ,  G03F7/70141 ,  G03F7/70558 ,  H05G2/00

摘要： The disclosure relates to an EUV (extreme ultraviolet) illumination system. The system can include at least one EUV light source, and an aperture stop and sensor arrangement for the measurement of intensity fluctuations and/or position changes of the EUV light source, in particular in the range of the effectively utilized wavelengths, or of one of the intermediate images of the EUV light source. The aperture stop and sensor arrangement can include an aperture stop and an EUV position sensor. The aperture stop and sensor arrangement can be arranged in such a way that the aperture stop allows a certain solid angle range of the radiation originating from the EUV light source or from one of its intermediate images to fall on the EUV position sensor.

摘要翻译： 本公开涉及EUV（极紫外）照明系统。 该系统可以包括至少一个EUV光源，以及用于测量EUV光源的强度波动和/或位置变化的孔径光阑和传感器装置，特别是在有效使用的波长的范围内，或者 EUV光源的中间图像。 孔径光阑和传感器装置可以包括孔径光阑和EUV位置传感器。 孔径光阑和传感器装置可以以这样的方式布置，使得孔径光阑允许源自EUV光源或其中间图像之一的辐射的特定立体角范围落在EUV位置传感器上。

公开(公告)号：US20100060988A1

公开(公告)日：2010-03-11

申请号：US12565481

申请日：2009-09-23

申请人： Sascha Bleidistel ,  Manfred Maul

发明人： Sascha Bleidistel ,  Manfred Maul

IPC分类号： G02B27/00

CPC分类号： G02B26/0816 ,  G02B7/028 ,  G02B27/0068 ,  G02F1/293 ,  G03F7/70258 ,  G03F7/70308 ,  G03F7/70891

摘要： The disclosure relates to a correction light device for the irradiation of optical elements of an optical arrangement, in particular a lens, such a microlithography lens having a correction light, which include at least one correction light source and at least one mirror arrangement that deflects the light from the correction light source in the beam path to the optical element such that at least part of at least one surface of at least one optical element of the optical arrangement are irradiated in a locally and/or temporally variable fashion. The correction light strikes the surface of the optical element at a flat angle such that the obtuse angle between the optical axis of the optical arrangement at the location of the optical element and the correction light beam is less than or equal to 105°.

摘要翻译： 本公开涉及一种用于照射光学装置的光学元件的校正光装置，特别是透镜，具有校正光的这种微光学透镜，其包括至少一个校正光源和至少一个反射镜装置， 来自光路中的校正光源的光到光学元件，使得光学装置的至少一个光学元件的至少一个表面的至少一部分以局部和/或时间上可变的方式照射。 校正光以平坦角度照射到光学元件的表面，使得在光学元件的位置处的光学装置的光轴与校正光束之间的钝角小于或等于105°。

公开(公告)号：US20090262324A1

公开(公告)日：2009-10-22

申请号：US12464730

申请日：2009-05-12

申请人： Michael Patra ,  Markus Deguenther ,  Michael Layh ,  Johannes Wangler ,  Manfred Maul

发明人： Michael Patra ,  Markus Deguenther ,  Michael Layh ,  Johannes Wangler ,  Manfred Maul

IPC分类号： G03B27/80

CPC分类号： G03F7/7085 ,  G03F7/70116

摘要： A microlithographic projection exposure apparatus (1) comprises an illumination system (4) with an illumination optics (5) for illuminating an illumination field in a reticle plane (6). The illumination optics (5) further includes a light distribution device (12a) which comprises a light deflection array (12) of separate elements and an optical assembly (21, 23 to 26) which converts the light intensity distribution defined by the light distribution device (12a) in a first plane (19) of the illumination optics (5) into an illumination angle distribution in the reticle plane (6). Downstream of an output coupling device (17), which is arranged in the light path between the light deflection array (12) and the reticle plane (6), a space and time resolving detection device (30) is exposed to outcoupled illumination light (31) in such a way that the detection device (30) detects a light intensity distribution corresponding to the light intensity distribution in the first plane (19). The detection device (30) allows the influence of separate elements or groups of separate elements on the light intensity distribution in the first plane (19) to be determined, particularly by varying said separate elements or groups of separate elements over time. The result is an illumination optics in which the function of the light deflection array is performed during normal operation.

摘要翻译： 微光刻投影曝光装置（1）包括具有用于照亮标线板平面（6）中的照明场的照明光学器件（5）的照明系统（4）。 照明光学器件（5）还包括配光装置（12a），其包括分离元件的光偏转阵列（12）和光学组件（21,23至26），该光学组件（21,23至26）将由光分配装置 （5）的第一平面（19）中的光线（12a）成为所述掩模版平面（6）中的照明角度分布。 布置在光偏转阵列（12）和光罩平面（6）之间的光路中的输出耦合装置（17）的下游，空间和时间分辨检测装置（30）暴露于外耦合照明光 31），使得检测装置（30）检测对应于第一平面（19）中的光强度分布的光强度分布。 检测装置（30）允许确定分离的元件或单独元件组对第一平面（19）中的光强度分布的影响，特别是通过随时间改变所述单独元件或单独元件组。 结果是在正常操作期间执行光偏转阵列的功能的照明光学器件。