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    Lithographic apparatus and device manufacturing method using overlay measurement quality indication
    53.
    发明授权
    Lithographic apparatus and device manufacturing method using overlay measurement quality indication 有权
    平版印刷设备和设备制造方法使用覆盖测量质量指示

    公开(公告)号：US07391513B2

    公开(公告)日：2008-06-24

    申请号：US11391690

    申请日：2006-03-29

    申请人： Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Everhardus Cornelis Mos ,  Stefan Carolus Jacobus Antonius Keij

    发明人： Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Everhardus Cornelis Mos ,  Stefan Carolus Jacobus Antonius Keij

    IPC分类号： G01B11/00 ,  G06K9/00

    CPC分类号： G03F7/70633 ,  G03F7/70483

    摘要： A lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate includes two reference gratings provided in the substrate and two measurement gratings on top of the reference gratings, the measurement gratings being similar to the reference gratings, and oppositely biased in a single direction relative to the respective reference gratings. An overlay measurement device with an image sensor is used for obtaining pixel data of a measurement spot in each of the two measurement gratings. Asymmetry for each pixel in the measurement spot is measured, and from the pixel asymmetry measurements in associated pixels of each of the two measurement gratings an overlay value and a process dependent value is determined, as well as a quality indicator for the overlay value and the process dependent value.

    摘要翻译： 布置成将图案从图案形成装置转移到基板上的光刻设备包括设置在基板中的两个参考光栅和在参考光栅顶部的两个测量光栅，测量光栅类似于参考光栅，并且相反地偏置在单个 相对于各个参考光栅的方向。 使用具有图像传感器的覆盖测量装置来获得两个测量光栅中的每一个中的测量点的像素数据。 测量测量点中每个像素的不对称性，并且从两个测量光栅中的每一个的相关像素中的像素不对称测量结果确定覆盖值和过程相关值，以及重叠值的质量指示符和 过程依赖值。

    Method of measurement, an inspection apparatus and a lithographic apparatus
    54.
    发明申请
    Method of measurement, an inspection apparatus and a lithographic apparatus 审中-公开
    测量方法，检查装置和光刻设备

    公开(公告)号：US20080144036A1

    公开(公告)日：2008-06-19

    申请号：US11641124

    申请日：2006-12-19

    申请人： Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Everhardus Cornelis Mos

    发明人： Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Everhardus Cornelis Mos

    IPC分类号： G01N21/47

    CPC分类号： G03F7/70633 ,  H01L22/12

    摘要： An inspection system is arranged to measure an overlay error by projecting a plurality of radiation beams, differing in wavelength and/or polarization, onto two targets. A first radiation beam is projected onto a first target and the reflected radiation A1+ is detected. The first target comprises two gratings having a bias +d with respect to each other. The first radiation beam is also projected on to a second target, which comprises two gratings having a bias −d with respect to each other, and the reflected radiation A1− is detected. A second radiation beam, having a different wavelength and/or polarization from the first radiation beam, is projected onto the first target and reflected radiation A2+ is detected and projected onto the second target and reflected radiation A2− is detected. Detected radiations A1+, A1−, A2+, and A2− is used to determine the overlay error.

    摘要翻译： 检查系统被布置成通过将不同波长和/或极化的多个辐射束投影到两个目标上来测量覆盖误差。 第一辐射束被投影到第一目标上，并且检测到反射辐射A 1 +。 第一个目标包括两个相对于彼此具有偏压+ d的光栅。 第一辐射束也被投影到第二靶上，第二靶被包括相对于彼此具有偏压-d的两个光栅，并且检测到反射的辐射A 1 - 。 具有与第一辐射束不同的波长和/或极化的第二辐射束被投影到第一目标上，并且检测并反射辐射A 2 + 2并将其投影到第二目标和反射辐射A 检测到<2> 。 检测到的辐射使用1 ，1 ，2 和A 2 - 来确定 重叠错误。

    Lithographic apparatus and device manufacturing method using overlay measurement
    57.
    发明授权
    Lithographic apparatus and device manufacturing method using overlay measurement 有权
    平版印刷设备和使用重叠测量的设备制造方法

    公开(公告)号：US07532305B2

    公开(公告)日：2009-05-12

    申请号：US11390416

    申请日：2006-03-28

    申请人： Arie Jeffrey Den Boef ,  Everhardus Cornelis Mos ,  Maurits Van Der Schaar ,  Stefan Carolus Jacobus Antonius Keij

    发明人： Arie Jeffrey Den Boef ,  Everhardus Cornelis Mos ,  Maurits Van Der Schaar ,  Stefan Carolus Jacobus Antonius Keij

    IPC分类号： G03B27/68

    CPC分类号： G03B27/42 ,  G03F7/70633

    摘要： A lithographic apparatus arranged to transfer a pattern from a patterning device onto a substrate includes a reference set of gratings provided in the substrate, the reference set including two reference gratings having line elements in a first direction and one reference grating having line elements in a second, perpendicular, direction. A measurement set of gratings is provided on top of the reference set of gratings, the measurement set comprising three measurement gratings similar to the reference gratings. Two of the measurement gratings are oppositely biased in the second direction relative to the respective reference gratings. An overlay measurement device is provided to measure asymmetry of the three gratings in the reference set and the measurement set, and to derive from the measured asymmetry the overlay in both the first and second direction.

    摘要翻译： 布置成将图案从图案形成装置转印到衬底上的光刻设备包括设置在衬底中的参考光栅组，该参考组包括在第一方向上具有线元件的两个参考光栅和在第二方向上具有线元件的一个参考光栅 ，垂直，方向。 光栅的测量组提供在参考光栅组的顶部，测量组包括与参考光栅相似的三个测量光栅。 两个测量光栅相对于各个参考光栅在第二方向上相反地偏置。 提供覆盖测量装置以测量参考组和测量组中的三个光栅的不对称性，并且从第一和第二方向上的测量的不对称性导出覆盖。

    Method and apparatus for angular-resolved spectroscopic lithography characterization
    59.
    发明申请
    Method and apparatus for angular-resolved spectroscopic lithography characterization 有权
    用于角分辨光谱光刻特征的方法和装置

    公开(公告)号：US20080043239A1

    公开(公告)日：2008-02-21

    申请号：US11504106

    申请日：2006-08-15

    申请人： Arie Jeffrey Den Boef ,  Mircea Dusa ,  Everhardus Cornelis Mos ,  Maurits Van Der Schaar ,  Stefan Carolus Jacobus Antonius Keij

    发明人： Arie Jeffrey Den Boef ,  Mircea Dusa ,  Everhardus Cornelis Mos ,  Maurits Van Der Schaar ,  Stefan Carolus Jacobus Antonius Keij

    IPC分类号： G01B11/00

    CPC分类号： G03F7/70633

    摘要： An inspection system is arranged to measure an overlay error by projecting a plurality of radiation beams, differing in wavelength and/or polarization, onto two targets. A first radiation beam is projected onto a first target and the reflected radiation A1+ is detected. The first target comprises two gratings having a bias +d with respect to each other. The first radiation beam is also projected on to a second target, which comprises two gratings having a bias −d with respect to each other, and the reflected radiation A1− is detected. A second radiation beam, having a different wavelength and/or polarization from the first radiation beam, is projected onto the first target and reflected radiation A2+ is detected and projected onto the second target and reflected radiation A2− is detected. Detected radiations A1+, A1−, A2+, and A2− is used to determine the overlay error.

    摘要翻译： 检查系统被布置成通过将不同波长和/或极化的多个辐射束投影到两个目标上来测量覆盖误差。 第一辐射束被投影到第一目标上，并且检测到反射辐射A 1 +。 第一个目标包括两个相对于彼此具有偏压+ d的光栅。 第一辐射束也被投影到第二靶上，第二靶被包括相对于彼此具有偏压-d的两个光栅，并且检测到反射的辐射A 1 - 。 具有与第一辐射束不同的波长和/或极化的第二辐射束被投影到第一目标上，并且检测并反射辐射A 2 + 2并将其投影到第二目标和反射辐射A 检测到<2> 。 检测到的辐射使用1 ，1 ，2 和A 2 - 来确定 重叠错误。

    Method and apparatus for angular-resolved spectroscopic lithography characterization
    60.
    发明申请
    Method and apparatus for angular-resolved spectroscopic lithography characterization 有权
    用于角分辨光谱光刻特征的方法和装置

    公开(公告)号：US20070291269A1

    公开(公告)日：2007-12-20

    申请号：US11455942

    申请日：2006-06-20

    申请人： Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Everhardus Cornelis Mos ,  Stefan Carolus Jacobus Antonius Keij

    发明人： Maurits Van Der Schaar ,  Arie Jeffrey Den Boef ,  Everhardus Cornelis Mos ,  Stefan Carolus Jacobus Antonius Keij

    IPC分类号： G01B11/00

    CPC分类号： G03F9/7076 ,  G03F7/70633

    摘要： An overlay target on a substrate includes two sets of gratings; the first set having a pitch P1 and the second set having a pitch P2 and each set including a grating with an orientation substantially perpendicular to the first grating of each set. When a layer of resist is to be aligned with the layer below it, the same overlay marks are provided on the upper layer and the relative positions of the overlay targets on the upper layer and the lower layer are compared by shining an overlay beam on to the overlay targets and measuring the diffraction spectrum of the reflected beam. Having two sets of overlay targets with different pitches in gratings enables the measurement of overlay errors that are greater than the pitch of either one of the overlay gratings.

    摘要翻译： 衬底上的覆盖目标包括两组光栅; 第一组具有节距P 1，第二组具有节距P 2，并且每组包括具有大致垂直于每组的第一光栅的取向的光栅。 当抗蚀剂层与其下面的层对准时，在上层提供相同的覆盖标记，并且通过将覆盖光束照射到上层和下层来比较覆盖目标在上层和下层上的相对位置 覆盖目标并测量反射光束的衍射光谱。 在光栅中具有两组具有不同间距的覆盖目标使得可以测量大于叠加光栅中的任一个的间距的重叠误差。