摘要:
A metrology tool is arranged to measure a parameter of a substrate that has been provided with a pattern in a lithographic apparatus. The metrology tool includes a base frame, a substrate table constructed and arranged to hold the substrate, a sensor constructed and arranged to measure a parameter of the substrate, a displacement system configured to displace the substrate table or the sensor with respect to the other in a first direction, a balance mass, and a bearing configured to movably support the first balance mass so as to be substantially free to translate in a direction opposite of the first direction in order to counteract a displacement of the substrate table or sensor in the first direction.
摘要:
Various options for improving throughput in an e-beam lithography apparatus are described. A slider lens moves in synchronism with the scanning motion of the electron beam.
摘要:
Various options for improving throughput in an e-beam lithography apparatus are described. A slider lens moves in synchronism with the scanning motion of the electron beam.
摘要:
A metrology tool is arranged to measure a parameter of a substrate that has been provided with a pattern in a lithographic apparatus. The metrology tool includes a base frame, a substrate table, a sensor, a displacement system, a balance mass, and a bearing. The substrate table is constructed and arranged to hold the substrate. The sensor is constructed and arranged to measure a parameter of the substrate. The displacement system is configured to displace the substrate table or the sensor with respect to the other in a first direction. The bearing is configured to movably support the first balance mass so as to be substantially free to translate in a direction opposite of the first direction in order to counteract a displacement of the substrate table or sensor in the first direction.
摘要:
Grayscale Optical Proximity Correction device features are added to a mask pattern by convoluting the device features with a two-dimensional correction kernel or two one-dimensional correction kernels to generate grayscale OPC features. The resulting pattern may be used in a projection lithography apparatus having a programmable patterning means that is adapted to generate three or more intensity levels. An iterative process of simulating an aerial image that would be produced by the pattern, comparing the simulation to the desired pattern, and adjusting the OPC features may be used to generate an optimum pattern for projection.
摘要:
An imaging apparatus having an illuminator configured to condition a beam of radiation having a wavelength equal to or shorter than 365 nm; a support structure to support a programmable patterning device, the programmable patterning device configured to pattern the beam according to a desired pattern; a substrate table configured to hold a substrate; a projection system configured to project the patterned beam onto a target portion of the substrate; a beam splitter located between the programmable patterning device and the substrate table configured to divert aside a portion of the patterned beam; and an image detector configured to analyze the portion of the patterned beam.
摘要:
A system and method are provided including different moveable lenses within a projection system that can be placed in the path of a radiation beam to change a magnification of the projection system. By changing the magnification of the projection system an area of a substrate exposed per pixel can be adjusted, and a throughput of the system optimized.
摘要:
A method of determining an overlay error in which asymmetry of a first order of a diffraction pattern is modeled as being a weighted sum of harmonics. Both the first order harmonic and higher order harmonics are non-negligible and weights for both are calculated. The weights are calculated using three or more of sets of superimposed patterns using a least mean square method.
摘要:
A metrology apparatus is configured to measure a property of a substrate. The metrology apparatus includes an illumination system configured to condition a radiation beam, an objective lens configured to project radiation onto the substrate, a detector configured to detect radiation reflected from a surface of the substrate, and an image field selecting device in the path of the reflected radiation constructed and arranged to select an area of an image field associated with the substrate. The selected area corresponds with a predetermined portion of the substrate. This arrangement may enable selection of different shapes and sizes of targets on the substrate and may enable in-die measurement of selected parameters.
摘要:
An imprint lithography apparatus is disclosed that has a first array of template holders, a second array of template holders, and a substrate table arranged to support a substrate to be imprinted, wherein the first array of template holders is arranged to hold an array of imprint templates that can be used to imprint a first array of patterns onto the substrate, and the second array of template holders is arranged hold an array of imprint templates that can be used to imprint a second array of patterns onto the substrate, the patterns imprinted by the second array being interspersed between the patterns imprinted by the first array.