公开(公告)号：US6002047A

公开(公告)日：1999-12-14

申请号：US959221

申请日：1997-10-28

Applicant: Michael Jansen ,  Claus Rehren

Inventor： Michael Jansen ,  Claus Rehren

IPC: B01J23/44 ,  B01J3/00 ,  C07B35/02 ,  C07B61/00 ,  C07C5/08 ,  C07C11/02 ,  C07C29/17 ,  C07C33/025 ,  C07C45/62 ,  C07C49/04 ,  C07C45/45

CPC classification number: C07C29/17 ,  B01J3/008 ,  C07B35/02 ,  C07C45/62 ,  Y02P20/544

Abstract: The present invention is concerned with a process for the catalytic hydrogenation of organic compounds on a catalyst of amorphous metal alloys and in a solvent, with the hydrogenation being carried out under near-critical or supercritical conditions of the solvent. The amorphous metal alloys can be produced by the shock cooling of alloy melts having eutectic solidification points. By hydrogenation at hydrogen partial pressures between 5 and 400 bar there is obtained outstanding space-time yields with high long-term stability of the catalytic activity.

Abstract translation: 本发明涉及在无定形金属合金催化剂和溶剂中催化氢化有机化合物的方法，其中氢化在溶剂的近临界或超临界条件下进行。 可以通过具有共晶凝固点的合金熔体的冲击冷却来生产非晶态金属合金。 通过在5巴和400巴之间的氢分压下进行氢化，获得了突出的时空产率，具有高的催化活性的长期稳定性。

公开(公告)号：US5964267A

公开(公告)日：1999-10-12

申请号：US811144

申请日：1997-03-03

Applicant: Dionysius Josef Poque ,  Johannes Josef Baumhofer ,  Michael Jansen ,  Hermann Stump

Inventor： Dionysius Josef Poque ,  Johannes Josef Baumhofer ,  Michael Jansen ,  Hermann Stump

IPC: B60C11/13 ,  B60C11/11 ,  B60C101/00

CPC classification number: B60C11/13 ,  B60C2011/1254 ,  Y10S152/902

Abstract: A tread configuration for a vehicle tire, including at least two adjacent circumferentially oriented rows of profiled blocks. The rows are separated from one another by respective circumferential grooves. The base of each groove extends parallel to the circumferential direction. A respective side wall on each side of the base extends radially outwardly from the base and forms side walls of profiled blocks of an adjacent one of the rows of blocks. Radially outer end portions of the side walls of the grooves are essentially oriented in the circumferential direction and have their contour divided by a plurality of axially oriented offsets.

Abstract translation: 一种用于车辆轮胎的胎面构造，其包括至少两个相邻的周向取向的成型块。 行通过相应的周向槽彼此分离。 每个槽的底部平行于圆周方向延伸。 基座的每一侧上的相应的侧壁从底座径向向外延伸并且形成相邻行之一块的成型块的侧壁。 槽的侧壁的径向外端部分基本上沿圆周方向定向，并且其轮廓被多个轴向定向的偏移区分开。

公开(公告)号：USD354468S

公开(公告)日：1995-01-17

申请号：US951102

申请日：1992-09-25

Applicant: Michael Jansen

Designer： Michael Jansen

公开(公告)号：US5276700A

公开(公告)日：1994-01-04

申请号：US849911

申请日：1992-03-12

Applicant: Michael Jansen ,  Dan Botez ,  Luke J. Mawst ,  Thomas J. Roth ,  Jane J. Yang

Inventor： Michael Jansen ,  Dan Botez ,  Luke J. Mawst ,  Thomas J. Roth ,  Jane J. Yang

IPC: H01S5/00 ,  H01S5/026 ,  H01S5/40 ,  H01S5/42 ,  H01S3/19

CPC classification number: H01S5/4031 ,  H01S5/4006 ,  H01S5/4025 ,  H01S5/4068 ,  H01S5/42

Abstract: This invention discloses a semiconductor laser incorporating a plurality of resonant optical waveguide array cells. In each of the resonant optical waveguide array cells, leaky waveguide elements are coupled together such that radiation leaked from one antiguide element is coupled with radiation propagating along another antiguide element across an interelement region. As the radiation propagates through the array it is reflected at each end of the array until it builds up enough optical gain to reach lasing threshold. Then, radiation is leaked from the sides of each array such that this radiation can impinge other resonant optical waveguide arrays and be coupled with these arrays in phase to develop a laser beam having a higher intensity than can be achieved with a single array semiconductor laser.

Abstract translation: 本发明公开了一种结合了多个谐振光波导阵列单元的半导体激光器。 在每个谐振光波导阵列单元中，泄漏的波导元件耦合在一起，使得从一个反射元件泄漏的辐射与沿着另一个反射元件穿过元件区域传播的辐射耦合。 当辐射通过阵列传播时，其在阵列的每个端部被反射，直到它建立足够的光学增益以达到激光阈值。 然后，辐射从每个阵列的侧面泄漏，使得该辐射可以撞击其他谐振光波导阵列并且与这些阵列同相耦合以形成具有比可以用单阵列半导体激光器实现的强度更高的强度的激光束。

公开(公告)号：US4896195A

公开(公告)日：1990-01-23

申请号：US168067

申请日：1988-03-14

Applicant: Michael Jansen ,  Moshe Sergant ,  Szutsun S. Ou ,  Jaroslava Z. Wilcox ,  Jane J. Yang ,  Larry R. Eaton

Inventor： Michael Jansen ,  Moshe Sergant ,  Szutsun S. Ou ,  Jaroslava Z. Wilcox ,  Jane J. Yang ,  Larry R. Eaton

IPC: H01L33/00

CPC classification number: H01L33/0045

Abstract: A semiconductor diode structure including a light-absorbing substrate, an active region, and a pair of cladding layers surrounding the active region. Lasing is inhibited by means of an inclined end facet, which reflects light down into the substrate, where it is absorbed, to provide only one pass of the spontaneously emitted light through the active region. One disclosed embodiment has a conventional end facet for the out-coupling of edge-emitted light. Another embodiment includes a surface-emitting facet formed in an opening in the substrate adjacent to the inclined facet. Yet another embodiment has two inclined facets. One inclined facet may serve to reflect light into the absorbing substrate, or both may serve to reflect light through separate surface emitting facets.

Abstract translation: 一种半导体二极管结构，包括光吸收衬底，有源区和围绕有源区的一对覆层。 激光通过倾斜端面被抑制，该倾斜端面将光线向下反射到衬底中，在其被吸收的位置，仅提供通过有源区域的自发发射的光的一次通过。 一个公开的实施例具有用于边缘发射光的外耦合的常规端面。 另一个实施例包括形成在与倾斜面相邻的衬底的开口中的表面发射小面。 又一实施例具有两个倾斜面。 一个倾斜小面可以用于将光反射到吸收衬底中，或者两者可以用于通过单独的表面发射面反射光。

公开(公告)号：US4869780A

公开(公告)日：1989-09-26

申请号：US178711

申请日：1988-04-07

Applicant: Jane J. J. Yang ,  William W. Simmons ,  Michael Jansen ,  Jaroslava Z. Wilcox ,  Moshe Sergant

Inventor： Jane J. J. Yang ,  William W. Simmons ,  Michael Jansen ,  Jaroslava Z. Wilcox ,  Moshe Sergant

IPC: H01L21/263

CPC classification number: H01L21/2633

Abstract: An ion milling method is disclosed that provides a manufacturing technique for mass producing microscopic surface features using a wide variety of media that includes semiconductors, metals, and glasses. In the preferred embodiment, vertical and 45 degree mirrors are formed simultaneously in semiconductor laser diodes in order to produce monolithic two dimensional arrays of surface emitting lasers. Standard double heterostructure semiconductor laser diodes are first grown on a wafer using metalorganic chemical vapor deposition techniques. An ion milling gun is oriented at a particular angle from the longitudinal axis of the active layer of the laser and emits a stream of atomic particles toward the lasers producing a generally two sided cut or notch that extends downward from the top surface of the semiconductor laser and traverses the active layer. The two sides of the cut consist of a vertical face that is perpendicular to the active layer and an inclined mirror surface that connects to the bottom of the vertical face and the slopes back upward to the top of the laser. Although the preferred utilization of this invention is the production of high power semiconductor laser arrays and subsequent wafer scale integration, the ion milling technique may be employed to construct a wide variety of micro-miniature radiation interfaces, reflectors, transmitters, or absorbers. Virtually any surface that requires a specifically determined configuration of uniform topography of atomic proportions may be produced.

Abstract translation: 公开了一种离子铣削方法，其提供使用包括半导体，金属和玻璃的各种介质大规模生产微观表面特征的制造技术。 在优选实施例中，在半导体激光二极管中同时形成垂直和45度反射镜，以便产生表面发射激光器的单片二维阵列。 首先使用金属有机化学气相沉积技术在晶片上生长标准双异质结半导体激光二极管。 离子铣刀从激光器的有源层的纵向轴线以特定的角度定向，并且向激光器发射原子粒子流，从而产生从半导体激光器的顶表面向下延伸的大致双面切割或凹口 并穿过活动层。 切割的两侧包括垂直于有源层的垂直面和连接到垂直面的底部并且倾斜回到激光顶部的倾斜镜面。 虽然本发明的优选利用是生产高功率半导体激光器阵列和随后的晶片级整合，但是可以采用离子铣削技术来构造各种微型微型辐射接口，反射器，发射器或吸收器。 实际上可以产生需要具有原子比例的均匀地形的具体确定构型的任何表面。

公开(公告)号：US4764935A

公开(公告)日：1988-08-16

申请号：US35108

申请日：1987-04-06

Applicant: Jaroslava Z. Wilcox ,  Michael Jansen ,  Arnold H. Silver ,  Jane J. J. Yang ,  William W. Simmons

Inventor： Jaroslava Z. Wilcox ,  Michael Jansen ,  Arnold H. Silver ,  Jane J. J. Yang ,  William W. Simmons

IPC: H01S5/062 ,  H01S5/40 ,  H01S3/19

CPC classification number: H01S5/4068 ,  H01S5/06243

Abstract: A diffraction-coupled semiconductor laser array, and a related method for its operation, the array structure having a diffraction section that is electrically controllable independently of a waveguide section having multiple laser channels. Above a critical level of injected gain in the diffraction region, and with appropriate selection of channel and diffraction region dimensions, stable operation in the in-phase supermode results, with adjacent lasers operating in phase and a single-lobed far-field distribution pattern being produced. Below the critical level of injected gain, the out-of-phase supermode or multimode operation is favored and the narrow single peak of the far-field pattern is no longer present. This mode switching can be used to rapidly modulate operation of the array without directly switching it on and off.

Abstract translation: 衍射耦合半导体激光器阵列及其操作的相关方法，该阵列结构具有独立于具有多个激光通道的波导部分可电控制的衍射部分。 在衍射区域中注入增益的临界水平以及通道和衍射区域尺寸的适当选择之后，同相超声波中的稳定运行结果是相邻的激光器同相工作，单裂纹远场分布模式是 生产。 低于注入增益的临界水平，有利于异相超模式或多模式运算，远场模式的窄单峰不再存在。 该模式切换可用于快速调制阵列的操作，而无需直接打开和关闭。