公开(公告)号：US5025451A

公开(公告)日：1991-06-18

申请号：US424424

申请日：1989-10-20

申请人： Michael Jansen ,  Moshe Sergant ,  Szutsun S. Ou ,  Jaroslava Z. Wilcox ,  Jane J. Yang ,  Larry R. Eaton

发明人： Michael Jansen ,  Moshe Sergant ,  Szutsun S. Ou ,  Jaroslava Z. Wilcox ,  Jane J. Yang ,  Larry R. Eaton

IPC分类号： G02B6/42 ,  H01S5/18 ,  H01S5/40 ,  H01S5/42

CPC分类号： H01S5/18 ,  G02B6/4249 ,  H01S5/42 ,  H01S5/4006 ,  H01S5/4031 ,  H01S5/4068 ,  H01S5/4075

摘要： A two-dimensional integrated laser array having a plurality of surface-emitting laser arrays and a plurality of waveguides for optically coupling the individual laser arrays together. Each surface-emitting laser array includes a plurality of injection lasers which are evanescently coupled together in order to emit a single beam of light. The coupling provided by the waveguides causes the surface-emitting laser arrays to operate in phase and at the same wavelength as an external master oscillator. Therefore, the surface-emitting laser arrays generate coherent beams of light, which are combined and focused by a micro-lens. The output of the micro-lens is a single, coherent high-power optical beam which is emitted perpendicular to the two-dimensional integrated laser array.

摘要翻译： 具有多个表面发射激光器阵列和用于将各个激光器阵列光学耦合在一起的多个波导的二维集成激光器阵列。 每个表面发射激光器阵列包括多个注入激光器，其消逝地耦合在一起以发射单个光束。 由波导提供的耦合导致表面发射激光器阵列以与外部主振荡器相同的波长工作。 因此，表面发射激光器阵列产生相干的光束，其由微透镜组合和聚焦。 微透镜的输出是垂直于二维集成激光器阵列发射的单一相干高功率光束。

公开(公告)号：US4896195A

公开(公告)日：1990-01-23

申请号：US168067

申请日：1988-03-14

申请人： Michael Jansen ,  Moshe Sergant ,  Szutsun S. Ou ,  Jaroslava Z. Wilcox ,  Jane J. Yang ,  Larry R. Eaton

发明人： Michael Jansen ,  Moshe Sergant ,  Szutsun S. Ou ,  Jaroslava Z. Wilcox ,  Jane J. Yang ,  Larry R. Eaton

IPC分类号： H01L33/00

CPC分类号： H01L33/0045

摘要： A semiconductor diode structure including a light-absorbing substrate, an active region, and a pair of cladding layers surrounding the active region. Lasing is inhibited by means of an inclined end facet, which reflects light down into the substrate, where it is absorbed, to provide only one pass of the spontaneously emitted light through the active region. One disclosed embodiment has a conventional end facet for the out-coupling of edge-emitted light. Another embodiment includes a surface-emitting facet formed in an opening in the substrate adjacent to the inclined facet. Yet another embodiment has two inclined facets. One inclined facet may serve to reflect light into the absorbing substrate, or both may serve to reflect light through separate surface emitting facets.

摘要翻译： 一种半导体二极管结构，包括光吸收衬底，有源区和围绕有源区的一对覆层。 激光通过倾斜端面被抑制，该倾斜端面将光线向下反射到衬底中，在其被吸收的位置，仅提供通过有源区域的自发发射的光的一次通过。 一个公开的实施例具有用于边缘发射光的外耦合的常规端面。 另一个实施例包括形成在与倾斜面相邻的衬底的开口中的表面发射小面。 又一实施例具有两个倾斜面。 一个倾斜小面可以用于将光反射到吸收衬底中，或者两者可以用于通过单独的表面发射面反射光。

公开(公告)号：US4869780A

公开(公告)日：1989-09-26

申请号：US178711

申请日：1988-04-07

申请人： Jane J. J. Yang ,  William W. Simmons ,  Michael Jansen ,  Jaroslava Z. Wilcox ,  Moshe Sergant

发明人： Jane J. J. Yang ,  William W. Simmons ,  Michael Jansen ,  Jaroslava Z. Wilcox ,  Moshe Sergant

IPC分类号： H01L21/263

CPC分类号： H01L21/2633

摘要： An ion milling method is disclosed that provides a manufacturing technique for mass producing microscopic surface features using a wide variety of media that includes semiconductors, metals, and glasses. In the preferred embodiment, vertical and 45 degree mirrors are formed simultaneously in semiconductor laser diodes in order to produce monolithic two dimensional arrays of surface emitting lasers. Standard double heterostructure semiconductor laser diodes are first grown on a wafer using metalorganic chemical vapor deposition techniques. An ion milling gun is oriented at a particular angle from the longitudinal axis of the active layer of the laser and emits a stream of atomic particles toward the lasers producing a generally two sided cut or notch that extends downward from the top surface of the semiconductor laser and traverses the active layer. The two sides of the cut consist of a vertical face that is perpendicular to the active layer and an inclined mirror surface that connects to the bottom of the vertical face and the slopes back upward to the top of the laser. Although the preferred utilization of this invention is the production of high power semiconductor laser arrays and subsequent wafer scale integration, the ion milling technique may be employed to construct a wide variety of micro-miniature radiation interfaces, reflectors, transmitters, or absorbers. Virtually any surface that requires a specifically determined configuration of uniform topography of atomic proportions may be produced.

摘要翻译： 公开了一种离子铣削方法，其提供使用包括半导体，金属和玻璃的各种介质大规模生产微观表面特征的制造技术。 在优选实施例中，在半导体激光二极管中同时形成垂直和45度反射镜，以便产生表面发射激光器的单片二维阵列。 首先使用金属有机化学气相沉积技术在晶片上生长标准双异质结半导体激光二极管。 离子铣刀从激光器的有源层的纵向轴线以特定的角度定向，并且向激光器发射原子粒子流，从而产生从半导体激光器的顶表面向下延伸的大致双面切割或凹口 并穿过活动层。 切割的两侧包括垂直于有源层的垂直面和连接到垂直面的底部并且倾斜回到激光顶部的倾斜镜面。 虽然本发明的优选利用是生产高功率半导体激光器阵列和随后的晶片级整合，但是可以采用离子铣削技术来构造各种微型微型辐射接口，反射器，发射器或吸收器。 实际上可以产生需要具有原子比例的均匀地形的具体确定构型的任何表面。

公开(公告)号：US4868839A

公开(公告)日：1989-09-19

申请号：US168066

申请日：1988-03-14

申请人： William W. Simmons ,  Michael Jansen ,  Jaroslava Z. Wilcox ,  Jane J. Yang

发明人： William W. Simmons ,  Michael Jansen ,  Jaroslava Z. Wilcox ,  Jane J. Yang

IPC分类号： H01S5/062 ,  H01S5/10 ,  H01S5/40

CPC分类号： H01S5/1082 ,  H01S5/4068 ,  H01S5/06243 ,  H01S5/4062 ,  H01S5/4075 ,  H01S5/4081

摘要： An array of semiconductor lasers formed in a single substrate and having parallel waveguides that terminate in a wide diffraction region fabricated with the array structure. The diffraction region has a curved reflective surface selected to achieve a desired degree of coupling among the elements of the array, and to enhance and stabilize a preferred lateral mode of oscillation.

摘要翻译： 半导体激光器阵列形成在单个衬底中并具有平行的波导，其终止于用阵列结构制造的宽衍射区域。 衍射区域具有弯曲的反射表面，其被选择以在阵列的元件之间实现期望的耦合程度，并且增强和稳定优选的侧向振荡模式。

公开(公告)号：US4985897A

公开(公告)日：1991-01-15

申请号：US254905

申请日：1988-10-07

申请人： Dan Botez ,  Michael Jansen ,  Luke J. Mawst ,  Gary L. Peterson ,  William W. Simmons ,  Jaroslava Z. Wilcox ,  Jane J. J. Yang

发明人： Dan Botez ,  Michael Jansen ,  Luke J. Mawst ,  Gary L. Peterson ,  William W. Simmons ,  Jaroslava Z. Wilcox ,  Jane J. J. Yang

IPC分类号： H01S3/23 ,  H01S3/06 ,  H01S5/00 ,  H01S5/14 ,  H01S5/40

CPC分类号： H01S5/4062 ,  H01S5/148 ,  H01S5/4068

摘要： A semiconductor laser array with features providing good beam quality at high powers, first by employing a laterally unguided diffraction region in which light from a set of waveguides is re-imaged in accordance with the Talbot effect and two arrays of waveguides may be used to provide a spatial filtering effect to select a desired array mode. This provides a laser array with increased power per unit solid angle, and with additional advantages of ability to scale the device up to larger arrays, ability to control the electrical excitation of the device for better optimization, and improved modal discrimination. A second aspect of the invention is the use of a resonance condition in an antiguide array, to produce a uniform near-field intensity pattern and improved coupling and device coherence. This resonance structure may be combined with the Talbot-effect structure to suppress the out-of-phase mode, or the out-of-phase mode may be suppressed by other means, such as by introducing interelement radiation losses or absorption losses in the antiguide array.

公开(公告)号：US4764935A

公开(公告)日：1988-08-16

申请号：US35108

申请日：1987-04-06

申请人： Jaroslava Z. Wilcox ,  Michael Jansen ,  Arnold H. Silver ,  Jane J. J. Yang ,  William W. Simmons

发明人： Jaroslava Z. Wilcox ,  Michael Jansen ,  Arnold H. Silver ,  Jane J. J. Yang ,  William W. Simmons

IPC分类号： H01S5/062 ,  H01S5/40 ,  H01S3/19

CPC分类号： H01S5/4068 ,  H01S5/06243

摘要： A diffraction-coupled semiconductor laser array, and a related method for its operation, the array structure having a diffraction section that is electrically controllable independently of a waveguide section having multiple laser channels. Above a critical level of injected gain in the diffraction region, and with appropriate selection of channel and diffraction region dimensions, stable operation in the in-phase supermode results, with adjacent lasers operating in phase and a single-lobed far-field distribution pattern being produced. Below the critical level of injected gain, the out-of-phase supermode or multimode operation is favored and the narrow single peak of the far-field pattern is no longer present. This mode switching can be used to rapidly modulate operation of the array without directly switching it on and off.

摘要翻译： 衍射耦合半导体激光器阵列及其操作的相关方法，该阵列结构具有独立于具有多个激光通道的波导部分可电控制的衍射部分。 在衍射区域中注入增益的临界水平以及通道和衍射区域尺寸的适当选择之后，同相超声波中的稳定运行结果是相邻的激光器同相工作，单裂纹远场分布模式是 生产。 低于注入增益的临界水平，有利于异相超模式或多模式运算，远场模式的窄单峰不再存在。 该模式切换可用于快速调制阵列的操作，而无需直接打开和关闭。

公开(公告)号：US5894090A

公开(公告)日：1999-04-13

申请号：US657685

申请日：1996-05-31

申请人： Tony K. Tang ,  William J. Kaiser ,  Randall K. Bartman ,  Jaroslava Z. Wilcox ,  Roman C. Gutierrez ,  Robert J. Calvet

发明人： Tony K. Tang ,  William J. Kaiser ,  Randall K. Bartman ,  Jaroslava Z. Wilcox ,  Roman C. Gutierrez ,  Robert J. Calvet

IPC分类号： G01C19/5719 ,  G01P15/125 ,  G01P15/14 ,  G01P15/18 ,  G01C19/00 ,  G01P9/00

CPC分类号： G01C19/5719 ,  G01P15/125 ,  G01P15/14 ,  G01P15/18 ,  G01P2015/084 ,  G01P2015/0842

摘要： When embodied in a microgyroscope, the invention is comprised of a silicon, four-leaf clover structure with a post attached to the center. The whole structure is suspended by four silicon cantilevers or springs. The device is electrostatically actuated and capacitively detects Coriolis induced motions of the leaves of the leaf clover structure. In the case where the post is not symmetric with the plane of the clover leaves, the device can is usable as an accelerometer. If the post is provided in the shape of a dumb bell or an asymmetric post, the center of gravity is moved out of the plane of clover leaf structure and a hybrid device is provided. When the clover leaf structure is used without a center mass, it performs as a high Q resonator usable as a sensor of any physical phenomena which can be coupled to the resonant performance.

摘要翻译： 当体现在微型显微镜中时，本发明由具有附接到中心的柱的硅四叶三叶草结构组成。 整个结构由四个硅悬臂或弹簧悬挂。 该装置被静电驱动并电容地检测科里奥利诱导叶三叶草结构叶片的运动。 在柱子与三叶草叶的平面不对称的情况下，装置可以用作加速度计。 如果柱子设置为哑铃或不对称柱的形状，则将重心移出三叶草叶结构的平面，并提供混合装置。 当没有中心质量的情况下使用三叶草叶结构时，它可以作为高Q谐振器执行，作为可以耦合到谐振性能的任何物理现象的传感器。

公开(公告)号：US06452177B1

公开(公告)日：2002-09-17

申请号：US09390547

申请日：1999-09-03

申请人： Jason E. Feldman ,  Thomas George ,  Jaroslava Z. Wilcox

发明人： Jason E. Feldman ,  Thomas George ,  Jaroslava Z. Wilcox

IPC分类号： H01J37256

CPC分类号： H01J37/301 ,  G01N23/225 ,  H01J37/256

摘要： The present invention comprises an apparatus for performing in-situ elemental analyses of surfaces. The invention comprises an atmospheric electron x-ray spectrometer with an electron column which generates, accelerates, and focuses electrons in a column which is isolated from ambient pressure by a:thin, electron transparent membrane. After passing through the membrane, the electrons impinge on the sample in atmosphere to generate characteristic x-rays. An x-ray detector, shaping amplifier, and multi-channel analyzer are used for x-ray detection and signal analysis. By comparing the resultant data to known x-ray spectral signatures, the elemental composition of the surface can be determined.

摘要翻译： 本发明包括用于进行表面的原位元素分析的装置。 本发明包括具有电子柱的大气电子x射线光谱仪，其通过薄的电子透明膜产生，加速并聚焦在与环境压力隔离的柱中的电子。 在通过膜之后，电子在大气中撞击样品以产生特征X射线。 X射线检测器，整形放大器和多通道分析仪用于X射线检测和信号分析。 通过将得到的数据与已知的x射线光谱特征进行比较，可以确定表面的元素组成。