公开(公告)号：US09935264B2

公开(公告)日：2018-04-03

申请号：US14677571

申请日：2015-04-02

Applicant: Micron Technology, Inc.

Inventor： Timothy A. Quick ,  Eugene P. Marsh ,  Stefan Uhlenbrock ,  Chet E. Carter ,  Scott E. Sills

IPC: H01L45/00

CPC classification number: H01L45/085 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/1608 ,  H01L45/1616

Abstract: Memory cells are disclosed, which cells include a cell material and an ion-source material over the cell material. A discontinuous interfacial material is included between the cell material and the ion-source material. Also disclosed are fabrication methods and semiconductor devices including the disclosed memory cells.

公开(公告)号：US20170324034A1

公开(公告)日：2017-11-09

申请号：US15661351

申请日：2017-07-27

Applicant: Micron Technology, Inc.

Inventor： Eugene P. Marsh ,  Jun Liu

IPC: H01L45/00

CPC classification number: H01L45/085 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/1246 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/14 ,  H01L45/143 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16 ,  H01L45/1683

Abstract: Resistive memory having confined filament formation is described herein. One or more method embodiments include forming an opening in a stack having a silicon material and an oxide material on the silicon material, and forming an oxide material in the opening adjacent the silicon material, wherein the oxide material formed in the opening confines filament formation in the resistive memory cell to an area enclosed by the oxide material formed in the opening.

公开(公告)号：US09269900B2

公开(公告)日：2016-02-23

申请号：US14313850

申请日：2014-06-24

Applicant: Micron Technology, Inc.

Inventor： Eugene P. Marsh ,  Timothy A. Quick ,  Stefan Uhlenbrock

IPC: H01L45/00 ,  C23C16/28 ,  C23C16/30 ,  C23C16/455

CPC classification number: H01L45/144 ,  C23C16/28 ,  C23C16/305 ,  C23C16/45523 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1616 ,  H01L45/1683

Abstract: A method of forming a phase change material which having germanium and tellurium therein includes depositing a germanium-containing material over a substrate. Such material includes elemental-form germanium. A gaseous tellurium-comprising precursor is flowed to the germanium-comprising material and tellurium is removed from the gaseous precursor to react with the elemental-form germanium in the germanium-comprising material to form a germanium and tellurium-comprising compound of a phase change material over the substrate. Other implementations are disclosed.

Abstract translation: 形成其中具有锗和碲的相变材料的方法包括在基底上沉积含锗材料。 这种材料包括元素形式的锗。 将含气态碲前驱体流入含锗材料，并从气态前驱体中除去碲以与含锗材料中的元素形式的锗反应，形成含锗和碲化合物的相变材料 在基板上。 公开了其他实现。

公开(公告)号：US20150214477A1

公开(公告)日：2015-07-30

申请号：US14677571

申请日：2015-04-02

Applicant: Micron Technology, Inc.

Inventor： Timothy A. Quick ,  Eugene P. Marsh ,  Stefan Uhlenbrock ,  Chet E. Carter ,  Scott E. Sills

IPC: H01L45/00

CPC classification number: H01L45/085 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/1608 ,  H01L45/1616

Abstract: Memory cells are disclosed, which cells include a cell material and an ion-source material over the cell material. A discontinuous interfacial material is included between the cell material and the ion-source material. Also disclosed are fabrication methods and semiconductor devices including the disclosed memory cells.

Abstract translation: 公开了存储器单元，其中电池包括细胞材料和细胞材料上的离子源材料。 细胞材料和离子源材料之间包含不连续的界面材料。 还公开了包括所公开的存储单元的制造方法和半导体器件。

公开(公告)号：US09023711B2

公开(公告)日：2015-05-05

申请号：US14277507

申请日：2014-05-14

Applicant: Micron Technology, Inc.

Inventor： Eugene P. Marsh

IPC: H01L21/20 ,  H01L21/768 ,  C23C16/04 ,  C23C16/18 ,  H01L21/285 ,  H01L23/522 ,  H01L27/108 ,  H01L49/02

CPC classification number: H01L21/7687 ,  C23C16/04 ,  C23C16/18 ,  H01L21/2855 ,  H01L23/5223 ,  H01L27/10852 ,  H01L28/65 ,  H01L28/91 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

Abstract: A method of forming a conductive material comprises forming at least one opening extending through an organic material and an insulative material underlying the organic material to expose at least a portion of a substrate and a conductive contact in the substrate. The method further comprises lining exposed surfaces of the insulative material, the conductive contact, and the at least a portion of the substrate in the at least one opening with a conductive material without forming the conductive material on the organic material.

Abstract translation: 形成导电材料的方法包括形成延伸穿过有机材料的至少一个开口和在有机材料下面的绝缘材料，以暴露衬底中的至少一部分衬底和导电接触。 该方法还包括用导电材料将绝缘材料，导电接触件和至少一个开口中的至少一部分衬底的暴露表面衬在有机材料上而不形成导电材料。

公开(公告)号：US20130189492A1

公开(公告)日：2013-07-25

申请号：US13784353

申请日：2013-03-04

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  Eugene P. Marsh

IPC: B81B1/00 ,  B81C1/00

CPC classification number: B81B1/00 ,  B81C1/00015 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C08L53/00 ,  G03F7/0002 ,  Y10S438/947 ,  Y10S977/888 ,  Y10S977/895 ,  Y10S977/90 ,  C08L2666/02

Abstract: Methods for fabricating sub-lithographic, nanoscale linear microchannel arrays over surfaces without defined features utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Embodiments of the methods use a multi-layer induced ordering approach to align lamellar films to an underlying base film within trenches, and localized heating to anneal the lamellar-phase block copolymer film overlying the trenches and outwardly over the remaining surface.

Abstract translation: 提供了利用自组装嵌段共聚物在表面上制备亚光刻纳米线性微通道阵列而不具有限定特征的方法，以及由这些方法形成的膜和器件。 该方法的实施方案使用多层诱导排序方法将层状膜与沟槽内的底层膜对准，并进行局部加热以使覆盖在沟槽上的层状相嵌段共聚物膜退出，并在剩余表面上向外退火。