Tungsten sputtering target and method of manufacturing the target
    51.
    发明申请
    Tungsten sputtering target and method of manufacturing the target 有权
    钨溅射靶和制造目标的方法

    公开(公告)号:US20050029094A1

    公开(公告)日:2005-02-10

    申请号:US10363257

    申请日:2001-09-03

    IPC分类号: C23C14/34 C23C14/00

    CPC分类号: C23C14/3414

    摘要: The tungsten sputtering target of the present invention is characterized in that a half band width of a peak corresponding to a crystal plane (110) of the target is 0.35 or less when a surface of the target to be sputtered is analyzed by X-ray diffraction. Further, the method of manufacturing the tungsten sputtering target of the present invention is characterized by comprising the steps of: pressing a high purity tungsten powder to form a pressed compact; sintering the pressed compact to form a sintered body; working the sintered body to obtain a shape of a target; subjecting the target to a grinding work of at least one of rotary grinding and polishing; and subjecting the target to a finishing work of at least one of etching and reverse sputtering. According to the above structure, there can be provided a tungsten sputtering target and method of manufacturing the target capable of improving the in-plain uniformity in thickness of the W thin film formed on a substrate, and capable of effectively reducing the generation of the particles.

    摘要翻译: 本发明的钨溅射靶的特征在于,当通过X射线衍射分析待溅射靶的表面时,对应于靶的晶面(110)的峰的半带宽为0.35以下 。 此外,本发明的钨溅射靶的制造方法的特征在于包括以下步骤:将高纯度钨粉按压以形成压制成型体; 烧结压制成型体的烧结体; 加工烧结体以获得靶的形状; 使目标进行旋转研磨和抛光中的至少一个的研磨工作; 并对靶进行蚀刻和反溅镀中的至少一种的精加工。 根据上述结构,可以提供一种钨溅射靶和能够提高形成在基板上的W薄膜的厚度均匀性均匀化的靶的方法,能够有效地减少粒子的产生 。

    Sputtering target, A1 interconnection film, and electronic component
    52.
    发明授权
    Sputtering target, A1 interconnection film, and electronic component 有权
    溅射靶,A1互连膜和电子元件

    公开(公告)号:US06736947B1

    公开(公告)日:2004-05-18

    申请号:US09582284

    申请日:2000-06-23

    IPC分类号: C23C1432

    摘要: A sputtering target consists essentially of 0.1 to 50% by weight of at least one kind of element that forms an intermetallic compound with Al, and the balance of Al. The element that forms an intermetallic compound with Al is uniformly dispersed in the target texture, and in a mapping of EPMA analysis, a portion of which count number of detection sensitivity of the element is 22 or more is less than 60% by area ratio in a measurement area of 20×20 &mgr;m. According to such a sputtering target, even when a sputtering method such as long throw sputtering or reflow sputtering is applied, giant dusts or large concavities can be suppressed in occurrence.

    摘要翻译: 溅射靶基本上由0.1〜50重量%的与Al形成金属间化合物的至少一种元素,余量为Al。 与Al形成金属间化合物的元素在目标结构中均匀分散,在EPMA分析的映射中,元素的检测灵敏度的数量为22以上的部分的面积比例小于60% 测量面积为20x20 mum。 根据这样的溅射靶,即使在采用溅射溅射或回流溅射等溅射法的情况下,也可以抑制巨大的尘埃或大的凹坑。

    Ultrasonic sensor with temperature compensation capacitor
    53.
    发明授权
    Ultrasonic sensor with temperature compensation capacitor 失效
    带温度补偿电容器的超声波传感器

    公开(公告)号:US5987992A

    公开(公告)日:1999-11-23

    申请号:US6286

    申请日:1998-01-13

    摘要: An ultrasonic sensor has a built-in temperature compensation capacitor housed in a casing and facilitates an inside-the-casing lead-wire bonding connection process and a connection verifying process while increasing reliability. The ultrasonic sensor is provided with a piezoelectric vibration element and a capacitor for temperature compensation capacitor both housed in a casing. The temperature compensation capacitor includes a pair of electrodes located on one common surface of a dielectric body thus allowing the ultrasonic sensor to be electrically connected to lead wires on the one common surface.

    摘要翻译: 超声波传感器具有内置的温度补偿电容器,其容纳在壳体中,并且在增加可靠性的同时便于壳内引线接合连接过程和连接验证过程。 超声波传感器设置有压电振动元件和用于温度补偿电容器的电容器,两者都容纳在壳体中。 温度补偿电容器包括位于电介质体的一个公共表面上的一对电极,从而允许超声波传感器电连接到一个公共表面上的引线。

    Circuit for controlling access to a common memory based on priority
    54.
    发明授权
    Circuit for controlling access to a common memory based on priority 失效
    基于优先级控制对公用存储器的访问的电路

    公开(公告)号:US5809278A

    公开(公告)日:1998-09-15

    申请号:US363528

    申请日:1994-12-23

    IPC分类号: G06F12/00 G06F13/18

    CPC分类号: G06F13/18

    摘要: An access control apparatus comprises a memory accessed by a plurality of devices, a circuit for giving priority levels to the requests of these devices in access to the memory, a circuit for selecting one from these access requests according to the priority levels, and a control circuit for allowing a device not selected to access the memory in preference to the other ones, after a specified time has elapsed since the access was started. Use of the control circuit assures efficient access for a low-priority access request.

    摘要翻译: 访问控制装置包括由多个设备访问的存储器,用于对这些设备访问存储器的请求给出优先级的电路,用于根据优先级从这些访问请求中选择一个的电路,以及控制 电路,用于允许未被选择的设备优先于其他设备,在访问启动后经过指定的时间后才能访问存储器。 控制电路的使用保证了低优先级访问请求的有效访问。

    Method of manufacturing an electrolytic double-layer capacitor
    56.
    发明授权
    Method of manufacturing an electrolytic double-layer capacitor 失效
    电解双层电容器的制造方法

    公开(公告)号:US4683639A

    公开(公告)日:1987-08-04

    申请号:US860536

    申请日:1986-05-07

    摘要: A method of manufacturing an electrolytic double-layer capacitor comprises steps of forming a laminated intermediate member in which an insulating gasket defines a central space containing a carbonaceous compact having a recess portion; and the insulating gasket is interposed between a separator, having a region provided with no liquid column of an electrolytic solution in a position corresponding to the recess portion, and a conductive sheet; and dripping the electrolytic solution from above the above mentioned region of the separator and then deforming the conductive sheet by negative pressure so as to cause the electrolytic solution to impregnate the compact.

    摘要翻译: 一种制造电解双层电容器的方法包括以下步骤:形成层压中间构件,其中绝缘衬垫限定包含具有凹部的碳质压块的中心空间; 并且所述绝缘垫片介于具有在与所述凹部相对应的位置处不具有电解液的液柱的区域的隔膜与导电片之间; 从隔膜的上述区域上方滴下电解液,然后通过负压使导电片变形,使电解液浸渍。

    Apparatus for blood treatment by pressing blood into treating material
and then drawing it out
    58.
    发明授权
    Apparatus for blood treatment by pressing blood into treating material and then drawing it out 失效
    用于通过将血液压制成处理材料然后将其拉出来进行血液处理的装置

    公开(公告)号:US4565626A

    公开(公告)日:1986-01-21

    申请号:US557227

    申请日:1983-11-30

    IPC分类号: A61M1/34 A61M39/22

    摘要: An apparatus for blood treatment has a housing having a blood inlet for introducing the blood to be treated and a blood outlet for exhausting the treated blood, at least one blood channel within the housing and extending from the inlet to the outlet and being constituted by a plasma-separating membrane capable of allowing the plasma component of blood to permeate therethrough while preventing the blood cells from penetrating therethrough. A blood treating material is packed in the space within the housing around the blood channel. A pump is connected to the inlet for pumping blood into the inlet. A pressure varying mechanism operatively associated with the housing imposes from outside the housing on the space within the housing pressure changes for alternately changing the direction of the pressure difference between the inside of the blood channel and the blood treating material-containing space, so that the plasma component of the blood flow in the blood channel is caused to permeate through the plasma-separating membrane toward the blood treating material to bring the plasma into contact with the blood treating material, and the plasma is thereafter caused to be returned to the blood channel through the plasma-separating membrane.

    摘要翻译: 用于血液处理的装置具有壳体,其具有用于引入待处理血液的血液入口和用于排出经处理的血液的血液出口,壳体内的至少一个血液通道,并且从入口延伸到出口,并由 能够使血液的血浆成分透过的血浆分离膜,同时防止血细胞穿透。 血液处理材料被包装在围绕血液通道的壳体内的空间中。 泵连接到入口以将血液泵入入口。 与壳体可操作地相关联的压力变化机构从壳体外部施加在壳体内的空间中的压力变化,以交替地改变血液通道内部和含血液处理材料的空间之间的压力差的方向,使得 导致血液通道中的血流的血浆成分通过血浆分离膜向血液处理材料渗透,使血浆与血液处理材料接触,然后使血浆返回到血液通道 通过等离子体分离膜。

    Lock stitching and over-lock stitching sewing machine
    59.
    发明授权
    Lock stitching and over-lock stitching sewing machine 失效
    锁缝和超锁缝纫缝纫机

    公开(公告)号:US4343250A

    公开(公告)日:1982-08-10

    申请号:US210761

    申请日:1980-11-26

    摘要: A lock stitching and overlock stitching machine has a primary driving means, a lock stitching device including a drive shaft, an overlock stitching device including a separate drive shaft and being spaced apart from the lock stitching device, the drive shafts of respective stitching devices being coupled to the primary driving means by a clutch means which is operable to rotate the drive shaft of the lock-stitching device in one direction relative to the user and the drive shaft of the overlock-stitching device in an opposite direction relative to the user.

    摘要翻译: 锁缝拼接机具有主要驱动装置,包括驱动轴的锁定缝合装置,包括单独的驱动轴并与锁定装置隔开的包缝装置,各个缝合装置的驱动轴被联接 通过离合器装置连接到主驱动装置,所述离合器装置可操作以相对于使用者在一个方向上相对于使用者旋转锁定装置的驱动轴,并且相对于使用者在相反的方向上旋转锁定装订装置的驱动轴。

    Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same
    60.
    再颁专利
    Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same 有权
    薄膜互连线,用于形成布线膜的溅射靶和使用其的电子部件

    公开(公告)号:USRE45481E1

    公开(公告)日:2015-04-21

    申请号:US11386117

    申请日:2006-03-22

    IPC分类号: H01L21/20 C22C21/00

    CPC分类号: C22C21/00

    摘要: An interconnector line of thin film comprising 0.001 to 30 at % of at least one kind of a first element capable of constituting an intermetallic compound of aluminum and/or having a higher standard electrode potential than aluminum, for example, at least one kind of the first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Th, Sr, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Co, Ni, Pd, Ir, Pt, Cu, Ag, Au, Cd, Si, Pb and B; and one kind of a second element selected from C, O, N and H in a proportion of 0.01 at ppm to 50 at % of the first element, with the balance comprising substantially Al. In addition to having low resistance, such an Al interconnector line of thin film can prevent the occurrence of hillocks and the electrochemical reaction with an ITO electrode. The interconnector line of thin film can be obtained by sputtering in a dust-free manner by using a sputter target having a similar composition.

    摘要翻译: 包含0.001〜30原子%的至少一种能够构成铝的金属间化合物和/或具有比铝更高的标准电极电位的第一元素的互连线,例如至少一种 选自Y,Sc,La,Ce,Nd,Sm,Gd,Tb,Dy,Er,Th,Sr,Ti,Zr,V,Nb,Ta,Cr,Mo,W,Mn,Tc,Re, Fe,Co,Ni,Pd,Ir,Pt,Cu,Ag,Au,Cd,Si,Pb和B; 和一种选自C,O,N和H的第二元素,其比例为0.01〜100原子%的比例,余量基本上为Al。 除了具有低电阻之外,这种薄膜的Al互连线可以防止发生小丘和与ITO电极的电化学反应。 可以通过使用具有相似组成的溅射靶以无尘的方式溅射来获得薄膜的互连线。