摘要:
The tungsten sputtering target of the present invention is characterized in that a half band width of a peak corresponding to a crystal plane (110) of the target is 0.35 or less when a surface of the target to be sputtered is analyzed by X-ray diffraction. Further, the method of manufacturing the tungsten sputtering target of the present invention is characterized by comprising the steps of: pressing a high purity tungsten powder to form a pressed compact; sintering the pressed compact to form a sintered body; working the sintered body to obtain a shape of a target; subjecting the target to a grinding work of at least one of rotary grinding and polishing; and subjecting the target to a finishing work of at least one of etching and reverse sputtering. According to the above structure, there can be provided a tungsten sputtering target and method of manufacturing the target capable of improving the in-plain uniformity in thickness of the W thin film formed on a substrate, and capable of effectively reducing the generation of the particles.
摘要:
A sputtering target consists essentially of 0.1 to 50% by weight of at least one kind of element that forms an intermetallic compound with Al, and the balance of Al. The element that forms an intermetallic compound with Al is uniformly dispersed in the target texture, and in a mapping of EPMA analysis, a portion of which count number of detection sensitivity of the element is 22 or more is less than 60% by area ratio in a measurement area of 20×20 &mgr;m. According to such a sputtering target, even when a sputtering method such as long throw sputtering or reflow sputtering is applied, giant dusts or large concavities can be suppressed in occurrence.
摘要:
An ultrasonic sensor has a built-in temperature compensation capacitor housed in a casing and facilitates an inside-the-casing lead-wire bonding connection process and a connection verifying process while increasing reliability. The ultrasonic sensor is provided with a piezoelectric vibration element and a capacitor for temperature compensation capacitor both housed in a casing. The temperature compensation capacitor includes a pair of electrodes located on one common surface of a dielectric body thus allowing the ultrasonic sensor to be electrically connected to lead wires on the one common surface.
摘要:
An access control apparatus comprises a memory accessed by a plurality of devices, a circuit for giving priority levels to the requests of these devices in access to the memory, a circuit for selecting one from these access requests according to the priority levels, and a control circuit for allowing a device not selected to access the memory in preference to the other ones, after a specified time has elapsed since the access was started. Use of the control circuit assures efficient access for a low-priority access request.
摘要:
An electric double-layer capacitor comprises a gasket encircling a pair of polarizable electrodes provided on opposite sides of a separator, and a pair of collectors provided on outer sides of the polarizable electrodes and sealed to the gasket. The gasket is formed of a base of vulcanized rubber and resin layers obtained by fusion-welding polyolefin resin on both surfaces of the base, and the collectors are heat-sealed to the gasket.
摘要:
A method of manufacturing an electrolytic double-layer capacitor comprises steps of forming a laminated intermediate member in which an insulating gasket defines a central space containing a carbonaceous compact having a recess portion; and the insulating gasket is interposed between a separator, having a region provided with no liquid column of an electrolytic solution in a position corresponding to the recess portion, and a conductive sheet; and dripping the electrolytic solution from above the above mentioned region of the separator and then deforming the conductive sheet by negative pressure so as to cause the electrolytic solution to impregnate the compact.
摘要:
An electric double layer capacitor includes an insulative gasket for receiving a plurality of double layer capacitive elements. A common electrode is provided on each end of the gasket to connect the capacitive elements all in series, all in parallel, or in some combination of serial and parallel.
摘要:
An apparatus for blood treatment has a housing having a blood inlet for introducing the blood to be treated and a blood outlet for exhausting the treated blood, at least one blood channel within the housing and extending from the inlet to the outlet and being constituted by a plasma-separating membrane capable of allowing the plasma component of blood to permeate therethrough while preventing the blood cells from penetrating therethrough. A blood treating material is packed in the space within the housing around the blood channel. A pump is connected to the inlet for pumping blood into the inlet. A pressure varying mechanism operatively associated with the housing imposes from outside the housing on the space within the housing pressure changes for alternately changing the direction of the pressure difference between the inside of the blood channel and the blood treating material-containing space, so that the plasma component of the blood flow in the blood channel is caused to permeate through the plasma-separating membrane toward the blood treating material to bring the plasma into contact with the blood treating material, and the plasma is thereafter caused to be returned to the blood channel through the plasma-separating membrane.
摘要:
A lock stitching and overlock stitching machine has a primary driving means, a lock stitching device including a drive shaft, an overlock stitching device including a separate drive shaft and being spaced apart from the lock stitching device, the drive shafts of respective stitching devices being coupled to the primary driving means by a clutch means which is operable to rotate the drive shaft of the lock-stitching device in one direction relative to the user and the drive shaft of the overlock-stitching device in an opposite direction relative to the user.
摘要:
An interconnector line of thin film comprising 0.001 to 30 at % of at least one kind of a first element capable of constituting an intermetallic compound of aluminum and/or having a higher standard electrode potential than aluminum, for example, at least one kind of the first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Th, Sr, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Co, Ni, Pd, Ir, Pt, Cu, Ag, Au, Cd, Si, Pb and B; and one kind of a second element selected from C, O, N and H in a proportion of 0.01 at ppm to 50 at % of the first element, with the balance comprising substantially Al. In addition to having low resistance, such an Al interconnector line of thin film can prevent the occurrence of hillocks and the electrochemical reaction with an ITO electrode. The interconnector line of thin film can be obtained by sputtering in a dust-free manner by using a sputter target having a similar composition.