Command/address channel error detection

    公开(公告)号:US11361839B2

    公开(公告)日:2022-06-14

    申请号:US17049282

    申请日:2019-03-20

    Applicant: Rambus Inc.

    Abstract: A memory component and a controller communicate commands and data with each other The commands to activate and then access data, and the data itself, are all communicated between a controller and the memory component at different times. The controller and memory component each calculate a respective error detecting code (EDC) values on the activate command information (e.g., bank address and row address) and store them indexed by the bank address. When the memory component is accessed, retrieved EDC values are combined with EDC values calculated from the access command information, and the data itself. The memory component transmits its combined EDC value to the controller for checking.

    Memory controller and method of data bus inversion using an error detection correction code

    公开(公告)号:US11349496B2

    公开(公告)日:2022-05-31

    申请号:US17321060

    申请日:2021-05-14

    Applicant: Rambus Inc.

    Abstract: Memory controllers, devices and associated methods are disclosed. In one embodiment, a memory controller includes write circuitry to transmit write data to a memory device, the write circuitry includes a write error detection correction (EDC) encoder to generate first error information associated with the write data. Data bus inversion (DBI) circuitry conditionally inverts data bits associated with each of the write data words based on threshold criteria. Read circuitry receives read data from the memory device. The read circuitry includes a read EDC encoder to generate second error information associated with the received read data. Logic evaluates the first and second error information and conditionally reverse-inverts at least a portion of the read data based on the decoding.

    LOCAL INTERNAL DISCOVERY AND CONFIGURATION OF INDIVIDUALLY SELECTED AND JOINTLY SELECTED DEVICES

    公开(公告)号:US20220156207A1

    公开(公告)日:2022-05-19

    申请号:US17534125

    申请日:2021-11-23

    Applicant: Rambus Inc.

    Abstract: A memory controller interfaces with one or more memory devices having configurable width data buses and configurable connectivity between data pins of the memory devices and data pins of the memory controller. Upon initialization of the memory devices, the memory controller automatically discovers the connectivity configuration of the one or more memory devices, including both individually selected and jointly selected devices. After discovering connectivity of the connected devices, the memory controller configures the memory devices according to the discovered connectivity and assigns unique addresses to jointly selected devices.

    BUFFER CIRCUIT WITH ADAPTIVE REPAIR CAPABILITY

    公开(公告)号:US20220005542A1

    公开(公告)日:2022-01-06

    申请号:US17368018

    申请日:2021-07-06

    Applicant: Rambus Inc.

    Abstract: A buffer circuit is disclosed. The buffer circuit includes a command address (C/A) interface to receive an incoming activate (ACT) command and an incoming column address strobe (CAS) command. A first match circuit includes first storage to store failure row address information associated with the memory, and first compare logic. The first compare logic is responsive to the ACT command, to compare incoming row address information to the stored failure row address information. A second match circuit includes second storage to store failure column address information associated with the memory, and second compare logic. The second compare logic is responsive to the CAS command, to compare the incoming column address information to the stored failure column address information. Gating logic maintains a state of a matching row address identified by the first compare logic during the comparison carried out by the second compare logic.

    MEMORY MODULE WITH DEDICATED REPAIR DEVICES

    公开(公告)号:US20220004472A9

    公开(公告)日:2022-01-06

    申请号:US16670798

    申请日:2019-10-31

    Applicant: Rambus Inc.

    Abstract: A memory module is disclosed. The memory module includes a substrate, and respective first, second and third memory devices. The first memory device is of a first type disposed on the substrate and has addressable storage locations. The second memory device is also of the first type, and includes storage cells dedicated to store failure address information associated with defective storage locations in the first memory device. The third memory device is of the first type and includes storage cells dedicated to substitute as storage locations for the defective storage locations.

    Synchronous wired-OR ACK status for memory with variable write latency

    公开(公告)号:US11101393B2

    公开(公告)日:2021-08-24

    申请号:US16673431

    申请日:2019-11-04

    Applicant: Rambus Inc.

    Abstract: A memory controller comprises a command interface to transmit a memory command to a plurality of memory devices associated with the memory controller. The memory controller also comprises an acknowledgement interface to receive an acknowledgment status packet from the plurality of memory devices over a shared acknowledgement link coupled between the memory controller and the plurality of memory devices, the acknowledgement status packet indicating whether the command was received by the plurality of memory devices. In addition, the memory controller comprises a memory controller core to decode the acknowledgment status packet to identify a portion of the acknowledgement status packet corresponding to each of the plurality of memory devices.

    Reference-following voltage converter

    公开(公告)号:US11029715B1

    公开(公告)日:2021-06-08

    申请号:US16853644

    申请日:2020-04-20

    Applicant: Rambus Inc.

    Abstract: A voltage converter includes first and second inputs to receive a supply voltage and a reference voltage, respectively, from a power supply component, the supply voltage being higher than the reference voltage by a scaling factor of at least five. The voltage converter iteratively charges an internal filter capacitor to produce a converted voltage that follows the reference voltage by switchably coupling the first input to the filter capacitor while the converted voltage is less than the reference voltage to raise the converted voltage, and by switchably decoupling the first input from the filter capacitor while the converted voltage exceeds the reference voltage to enable the converted voltage to decay.

    LOW POWER SIGNALING INTERFACE
    59.
    发明申请

    公开(公告)号:US20200294557A1

    公开(公告)日:2020-09-17

    申请号:US16828591

    申请日:2020-03-24

    Applicant: Rambus Inc.

    Abstract: In a chip-to-chip signaling system includes at least one signaling link coupled between first and second ICs, the first IC has an interface coupled to the signaling link and timed by a first interface timing signal. The second IC has an interface coupled to the signaling link and timed by a second interface timing signal that is mesochronous with respect to the first interface timing signal. The second IC further has phase adjustment circuitry that adjusts a phase of the second interface timing signal using a digital counter implemented with Josephson-junction circuit elements.

    Local Internal Discovery and Configuration of Individually Selected and Jointly Selected Devices

    公开(公告)号:US20200293471A1

    公开(公告)日:2020-09-17

    申请号:US16843871

    申请日:2020-04-08

    Applicant: Rambus Inc.

    Abstract: A memory controller interfaces with one or more memory devices having configurable width data buses and configurable connectivity between data pins of the memory devices and data pins of the memory controller. Upon initialization of the memory devices, the memory controller automatically discovers the connectivity configuration of the one or more memory devices, including both individually selected and jointly selected devices. After discovering connectivity of the connected devices, the memory controller configures the memory devices according to the discovered connectivity and assigns unique addresses to jointly selected devices.

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