公开(公告)号：US09455302B2

公开(公告)日：2016-09-27

申请号：US14584290

申请日：2014-12-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang-hee Lee ,  Kyung Bae Park ,  Gae Hwang Lee ,  Dong-Seok Leem ,  Yong Wan Jin

IPC: H01L29/49 ,  H01L27/30 ,  H01L51/44

CPC classification number: H01L27/307 ,  H01L51/424 ,  H01L51/442 ,  H01L2251/301 ,  Y02E10/549

Abstract: Example embodiments relate to an image sensor that includes a semiconductor substrate integrated with at least one photo-sensing device, an impurity-doped first light-transmitting electrode present in the semiconductor substrate, an organic photoelectric conversion layer positioned on one side of the semiconductor substrate and absorbing light in a different wavelength from the wavelength sensed by the photo-sensing device, and a second light-transmitting electrode positioned on one side of the organic photoelectric conversion layer, and an electronic device including the same.

Abstract translation: 示例实施例涉及一种图像传感器，其包括与至少一个感光装置集成的半导体衬底，存在于半导体衬底中的掺杂杂质的第一透光电极，位于半导体衬底一侧的有机光电转换层 并且吸收与由感光装置感测的波长不同的波长的光和位于有机光电转换层的一侧的第二透光电极和包括该光电转换层的电子装置。

公开(公告)号：US12035548B2

公开(公告)日：2024-07-09

申请号：US17232658

申请日：2021-04-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gae Hwang Lee ,  Dong-Seok Leem ,  Kwang Hee Lee ,  Sung Young Yun ,  Yong Wan Jin

IPC: H01L27/14 ,  G02B5/20 ,  H01L27/146 ,  H10K30/80 ,  H10K39/32 ,  H10K85/20

CPC classification number: H10K39/32 ,  G02B5/208 ,  H01L27/14621 ,  H01L27/14649 ,  H01L27/14667 ,  H10K30/80 ,  H10K85/211 ,  H10K85/215

Abstract: An image sensor may include a photodiode within a semiconductor substrate and configured to sense light in an infrared wavelength spectrum of light, a photoelectric conversion device on the semiconductor substrate and configured to sense light in a visible wavelength spectrum of light, and a filtering element configured to selectively transmit at least a portion of the infrared wavelength spectrum of light and the visible wavelength spectrum of light. The filtering element may include a plurality of color filters on the photoelectric conversion device. The photoelectric conversion device may include a pair of electrodes facing each other and a photoelectric conversion layer between the pair of electrodes and configured to selectively absorb light in a visible wavelength spectrum of light. The filtering element may be between the semiconductor substrate and the photoelectric conversion device and may selectively absorb the infrared light and selectively transmit the visible light.

公开(公告)号：US20230299115A1

公开(公告)日：2023-09-21

申请号：US18186402

申请日：2023-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Bae Park ,  Yong Wan Jin ,  Sung Young Yun ,  Sung Jun Park ,  Feifei Fang ,  Chul Joon Heo

IPC: H01L27/146 ,  H01L31/0352

CPC classification number: H01L27/14647 ,  H01L31/035209

Abstract: An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.

公开(公告)号：US11716892B2

公开(公告)日：2023-08-01

申请号：US17227845

申请日：2021-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Bae Park ,  Sung Young Yun ,  Gae Hwang Lee ,  Yong Wan Jin ,  Chui Joon Heo

IPC: H01L27/32 ,  H01L31/105 ,  G06V10/143 ,  G06V40/13

CPC classification number: H01L27/3234 ,  G06V10/143 ,  G06V40/1318 ,  H01L27/323 ,  H01L27/3211 ,  H01L31/105

Abstract: An OLED display panel may include a substrate, an OLED light emitter on the substrate and configured to emit light, and a visible light sensor on the substrate and configured to detect at least a portion of the emitted light based on reflection of the portion of the emitted light from a recognition target. The visible light sensor is in a non-light emitting region adjacent to the OLED light emitter so as to be horizontally aligned with the OLED light emitter in a horizontal direction extending parallel to an upper surface of the substrate, or between the substrate and a non-light emitting region adjacent to the OLED light emitter such that the visible light sensor is vertically aligned with the non-light emitting region in a vertical direction extending perpendicular to the upper surface of the substrate.

公开(公告)号：US11713952B2

公开(公告)日：2023-08-01

申请号：US16875188

申请日：2020-05-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Bae Park ,  Sung Jun Park ,  Hiromasa Shibuya ,  Sung Young Yun ,  Gae Hwang Lee ,  Yong Wan Jin ,  Chui Joon Heo

IPC: H10K30/30 ,  F42B35/00 ,  G02B21/18 ,  G06T7/00 ,  H10K85/60 ,  H10K85/20

CPC classification number: F42B35/00 ,  G02B21/18 ,  G06T7/0004 ,  H10K85/621 ,  H10K85/6572 ,  H10K30/30 ,  H10K85/211

Abstract: Disclosed are an organic photoelectric device including a first electrode and a second electrode facing each other and a photoelectric conversion layer between the first electrode and the second electrode, wherein the photoelectric conversion layer includes a p-type semiconductor, an n-type semiconductor, and an n-type dopant represented by Chemical Formula 1, and an image sensor and an electronic device including the same.




Definitions of Chemical Formula 1 are the same as defined in the detailed description.

公开(公告)号：US11495640B2

公开(公告)日：2022-11-08

申请号：US15471289

申请日：2017-03-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Seok Leem ,  Kwang Hee Lee ,  Tadao Yagi ,  Sung Young Yun ,  Gae Hwang Lee ,  Seon-Jeong Lim ,  Yong Wan Jin

IPC: H01L47/00 ,  H01L27/30 ,  H01L51/42 ,  H01L51/00 ,  H01L51/44

Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a photoelectric conversion region including a p-type light-absorbing material and an n-type light-absorbing material and a doped region including an exciton quencher and at least one of the p-type light-absorbing material and the n-type light-absorbing material, wherein at least one of the p-type light-absorbing material and the n-type light-absorbing material selectively absorbs a part of visible light, and an image sensor includes the same.

公开(公告)号：US11114634B2

公开(公告)日：2021-09-07

申请号：US16031412

申请日：2018-07-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Bae Park ,  Kyu Sik Kim ,  Yong Wan Jin ,  Kwang Hee Lee ,  Dong-Seok Leem ,  Seon-Jeong Lim

IPC: H01L51/42

Abstract: A photodiode according to example embodiments includes an anode, a cathode, and an intrinsic layer between the anode and the cathode. The intrinsic layer includes a P-type semiconductor and an N-type semiconductor, and composition ratios of the P-type semiconductor and the N-type semiconductor vary within the intrinsic layer depending on a distance of the intrinsic layer from one of the anode and the cathode.

公开(公告)号：US10976195B2

公开(公告)日：2021-04-13

申请号：US16165014

申请日：2018-10-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Seok Leem ,  Gae Hwang Lee ,  Yong Wan Jin ,  Tae Yon Lee

IPC: G01J1/42 ,  H01L27/146 ,  G06K9/20 ,  G01J1/04 ,  G01J1/44 ,  G06K9/00 ,  H01L27/30

Abstract: A combination sensor may include a first infrared light sensor and a second infrared light sensor. The first infrared light sensor may be configured to sense light in a first wavelength within an infrared wavelength spectrum. The second infrared light sensor may be configured to sense light in a second wavelength that is different from the first wavelength within the infrared wavelength spectrum. The first infrared light sensor and the second infrared light sensor may be stacked in relation to each other.

公开(公告)号：US10950800B2

公开(公告)日：2021-03-16

申请号：US15962230

申请日：2018-04-25

Applicant: Samsung Electronics Co., Ltd. ,  IMPERIAL INNOVATIONS LIMITED

Inventor： Moon Gyu Han ,  Kyung Bae Park ,  Yong Wan Jin ,  Chul Joon Heo ,  Brett Baatz ,  Martin Heeney ,  Minwon Suh ,  Yang Han ,  Ji-Seon Kim

IPC: C07D495/00 ,  H01L51/00 ,  C07D487/04 ,  H01L27/30 ,  H01L51/42 ,  H01L51/05

Abstract: A compound for an infrared light sensing device may be represented by a particular chemical formula and may be included in an infrared light sensing device. An image sensor may include the infrared light sensing device, and an electronic device may include the image sensor.

公开(公告)号：US10950641B2

公开(公告)日：2021-03-16

申请号：US16026224

申请日：2018-07-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong Wan Jin ,  Gae Hwang Lee ,  Seon-Jeong Lim ,  Sung Young Yun ,  Kwang Hee Lee

IPC: H01L27/146 ,  H01L27/30 ,  H04N1/00

Abstract: An image sensor includes a semiconductor substrate including a plurality of photo-sensing devices, a photoelectric conversion device disposed on the semiconductor substrate and absorbing the mixed light of a first color and a second color, and a color filter disposed on one side of the photoelectric conversion device and configured to selectively transmit a mixed light including a third color, and an electronic device including the image sensor is provided.