公开(公告)号：US20210210519A1

公开(公告)日：2021-07-08

申请号：US17206906

申请日：2021-03-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Atsushi HIROSE ,  Masashi TSUBUKU ,  Kosei NODA

IPC: H01L27/12 ,  H01L29/786 ,  H01L33/02 ,  H04R1/02 ,  H01L29/36 ,  H01L27/15 ,  H01L27/32 ,  H01L29/24 ,  H04M1/02

Abstract: An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

公开(公告)号：US20210175362A1

公开(公告)日：2021-06-10

申请号：US17182269

申请日：2021-02-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kosei NODA

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L21/425 ,  H01L29/22

Abstract: A semiconductor device with stable electrical characteristics is provided. Alternatively, a semiconductor device having normally-off electrical characteristics is provided. A semiconductor device includes a gate electrode, a gate insulator, and an oxide semiconductor, the oxide semiconductor contains fluorine in a channel formation region, and a fluorine concentration in the channel formation region is higher than or equal to 1×1020 atoms/cm3 and lower than or equal to 1×1022 atoms/cm3. Note that fluorine is added by an ion implantation method.

公开(公告)号：US20200335628A1

公开(公告)日：2020-10-22

申请号：US16919441

申请日：2020-07-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Masashi TSUBUKU ,  Kosei NODA

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/02

Abstract: A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×1019 (atoms/cm3) or less and thus substantially serves as an insulator in a state where an electric field is not generated. Therefore, off-state current of a thin film transistor can be reduced, leading to suppressing the leakage of electric charge stored in a capacitor, through the thin film transistor. Accordingly, a malfunction of the logic circuit can be prevented. Further, the excessive amount of current which flows in the logic circuit can be reduced through the reduction of off-state current of the thin film transistor, resulting in low power consumption of the logic circuit.

公开(公告)号：US20190312063A1

公开(公告)日：2019-10-10

申请号：US16435966

申请日：2019-06-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Atsushi HIROSE ,  Masashi TSUBUKU ,  Kosei NODA

IPC: H01L27/12 ,  H04R1/02 ,  H01L33/02 ,  H04M1/02 ,  H01L27/15 ,  H01L27/32 ,  H01L29/786 ,  H01L29/24 ,  H01L29/36

Abstract: An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

公开(公告)号：US20190115455A1

公开(公告)日：2019-04-18

申请号：US16209023

申请日：2018-12-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA

IPC: H01L29/66 ,  H01L29/51 ,  H01L29/786 ,  H01L21/425 ,  H01L21/02 ,  H01L29/423 ,  H01L21/477

Abstract: A semiconductor device is manufactured using a transistor in which an oxide semiconductor is included in a channel region and variation in electric characteristics due to a short-channel effect is less likely to be caused. The semiconductor device includes an oxide semiconductor film having a pair of oxynitride semiconductor regions including nitrogen and an oxide semiconductor region sandwiched between the pair of oxynitride semiconductor regions, a gate insulating film, and a gate electrode provided over the oxide semiconductor region with the gate insulating film positioned therebetween. Here, the pair of oxynitride semiconductor regions serves as a source region and a drain region of the transistor, and the oxide semiconductor region serves as the channel region of the transistor.

公开(公告)号：US20180364510A1

公开(公告)日：2018-12-20

申请号：US16109886

申请日：2018-08-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE ,  Masashi TSUBUKU ,  Kosei NODA

IPC: G02F1/1368 ,  H01L29/786 ,  H01L27/12 ,  G09G3/36

CPC classification number: G02F1/1368 ,  G09G3/3611 ,  G09G3/3648 ,  G09G3/3674 ,  G09G3/3677 ,  G09G5/18 ,  G09G2310/0286 ,  G09G2320/103 ,  G09G2330/021 ,  G09G2330/022 ,  G09G2330/027 ,  H01L27/1225 ,  H01L29/7869

Abstract: A liquid crystal display device includes: a driver circuit portion; a pixel portion; a signal generation circuit for generating a control signal for driving the driver circuit portion and an image signal which is supplied to the pixel portion; a memory circuit; a comparison circuit for detecting a difference of image signals for a series of frame periods among image signals stored for respective frame periods in the memory circuit; a selection circuit which selects and outputs the image signals for the series of frame periods when the difference is detected in the comparison circuit; and a display control circuit which supplies the control signal and the image signals output from the selection circuit, to the driver circuit portion when the difference is detected in the comparison circuit, and stops supplying the control signal to the driver circuit portion when the difference is not detected in the comparison circuit.

公开(公告)号：US20180301476A1

公开(公告)日：2018-10-18

申请号：US16008437

申请日：2018-06-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Masashi TSUBUKU ,  Kosei NODA

IPC: H01L27/12 ,  H03K19/096 ,  G09G3/20 ,  H03K17/16 ,  H01L29/786 ,  G11C19/28 ,  G11C19/18 ,  H03K19/003 ,  G09G3/3291 ,  G09G3/36 ,  G09G3/3233

Abstract: To reduce a leakage current of a transistor so that malfunction of a logic circuit can be suppressed. The logic circuit includes a transistor which includes an oxide semiconductor layer having a function of a channel formation layer and in which an off current is 1×10−13A or less per micrometer in channel width. A first signal, a second signal, and a third signal that is a clock signal are input as input signals. A fourth signal and a fifth signal whose voltage states are set in accordance with the first to third signals which have been input are output as output signals.

公开(公告)号：US20180151744A1

公开(公告)日：2018-05-31

申请号：US15879784

申请日：2018-01-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kosei NODA ,  Noriyoshi SUZUKI

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02664 ,  H01L29/42384 ,  H01L29/66969

Abstract: A highly reliable semiconductor device having stable electric characteristics is provided by suppressing, in a transistor including an oxide semiconductor film, diffusion of indium into an insulating film in contact with the oxide semiconductor film and improving the characteristics of the interface between the oxide semiconductor film and the insulating film. In an oxide semiconductor film containing indium, the indium concentration at a surface is decreased, thereby preventing diffusion of indium into an insulating film on and in contact with the oxide semiconductor film. By decreasing the indium concentration at the surface of the oxide semiconductor film, a layer which does not substantially contain indium can be formed at the surface. By using this layer as part of the insulating film, the characteristics of the interface between the oxide semiconductor film and the insulating film in contact with the oxide semiconductor film are improved.

公开(公告)号：US20170263777A1

公开(公告)日：2017-09-14

申请号：US15609513

申请日：2017-05-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE ,  Kei TAKAHASHI ,  Kouhei TOYOTAKA ,  Masashi TSUBUKU ,  Kosei NODA ,  Hideaki KUWABARA

IPC: H01L29/786 ,  H01L23/552 ,  H01L23/66 ,  H01L49/02 ,  H01L27/02 ,  H01L27/108 ,  H01L27/12 ,  H01L21/84 ,  H01L25/16

CPC classification number: H01L29/7869 ,  H01L21/84 ,  H01L23/552 ,  H01L23/60 ,  H01L23/66 ,  H01L25/16 ,  H01L27/0222 ,  H01L27/10873 ,  H01L27/12 ,  H01L27/1225 ,  H01L28/20 ,  H01L28/60 ,  H01L29/78609 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit included in an LSI, a CPU, or a memory is manufactured using the transistor which is formed using an oxide semiconductor which is an intrinsic or substantially intrinsic semiconductor obtained by removal of impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than a silicon semiconductor, and is formed over a semiconductor substrate. With the transistor which is formed over the semiconductor substrate and includes the highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device whose power consumption due to leakage current is low can be realized.

公开(公告)号：US20170200748A1

公开(公告)日：2017-07-13

申请号：US15469888

申请日：2017-03-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Masashi TSUBUKU ,  Kosei NODA

IPC: H01L27/12 ,  H03K17/16 ,  G09G3/36 ,  G11C19/18

CPC classification number: H01L27/1255 ,  G09G3/20 ,  G09G3/2092 ,  G09G3/3233 ,  G09G3/3291 ,  G09G3/36 ,  G09G3/3648 ,  G09G2300/0439 ,  G09G2300/08 ,  G09G2300/0842 ,  G09G2310/0267 ,  G09G2310/0275 ,  G09G2310/0286 ,  G09G2310/08 ,  G11C19/184 ,  G11C19/28 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/7869 ,  H03K17/161 ,  H03K19/00315 ,  H03K19/096

Abstract: To reduce a leakage current of a transistor so that malfunction of a logic circuit can be suppressed. The logic circuit includes a transistor which includes an oxide semiconductor layer having a function of a channel formation layer and in which an off current is 1×10−13 A or less per micrometer in channel width. A first signal, a second signal, and a third signal that is a clock signal are input as input signals. A fourth signal and a fifth signal whose voltage states are set in accordance with the first to third signals which have been input are output as output signals.