公开(公告)号：US20160357213A1

公开(公告)日：2016-12-08

申请号：US15243556

申请日：2016-08-22

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Jimmy Fort ,  Thierry Soude

IPC: G05F3/26

CPC classification number: G05F3/267 ,  G05F1/468 ,  G05F3/30

Abstract: A circuit includes a first PMOS transistor that includes a first PMOS source coupled to a first input node, a first PMOS gate, and a first PMOS drain. A second PMOS transistor includes a second PMOS source coupled to a second input node, a second PMOS gate, and a second PMOS drain coupled to the second PMOS gate. A first resistor coupled between the first PMOS source and a ground node. A first diode element coupled between the first resistor and the ground node and a second diode element coupled between the second PMOS source and the ground node. A third PMOS transistor includes a third PMOS gate, a third PMOS source coupled to a supply node, and a third PMOS drain coupled to the first input node. A fourth PMOS transistor includes a fourth PMOS gate coupled to the third PMOS gate, a fourth PMOS source coupled to the supply node, and a fourth PMOS drain coupled to the second input node.

Abstract translation: 电路包括第一PMOS晶体管，其包括耦合到第一输入节点的第一PMOS源极，第一PMOS栅极和第一PMOS漏极。 第二PMOS晶体管包括耦合到第二输入节点的第二PMOS源极，第二PMOS栅极和耦合到第二PMOS栅极的第二PMOS漏极。 耦合在第一PMOS源极和接地节点之间的第一电阻器。 耦合在第一电阻器和接地节点之间的第一二极管元件和耦合在第二PMOS源极和接地节点之间的第二二极管元件。 第三PMOS晶体管包括第三PMOS栅极，耦合到电源节点的第三PMOS源极和耦合到第一输入节点的第三PMOS漏极。 第四PMOS晶体管包括耦合到第三PMOS栅极的第四PMOS栅极，耦合到电源节点的第四PMOS源极和耦合到第二输入节点的第四PMOS漏极。

公开(公告)号：US20160133582A1

公开(公告)日：2016-05-12

申请号：US14686908

申请日：2015-04-15

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Fabrice Marinet ,  Julien Mercier ,  Jimmy Fort ,  Alexandre Sarafianos

IPC: H01L23/00 ,  H01L27/092 ,  H01L29/732 ,  H01L27/06

CPC classification number: H01L23/576 ,  G09C1/00 ,  H01L23/57 ,  H01L27/0635 ,  H01L27/0658 ,  H01L27/092 ,  H01L29/7322 ,  H01L2924/0002 ,  H04L9/004 ,  H04L2209/12 ,  H01L2924/00

Abstract: A device for detecting a laser attack made on an integrated circuit chip comprises a bipolar transistor of a first type formed in a semiconductor substrate, that bipolar transistor comprising a parasitic bipolar transistor of a second type. A buried region, forming the base of the parasitic bipolar transistor, operates as a detector of the variations in current flowing caused by impingement of laser light on the substrate.

公开(公告)号：US20160062377A1

公开(公告)日：2016-03-03

申请号：US14937671

申请日：2015-11-10

Applicant: STMICROELECTRONICS (ROUSSET) SAS

Inventor： Jimmy Fort ,  Thierry Soude

IPC: G05F1/575

CPC classification number: G05F1/575 ,  H03F3/45179

Abstract: The regulator with a low dropout voltage comprises an error amplifier comprising a differential pair of input transistors and a circuit with folded cascode structure connected to the output of the said differential pair, an output stage connected to the output node of the error amplifier, and a Miller compensation capacitor connected between the output stage and the cascode node on the output side (XP) of the cascode circuit; the error amplifier furthermore comprises at least one inverting amplifier module in a feedback loop between the said cascode node and the gate of the cascode transistor of the cascode circuit connected between the said cascode node and the said output node.

公开(公告)号：US09070697B2

公开(公告)日：2015-06-30

申请号：US14531025

申请日：2014-11-03

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Fabrice Marinet ,  Jimmy Fort ,  Alexandre Sarafianos ,  Julien Mercier

IPC: H01L29/00 ,  H01L23/00 ,  H01L29/732 ,  H01L27/092 ,  H01L27/06

CPC classification number: H01L23/576 ,  G09C1/00 ,  H01L23/57 ,  H01L27/0635 ,  H01L27/0658 ,  H01L27/092 ,  H01L29/7322 ,  H01L2924/0002 ,  H04L9/004 ,  H04L2209/12 ,  H01L2924/00

Abstract: A device for detecting a laser attack made on an integrated circuit chip comprises a bipolar transistor of a first type formed in a semiconductor substrate, that bipolar transistor comprising a parasitic bipolar transistor of a second type. A buried region, forming the base of the parasitic bipolar transistor, operates as a detector of the variations in current flowing caused by impingement of laser light on the substrate.

Abstract translation: 用于检测在集成电路芯片上形成的激光攻击的装置包括形成在半导体衬底中的第一类型的双极晶体管，该双极晶体管包括第二类型的寄生双极晶体管。 形成寄生双极晶体管的基极的掩埋区域作为由激光照射在衬底上引起的电流变化的检测器。

公开(公告)号：US20150001938A1

公开(公告)日：2015-01-01

申请号：US14315989

申请日：2014-06-26

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Jimmy Fort

IPC: H02M1/08

CPC classification number: H02M1/08 ,  G06F21/755 ,  Y10T307/549

Abstract: An electronic circuit includes a functional circuit in series with at least one first current source between two terminals of application of a power supply voltage. The first current source is controllable between an operating mode where it delivers a fixed current, independent from the power consumption of said functional circuit, and an operating mode where it delivers a variable current, depending on the power consumption of the functional circuit.

Abstract translation: 电子电路包括与施加电源电压的两个端子之间的至少一个第一电流源串联的功能电路。 第一电流源可以在其提供固定电流的操作模式之间是可控的，独立于所述功能电路的功耗，以及根据功能电路的功耗而传送可变电流的操作模式。

公开(公告)号：US08907452B2

公开(公告)日：2014-12-09

申请号：US13751549

申请日：2013-01-28

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Fabrice Marinet ,  Jimmy Fort ,  Alexandre Sarafianos ,  Julien Mercier

IPC: H01L27/082

CPC classification number: H01L23/576 ,  G09C1/00 ,  H01L23/57 ,  H01L27/0635 ,  H01L27/0658 ,  H01L27/092 ,  H01L29/7322 ,  H01L2924/0002 ,  H04L9/004 ,  H04L2209/12 ,  H01L2924/00

Abstract: A device for detecting a laser attack in an integrated circuit chip formed in the upper P-type portion of a semiconductor substrate incorporating an NPN bipolar transistor having an N-type buried layer, including a detector of the variations of the current flowing between the base of said NPN bipolar transistor and the substrate.

Abstract translation: 一种用于检测形成在具有N型掩埋层的NPN双极晶体管的半导体衬底的上部P型部分中形成的集成电路芯片中的激光攻击的装置，包括：检测器， 的NPN双极晶体管和衬底。