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    Image and depth pixel
    52.
    发明授权
    Image and depth pixel 有权

    公开(公告)号：US12040335B2

    公开(公告)日：2024-07-16

    申请号：US17944529

    申请日：2022-09-14

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Francois Roy

    IPC: H01L27/146 ,  H04N25/53 ,  H04N25/621 ,  H04N25/705 ,  H04N25/75 ,  H04N25/77

    CPC classification number: H01L27/14603 ,  H01L27/1463 ,  H04N25/53 ,  H04N25/621 ,  H04N25/705 ,  H04N25/75 ,  H04N25/77

    Abstract: A sensor includes pixels supported by a substrate doped with a first conductivity type. Each pixel includes a portion of the substrate delimited by a vertical insulation structure with an image sensing assembly and a depth sensing assembly. The image sensing assembly includes a first region of the substrate more heavily doped with the first conductivity type and a first vertical transfer gate completely laterally surrounding the first region. Each of the depth sensing assemblies includes a second region of the substrate more heavily doped with the first conductivity type a second vertical transfer gate opposite a corresponding portion of the first vertical transfer gate. The second region is arranged between the second vertical transfer gate and the corresponding portion of the first vertical transfer gate.

    Electronic device image sensor
    54.
    发明授权
    Electronic device image sensor 有权

    公开(公告)号：US11682689B2

    公开(公告)日：2023-06-20

    申请号：US17128604

    申请日：2020-12-21

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Francois Roy ,  Sonarith Chhun

    IPC: H01L27/146

    CPC classification number: H01L27/14636 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/1464

    Abstract: An electronic device includes a substrate semiconductor wafer with semiconductor portions separated from one another by through-passages. Electronic circuits and a dielectric layer with a network of electrical connections are formed at a front face of the substrate semiconductor wafer. Electrically conductive fillings are contained within the through-passages and are connected to the network of electrical connections. Interior dielectric layers for anti-diffusion protection are provided in the through-passages between the electrically conductive fillings and the semiconductor portions. Back side dielectric layers are joined to the interior dielectric layers.

    Image sensor comprising, a pixel equipped with a MOS capacitive element, and corresponding control method
    55.
    发明授权
    Image sensor comprising, a pixel equipped with a MOS capacitive element, and corresponding control method 有权

    公开(公告)号：US11581345B2

    公开(公告)日：2023-02-14

    申请号：US17122314

    申请日：2020-12-15

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Francois Roy

    IPC: H04N5/3745 ,  H01L27/146

    Abstract: An image sensor includes a pixel with a photosensitive region accommodated within a semiconductor substrate and a MOS capacitive element with a conducting electrode electrically isolated by a dielectric layer. The dielectric layer forms an interface with both the photosensitive region and the semiconductor substrate, the interface of the dielectric layer including charge traps. A control circuit biases the electrode of the MOS capacitive element with a charge pumping signal designed to generate an alternation of successive inversion regimes and accumulation regimes in the photosensitive region. The charge pumping signal produces recombinations of photogenerated charges in the charge traps of the interface of the dielectric layer and the generation of a substrate current to empty recombined photogenerated charges.

    Single photon avalanche gate sensor device
    56.
    发明授权
    Single photon avalanche gate sensor device 有权

    公开(公告)号：US11387379B2

    公开(公告)日：2022-07-12

    申请号：US16789052

    申请日：2020-02-12

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Francois Roy

    IPC: H01L31/113 ,  H01L31/0224 ,  H01L27/146

    Abstract: A semiconductor layer is doped with a first doping type and has an upper surface. A first electrode insulated from the semiconductor layer extending through the semiconductor layer from the upper surface. A second electrode insulated from the semiconductor layer extends through the semiconductor layer from the upper surface. The first and second electrodes are biased by a voltage to produce an electrostatic field within the semiconductor layer causing the formation of a depletion region. The depletion region responds to absorption of a photon with an avalanche multiplication that produces charges that are collected at first and second oppositely doped regions within the semiconductor substrate.

    LOW-NOISE WIDE DYNAMIC RANGE IMAGE SENSOR
    57.
    发明申请
    LOW-NOISE WIDE DYNAMIC RANGE IMAGE SENSOR 审中-公开

    公开(公告)号：US20200066780A1

    公开(公告)日：2020-02-27

    申请号：US16547231

    申请日：2019-08-21

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Francois Roy ,  Stephane Hulot ,  Andrej Suler ,  Nicolas Virollet

    IPC: H01L27/146

    Abstract: A semiconductor image sensor includes a plurality of pixels. Each pixel of the sensor includes a semiconductor substrate having opposite front and back sides and laterally delimited by a first insulating wall including a first conductive core insulated from the substrate, electron-hole pairs being capable of forming in the substrate due to a back-side illumination. A circuit is configured to maintain, during a first phase in a first operating mode, the first conductive core at a first potential and to maintain, during at least a portion of the first phase in a second operating mode, the first conductive core at a second potential different from the first potential.

    Electronic image capture device
    58.
    发明授权
    Electronic image capture device 有权

    公开(公告)号：US10475827B2

    公开(公告)日：2019-11-12

    申请号：US16035193

    申请日：2018-07-13

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Francois Roy

    IPC: H01L27/146

    Abstract: An electronic image capture device includes a first portion and a second portion. The first portion is formed by a substrate wafer provided on one side with electronic circuits and a dielectric layer with a network of electrical connections and external electrical contacts on an outer surface. The second portion includes a pixel wafer capable of generating electrical signals under the effect of light, a substrate wafer mounted to the pixel wafer and provided with electronic circuits and a dielectric layer with a network of electrical connections and external electrical contacts on an outer surface. The outer surfaces and external electrical contacts are bonded to each other so as to mount the first portion to the second portion. A connection pad extends through a hole in the pixel wafer to make electrical connection to the network of electrical connections of the second portion.

    Vertical Transfer Gate with Charge Transfer and Charge Storage Capabilities
    59.
    发明申请
    Vertical Transfer Gate with Charge Transfer and Charge Storage Capabilities 审中-公开

    公开(公告)号：US20190237499A1

    公开(公告)日：2019-08-01

    申请号：US15882482

    申请日：2018-01-29

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Francois Roy

    IPC: H01L27/146 ,  H04N5/374 ,  H04N5/378

    CPC classification number: H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H04N5/3575 ,  H04N5/374 ,  H04N5/378

    Abstract: In an embodiment, an image sensor includes a semiconductor region, a first doped region disposed over the semiconductor region, a ring shaped well disposed over the first doped region and surrounding parts of the first doped region, a second doped region formed within the ring shaped well and disposed over the first doped region, and a third doped region disposed over the second doped region. The ring shaped well is defined by a conductor surrounded by an insulator. The conductor is connected to a voltage terminal. The third doped region is more heavily doped than the second doped region, which is more heavily doped than the first region, and are all of the same doping type. The first doped region and the second doped region within the ring shaped well, form a potential barrier for controlling transfer of charge carriers from the first doped region to the third doped region.

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