Wiring layer, semiconductor device, and liquid crystal display device using semiconductor device
    51.
    发明授权
    Wiring layer, semiconductor device, and liquid crystal display device using semiconductor device 有权
    接线层,半导体器件和使用半导体器件的液晶显示器件

    公开(公告)号:US08373832B2

    公开(公告)日:2013-02-12

    申请号:US13503699

    申请日:2010-10-21

    IPC分类号: G02F1/1343

    摘要: An electrode film, which is not peeled off from an oxide thin film and in which a copper atom does not diffuse into the oxide thin film, is provided. A wiring layer is composed of a high-adhesion barrier film 37, which is a thin film of Cu—Mg—Al and a copper thin film 38; and the high-adhesion barrier film 37 is brought into contact with the oxide thin film. When a total number of atoms of copper, magnesium, and aluminum is set to 100 at %, if the high-adhesion barrier film 37 contains magnesium in a range of between 0.5 at % and 5 at and aluminum in a range of between 5 at % and 15 at %, then wiring layers 50a, 50b, can be obtained, whereby the adhesion and the barrier property are compatible with each other, adherence is strong, and a copper atom does not diffuse.

    摘要翻译: 提供了未从氧化物薄膜剥离并且铜原子不扩散到氧化物薄膜中的电极膜。 布线层由作为Cu-Mg-Al的薄膜和铜薄膜38的高粘合阻挡膜37构成, 并使高附着阻挡膜37与氧化物薄膜接触。 当铜,镁和铝的原子总数设定为100原子%时,如果高粘合阻挡膜37含有0.5at%至5at的范围内的镁,并且在5at %和15原子%,然后可以获得布线层50a,50b,由此粘合性和阻隔性彼此相容,粘附性强,铜原子不扩散。

    Method for producing thin film transistor and thin film transistor
    52.
    发明授权
    Method for producing thin film transistor and thin film transistor 有权
    薄膜晶体管和薄膜晶体管的制造方法

    公开(公告)号:US08299529B2

    公开(公告)日:2012-10-30

    申请号:US12881652

    申请日:2010-09-14

    IPC分类号: H01L27/01 H01L21/00

    摘要: A metallic wiring film, which is not exfoliated even when exposed to plasma of hydrogen, is provided. A metallic wiring film is constituted by an adhesion layer in which Al is added to copper and a metallic low-resistance layer which is disposed on the adhesion layer and made of pure copper. When a copper alloy including Al and oxygen are included in the adhesion layer and a source electrode and a drain electrode are formed from it, copper does not precipitate at an interface between the adhesion layer and the silicon layer even when being exposed to the hydrogen plasma, which prevents the occurrence of exfoliation between the adhesion layer and the silicon layer. If the amount of Al increases, since widths of the adhesion layer and the metallic low-resistance layer largely differ after etching, the maximum addition amount for permitting the etching to be performed is the upper limit.

    摘要翻译: 提供即使暴露于氢等离子体时也不会剥离的金属布线膜。 金属布线膜由其中添加有Al的粘合层和设置在粘合层上并由纯铜制成的金属低电阻层构成。 当包含Al和氧的铜合金包括在粘合层中并且由其形成源电极和漏电极时,即使当暴露于氢等离子体时,铜也不会在粘附层和硅层之间的界面处析出 ,其防止粘附层和硅层之间的剥离的发生。 如果Al的量增加,由于粘合层和金属低电阻层的宽度在蚀刻之后大大不同,所以允许进行蚀刻的最大添加量是上限。

    WIRING LAYER, SEMICONDUCTOR DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE USING SEMICONDUCTOR DEVICE
    53.
    发明申请
    WIRING LAYER, SEMICONDUCTOR DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE USING SEMICONDUCTOR DEVICE 有权
    接线层,半导体器件和使用半导体器件的液晶显示器件

    公开(公告)号:US20120262659A1

    公开(公告)日:2012-10-18

    申请号:US13503699

    申请日:2010-10-21

    IPC分类号: G02F1/1343 H05K1/09 H01L29/78

    摘要: An electrode film, which is not peeled off from an oxide thin film and in which a copper atom does not diffuse into the oxide thin film, is provided. A wiring layer is composed of a high-adhesion barrier film 37, which is a thin film of Cu—Mg—Al and a copper thin film 38; and the high-adhesion barrier film 37 is brought into contact with the oxide thin film. When a total number of atoms of copper, magnesium, and aluminum is set to 100 at %, if the high-adhesion barrier film 37 contains magnesium in a range of between 0.5 at % and 5 at and aluminum in a range of between 5 at % and 15 at %, then wiring layers 50a, 50b, can be obtained, whereby the adhesion and the barrier property are compatible with each other, adherence is strong, and a copper atom does not diffuse,

    摘要翻译: 提供了未从氧化物薄膜剥离并且铜原子不扩散到氧化物薄膜中的电极膜。 布线层由作为Cu-Mg-Al的薄膜和铜薄膜38的高粘合阻挡膜37构成, 并使高附着阻挡膜37与氧化物薄膜接触。 当铜,镁和铝的原子总数设定为100原子%时,如果高粘合阻挡膜37含有0.5at%至5at的范围内的镁,并且在5at %和15原子%,然后可以获得布线层50a,50b,由此粘附性和阻隔性彼此相容,粘附性强,铜原子不扩散,

    Touch panel, and method for manufacturing touch panel
    54.
    发明授权
    Touch panel, and method for manufacturing touch panel 有权
    触控面板及触控面板制造方法

    公开(公告)号:US08207949B2

    公开(公告)日:2012-06-26

    申请号:US12567089

    申请日:2009-09-25

    IPC分类号: G06F3/041

    摘要: A highly durable touch panel is provided. A touch panel according to the present invention includes a deformable flexible panel, and a transparent electrode film containing In2O3 as a primary component and containing Ti is exposed to a surface of a lower electrode film of a display device. Since such a transparent electrode film has a high abrasion resistance as compared to a conventional one (such as, an ITO thin film), the transparent electrode film is neither clouded nor cracked even if the lower electrode film is repeatedly pressed. Therefore, the touch panel according to the present invention is highly durable.

    摘要翻译: 提供高度耐用的触摸面板。 根据本发明的触摸面板包括可变形的柔性面板,并且包含In 2 O 3作为主要成分并且含有Ti的透明电极膜暴露于显示装置的下电极膜的表面。 由于这种透明电极膜与以往的透明电极膜相比具有高耐磨性(例如ITO薄膜),所以即使下反射膜反复被压制,透明电极膜也不会发生糊化或者不破裂。 因此,根据本发明的触摸面板是高度耐用的。

    METHOD FOR PRODUCING ELECTRONIC DEVICE, ELECTRONIC DEVICE, SEMICONDUCTOR DEVICE, AND TRANSISTOR
    55.
    发明申请
    METHOD FOR PRODUCING ELECTRONIC DEVICE, ELECTRONIC DEVICE, SEMICONDUCTOR DEVICE, AND TRANSISTOR 审中-公开
    用于制造电子器件的方法,电子器件,半导体器件和晶体管

    公开(公告)号:US20120119269A1

    公开(公告)日:2012-05-17

    申请号:US13310056

    申请日:2011-12-02

    IPC分类号: H01L29/78 H01L23/48 B05D5/12

    摘要: A technique is provided which prevents an increase in the resistivity of a conductive wiring film. A conductive layer containing Ca in a content rate of 0.3 atom % or more is provided on the surfaces of each of conductive wiring films which are to be exposed to a gas containing a Si atom in a chemical structure at a high temperature. When a gate insulating layer or a protection film containing Si is formed on the surface of the conductive layer, the Si atoms do not diffuse into the conductive layer and a resistance value does not increase, even if the conductive layer is exposed to the raw material gas containing Si in a chemical structure . Further, a CuCaO layer can be formed as an adhesive layer for preventing Si diffusion from a glass substrate or a silicon semiconductor.

    摘要翻译: 提供了防止导电布线膜的电阻率增加的技术。 在高温化学结构中暴露于含有Si原子的气体的导电布线膜的表面上,设置含有0.3原子%以上的Ca的导电层。 当在导电层的表面上形成栅绝缘层或含有Si的保护膜时,即使导电层暴露于原料,Si原子也不会扩散到导电层中,并且电阻值不增加 含有化学结构中的Si的气体。 此外,CuCaO层可以形成为用于防止Si从玻璃衬底或硅半导体扩散的粘合剂层。

    MAGNETRON SPUTTERING CATHODE AND FILM FORMATION APPARATUS
    56.
    发明申请
    MAGNETRON SPUTTERING CATHODE AND FILM FORMATION APPARATUS 审中-公开
    MAGNETRON溅射阴极和膜形成装置

    公开(公告)号:US20120097534A1

    公开(公告)日:2012-04-26

    申请号:US13060623

    申请日:2009-08-28

    IPC分类号: C23C14/35

    摘要: A magnetron sputtering cathode includes: a yoke; a magnetic circuit having a central magnet portion, a peripheral edge magnet portion, an auxiliary magnet portion, and a parallel area; and a backing plate. The central magnet portion, the peripheral edge magnet portion, and the auxiliary magnet portion are disposed so that polarities of tip portions of the central magnet portion, the peripheral edge magnet portion, and the auxiliary magnet portion are different from each other at portions between adjacent magnet portions. The magnetic field profile observed from above of the backing plate and the magnetic flux density in a horizontal direction are determined so that the magnetic flux density in a first area is a positive value and the magnetic flux density in a second area is a negative value with respect to a position corresponding to the central magnet portion as a boundary.

    摘要翻译: 磁控溅射阴极包括:磁轭; 具有中心磁体部分,周缘磁铁部分,辅助磁体部分和平行区域的磁路; 和背板。 中心磁体部分,周缘磁铁部分和辅助磁体部分被设置成使得中心磁体部分,周边磁体部分和辅助磁体部分的尖端部分的极性在相邻的部分之间的部分彼此不同 磁铁部分。 确定从背板的上方观察的磁场分布和水平方向的磁通密度,使得第一区域中的磁通密度为正值,第二区域中的磁通密度为负值, 相对于与中心磁体部分相对应的位置作为边界。

    METHOD FOR MANUFACTURING PHOTOVOLTAIC CELL AND PHOTOVOLTAIC CELL
    57.
    发明申请
    METHOD FOR MANUFACTURING PHOTOVOLTAIC CELL AND PHOTOVOLTAIC CELL 审中-公开
    制造光伏电池和光电池的方法

    公开(公告)号:US20100269898A1

    公开(公告)日:2010-10-28

    申请号:US12810060

    申请日:2008-12-24

    IPC分类号: H01L31/02 H01L31/18

    摘要: A method for manufacturing a photovoltaic cell that is provided with an upper electrode that is arranged on the light incoming side and functions as a power extraction electrode, the method including the step of: forming the upper electrode on a substrate by sputtering using a target that contains a zinc oxide-based material, wherein in the step of forming the upper electrode, the sputtering is performed in an atmosphere that contains two or three selected from a group consisting of hydrogen gas, oxygen gas, and water vapor.

    摘要翻译: 一种制造光电池的方法,其具有布置在光入射侧上并用作功率提取电极的上电极,所述方法包括以下步骤:通过使用靶材溅射在基板上形成上电极, 含有氧化锌系材料,其中在形成上部电极的步骤中,在含有选自氢气,氧气和水蒸气中的两种或三种的气氛中进行溅射。

    Methods for enhancing survival and/or proliferation of neural stem cells and neurite extension enhancers therefor pharmaceutical compositions containing neural stem cells assay methods and screening methods
    58.
    发明授权
    Methods for enhancing survival and/or proliferation of neural stem cells and neurite extension enhancers therefor pharmaceutical compositions containing neural stem cells assay methods and screening methods 有权
    用于增强神经干细胞和神经突延伸的生存和/或增殖的方法,其增强剂,含有神经干细胞的药物组合物,测定方法和筛选方法

    公开(公告)号:US07785596B2

    公开(公告)日:2010-08-31

    申请号:US10571277

    申请日:2004-09-08

    摘要: Methods for enhancing survival and/or proliferation of neural stem cells and pharmaceutical compositions containing neural stem cells prepared by such methods, together with methods for assaying factors enhancing survival and/or proliferation of neural stem cells and methods for screening for such factors.Either Galectin-1 is overexpressed in neural stem cells or neural stem cells are cultured in a liquid medium containing Galectin-1. Pharmaceutical compositions containing Galectin-1-overexpressing neural stem cells and pharmaceutical composition containing Galectin-1, prepared by the aforementioned methods, improve higher cerebral functions damaged by cerebral ischemia. Further, by seeding neural stem cells at clonal concentrations and determining whether the seeded neural stem cells are capable of proliferating in an assay medium to be assayed, whether the factor enhances survival and/or proliferation of neural stem cells is assayed and a factor enhancing survival and/or proliferation of neural stem cells are identified using this assay method.

    摘要翻译: 用于增强神经干细胞的存活和/或增殖的方法以及通过这些方法制备的含有神经干细胞的药物组合物,以及用于测定增强神经干细胞的存活和/或增殖的因子的方法以及用于筛选这些因子的方法。 在神经干细胞中Galectin-1过表达或神经干细胞在含有Galectin-1的液体培养基中培养。 含有Galectin-1-过表达神经干细胞的药物组合物和含有通过上述方法制备的Galectin-1的药物组合物改善了由脑缺血损伤的较高脑功能。 此外,通过以克隆浓度接种神经干细胞并确定接种的神经干细胞是否能够在要测定的测定培养基中增殖,测定该因子是否增强神经干细胞的存活和/或增殖,并且提高生存的因子 和/或使用该测定方法鉴定神经干细胞的增殖。

    METHOD FOR PRODUCING A THIN FILM TRANSISTOR AND METHOD FOR FORMING AN ELECTRODE
    59.
    发明申请
    METHOD FOR PRODUCING A THIN FILM TRANSISTOR AND METHOD FOR FORMING AN ELECTRODE 审中-公开
    用于制造薄膜晶体管的方法和形成电极的方法

    公开(公告)号:US20100075475A1

    公开(公告)日:2010-03-25

    申请号:US12630245

    申请日:2009-12-03

    IPC分类号: H01L21/336 H01L21/443

    摘要: An electrode is prevented from being peeled from a substrate or a silicon layer. After the surface of a first copper thin film composed mainly of copper is treated by exposing it to an ammonia gas, a film of silicon nitride is formed on the surface of the first copper thin film by generating a plasma of a raw material gas containing a silane gas and an ammonia gas in an atmosphere in which an object to be processed is placed. Since the surface is preliminarily treated with the ammonia gas, the silane gas is prevented from being diffused into the first copper thin film. Therefore, an electrode constituted by the surface-treated first copper thin film is not peeled from the glass substrate or the silicon layer. In addition, its electric resistance value does not rise.

    摘要翻译: 防止电极从基板或硅层剥离。 在通过将其暴露于氨气来处理主要由铜构成的第一铜薄膜的表面之后,通过生成含有原料气体的原料气体的等离子体,在第一铜薄膜的表面上形成氮化硅膜 在其中放置待加工物体的气氛中的硅烷气体和氨气。 由于表面被氨气预处理,因此防止硅烷气体扩散到第一铜薄膜中。 因此,由表面处理的第一铜薄膜构成的电极不会从玻璃基板或硅层剥离。 此外,其电阻值不上升。

    TOUCH PANEL, AND METHOD FOR MANUFACTURING TOUCH PANEL
    60.
    发明申请
    TOUCH PANEL, AND METHOD FOR MANUFACTURING TOUCH PANEL 有权
    触控面板和制造触摸面板的方法

    公开(公告)号:US20100013787A1

    公开(公告)日:2010-01-21

    申请号:US12567089

    申请日:2009-09-25

    IPC分类号: G06F3/041 H01R43/00

    摘要: A highly durable touch panel is provided. A touch panel according to the present invention includes a deformable flexible panel, and a transparent electrode film containing In2O3 as a primary component and containing Ti is exposed to a surface of a lower electrode film of a display device. Since such a transparent electrode film has a high abrasion resistance as compared to a conventional one (such as, an ITO thin film), the transparent electrode film is neither clouded nor cracked even if the lower electrode film is repeatedly pressed. Therefore, the touch panel according to the present invention is highly durable.

    摘要翻译: 提供高度耐用的触摸面板。 根据本发明的触摸面板包括可变形的柔性面板,并且包含In 2 O 3作为主要成分并且含有Ti的透明电极膜暴露于显示装置的下电极膜的表面。 由于这种透明电极膜与以往的透明电极膜相比具有高耐磨性(例如ITO薄膜),所以即使下反射膜反复被压制,透明电极膜也不会发生糊化或者不破裂。 因此,根据本发明的触摸面板是高度耐用的。