Wiring layer, semiconductor device and liquid crystal display device
    1.
    发明授权
    Wiring layer, semiconductor device and liquid crystal display device 有权
    接线层,半导体器件和液晶显示器件

    公开(公告)号:US08400594B2

    公开(公告)日:2013-03-19

    申请号:US13403145

    申请日:2012-02-23

    IPC分类号: G02F1/1335

    摘要: Provided is an electrode layer and a wiring layer, which are free from peeling from a glass substrate. A wiring layer and a gate electrode layer are constituted by an adhering film which is a thin film made of Cu—Mg—Al formed on a surface of a glass substrate, and a copper film formed on the adhering film. When the adhering film includes Mg in a range of at least 0.5 atom % and at most 5 atom %, and aluminum in a range of at least 5 atom % and at most 15 atom %, assuming that the total number of atoms of copper, magnesium and aluminum is taken as 100 atom %, adhesion of the adhering film to the glass substrate becomes high, and the copper thin film is not peeled from the glass substrate. The wiring layer is electrically connected to a pixel electrode of a liquid crystal display device.

    摘要翻译: 设置有不从玻璃基板剥离的电极层和布线层。 布线层和栅极电极层由在玻璃基板的表面上形成的由Cu-Mg-Al构成的薄膜和形成在粘合膜上的铜膜的粘合膜构成。 当粘合膜包含至少0.5原子%至多5原子%范围内的Mg,至少5原子%至多15原子%的铝时,假设铜的原子总数, 镁和铝为100原子%,粘合膜对玻璃基板的粘附性变高,铜薄膜不会从玻璃基板剥离。 布线层与液晶显示装置的像素电极电连接。

    Wiring layer, semiconductor device, and liquid crystal display device using semiconductor device
    2.
    发明授权
    Wiring layer, semiconductor device, and liquid crystal display device using semiconductor device 有权
    接线层,半导体器件和使用半导体器件的液晶显示器件

    公开(公告)号:US08373832B2

    公开(公告)日:2013-02-12

    申请号:US13503699

    申请日:2010-10-21

    IPC分类号: G02F1/1343

    摘要: An electrode film, which is not peeled off from an oxide thin film and in which a copper atom does not diffuse into the oxide thin film, is provided. A wiring layer is composed of a high-adhesion barrier film 37, which is a thin film of Cu—Mg—Al and a copper thin film 38; and the high-adhesion barrier film 37 is brought into contact with the oxide thin film. When a total number of atoms of copper, magnesium, and aluminum is set to 100 at %, if the high-adhesion barrier film 37 contains magnesium in a range of between 0.5 at % and 5 at and aluminum in a range of between 5 at % and 15 at %, then wiring layers 50a, 50b, can be obtained, whereby the adhesion and the barrier property are compatible with each other, adherence is strong, and a copper atom does not diffuse.

    摘要翻译: 提供了未从氧化物薄膜剥离并且铜原子不扩散到氧化物薄膜中的电极膜。 布线层由作为Cu-Mg-Al的薄膜和铜薄膜38的高粘合阻挡膜37构成, 并使高附着阻挡膜37与氧化物薄膜接触。 当铜,镁和铝的原子总数设定为100原子%时,如果高粘合阻挡膜37含有0.5at%至5at的范围内的镁,并且在5at %和15原子%,然后可以获得布线层50a,50b,由此粘合性和阻隔性彼此相容,粘附性强,铜原子不扩散。

    WIRING LAYER, SEMICONDUCTOR DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE USING SEMICONDUCTOR DEVICE
    3.
    发明申请
    WIRING LAYER, SEMICONDUCTOR DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE USING SEMICONDUCTOR DEVICE 有权
    接线层,半导体器件和使用半导体器件的液晶显示器件

    公开(公告)号:US20120262659A1

    公开(公告)日:2012-10-18

    申请号:US13503699

    申请日:2010-10-21

    IPC分类号: G02F1/1343 H05K1/09 H01L29/78

    摘要: An electrode film, which is not peeled off from an oxide thin film and in which a copper atom does not diffuse into the oxide thin film, is provided. A wiring layer is composed of a high-adhesion barrier film 37, which is a thin film of Cu—Mg—Al and a copper thin film 38; and the high-adhesion barrier film 37 is brought into contact with the oxide thin film. When a total number of atoms of copper, magnesium, and aluminum is set to 100 at %, if the high-adhesion barrier film 37 contains magnesium in a range of between 0.5 at % and 5 at and aluminum in a range of between 5 at % and 15 at %, then wiring layers 50a, 50b, can be obtained, whereby the adhesion and the barrier property are compatible with each other, adherence is strong, and a copper atom does not diffuse,

    摘要翻译: 提供了未从氧化物薄膜剥离并且铜原子不扩散到氧化物薄膜中的电极膜。 布线层由作为Cu-Mg-Al的薄膜和铜薄膜38的高粘合阻挡膜37构成, 并使高附着阻挡膜37与氧化物薄膜接触。 当铜,镁和铝的原子总数设定为100原子%时,如果高粘合阻挡膜37含有0.5at%至5at的范围内的镁,并且在5at %和15原子%,然后可以获得布线层50a,50b,由此粘附性和阻隔性彼此相容,粘附性强,铜原子不扩散,

    METHOD FOR PRODUCING ELECTRONIC DEVICE, ELECTRONIC DEVICE, SEMICONDUCTOR DEVICE, AND TRANSISTOR
    4.
    发明申请
    METHOD FOR PRODUCING ELECTRONIC DEVICE, ELECTRONIC DEVICE, SEMICONDUCTOR DEVICE, AND TRANSISTOR 审中-公开
    用于制造电子器件的方法,电子器件,半导体器件和晶体管

    公开(公告)号:US20120119269A1

    公开(公告)日:2012-05-17

    申请号:US13310056

    申请日:2011-12-02

    IPC分类号: H01L29/78 H01L23/48 B05D5/12

    摘要: A technique is provided which prevents an increase in the resistivity of a conductive wiring film. A conductive layer containing Ca in a content rate of 0.3 atom % or more is provided on the surfaces of each of conductive wiring films which are to be exposed to a gas containing a Si atom in a chemical structure at a high temperature. When a gate insulating layer or a protection film containing Si is formed on the surface of the conductive layer, the Si atoms do not diffuse into the conductive layer and a resistance value does not increase, even if the conductive layer is exposed to the raw material gas containing Si in a chemical structure . Further, a CuCaO layer can be formed as an adhesive layer for preventing Si diffusion from a glass substrate or a silicon semiconductor.

    摘要翻译: 提供了防止导电布线膜的电阻率增加的技术。 在高温化学结构中暴露于含有Si原子的气体的导电布线膜的表面上,设置含有0.3原子%以上的Ca的导电层。 当在导电层的表面上形成栅绝缘层或含有Si的保护膜时,即使导电层暴露于原料,Si原子也不会扩散到导电层中,并且电阻值不增加 含有化学结构中的Si的气体。 此外,CuCaO层可以形成为用于防止Si从玻璃衬底或硅半导体扩散的粘合剂层。

    Sputtering apparatus and film-forming processes
    5.
    发明授权
    Sputtering apparatus and film-forming processes 有权
    溅射装置和成膜工艺

    公开(公告)号:US08585872B2

    公开(公告)日:2013-11-19

    申请号:US12010585

    申请日:2008-01-28

    IPC分类号: C23C14/35

    摘要: A sputtering apparatus for ensuring high target utilization efficiency is provided. The sputtering apparatus 1 of the present invention comprises a moving means 28a, 28b so that first and second magnet members 23a, 23b can be moved by the moving means 28a, 28b in planes parallel to the surfaces of first and second targets 21a, 21b. When the first and second magnet members 23a, 23b move, magnetic field lines as well as deeply eroded regions on the surfaces of the first and second targets 21a, 21b also move, whereby large areas on the surfaces of the first and second targets 21a, 21b are sputtered.

    摘要翻译: 提供了一种用于确保高目标利用效率的溅射装置。 本发明的溅射装置1包括移动装置28a,28b,使得第一和第二磁体构件23a,23b可以通过移动装置28a,28b在平行于第一和第二目标21a,21b的表面的平面中移动。 当第一和第二磁体构件23a,23b移动时,第一和第二目标21a,21b的表面上的磁场线以及深蚀的区域也移动,从而第一和第二目标21a, 21b被溅射。

    Touch panel
    6.
    发明申请
    Touch panel 有权
    触控面板

    公开(公告)号:US20110298738A1

    公开(公告)日:2011-12-08

    申请号:US13137212

    申请日:2011-07-28

    IPC分类号: G06F3/041

    CPC分类号: G06F3/045

    摘要: A touch panel having high durability is provided. Either one or both of a display device and a flexible panel have island-shaped protective bodies formed on surfaces of electrode layers (upper electrode layer, lower electrode layer), and a transparent conductive film is exposed between the protective bodies. Since the protective bodies protrude highly from the surface of the transparent conductive film, when the flexible panel is pressed and the upper electrode and the lower electrode layer are brought into contact, a load to be applied to the transparent conductive film is reduced by the protective bodies, so that the transparent conductive film is not broken.

    摘要翻译: 提供了具有高耐久性的触摸面板。 显示装置和柔性面板中的任一个或两者具有形成在电极层(上电极层,下电极层)的表面上的岛状保护体,并且在保护体之间露出透明导电膜。 由于保护体从透明导电膜的表面突出高度突出,当按压柔性面板并使上部电极和下部电极层接触时,通过保护性 使透明导电膜不破裂。

    METHOD FOR PRODUCING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR
    7.
    发明申请
    METHOD FOR PRODUCING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR 有权
    生产薄膜晶体管和薄膜晶体管的方法

    公开(公告)号:US20110068338A1

    公开(公告)日:2011-03-24

    申请号:US12881652

    申请日:2010-09-14

    IPC分类号: H01L29/786 H01L21/336

    摘要: A metallic wiring film, which is not exfoliated even when exposed to plasma of hydrogen, is provided. A metallic wiring film is constituted by an adhesion layer in which Al is added to copper and a metallic low-resistance layer which is disposed on the adhesion layer and made of pure copper. When a copper alloy including Al and oxygen are included in the adhesion layer and a source electrode and a drain electrode are formed from it, copper does not precipitate at an interface between the adhesion layer and the silicon layer even when being exposed to the hydrogen plasma, which prevents the occurrence of exfoliation between the adhesion layer and the silicon layer. If the amount of Al increases, since widths of the adhesion layer and the metallic low-resistance layer largely differ after etching, the maximum addition amount for permitting the etching to be performed is the upper limit.

    摘要翻译: 提供即使暴露于氢等离子体时也不会剥离的金属布线膜。 金属布线膜由其中添加有Al的粘合层和设置在粘合层上并由纯铜制成的金属低电阻层构成。 当包含Al和氧的铜合金包括在粘合层中并且由其形成源电极和漏电极时,即使当暴露于氢等离子体时,铜也不会在粘附层和硅层之间的界面处析出 ,其防止粘附层和硅层之间的剥离的发生。 如果Al的量增加,由于粘合层和金属低电阻层的宽度在蚀刻之后大大不同,所以允许进行蚀刻的最大添加量是上限。

    TOUCH PANEL AND METHOD FOR MANUFACTURING TOUCH PANEL
    8.
    发明申请
    TOUCH PANEL AND METHOD FOR MANUFACTURING TOUCH PANEL 有权
    触控面板和制造触控面板的方法

    公开(公告)号:US20100295811A1

    公开(公告)日:2010-11-25

    申请号:US12814039

    申请日:2010-06-11

    IPC分类号: G06F3/041

    CPC分类号: G06F3/045

    摘要: A touch panel having high durability is provided. Either one or both of a display device and a flexible panel have island-shaped protective bodies formed on surfaces of electrode layers (upper electrode layer, lower electrode layer), and a transparent conductive film is exposed between the protective bodies. Since the protective bodies protrude highly from the surface of the transparent conductive film, when the flexible panel is pressed and the upper electrode and the lower electrode layer are brought into contact, a load to be applied to the transparent conductive film is reduced by the protective bodies, so that the transparent conductive film is not broken.

    摘要翻译: 提供了具有高耐久性的触摸面板。 显示装置和柔性面板中的任一个或两者具有形成在电极层(上电极层,下电极层)的表面上的岛状保护体,并且在保护体之间露出透明导电膜。 由于保护体从透明导电膜的表面突出高度突出,当按压柔性面板并使上部电极和下部电极层接触时,通过保护性 使透明导电膜不破裂。