公开(公告)号：US20220077120A1

公开(公告)日：2022-03-10

申请号：US17174934

申请日：2021-02-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seogwoo HONG ,  Junsik HWANG ,  Kyungwook HWANG

IPC: H01L25/075 ,  H01L27/12 ,  H01L33/50 ,  H01L33/62

Abstract: The present disclosure provides a micro-light-emitting diode display apparatus and a method of manufacturing the same. Provided is a micro-light-emitting diode (LED) display apparatus including a plurality of pixels, the micro-LED display apparatus including a driving circuit substrate, a first electrode provided on the driving circuit substrate, one or more micro-light-emitting diodes (LEDs) provided on the first electrode, an insulating layer provided on the one or more micro-LEDs, a via pattern provided in the insulating layer, electrical contacts provided in the via pattern, and a second electrode provided on the electrical contacts, wherein the via pattern exposes a portion of the one or more micro-LEDs.

公开(公告)号：US20210193733A1

公开(公告)日：2021-06-24

申请号：US17191619

申请日：2021-03-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook HWANG ,  Hoyoung AHN ,  Junhee CHOI ,  Kiho KONG ,  Joohun HAN

IPC: H01L27/15 ,  H01L33/40 ,  H01L33/58 ,  H01L33/46 ,  H01L33/50 ,  H01L33/42

Abstract: A display device includes a substrate, an emissive layer; a plurality of color converting layers that share the emissive layer, a barrier arranged on the emissive layer between the plurality of color converting layers, a first insulating layer provided between the plurality of color converting layers and the emissive layer and a second insulating layer provided between the first insulating layer and the plurality of color converting layers. The barrier spatially separates the plurality of color converting layers from each other and the first insulating layer has a plurality of first openings respectively corresponding to the plurality of color converting layers.

公开(公告)号：US20210134770A1

公开(公告)日：2021-05-06

申请号：US17090077

申请日：2020-11-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook HWANG ,  Junsik HWANG ,  Sungwoo HWANG

IPC: H01L25/075 ,  H01L23/00

Abstract: A method of transferring a micro light emitting diode (LED) to a pixel array panel includes transferring the micro LED by spraying using an inkjet method, wherein the micro LED comprises an active layer comprising a first portion emitting light in a first direction and a second portion emitting the light in a second direction different from the first direction.

公开(公告)号：US20250089425A1

公开(公告)日：2025-03-13

申请号：US18883770

申请日：2024-09-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook HWANG ,  Jungwoon Shin ,  Keunsik Lee ,  Junsik Hwang ,  Hakyeol Kim ,  Sanghoon Song ,  Eungyeong Lee ,  Dongho Kim ,  Youngtek Oh

IPC: H01L33/62 ,  H01L25/075 ,  H01L33/00

Abstract: Provided is a display apparatus including a display substrate, a first pad and a second pad, a first electrode on the first pad, a multilayer semiconductor layer including a first-type semiconductor layer, an active layer, and a second-type semiconductor layer on the first electrode, an insulating layer on the display substrate and adjacent to the first pad, the first electrode, and the multilayer semiconductor layer, a height of the insulating layer being lower than an upper surface of the multilayer semiconductor layer, and a second electrode on an upper surface of the multilayer semiconductor layer, an exposed lateral surface of the multilayer semiconductor layer, and a surface of the insulating layer, the second electrode connecting the second-type semiconductor layer and the second pad, an angle between the exposed lateral surface of the multilayer semiconductor layer and an upper surface of the insulating layer is 90 degrees or more.

公开(公告)号：US20250031508A1

公开(公告)日：2025-01-23

申请号：US18908252

申请日：2024-10-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junsik HWANG ,  Seogwoo HONG ,  Kyungwook HWANG

IPC: H01L33/62 ,  H01L25/075 ,  H01L27/12

Abstract: A micro light emitting device, a display apparatus including the same, and a method of manufacturing the micro light emitting device are disclosed. The micro light emitting device includes a first type semiconductor layer; a light emitting layer provided on the first type semiconductor layer; a second type semiconductor layer provided on the light emitting layer; one or more first type electrodes provided on the second type semiconductor layer; one or more second type electrodes provided on the second type semiconductor layer and spaced apart from the one or more first type electrodes; and a bonding spread prevention portion provided between the one or more first type electrodes and the one or more second type electrodes.

公开(公告)号：US20240234384A1

公开(公告)日：2024-07-11

申请号：US18402416

申请日：2024-01-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook HWANG ,  Youngtek OH ,  Dongkyun KIM ,  Dongho KIM ,  Joonyong PARK ,  Sanghoon SONG ,  Minchul YU ,  Junsik HWANG

IPC: H01L25/075

CPC classification number: H01L25/0753

Abstract: A method of transferring electronic chips includes attaching, to a relay substrate, the electronic chips arranged on a base substrate, separating the electronic chips from the base substrate, wetting a target substrate using a solvent, transferring, to the target substrate, the electronic chips that are attached to the relay substrate, pressing the relay substrate in a thickness direction of the target substrate, and drying the target substrate.

公开(公告)号：US20240178195A1

公开(公告)日：2024-05-30

申请号：US17793145

申请日：2022-01-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junsik HWANG ,  Seogwoo HONG ,  Kyungwook HWANG ,  Hyunjoon KIM ,  Joonyong PARK

IPC: H01L25/075 ,  H01L25/16 ,  H01L33/50

CPC classification number: H01L25/0753 ,  H01L25/167 ,  H01L33/50

Abstract: According to an aspect of an embodiment, provided is a micro semiconductor chip transferring substrate including: a mold including a plurality of recesses formed to be recessed in a certain depth from an upper surface; and a surface energy reduction pattern formed in region between the plurality of recesses, on the upper surface, the surface energy reduction pattern including a plurality of uneven patterns. When the micro semiconductor chips are aligned by a wet alignment method, by such surface energy reduction pattern, sliding of the micro semiconductor chips toward the inside of the recesses may be improved.

公开(公告)号：US20230361251A1

公开(公告)日：2023-11-09

申请号：US17900193

申请日：2022-08-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minchul YU ,  Seogwoo HONG ,  Kyungwook HWANG ,  Junsik HWANG ,  Dongkyun KIM ,  Hyunjoon KIM

IPC: H01L33/44 ,  H01L33/00

CPC classification number: H01L33/44 ,  H01L33/005

Abstract: Provided are a semiconductor device including a passivation layer and a method of fabricating an electronic apparatus including the semiconductor device. The semiconductor device includes a semiconductor device layer including at least one electrode provided at an upper portion thereof and a passivation layer at least partially covering the at least one electrode.

公开(公告)号：US20230215979A1

公开(公告)日：2023-07-06

申请号：US17847637

申请日：2022-06-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunjoon KIM ,  Dongkyun KIM ,  Dongho KIM ,  Joonyong PARK ,  Seogwoo HONG ,  Kyungwook HWANG ,  Junsik HWANG

IPC: H01L33/38 ,  H01L33/44 ,  H01L25/075 ,  H01L27/15

CPC classification number: H01L33/382 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/44

Abstract: A micro light-emitting element includes a first conductivity type semiconductor layer including a lower surface on which an uneven pattern is formed, an active layer provided on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer provided on the active layer, at least one electrode provided on the second conductivity type semiconductor layer, and a transparent coating layer including a first surface covering the lower surface of the first conductivity type semiconductor layer, and a second surface facing the first surface and having a second surface roughness that is less than a first surface roughness of the lower surface of the first conductivity type semiconductor layer.

公开(公告)号：US20230207725A1

公开(公告)日：2023-06-29

申请号：US18179003

申请日：2023-03-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junsik HWANG ,  Kyungwook HWANG

IPC: H01L33/00 ,  H01L33/24 ,  H01L33/40 ,  H01L33/38 ,  H01L33/44 ,  H01L25/075

CPC classification number: H01L33/0093 ,  H01L33/24 ,  H01L33/405 ,  H01L33/385 ,  H01L33/44 ,  H01L25/0753 ,  H01L33/007 ,  H01L2933/0016 ,  H01L33/32

Abstract: A light-emitting diode (LED) device includes a light-emitting layer having a core-shell structure that comprises a first semiconductor layer, an active layer, and a second semiconductor layer; a passivation layer formed to cover at least a portion of a side surface and a portion of an upper surface of the second semiconductor layer; a first electrode formed on a portion of the passivation layer that is located on a side surface of the light-emitting layer, the first electrode electrically connected to the first semiconductor layer and including a reflective material; and a second electrode formed on a portion of the passivation layer that is located on an upper surface of the light-emitting layer, the second electrode contacting a portion of the upper surface of the second semiconductor layer that is exposed.