公开(公告)号：US20250089425A1

公开(公告)日：2025-03-13

申请号：US18883770

申请日：2024-09-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook HWANG ,  Jungwoon Shin ,  Keunsik Lee ,  Junsik Hwang ,  Hakyeol Kim ,  Sanghoon Song ,  Eungyeong Lee ,  Dongho Kim ,  Youngtek Oh

IPC: H01L33/62 ,  H01L25/075 ,  H01L33/00

Abstract: Provided is a display apparatus including a display substrate, a first pad and a second pad, a first electrode on the first pad, a multilayer semiconductor layer including a first-type semiconductor layer, an active layer, and a second-type semiconductor layer on the first electrode, an insulating layer on the display substrate and adjacent to the first pad, the first electrode, and the multilayer semiconductor layer, a height of the insulating layer being lower than an upper surface of the multilayer semiconductor layer, and a second electrode on an upper surface of the multilayer semiconductor layer, an exposed lateral surface of the multilayer semiconductor layer, and a surface of the insulating layer, the second electrode connecting the second-type semiconductor layer and the second pad, an angle between the exposed lateral surface of the multilayer semiconductor layer and an upper surface of the insulating layer is 90 degrees or more.

公开(公告)号：US09882112B2

公开(公告)日：2018-01-30

申请号：US15388668

申请日：2016-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeokshin Kwon ,  Youngtek Oh ,  Insu Jeon

IPC: H01L21/06 ,  H01L39/22 ,  G06N99/00 ,  H01L27/18

CPC classification number: H01L39/223 ,  G06N99/002 ,  H01L27/18

Abstract: Multi-qubit devices and quantum computers including the same are provided. The multi-qubit device may include a first layer including a plurality of qubits; a second layer that is disposed on the first layer, and comprises a plurality of flux generating elements that apply flux to the plurality of qubits, a plurality of wire patterns that provide current to the plurality of flux generating elements, and a plurality of plugs that are disposed perpendicular to the plurality of flux generating elements and the plurality of wire patterns and interconnect the plurality of flux generating elements and the plurality of wire patterns. Each of the plurality of flux generating elements may be integrated with a corresponding one of the plurality of wire patterns and a corresponding one of the plurality of plugs.

公开(公告)号：US12272402B2

公开(公告)日：2025-04-08

申请号：US17708362

申请日：2022-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun Lee ,  Taein Kim ,  Youngtek Oh ,  Hyeonjin Shin ,  Changseok Lee

IPC: G11C16/04 ,  H10B41/20 ,  H10B41/35 ,  H10B43/20 ,  H10B43/35

Abstract: Provided is a vertical nonvolatile memory device in which a thickness of one memory cell is reduced to reduce an entire thickness of a memory cell string and increase the number of stacked memory cells. The nonvolatile memory device includes a plurality of memory cell strings. Each of the memory cell strings may include a plurality of insulating spacers each extending in a first direction, a plurality of gate electrodes each extending in the first direction and alternately arranged with the plurality of insulating spacers in a second direction perpendicular to the first direction, and a plurality of contacts respectively arranged to contact a side surface of the plurality of gate electrodes respectively corresponding to the plurality of contacts.

公开(公告)号：US20240234180A1

公开(公告)日：2024-07-11

申请号：US18409400

申请日：2024-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungwook HWANG ,  Youngtek Oh ,  Dongkyun Kim ,  Junsik Hwang ,  Minchul Yu

IPC: H01L21/67

CPC classification number: H01L21/67132

Abstract: Provided are a wiper for transferring a micro semiconductor chip and an apparatus for collecting a micro semiconductor chip. The wiper includes an absorber for absorbing a solution used to wet transfer a micro semiconductor chip, and a protective layer coated on the absorber.

公开(公告)号：US11289112B2

公开(公告)日：2022-03-29

申请号：US16715721

申请日：2019-12-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Boreum Jeong ,  Wontaek Seo ,  Youngtek Oh ,  Yunju Yu ,  Moonil Jung

IPC: G10L25/51 ,  G10L15/22 ,  G10L21/0272

Abstract: Provided is a sound source tracking apparatuses including a vibration unit including vibrators configured to vibrate in response to an ambient sound, the ambient sound including individual sounds, and a processor configured to separate the ambient sound into individual sounds, to determine a target individual sound having a target tone color among the individual sounds, and to obtain a relative location of a target sound source that generates the target individual sound.

公开(公告)号：US12193235B2

公开(公告)日：2025-01-07

申请号：US17537984

申请日：2021-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngtek Oh ,  Hyeyoung Kwon ,  Taein Kim ,  Gukhyon Yon ,  Minhyun Lee

IPC: H10B43/27

Abstract: A nonvolatile memory device includes a channel layer, a plurality of gate electrodes and a plurality of separation layers spaced apart from the channel layer and alternately arranged, a charge trap layer between the gate electrodes in the channel layer, and a charge blocking layer between the charge trap layer and the gate electrode.

公开(公告)号：US11799010B2

公开(公告)日：2023-10-24

申请号：US17227456

申请日：2021-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngtek Oh ,  Jinwook Jung ,  Seunggeol Nam ,  Wontaek Seo ,  Insu Jeon

IPC: H01L29/45

CPC classification number: H01L29/45

Abstract: Provided are transistors including an electride electrode. The transistor includes a substrate, a source region and a drain region doped with ions of different polarity from the substrate in a surface of the substrate, a source electrode and a drain electrode including an electride material on the source region and the drain region, a gate insulating layer surrounding the source electrode and a drain electrode on the substrate, and a gate electrode between the source electrode and the drain electrode on the substrate. The source electrode and the drain electrode have an ohmic contact with the substrate.

公开(公告)号：US11004949B2

公开(公告)日：2021-05-11

申请号：US16238706

申请日：2019-01-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngtek Oh ,  Jinwook Jung ,  Seunggeol Nam ,  Wontaek Seo ,  Insu Jeon

IPC: H01L31/119 ,  H01L29/45

Abstract: Provided are transistors including an electride electrode. The transistor includes a substrate, a source region and a drain region doped with ions of different polarity from the substrate in a surface of the substrate, a source electrode and a drain electrode including an electride material on the source region and the drain region, a gate insulating layer surrounding the source electrode and a drain electrode on the substrate, and a gate electrode between the source electrode and the drain electrode on the substrate. The source electrode and the drain electrode have an ohmic contact with the substrate.

公开(公告)号：US20200044041A1

公开(公告)日：2020-02-06

申请号：US16238706

申请日：2019-01-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngtek Oh ,  Jinwook Jung ,  Seunggeol Nam ,  Wontaek Seo ,  Insu Jeon

IPC: H01L29/45

Abstract: Provided are transistors including an electride electrode. The transistor includes a substrate, a source region and a drain region doped with ions of different polarity from the substrate in a surface of the substrate, a source electrode and a drain electrode including an electride material on the source region and the drain region, a gate insulating layer surrounding the source electrode and a drain electrode on the substrate, and a gate electrode between the source electrode and the drain electrode on the substrate. The source electrode and the drain electrode have an ohmic contact with the substrate.

公开(公告)号：US11245021B2

公开(公告)日：2022-02-08

申请号：US17028205

申请日：2020-09-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngtek Oh ,  Jinwook Jung ,  Hyeokshin Kwon ,  Wontaek Seo ,  Insu Jeon

IPC: H01L29/45 ,  H01L29/786 ,  H01L29/16

Abstract: A silicene electronic device includes a silicene material layer. The silicene material layer of the silicene electronic device has a 2D honeycomb structure of silicon atoms, is doped with at least one material of Group I, Group II, Group XVI, and Group XVII, and includes at least one of a p-type dopant region doped with a p-type dopant and an n-type dopant region doped with an n-type dopant. An electrode material layer including a material having a work function lower than the electron affinity of silicene is formed on the silicene material layer.