摘要:
A method of transferring a micro semiconductor chip and a transferring structure are provided. The method includes providing a plurality of base transferring substrates each including a plurality of grooves, aligning the plurality of base transferring substrates on a first substrate, aligning the plurality of base transferring substrates on a second substrate, providing a target transferring structure by transferring micro semiconductor chips to the base transferring substrates of the first substrate, and providing a preliminary transferring structure by transferring micro semiconductor chips to the base transferring substrates of the second substrate.
摘要:
Provided is a micro light emitting semiconductor device including a first semiconductor layer, a light emitting layer provided on the first semiconductor layer, a second semiconductor layer provided on the light emitting layer, and a color conversion layer provided on the second semiconductor layer, the color conversion layer including a porous layer that includes quantum dots, wherein a doping type of the second semiconductor layer is different from a doping type of the color conversion layer.
摘要:
Provided is a light-emitting device including a body including a first semiconductor layer, an active layer, and a second semiconductor layer, a first electrode and a second electrode provided on a first surface of the body, the first electrode and the second electrode being in contact with the first semiconductor layer and the second semiconductor layer, respectively, and a third electrode and a fourth electrode provided on a second surface of the body, the third electrode and the fourth electrode being in contact with the first semiconductor layer and the second semiconductor layer, respectively.
摘要:
Provided are a method of manufacturing a display apparatus and the display apparatus. The method includes forming an emissive layer and a driving layer on a first area of a substrate, forming an exposure line electrically connected to the driving layer, on a second area of the substrate, and forming a color conversion layer on the driving layer by emitting light from the emissive layer using the exposure line.
摘要:
A method of aligning micro LEDs and a method of manufacturing a micro LED display using the same are provided. The method of aligning micro LEDs includes providing micro LEDs, each having a first surface that has a first maximum width and a second surface opposite to the first surface and has a second maximum width that is greater than the first maximum width, providing a transfer substrate including a transfer mold that has an array of openings, each of the openings being configured to accommodate the first surface of a corresponding micro LED and not accommodate the second surface of the corresponding micro LED and aligning the micro LEDs in one direction in the openings of the transfer mold by inserting the micro LEDs into the openings of the transfer mold so that the first surface of each of the micro LEDs is positioned within a corresponding opening.
摘要:
Provided are a light-emitting diode (LED) device, a method of manufacturing the LED device, and a display apparatus including the LED device. The LED device includes a light-emitting layer having a core-shell structure, a passivation layer provided to cover a portion of a top surface of the first semiconductor layer, a first electrode provided on the light-emitting layer, and a second electrode provided under the light-emitting layer. The light-emitting layer includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first electrode is provided to contact the first semiconductor layer, and the second electrode is provided to contact the second semiconductor layer.
摘要:
A semiconductor light-emitting device includes an active layer and a first semiconductor layer sequentially stacked on a second semiconductor layer and including a plurality of contact holes exposing portions of the first semiconductor layer, a plurality of first electrodes on the exposed portions of the first semiconductor layer, a second electrode on the second semiconductor layer adjacent to the contact holes, a first insulating layer on the second electrode in the first region defining at least a portion of the contact holes and insulating the plurality of first electrodes from the active layer and the second semiconductor layer, a first bonding layer on the first insulating layer, filling the contact holes and connected to the first electrodes, a second bonding layer on the second electrode, and a conductive layer including first and second portions contacting a lower surface of the first bonding layer and the second bonding layer, respectively.
摘要:
Disclosed are a color conversion structure, a display apparatus, and a method for manufacturing the color conversion structure. The color conversion structure includes a base, a photonic crystal structure provided on the base, and quantum dots included in the photonic crystal structure. The color conversion structure has a transferable structure.
摘要:
A driving circuit board includes a driving circuit board includes: a plurality of driving electrode regions on a surface of the driving circuit board; a plurality of driving electrodes symmetrically arranged on the plurality of driving electrode regions; and a driving circuit electrically connected to at least one of the plurality of driving electrodes, wherein the plurality of driving electrodes include at least one dummy electrode that is not connected to the driving circuit.
摘要:
Provided is a display device including a driving substrate, a barrier layer disposed on an upper surface of the driving substrate and including a plurality of recesses, a micro-semiconductor light emitting device disposed in each of the plurality of recesses, and a side reflective structure disposed in the barrier layer and provided adjacent to a sidewall of each of the plurality of recesses.