公开(公告)号：US20250022980A1

公开(公告)日：2025-01-16

申请号：US18770345

申请日：2024-07-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghoon SONG ,  Kyungwook HWANG ,  Junsik HWANG ,  Dongho KIM ,  Joonyong PARK ,  Youngtek OH ,  Minchul YU

IPC: H01L33/00

Abstract: A chemical lift-off device includes a first chamber including a first bath containing a first chemical solution and configured to receive a semiconductor light-emitting device on a substrate, such that the semiconductor light-emitting device is partially separated from the substrate by being submerged in the first chemical solution, a cleaning bath containing deionized water and configured to receive the semiconductor light-emitting device that is partially separated from the substrate, and a second chamber including a separator including a chemical solution sprayer configured to spray a second chemical solution toward the semiconductor light-emitting device that is partially separated from the substrate, such that the semiconductor light-emitting device is completely separated from the substrate by being sprayed with the second chemical solution and a recovery assembly provided at a lower portion of the separator and configured to recover the semiconductor light-emitting device that is completely separated from the substrate.

公开(公告)号：US20240234219A1

公开(公告)日：2024-07-11

申请号：US18409369

申请日：2024-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngtek OH ,  Joonyong PARK ,  Kyungwook HWANG ,  Dongkyun KIM ,  Dongho KIM ,  Sanghoon SONG ,  Minchul YU ,  Junsik HWANG

IPC: H01L21/66 ,  H01L21/683 ,  H01L25/16

CPC classification number: H01L22/22 ,  H01L21/6835 ,  H01L25/167 ,  H01L2221/68368

Abstract: A method of transferring a micro semiconductor chip and a transferring structure are provided. The method includes providing a plurality of base transferring substrates each including a plurality of grooves, aligning the plurality of base transferring substrates on a first substrate, aligning the plurality of base transferring substrates on a second substrate, providing a target transferring structure by transferring micro semiconductor chips to the base transferring substrates of the first substrate, and providing a preliminary transferring structure by transferring micro semiconductor chips to the base transferring substrates of the second substrate.

公开(公告)号：US20230170448A1

公开(公告)日：2023-06-01

申请号：US17984462

申请日：2022-11-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongho KIM ,  Kyungwook HWANG ,  Joonyong PARK ,  Junsik HWANG

IPC: H01L33/50 ,  H01L33/32 ,  H01L25/075 ,  H01L33/10 ,  H01L33/00

CPC classification number: H01L33/505 ,  H01L25/0753 ,  H01L33/10 ,  H01L33/32 ,  H01L33/0075 ,  H01L2933/0041

Abstract: Provided is a micro light emitting semiconductor device including a first semiconductor layer, a light emitting layer provided on the first semiconductor layer, a second semiconductor layer provided on the light emitting layer, and a color conversion layer provided on the second semiconductor layer, the color conversion layer including a porous layer that includes quantum dots, wherein a doping type of the second semiconductor layer is different from a doping type of the color conversion layer.

公开(公告)号：US20220246801A1

公开(公告)日：2022-08-04

申请号：US17519754

申请日：2021-11-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seogwoo HONG ,  Hyunjoon KIM ,  Joonyong PARK ,  Kyungwook HWANG ,  Junsik HWANG

IPC: H01L33/38 ,  H01L27/15

Abstract: Provided is a light-emitting device including a body including a first semiconductor layer, an active layer, and a second semiconductor layer, a first electrode and a second electrode provided on a first surface of the body, the first electrode and the second electrode being in contact with the first semiconductor layer and the second semiconductor layer, respectively, and a third electrode and a fourth electrode provided on a second surface of the body, the third electrode and the fourth electrode being in contact with the first semiconductor layer and the second semiconductor layer, respectively.

公开(公告)号：US20220131030A1

公开(公告)日：2022-04-28

申请号：US17569217

申请日：2022-01-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kiho KONG ,  Junhee CHOI ,  Deukseok CHUNG ,  Junsik HWANG

IPC: H01L33/00 ,  G09G3/32 ,  H01L33/50 ,  H01L33/62

Abstract: Provided are a method of manufacturing a display apparatus and the display apparatus. The method includes forming an emissive layer and a driving layer on a first area of a substrate, forming an exposure line electrically connected to the driving layer, on a second area of the substrate, and forming a color conversion layer on the driving layer by emitting light from the emissive layer using the exposure line.

公开(公告)号：US20210184070A1

公开(公告)日：2021-06-17

申请号：US16883363

申请日：2020-05-26

Applicant: SAMSUNG ELECTRONICS CO., LTD ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Kyungwook HWANG ,  Jungel RYU ,  Sungjin KANG ,  Jongmyeong KIM ,  Jehong OH ,  Euijoon YOON ,  Seungmin LEE ,  Junsik HWANG

IPC: H01L33/00 ,  H01L27/15

Abstract: A method of aligning micro LEDs and a method of manufacturing a micro LED display using the same are provided. The method of aligning micro LEDs includes providing micro LEDs, each having a first surface that has a first maximum width and a second surface opposite to the first surface and has a second maximum width that is greater than the first maximum width, providing a transfer substrate including a transfer mold that has an array of openings, each of the openings being configured to accommodate the first surface of a corresponding micro LED and not accommodate the second surface of the corresponding micro LED and aligning the micro LEDs in one direction in the openings of the transfer mold by inserting the micro LEDs into the openings of the transfer mold so that the first surface of each of the micro LEDs is positioned within a corresponding opening.

公开(公告)号：US20210159361A1

公开(公告)日：2021-05-27

申请号：US16845457

申请日：2020-04-10

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Kyungwook HWANG ,  Sungjin KANG ,  Euijoon YOON ,  Junsik HWANG ,  Jongmyeong KIM ,  Jehong OH ,  Jungel RYU ,  Seungmin LEE

IPC: H01L33/24 ,  H01L33/44 ,  H01L33/38 ,  H01L33/00 ,  H01L33/22 ,  H01L25/075

Abstract: Provided are a light-emitting diode (LED) device, a method of manufacturing the LED device, and a display apparatus including the LED device. The LED device includes a light-emitting layer having a core-shell structure, a passivation layer provided to cover a portion of a top surface of the first semiconductor layer, a first electrode provided on the light-emitting layer, and a second electrode provided under the light-emitting layer. The light-emitting layer includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first electrode is provided to contact the first semiconductor layer, and the second electrode is provided to contact the second semiconductor layer.

公开(公告)号：US20160104814A1

公开(公告)日：2016-04-14

申请号：US14673988

申请日：2015-03-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junsik HWANG ,  Suhee CHAE

IPC: H01L33/22 ,  H01L33/38 ,  H01L33/32 ,  H01L33/62 ,  H01L33/06 ,  H01L33/40 ,  H01L33/12

CPC classification number: H01L33/22 ,  H01L33/12 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L33/486 ,  H01L33/62

Abstract: A semiconductor light-emitting device includes an active layer and a first semiconductor layer sequentially stacked on a second semiconductor layer and including a plurality of contact holes exposing portions of the first semiconductor layer, a plurality of first electrodes on the exposed portions of the first semiconductor layer, a second electrode on the second semiconductor layer adjacent to the contact holes, a first insulating layer on the second electrode in the first region defining at least a portion of the contact holes and insulating the plurality of first electrodes from the active layer and the second semiconductor layer, a first bonding layer on the first insulating layer, filling the contact holes and connected to the first electrodes, a second bonding layer on the second electrode, and a conductive layer including first and second portions contacting a lower surface of the first bonding layer and the second bonding layer, respectively.

Abstract translation: 半导体发光器件包括有源层和顺序层叠在第二半导体层上的第一半导体层，并且包括暴露第一半导体层的部分的多个接触孔，在第一半导体的暴露部分上的多个第一电极 层，与所述接触孔相邻的所述第二半导体层上的第二电极，所述第一区域中的所述第二电极上的第一绝缘层限定所述接触孔的至少一部分，并将所述多个第一电极与所述有源层绝缘， 第二半导体层，在第一绝缘层上的第一接合层，填充接触孔并连接到第一电极，第二电极上的第二接合层，以及包括接触第一电极的第一和第二部分的下表面的第一和第二部分的导电层 接合层和第二接合层。

公开(公告)号：US20250133890A1

公开(公告)日：2025-04-24

申请号：US19005626

申请日：2024-12-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonyong PARK ,  Dongho KIM ,  Hyunjoon KIM ,  Seogwoo HONG ,  Kyungwook HWANG ,  Junsik HWANG

IPC: H10H29/14 ,  B82Y20/00 ,  H10H20/01 ,  H10H20/851 ,  H10H20/855

Abstract: A display apparatus includes a driving substrate including a plurality of grooves, micro light-emitting devices provided in the plurality of grooves and configured to emit light of a first color, and a color conversion layer provided on the micro light-emitting devices and configured to convert the light of the first color into light of at least one second color, wherein the color conversion layer includes light blocking patterns spaced apart from the micro light-emitting devices and spaced apart from each other on a same plane, a nano-porous layer provided between adjacent ones of the light blocking patterns, spaced apart from the micro light-emitting devices, and including a plurality of nano-pores, and quantum dots impregnated in the nano-porous layer and configured to convert the light of the first color into the light of the at least one second color.

公开(公告)号：US20250006542A1

公开(公告)日：2025-01-02

申请号：US18442908

申请日：2024-02-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngtek OH ,  Kyungwook HWANG ,  Dongho KIM ,  Joonyong PARK ,  Sanghoon SONG ,  Minchul YU ,  Junsik HWANG

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/68

Abstract: A semiconductor chip wet transfer method includes: preparing a transfer substrate that includes a plurality of recesses; supplying a liquid that includes semiconductor chips onto the plurality of recesses of the transfer substrate; aligning the semiconductor chips in the plurality of recesses by sweeping, with an align bar, an upper surface of the transfer substrate supplied with the liquid; and performing cleaning by removing semiconductor chips that are not aligned in the plurality of recesses by using a first magnetic force generating device disposed facing a lower surface of the transfer substrate.