Process for producing toner for the development of an electric image
    52.
    发明授权
    Process for producing toner for the development of an electric image 失效
    用于制造用于显影电图像的调色剂的方法

    公开(公告)号:US5393636A

    公开(公告)日:1995-02-28

    申请号:US255895

    申请日:1994-06-07

    IPC分类号: G03G9/087 G03G9/08

    CPC分类号: G03G9/0806 G03G9/08711

    摘要: The present invention provides a process for producing a practical toner for the development of an electrostatic image which has an effect of preventing an offset phenomenon and has low-temperature fixing properties. The process for producing a toner of the present invention comprises the steps of dissolving a high-molecular polymer in a vinyl monomer, mixing the resultant solution with another toner material, and then carrying out suspension polymerization. Preferable examples of the high-molecular polymer include a polymer having a structure unit represented by the formula ##STR1## wherein R.sup.1 is hydrogen or a methyl group, and R.sup.2 is a straight-chain or branched alkyl group having 1 to 20 carbon atoms,and a polymer having a structure unit represented by the formula ##STR2## wherein R.sup.3 is hydrogen or a methyl group, and X is hydrogen, a methyl group, a halogen atom or a methoxy group.

    摘要翻译: 本发明提供一种用于制造用于显影静电图像的实际调色剂的方法,其具有防止胶印现象并具有低温定影性能的效果。 制造本发明的调色剂的方法包括将高分子聚合物溶解在乙烯基单体中,将所得溶液与另一种调色剂材料混合,然后进行悬浮聚合的步骤。 高分子聚合物的优选实例包括具有由式(1)表示的结构单元的聚合物,其中R 1是氢或甲基,R 2是具有1至20个碳的直链或支链烷基 原子和具有由式(2)表示的结构单元的聚合物,其中R 3是氢或甲基,X是氢,甲基,卤素原子或甲氧基。

    Method of manufacturing semiconductor devices
    53.
    发明授权
    Method of manufacturing semiconductor devices 失效
    制造半导体器件的方法

    公开(公告)号:US5372677A

    公开(公告)日:1994-12-13

    申请号:US991420

    申请日:1992-12-16

    摘要: After a silicon nitride film (2) is etched by using a first resist pattern (3A) as a mask before coating a second resist (4) superposing on the first resist pattern (3A), a surface layer portion of the first resist pattern (3A) is subjected to a plasma treatment by using oxygen (O.sub.2). A properties changed layer in the surface layer portion of the first resist pattern (3A) is removed or modified to improve the adhesion between the second resist (4) and the first resist pattern (3A), and the stripping of the second resist (4) is prevented.

    摘要翻译: 在涂覆叠加在第一抗蚀剂图案(3A)上的第二抗蚀剂(4)之前,通过使用第一抗蚀剂图案(3A)作为掩模蚀刻氮化硅膜(2)之后,将第一抗蚀剂图案的表面层部分 3A)通过使用氧(O 2)进行等离子体处理。 第一抗蚀剂图案(3A)的表层部分中的性质改变层被去除或改性,以改善第二抗蚀剂(4)和第一抗蚀剂图案(3A)之间的粘附性,并且第二抗蚀剂(4)的剥离 )被阻止。