摘要:
The present invention is intended to provide an aroma device that can eliminate the need for the replacement of the light source, can prevent the light source from becoming high in temperature and can allow light and aroma to be enjoyed comfortably with a sense of security for a long time. The aroma device uses, as a light source, LEDs 1 covered with first and second covers 3 and 4, and also uses a heater 5 to heat a material 10 to be heated which emits aroma; hence, the need for the replacement of the light source is eliminated, the light source is prevented from becoming high in temperature, and light and aroma can be enjoyed comfortably with a sense of security for a long time.
摘要:
A semiconductor integrated circuit having a built-in PLL circuit which has two charge pump circuits for charging and discharging capacitive elements of a loop filter in response to signals generated by a phase comparator circuit. One of the two charge pump circuits has current sources which generate current values smaller than those generated by current sources of the other charge pump circuit. The loop filter has a first capacitive element connected to a charge/discharge node, and a second capacitive element connected to the charge/discharge node through a resistive element. The first capacitive element is charged and discharged by the one charge pump circuit, while the second capacitive element is charged and discharged by the other charge pump circuit. A charging current source of the one charge pump circuit operates simultaneously with a discharging current source of the other charge pump circuit, i.e., the charge pump circuits operate in opposite phase.
摘要:
Memory cell gates are formed on the main surface of a semiconductor substrate via a gate isolation film. Source regions and drain regions are formed on both sides of the memory cell gates. The source regions have p− impurity regions and n+ impurity regions while the drain regions have p− impurity regions and n+ impurity regions. And the concentration of the p− impurity regions is made higher than the concentration of the p− regions while the concentration of the n+ impurity regions is made higher than the concentration of the n+ impurity regions.
摘要:
A method for producing a non-volatile semiconductor memory device, comprising the steps of providing a semiconductor substrate having a surface; forming trench isolations on the substrate, the trench isolations being projected from the surface; forming source and drain regions between the neighboring trench isolations, so that the source and drain regions are faced each other across a channel region; and forming a floating gate electrode on the channel region through a tunnel film which is formed on the channel region.
摘要:
A semiconductor device 10 with Test Element Group (TEG) for estimating an interlayer dielectric includes a memory cell array. The memory cell array includes a semiconductor substrate 1, and a floating gate 2, an interlayer dielectric 3, and a control gate 4, all formed on the substrate 1 in this order. The TEG has the memory cell array similar to semiconductor device subject to estimation for the interlayer dielectric 3. The floating gate 2 has an electrode 5 for estimating the interlayer dielectric 3 provided on at least one side against an elongated direction of the memory cell array.
摘要:
An axial blower includes a cylindrical hub, a driving device for rotating the cylindrical hub through a rotational shaft, a plurality of vanes arranged to an outer peripheral surface of the cylindrical hub in a circumferential direction thereof, and a plurality of stream-line ribs each having a stream-line shape and provided at a leading edge portion of a negative pressure surface-side of each of the vanes in a range from an end portion of the leading edge portion towards a trailing edge portion of the vane. The stream-line ribs are formed integrally such that an outer surface of a cross section of each stream-line rib along a rotational direction of the axial blower forms a circular arc and a radius of a circular arc curve of the outer surface at a vane leading edge side is larger than a radius of a circular arc curve at a vane inner surface side.
摘要:
This invention provides a MIS transistor with less electrical short between a gate and source/drain electrodes. A sidewall spacer 15 has a two-layer structure including a buffer layer 13 which consists of nitrided oxide silicon and a silicon nitrided layer 14 formed on the buffer layer 13. The sidewall spacer 15 serves as a mask to form a silicide film 10.
摘要:
A brake force control apparatus having a pump for pumping up brake fluid from a fluid pressure passage connecting a master cylinder and a wheel cylinder is provided which can accurately detect an amount of brake operation intended by a driver during execution of a brake assist control. The brake assist control is achieved by supplying the brake fluid delivered by the pump to the wheel cylinder when an emergency brake operation is performed by a driver. The brake force control apparatus has a control signal generator and a fluid pressure controller. The control signal generator generates a control signal by compensating a decrease generated in the output signal when the pump pumps up the brake fluid from the fluid pressure passage. The fluid pressure controller performs the brake assist control by using the control signal.
摘要:
A recording apparatus includes a recording head for performing recording on recording paper, the recording head having three or more types of inks of different densities but of the same color. A combination of the inks used to record a pixel of a grayscale image, which is to be recorded on the recording paper, is decided based upon the pixel by a data distribution unit which refers to ink density data and combination data. Recording by the recording head is controlled, based upon the combination of inks decided, by a unit which controls the recording head and paper feed.
摘要:
It is an object of this invention to provide an image processing apparatus which, when nonmagnetic mono-component development is performed, prevents the formation of white gaps in pattern boundaries between different colors and thereby prevents degradation in the image quality of the formed image. To achieve this object, in one embodiment of the invention, the density value VD(n) of the nth pixel on a certain line is applied to the A input terminal of a selector 207, and the density value VD(n-1) of the (n-1)th pixel is applied to the B input terminal of the selector 207. A subtracter 203 calculates the increase of VD(n) from VD(n-1). If a comparator 204 determines that the increase is a predetermined value C1 or less, a selection signal in the selector 207 is so set that the terminal B (the value of the immediately preceding pixel) is selected.