公开(公告)号：US20220310148A1

公开(公告)日：2022-09-29

申请号：US17615867

申请日：2020-06-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takayuki IKEDA ,  Hitoshi KUNITAKE

IPC: G11C11/405 ,  H03K3/012 ,  H01L27/108 ,  H01L27/12 ,  H01L29/786

Abstract: To provide a semiconductor device with a novel structure. The semiconductor device includes a plurality of constant current circuits each given a digital signal. The constant current circuits each include a first transistor to a third transistor. The first transistor has a function of making a first current corresponding to set analog potential flow therethrough. The second transistor has a function of controlling the first current flowing between a source and a drain of the first transistor, in response to the digital signal. The third transistor has a function of holding the analog potential supplied to a gate of the first transistor, by being turned off. The first transistor to the third transistor each include a semiconductor layer including an oxide semiconductor in a channel formation region.

公开(公告)号：US20220302880A1

公开(公告)日：2022-09-22

申请号：US17632284

申请日：2020-08-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kei TAKAHASHI ,  Takayuki IKEDA

IPC: H03F1/26 ,  H03F3/387 ,  H03F3/00

Abstract: A semiconductor device including an amplifier with improved accuracy is provided. The semiconductor device includes a switch, a capacitor, a chopping circuit, and the amplifier. The amplifier includes a non-inverting input terminal, an inverting input terminal, an inverting output terminal, and a non-inverting output terminal. The semiconductor device, with use of the switch and the capacitor, has a function of sampling and holding a first potential and a second potential input in a first period. The chopping circuit is provided on each of the input terminal side and the output terminal side of the amplifier, and the first potential and the second potential are each input to either one of the non-inverting input terminal and the inverting input terminal in a second period. In a third period, the first potential and the second potential are each input to either one of the non-inverting input terminal and the inverted input terminal, which is different from the second period. In a similar manner, the inverting output terminal and non-inverting output terminal are replaced by the chopping circuit in the second period and the third period to be output from the semiconductor device.

公开(公告)号：US20220278139A1

公开(公告)日：2022-09-01

申请号：US17626307

申请日：2020-07-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takayuki IKEDA ,  Hitoshi KUNITAKE ,  Koji KUSUNOKI ,  Yoshiaki OIKAWA ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L27/32 ,  H01Q1/24 ,  H04M1/02

Abstract: A display device with a novel structure is provided. The display device includes a first substrate provided with a plurality of pixels including a display element, and a second substrate including a first conductive layer provided with a plurality of first openings. The first conductive layer has a function of an antenna capable of transmitting and receiving a radio signal. The pixel and the first opening include a region where the pixel and the first opening overlap with each other. The second substrate includes an element layer. The element layer includes a transistor. The transistor has a function of an amplifier capable of amplifying the radio signal. The transistor each includes a semiconductor layer including a metal oxide in a channel formation region. The metal oxide contains In, Ga, and Zn.

公开(公告)号：US20220223671A1

公开(公告)日：2022-07-14

申请号：US17570487

申请日：2022-01-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Takayuki IKEDA ,  Kenichi OKAZAKI ,  Yasumasa YAMANE ,  Hajime KIMURA ,  Tatsuya ONUKI

IPC: H01L27/32 ,  H01L51/56

Abstract: A novel display panel that is highly convenient, useful, or reliable can be provided. The display panel includes a first light-emitting device, a second light-emitting device, a first insulating film, and a conductive film. The first light-emitting device includes a first electrode and a second electrode; the first electrode includes a first region overlapping with the second electrode and a second region outside the first region. The second light-emitting device includes a third electrode and a fourth electrode, and the third electrode includes a third region overlapping with the fourth electrode and a fourth region outside the third region. The first insulating film is in contact with the second region and the fourth region, and the first insulating film includes a first opening and a second opening. The first opening overlaps with the second electrode and the second opening overlaps with the fourth electrode. The conductive film is electrically connected to the second electrode and the fourth electrode in the first opening and in the second opening, respectively.

公开(公告)号：US20220181428A1

公开(公告)日：2022-06-09

申请号：US17603067

申请日：2020-04-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidetomo KOBAYASHI ,  Hideaki SHISHIDO ,  Takayuki IKEDA ,  Shuichi KATSUI

IPC: H01L27/32

Abstract: A display apparatus with low power consumption and high image quality is provided. The display apparatus includes a light-emitting element, a first transistor, a second transistor, a third transistor, a first capacitor, and a second capacitor. Preferably, one electrode of the light-emitting element is electrically connected to one of a source and a drain of the first transistor; the one electrode of the light-emitting element is electrically connected to one electrode of the first capacitor; a gate of the first transistor is electrically connected to one of a source and a drain of the second transistor; the gate of the first transistor is electrically connected to one electrode of the second capacitor; the other electrode of the second capacitor is electrically connected to the other electrode of the first capacitor; and the other electrode of the second capacitor is electrically connected to one of a source and a drain of the third transistor.

公开(公告)号：US20220137409A1

公开(公告)日：2022-05-05

申请号：US17429979

申请日：2020-02-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Takayuki IKEDA ,  Hidetomo KOBAYASHI ,  Hideaki SHISHIDO ,  Kiyotaka KIMURA ,  Takashi NAKAGAWA ,  Kosei NEI ,  Kentaro HAYASHI

IPC: G02B27/01 ,  G06V40/16 ,  G06T7/73

Abstract: An object is to provide an electronic device capable of recognizing a user's facial feature accurately. A glasses-type electronic device includes a first optical component, a second optical component, a frame, an imaging device, a feature extraction unit, and an emotion estimation unit. The frame is in contact with a side surface of the first optical component and a side surface of the second optical component. The imaging device is in contact with the frame and has a function of detecting part of a user's face. The feature extraction unit has a function of extracting a feature of the user's face from the detected part of the user's face. The emotion estimation unit has a function of estimating information on the user from the extracted feature.

公开(公告)号：US20220034851A1

公开(公告)日：2022-02-03

申请号：US17280327

申请日：2019-10-01

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hideaki SHISHIDO ,  Takayuki IKEDA

IPC: G01N29/44 ,  G01N29/04 ,  G01N29/24 ,  G01N29/36

Abstract: A cost of a testing device is reduced. A structure of a testing device is simplified. A testing device capable of testing with higher accuracy is provided. A testing device (10) has a structure including a sending unit (13), a receiving unit (14), a control unit (11), and a display (15). The control unit includes a memory portion (21) and an arithmetic portion (22). The sending unit has a function of generating a pulse signal for a probe (40) to generate an ultrasonic wave (51). The receiving unit has a function of generating a first signal including a first analog data (D1) on the basis of the input single input from the probe. The memory portion has a function of storing the first analog data. The arithmetic portion has a function of generating an image signal (S0) output to the display on the basis of the first analog data stored in the memory portion. The display has a function of displaying an image based on the image signal.

公开(公告)号：US20210391604A1

公开(公告)日：2021-12-16

申请号：US17291021

申请日：2019-11-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takanori MATSUZAKI ,  Takayuki IKEDA ,  Munehiro KOZUMA ,  Ryota TAJIMA ,  Hiroki INOUE

IPC: H01M10/48 ,  H02J7/00 ,  H01L27/06

Abstract: A novel semiconductor device that is highly convenient or reliable is provided.
The semiconductor device includes a sensor unit, a first memory unit, a second memory unit, and a determination unit. The sensor unit supplies a sensor signal, the first memory unit retains the sensor signal, the second memory unit retains standard data and allowable difference information, the determination unit compares the sensor signal with the standard data, and the determination unit supplies a control signal in the case where a difference between the sensor signal and the standard data exceeds the allowable difference information.

公开(公告)号：US20210351224A1

公开(公告)日：2021-11-11

申请号：US17273032

申请日：2019-08-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Satoshi SEO ,  Koji KUSUNOKI ,  Takayuki IKEDA

IPC: H01L27/146

Abstract: A thin imaging device including a light source is provided. The imaging device includes a light-emitting device which emits infrared light. Infrared light emitted by the light-emitting device and reflected by a subject is received by a photoelectric conversion device included in a pixel circuit. Since an EL element is used as the light-emitting device, a thin imaging device with a light source can be formed. A pixel circuit utilizing an oxide semiconductor transistor having a property of low off-state current is used, whereby image capturing by a global shutter method is possible and a distortion-free image can be obtained even when the subject is moving.

公开(公告)号：US20210217891A1

公开(公告)日：2021-07-15

申请号：US17054926

申请日：2019-05-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hidetomo KOBAYASHI ,  Takayuki IKEDA ,  Takashi NAKAGAWA ,  Takeya HIROSE ,  Shuichi KATSUI

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/108 ,  G11C11/4074 ,  G11C11/4096

Abstract: A semiconductor device in which the accuracy of arithmetic operation is increased by correction of the threshold voltage of a transistor can be provided. The semiconductor device includes first and second current supply circuits, and the second current supply circuit has the same configuration as the first current supply circuit. The first current supply circuit includes first and second transistors, a first capacitor, and first to third nodes. A first terminal of the first transistor is electrically connected to the first node, and a back gate of the first transistor is electrically connected to a first terminal of the second transistor and a first terminal of the first capacitor. A gate of the first transistor is electrically connected to the second node, and a second terminal of the first capacitor is electrically connected to a second terminal of the first transistor. The first node of the first current supply circuit is electrically connected to a second node of each of the first and second current supply circuits. The threshold voltage of the first transistor is corrected by writing a correction voltage to the back gate of the first transistor.