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    Element substrate and light emitting device
    52.
    发明授权
    Element substrate and light emitting device 有权
    元件基板和发光器件

    公开(公告)号：US09147720B2

    公开(公告)日：2015-09-29

    申请号：US14305455

    申请日：2014-06-16

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Mitsuaki Osame ,  Aya Anzai ,  Yu Yamazaki

    IPC: H01L27/28 ,  H01L51/52 ,  H01L27/32 ,  G09G3/32 ,  H01L29/786 ,  H01L51/50 ,  G09G3/20

    CPC classification number: H01L27/326 ,  G09G3/2022 ,  G09G3/3233 ,  G09G2300/0417 ,  G09G2300/0842 ,  G09G2300/0885 ,  G09G2310/0251 ,  H01L27/283 ,  H01L29/78672 ,  H01L51/5012 ,  H01L51/5296

    Abstract: A light emitting device and an element substrate which are capable of suppressing variations in the luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. According to the invention, a depletion mode transistor is used as a driving transistor. The gate of the driving transistor is fixed in its potential or connected to the source or drain thereof to operate in a saturation region with a constant current flow. A current controlling transistor which operates in a linear region is connected in series to the driving transistor, and a video signal for transmitting a light emission or non-emission of a pixel is inputted to the gate of the current controlling transistor through a switching transistor.

    Abstract translation: 一种发光器件和元件衬底，其能够抑制由于驱动晶体管的特性变化而导致的像素之中的发光元件的亮度强度的变化，而不会抑制开关晶体管的截止电流低并且增加电容器的存储容量 。 根据本发明，使用耗尽型晶体管作为驱动晶体管。 驱动晶体管的栅极固定在其电位或连接到其源极或漏极，以在具有恒定电流的饱和区域中工作。 在线性区域中工作的电流控制晶体管与驱动晶体管串联连接，并且用于透射像素的发光或不发光的视频信号通过开关晶体管输入到电流控制晶体管的栅极。

    ELEMENT SUBSTRATE AND LIGHT EMITTING DEVICE
    54.
    发明申请
    ELEMENT SUBSTRATE AND LIGHT EMITTING DEVICE 有权
    元件基板和发光装置

    公开(公告)号：US20140291657A1

    公开(公告)日：2014-10-02

    申请号：US14305455

    申请日：2014-06-16

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Mitsuaki Osame ,  Aya Anzai ,  Yu Yamazaki

    IPC: H01L27/32 ,  H01L29/786 ,  H01L51/50

    CPC classification number: H01L27/326 ,  G09G3/2022 ,  G09G3/3233 ,  G09G2300/0417 ,  G09G2300/0842 ,  G09G2300/0885 ,  G09G2310/0251 ,  H01L27/283 ,  H01L29/78672 ,  H01L51/5012 ,  H01L51/5296

    Abstract: A light emitting device and an element substrate which are capable of suppressing variations in the luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. According to the invention, a depletion mode transistor is used as a driving transistor. The gate of the driving transistor is fixed in its potential or connected to the source or drain thereof to operate in a saturation region with a constant current flow. A current controlling transistor which operates in a linear region is connected in series to the driving transistor, and a video signal for transmitting a light emission or non-emission of a pixel is inputted to the gate of the current controlling transistor through a switching transistor.

    Abstract translation: 一种发光器件和元件衬底，其能够抑制由于驱动晶体管的特性变化而导致的像素之中的发光元件的亮度强度的变化，而不会抑制开关晶体管的截止电流低并且增加电容器的存储容量 。 根据本发明，使用耗尽型晶体管作为驱动晶体管。 驱动晶体管的栅极固定在其电位或连接到其源极或漏极，以在具有恒定电流的饱和区域中工作。 在线性区域中工作的电流控制晶体管与驱动晶体管串联连接，并且用于透射像素的发光或不发光的视频信号通过开关晶体管输入到电流控制晶体管的栅极。

    LIGHT EMITTING DEVICE
    55.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20140151707A1

    公开(公告)日：2014-06-05

    申请号：US14172943

    申请日：2014-02-05

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Makoto Udagawa ,  Masahiko Hayakawa ,  Jun Koyama ,  Mitsuaki Osame ,  Aya Anzai

    IPC: H01L29/786 ,  H01L27/12

    CPC classification number: H01L27/3262 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/3276 ,  H01L29/78675 ,  H01L29/78696 ,  H01L51/52

    Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.

    Abstract translation: 本发明提供了一种具有特定长度的TFT的沟道长度，特别是比现有TFT长的几十到几百倍，特别是在栅极电压下变为导通状态 高于现有的和驾驶，并允许具有低通道电导gd。 根据本发明，不仅可以减小导通电流的简单分散，而且可以降低其归一化色散，并且除了各个TFT之间的色散的降低之外，OLED本身的分散和由于 可以降低OLED的劣化。

    Light emitting device comprising an organic compound layer
    57.
    发明授权
    Light emitting device comprising an organic compound layer 有权
    包含有机化合物层的发光器件

    公开(公告)号：US08648338B2

    公开(公告)日：2014-02-11

    申请号：US13689888

    申请日：2012-11-30

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Makoto Udagawa ,  Masahiko Hayakawa ,  Jun Koyama ,  Mitsuaki Osame ,  Aya Anzai

    IPC: H01L51/56

    CPC classification number: H01L27/3262 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/3276 ,  H01L29/78675 ,  H01L29/78696 ,  H01L51/52

    Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.

    Abstract translation: 本发明提供了一种具有特定长度的TFT的沟道长度，特别是比现有TFT长的几十到几百倍，特别是在栅极电压下变为导通状态 高于现有的和驾驶，并允许具有低通道电导gd。 根据本发明，不仅可以减小导通电流的简单分散，而且可以降低其归一化色散，并且除了各个TFT之间的色散的降低之外，OLED本身的分散和由于 可以降低OLED的劣化。

    LIGHT-EMITTING DEVICE
    58.
    发明申请
    LIGHT-EMITTING DEVICE 审中-公开
    发光装置

    公开(公告)号：US20130248892A1

    公开(公告)日：2013-09-26

    申请号：US13771662

    申请日：2013-02-20

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Mitsuaki Osame ,  Aya Anzai ,  Jun Koyama ,  Makoto Udagawa ,  Masahiko Hayakawa ,  Shunpei Yamazaki

    IPC: H01L33/08

    CPC classification number: H01L33/08 ,  G09G3/3233 ,  G09G2300/0426 ,  G09G2300/0842 ,  G09G2310/0254 ,  G09G2320/043 ,  H01L27/3211 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3295 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A-light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. The channel length of the driving TFTs is selected to be very larger than the channel width of the driving TFTs to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT.

    Abstract translation: 实现高开口率并且图像质量几乎不受TFT的特性变化影响的A发光器件。 驱动TFT的沟道长度被选择为非常大于驱动TFT的沟道宽度以改善饱和区域中的电流特性，并且将高VGS施加到驱动TFT以获得期望的漏极电流。 因此，驱动TFT的漏极电流几乎不受阈值电压的变化的影响。 此外，在布置像素时，布线布置在分隔壁下方，并且驱动TFT布置在布线下方，以避免开口率的降低，尽管驱动TFT的尺寸增加。

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