摘要:
An embodiment of the invention provides a semiconductor storage device including a NAND string, a SEN node, and a capacitor. The NAND string includes plural series-connected memory cells, and one end of the NAND string is connected to a bit line while the other end is connected to a common source line. The SEN node is configured to be able to be electrically connected to a voltage source and the bit line. In the capacitor, one end is connected to the SEN node while the other end is connected to a CLK node to which a voltage within a predetermined range is applied. A discharge rate of the SEN node is enhanced by decreasing a capacitance during discharge of the SEN node only when a selected memory cell selected from the plural memory cells is an on-cell.
摘要:
A bis[tri(hydroxypolyalkyleneoxy)silylalkyl] polysulfide, i.e., a polysulfide that contains bonded hydroxypolyalkyleneoxy groups instead of alkoxy groups in the bis(trialkoxysilylalkyl) polysulfide; a method of manufacturing of the aforementioned polysulfide by heating a bis(trialkoxysilylalkyl) polysulfide and a polyalkyleneglycol; a tire rubber additive to a tire rubber composition that comprises a bis[tri(hydroxypolyalkyleneoxy)silylalkyl] polysulfide alone or a mixture of bis[tri(hydroxypolyalkyleneoxy)silylalkyl] polysulfide and a polyalkyleneglycol; and a tire rubber composition that contains the aforementioned additive.
摘要:
A nonvolatile semiconductor memory includes: a memory cell unit including a plurality of memory cells having an electric charge accumulation layer and a control electrode, said memory cells being electrically connected in series; a plurality of word lines, each of which is electrically connected to said control electrode of said plurality of memory cells; a source line electrically connected to said memory cells at one end of said memory cell unit; a bit line electrically connected to said memory cells at the other end of said memory cell unit; and a control signal generation circuit, which during a data readout operation staggers a timing for selecting the word line connected to said memory cells of said memory cell unit from a timing for selecting a non-selected word line connected to a non-selected memory.
摘要:
A stabilizing agent for a hydroalkoxysilane such as triethoxysilane and trimethoxysilane characterized by comprising a carboxylate such as an alkali metal salt or an alkali earth metal salt of a carboxylic acid having 1 to 18 carbon atoms; a method for stabilizing a hydroalkoxysilane by combining it with a carboxylate; and a hydroalkoxysilane stabilized with a carboxylate.
摘要:
A curable organic resin composition comprising (A) 100 parts by weight of a curable organic resin and (B) 0.01 to 100 parts by weight of a thiocyanato-containing organohydrocarbonoxysilane or an isothiocyanato-containing organohydrocarbonoxysilane represented by the general formula: X—R1—Si(OR2)nR33-n, wherein X is NCS— or SCN—, R1 is an alkylene or alkyleneoxyalkylene group, R2 and R3 are monovalent hydrocarbon groups, and the subscript n is 1, 2, or 3. The curable organic resin composition possesses superior moldability and, when cured, exhibits superior adhesive properties on substrates such as metals.
摘要:
To provide a highly efficient and stable method for the preparation of a silicon-containing polysulfide-type polymer, in particular, a polysulfide-type polymer with organosilyl groups, the method being carried out without generation of by-products that could have high impact on the environment. A method for the preparation of a silicon-containing polysulfide-type polymer characterized by mixing (A) a silicon-containing compound having a silicon atom-bonded monovalent organic group having an aliphatic unsaturated bond; (B) a polysulfide polymer with at least two mercapto groups in one molecule; and (C) an organic base or ammonia; the mixing being carried out in the presence of (D) sulfur.
摘要:
A method of processing a substrate made of a ferroelectric single crystalline material, including the steps of forming a desired proton-exchanged layer in the substrate by proton-exchanging a portion of the substrate, and selectively removing the proton-exchanged layer to form a concave ditch structure in the ferroelectric single crystalline substrate, wherein the desired proton-exchange layer is formed by using an acid containing a lithium salt as a proton-exchanging source, the surface of the substrate from which the concave ditch structure is formed is an X-cut surface or a Z-cut surface, as a main surface, of the ferroelectric single crystalline material used as the substrate, and the concave ditch structure has a recessed portion with its depth equal to or larger than its half opening width.
摘要:
The present invention is a radiation-curable coating composition which comprises (A) a specified amino-group-containing alkoxysilane such as N-&bgr;-(N-vinylbenzylaminoethyl)-&ggr;-aminopropyltrimethoxysilane, and (B) an acrylic polymer.
摘要:
A hydrolyzable group-containing organosilicon compound is represented by the general formula XCH2Si(OSiYR22)nR13-n (1) wherein each R1 is independently a C1-20 hydrolyzable group; each R2 is independently a C1-20 substituted or unsubstituted monovalent hydrocarbyl group excluding groups that have an aliphatically unsaturated bond; X is a halogen atom; Y is the hydrogen atom or a C2-18 alkenyl group; and n is 1 or 2. The organosilicon compound of the present invention can efficiently introduce a hydrolysable group into various compounds through the hydrosilylation reaction.
摘要:
A method for producing ketimine structure-containing alkoxysilane comprising reacting amino-functional alkoxysilane with a monocarbonyl compound by heating and azeotropically distilling off the produced water together with the monocarbonyl compound to yield ketimine structure-containing alkoxysilane, characterized by introducing additional monocarbonyl compound at the time of the azeotropic distillation of the produced water together with the monocarbonyl compound.