SEMICONDUCTOR STORAGE DEVICE AND READING METHOD THEREOF
    51.
    发明申请
    SEMICONDUCTOR STORAGE DEVICE AND READING METHOD THEREOF 有权
    半导体存储器件及其读取方法

    公开(公告)号:US20110176366A1

    公开(公告)日:2011-07-21

    申请号:US12978878

    申请日:2010-12-27

    IPC分类号: G11C16/04 G11C16/26

    CPC分类号: G11C16/0408 G11C16/26

    摘要: An embodiment of the invention provides a semiconductor storage device including a NAND string, a SEN node, and a capacitor. The NAND string includes plural series-connected memory cells, and one end of the NAND string is connected to a bit line while the other end is connected to a common source line. The SEN node is configured to be able to be electrically connected to a voltage source and the bit line. In the capacitor, one end is connected to the SEN node while the other end is connected to a CLK node to which a voltage within a predetermined range is applied. A discharge rate of the SEN node is enhanced by decreasing a capacitance during discharge of the SEN node only when a selected memory cell selected from the plural memory cells is an on-cell.

    摘要翻译: 本发明的实施例提供一种包括NAND串,SEN节点和电容器的半导体存储装置。 NAND串包括多个串联存储单元,并且NAND串的一端连接到位线,而另一端连接到公共源极线。 SEN节点被配置为能够电连接到电压源和位线。 在电容器中,一端连接到SEN节点,而另一端连接到施加了预定范围内的电压的CLK节点。 只有当从多个存储单元中选择的所选择的存储单元是开小区时,通过减少SEN节点的放电期间的电容来增强SEN节点的放电率。

    Bis [Tri (Hydroxypolyalkyleneoxy) Silylalkyl] Polysulfide, Method of Manufacturing Bis [Tri (Hydroxypolyalkyleneoxy) Silylalkyl] Polysulfide, Tire Rubber Additive, And Tire Rubber Composition
    52.
    发明申请
    Bis [Tri (Hydroxypolyalkyleneoxy) Silylalkyl] Polysulfide, Method of Manufacturing Bis [Tri (Hydroxypolyalkyleneoxy) Silylalkyl] Polysulfide, Tire Rubber Additive, And Tire Rubber Composition 失效
    双[三(羟基聚亚烷氧基)硅烷基烷基]多硫化物,制备双[三(羟基聚亚烷氧基)硅烷基烷基]多硫化物,轮胎橡胶添加剂和轮胎橡胶组合物的方法

    公开(公告)号:US20110040000A1

    公开(公告)日:2011-02-17

    申请号:US12521610

    申请日:2007-12-28

    IPC分类号: C08K5/541 C07F7/08

    CPC分类号: C07F7/1804

    摘要: A bis[tri(hydroxypolyalkyleneoxy)silylalkyl] polysulfide, i.e., a polysulfide that contains bonded hydroxypolyalkyleneoxy groups instead of alkoxy groups in the bis(trialkoxysilylalkyl) polysulfide; a method of manufacturing of the aforementioned polysulfide by heating a bis(trialkoxysilylalkyl) polysulfide and a polyalkyleneglycol; a tire rubber additive to a tire rubber composition that comprises a bis[tri(hydroxypolyalkyleneoxy)silylalkyl] polysulfide alone or a mixture of bis[tri(hydroxypolyalkyleneoxy)silylalkyl] polysulfide and a polyalkyleneglycol; and a tire rubber composition that contains the aforementioned additive.

    摘要翻译: 双(三(羟基聚亚烷氧基)甲硅烷基烷基]多硫化物,即在双(三烷氧基甲硅烷基烷基)多硫化物中含有键合的羟基聚亚烷基氧基代替烷氧基的多硫化物; 通过加热双(三烷氧基甲硅烷基烷基)多硫化物和聚亚烷基二醇制备上述多硫化物的方法; 包含单独的双[三(羟基亚烷基氧基)甲硅烷基烷基]多硫化物或双[三(羟基聚亚烷基氧基)甲硅烷基烷基]多硫化物和聚亚烷基二醇的混合物的轮胎橡胶组合物的轮胎橡胶添加剂; 和含有上述添加剂的轮胎橡胶组合物。

    Nonvolatile semiconductor memory, method for reading out thereof, and memory card
    53.
    发明授权
    Nonvolatile semiconductor memory, method for reading out thereof, and memory card 失效
    非易失性半导体存储器,读出方法和存储卡

    公开(公告)号:US07710779B2

    公开(公告)日:2010-05-04

    申请号:US12361362

    申请日:2009-01-28

    IPC分类号: G11C16/04

    摘要: A nonvolatile semiconductor memory includes: a memory cell unit including a plurality of memory cells having an electric charge accumulation layer and a control electrode, said memory cells being electrically connected in series; a plurality of word lines, each of which is electrically connected to said control electrode of said plurality of memory cells; a source line electrically connected to said memory cells at one end of said memory cell unit; a bit line electrically connected to said memory cells at the other end of said memory cell unit; and a control signal generation circuit, which during a data readout operation staggers a timing for selecting the word line connected to said memory cells of said memory cell unit from a timing for selecting a non-selected word line connected to a non-selected memory.

    摘要翻译: 非易失性半导体存储器包括:存储单元单元,包括具有电荷累积层和控制电极的多个存储单元,所述存储单元串联电连接; 多个字线,其各自电连接到所述多个存储单元的所述控制电极; 在所述存储单元单元的一端电连接到所述存储单元的源极线; 在所述存储单元单元的另一端电连接到所述存储单元的位线; 以及控制信号生成电路,其在数据读出操作期间,从连接到未选择的存储器的未选择的字线的选择时刻开始,选择连接到所述存储单元的所述存储单元的字线的定时。

    Stabilizing agent for hydroalkoxysilane, stabilization method, and stabilized hydroalkoxysilane
    54.
    发明授权
    Stabilizing agent for hydroalkoxysilane, stabilization method, and stabilized hydroalkoxysilane 有权
    氢烷氧基硅烷的稳定剂,稳定化方法和稳定的氢烷氧基硅烷

    公开(公告)号:US07659419B2

    公开(公告)日:2010-02-09

    申请号:US10566027

    申请日:2004-07-30

    IPC分类号: C07F7/02

    CPC分类号: C07F7/025 C07F7/20

    摘要: A stabilizing agent for a hydroalkoxysilane such as triethoxysilane and trimethoxysilane characterized by comprising a carboxylate such as an alkali metal salt or an alkali earth metal salt of a carboxylic acid having 1 to 18 carbon atoms; a method for stabilizing a hydroalkoxysilane by combining it with a carboxylate; and a hydroalkoxysilane stabilized with a carboxylate.

    摘要翻译: 其特征在于包含羧酸盐如具有1至18个碳原子的羧酸的碱金属盐或碱土金属盐的氢化烷氧基硅烷如三乙氧基硅烷和三甲氧基硅烷的稳定剂; 一种通过将其与羧酸酯组合来稳定氢烷氧基硅烷的方法; 和用羧酸酯稳定的氢烷氧基硅烷。

    Method for the preparation of a silicon-containing polysulfide-type polymer
    56.
    发明申请
    Method for the preparation of a silicon-containing polysulfide-type polymer 有权
    制备含硅多硫化物型聚合物的方法

    公开(公告)号:US20060235120A1

    公开(公告)日:2006-10-19

    申请号:US10533169

    申请日:2003-10-28

    IPC分类号: B60C1/00

    摘要: To provide a highly efficient and stable method for the preparation of a silicon-containing polysulfide-type polymer, in particular, a polysulfide-type polymer with organosilyl groups, the method being carried out without generation of by-products that could have high impact on the environment. A method for the preparation of a silicon-containing polysulfide-type polymer characterized by mixing (A) a silicon-containing compound having a silicon atom-bonded monovalent organic group having an aliphatic unsaturated bond; (B) a polysulfide polymer with at least two mercapto groups in one molecule; and (C) an organic base or ammonia; the mixing being carried out in the presence of (D) sulfur.

    摘要翻译: 为了提供用于制备含硅多硫化物型聚合物,特别是具有有机甲硅烷基的多硫化物型聚合物的高效和稳定的方法,该方法不会产生可产生高度影响的副产物 环境。 一种制备含硅多硫化物型聚合物的方法,其特征在于混合(A)具有硅原子键合的具有脂族不饱和键的一价有机基团的含硅化合物; (B)在一个分子中具有至少两个巯基的多硫化物聚合物; 和(C)有机碱或氨; 在(D)硫的存在下进行混合。

    Method of processing a substrate made of a ferroelectric single crystalline material
    57.
    发明授权
    Method of processing a substrate made of a ferroelectric single crystalline material 失效
    处理由铁电单晶材料制成的基板的方法

    公开(公告)号:US06687448B2

    公开(公告)日:2004-02-03

    申请号:US09250190

    申请日:1999-02-16

    IPC分类号: G02B610

    摘要: A method of processing a substrate made of a ferroelectric single crystalline material, including the steps of forming a desired proton-exchanged layer in the substrate by proton-exchanging a portion of the substrate, and selectively removing the proton-exchanged layer to form a concave ditch structure in the ferroelectric single crystalline substrate, wherein the desired proton-exchange layer is formed by using an acid containing a lithium salt as a proton-exchanging source, the surface of the substrate from which the concave ditch structure is formed is an X-cut surface or a Z-cut surface, as a main surface, of the ferroelectric single crystalline material used as the substrate, and the concave ditch structure has a recessed portion with its depth equal to or larger than its half opening width.

    摘要翻译: 一种处理由铁电单晶材料制成的衬底的方法,包括以下步骤:通过质子交换衬底的一部分在衬底中形成所需的质子交换层,并选择性地除去质子交换层以形成凹陷 铁电单晶衬底中的沟槽结构,其中通过使用含有锂盐作为质子交换源的酸形成所需的质子交换层,形成凹沟结构的衬底的表面是X射线, 切割面或作为基板的铁电单晶材料的主表面的Z切割面,并且凹沟结构具有深度等于或大于其半开口宽度的凹部。

    Organosilicon Compound And Method Of Producing Same
    59.
    发明申请
    Organosilicon Compound And Method Of Producing Same 审中-公开
    有机硅化合物及其生产方法

    公开(公告)号:US20110301375A1

    公开(公告)日:2011-12-08

    申请号:US13142389

    申请日:2009-12-24

    IPC分类号: C07F7/18

    CPC分类号: C07F7/1804 C07F7/0838

    摘要: A hydrolyzable group-containing organosilicon compound is represented by the general formula XCH2Si(OSiYR22)nR13-n  (1) wherein each R1 is independently a C1-20 hydrolyzable group; each R2 is independently a C1-20 substituted or unsubstituted monovalent hydrocarbyl group excluding groups that have an aliphatically unsaturated bond; X is a halogen atom; Y is the hydrogen atom or a C2-18 alkenyl group; and n is 1 or 2. The organosilicon compound of the present invention can efficiently introduce a hydrolysable group into various compounds through the hydrosilylation reaction.

    摘要翻译: 含有水解性基团的有机硅化合物由通式XCH 2 Si(OSiYR 22)n R 13-n(1)表示,其中每个R 1独立地为C 1-20可水解基团; 每个R 2独立地为除了具有脂族不饱和键的基团之外的C 1-20取代或未取代的单价烃基; X是卤原子; Y是氢原子或C 2-18烯基; n为1或2.本发明的有机硅化合物可以通过氢化硅烷化反应有效地将可水解基团引入各种化合物中。

    Method for producing ketimine structure-containing alkoxysilane
    60.
    发明授权
    Method for producing ketimine structure-containing alkoxysilane 有权
    制备含有酮亚胺结构的烷氧基硅烷的方法

    公开(公告)号:US07923572B2

    公开(公告)日:2011-04-12

    申请号:US12067746

    申请日:2006-09-21

    IPC分类号: C07F7/18 C08K5/00 C08K5/5465

    CPC分类号: C08K5/5465 C07F7/1892

    摘要: A method for producing ketimine structure-containing alkoxysilane comprising reacting amino-functional alkoxysilane with a monocarbonyl compound by heating and azeotropically distilling off the produced water together with the monocarbonyl compound to yield ketimine structure-containing alkoxysilane, characterized by introducing additional monocarbonyl compound at the time of the azeotropic distillation of the produced water together with the monocarbonyl compound.

    摘要翻译: 一种含有酮亚胺结构的烷氧基硅烷的制造方法,其特征在于,通过与单羰基化合物一起加热共沸蒸馏生成的水,使氨基官能的烷氧基硅烷与单羰基化合物反应,得到含有酮亚胺结构的烷氧基硅烷,其特征在于, 与单羰基化合物一起共沸蒸馏生产的水。