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    Bit patterned medium
    52.
    发明授权
    Bit patterned medium 有权
    位图形介质

    公开(公告)号：US08043733B2

    公开(公告)日：2011-10-25

    申请号：US12039112

    申请日：2008-02-28

    Applicant: Hoo-san Lee ,  Sung-chul Lee ,  Hoon-sang Oh

    Inventor： Hoo-san Lee ,  Sung-chul Lee ,  Hoon-sang Oh

    IPC: G11B5/66

    CPC classification number: G11B5/66 ,  G11B5/855

    Abstract: A bit patterned medium in which an exchange coupling layer induces exchange coupling between adjacent bits in order to reduce a switching field difference resulting from different magnetization directions of bits. The exchange coupling layer is disposed either over or under a recording layer having a plurality of bits. The exchange coupling layer induces exchange coupling between a bit which is to be recorded and an adjacent bit and reduces a switching field difference resulting from a difference between the magnetization direction of the bit to be recorded and the magnetization direction of neighboring bits due to an exchange coupling force generated during the exchange coupling.

    Abstract translation: 一种位图形介质，其中交换耦合层引起相邻位之间的交换耦合，以便减少由不同磁化方向引起的开关场差。 交换耦合层设置在具有多个位的记录层之上或之下。 交换耦合层引起要被记录的位和相邻位之间的交换耦合，并减少由于要记录的位的磁化方向与由于交换而产生的相邻位的磁化方向之间的差导致的开关场差 在交换耦合期间产生的耦合力。

    Magnetic tracks, information storage devices including magnetic tracks, and methods of operating information storage devices
    53.
    发明授权
    Magnetic tracks, information storage devices including magnetic tracks, and methods of operating information storage devices 失效
    磁迹，包括磁迹的信息存储设备，以及操作信息存储设备的方法

    公开(公告)号：US08018764B2

    公开(公告)日：2011-09-13

    申请号：US12461062

    申请日：2009-07-30

    Applicant: Sung-chul Lee ,  Jai-kwang Shin ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pl ,  Ji-young Bae

    Inventor： Sung-chul Lee ,  Jai-kwang Shin ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pl ,  Ji-young Bae

    IPC: G11C11/14

    CPC classification number: G11C19/0808 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

    Abstract: A magnetic track includes first and second magnetic domain regions having different lengths and different magnetic domain wall movement speeds. A longer of the first and second magnetic domain regions serves as an information read/write region. An information storage device includes a magnetic track. The magnetic track includes a plurality of magnetic domain regions and a magnetic domain wall region formed between neighboring magnetic domain regions. The plurality of magnetic domain regions includes a first magnetic domain region and at least one second magnetic domain region having a smaller length than the first magnetic domain region. The information storage device further includes a first unit configured to perform at least one of an information recording operation and an information reproducing operation on the first magnetic domain region, and a magnetic domain wall movement unit configured to move a magnetic domain wall of the magnetic domain wall region.

    Abstract translation: 磁道包括具有不同长度和不同磁畴壁移动速度的第一和第二磁畴区域。 第一和第二磁畴区域中较长的区域用作信息读/写区域。 信息存储装置包括磁道。 磁道包括多个磁畴区域和形成在相邻磁畴区域之间的磁畴壁区域。 多个磁畴区域包括第一磁畴区域和具有比第一磁畴区域更小的长度的至少一个第二磁畴区域。 信息存储装置还包括被配置为在第一磁畴区域上执行信息记录操作和信息再现操作中的至少一个的第一单元和被配置为移动磁畴的磁畴壁的磁畴壁移动单元 墙区域。

    Magneto-resistive devices, information storage devices including the same and methods of operating information storage devices
    54.
    发明申请
    Magneto-resistive devices, information storage devices including the same and methods of operating information storage devices 有权
    磁阻设备，包括其的信息存储设备和操作信息存储设备的方法

    公开(公告)号：US20110085258A1

    公开(公告)日：2011-04-14

    申请号：US12801712

    申请日：2010-06-22

    Applicant: Ji-young Bae ,  Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo

    Inventor： Ji-young Bae ,  Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo

    IPC: G11B27/36 ,  G11B5/127

    CPC classification number: G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808 ,  H01L43/08

    Abstract: An information storage device includes a magnetic track and a magnetic domain wall moving unit. The magnetic track has a plurality of magnetic domains and a magnetic domain wall between each pair of adjacent magnetic domains. The magnetic domain wall moving unit is configured to move at least the magnetic domain wall. The information storage device further includes a magneto-resistive device configured to read information recorded on the magnetic track. The magneto-resistive device includes a pinned layer, a free layer and a separation layer arranged there between. The pinned layer has a fixed magnetization direction. The free layer is disposed between the pinned layer and the magnetic track, and has a magnetization easy axis, which is non-parallel to the magnetization direction of the pinned layer.

    Abstract translation: 信息存储装置包括磁道和磁畴壁移动单元。 磁道在每对相邻磁畴之间具有多个磁畴和磁畴壁。 磁畴壁移动单元构造成至少移动磁畴壁。 信息存储装置还包括被配置为读取记录在磁道上的信息的磁阻装置。 磁阻装置包括钉扎层，自由层和布置在其间的分离层。 被钉扎层具有固定的磁化方向。 自由层设置在被钉扎层和磁迹之间，并且具有与被钉扎层的磁化方向不平行的易磁化轴。

    Information storage devices using magnetic domain wall movement and methods of manufacturing the same
    55.
    发明授权
    Information storage devices using magnetic domain wall movement and methods of manufacturing the same 失效
    使用磁畴壁运动的信息存储装置及其制造方法相同

    公开(公告)号：US07910232B2

    公开(公告)日：2011-03-22

    申请号：US12149641

    申请日：2008-05-06

    Applicant: Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Chang-won Lee

    Inventor： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Chang-won Lee

    IPC: G11B5/76

    CPC classification number: G11B5/855 ,  G11B5/7325 ,  G11C11/14 ,  G11C19/0841

    Abstract: Information storage devices and methods of manufacturing the same are provided. An information storage device includes a magnetic layer formed on an underlayer. The underlayer has at least one first region and at least one second region. The first and second regions have different crystallinity characteristics. The magnetic layer has at least one third region formed on the at least one first region and at least one fourth region formed on the at least one second region. The third and fourth regions have different magnetic anisotropic energy constants.

    Abstract translation: 提供信息存储装置及其制造方法。 信息存储装置包括形成在底层上的磁性层。 底层具有至少一个第一区域和至少一个第二区域。 第一和第二区域具有不同的结晶度特性。 磁性层具有形成在至少一个第一区域上的至少一个第三区域和形成在至少一个第二区域上的至少一个第四区域。 第三和第四区域具有不同的磁各向异性能量常数。

    Memory device employing magnetic domain wall movement
    59.
    发明授权
    Memory device employing magnetic domain wall movement 有权
    采用磁畴壁运动的记忆装置

    公开(公告)号：US07652906B2

    公开(公告)日：2010-01-26

    申请号：US11851049

    申请日：2007-09-06

    Applicant: Chee-kheng Lim ,  Eun-sik Kim ,  Sung-chul Lee

    Inventor： Chee-kheng Lim ,  Eun-sik Kim ,  Sung-chul Lee

    IPC: G11C19/00

    CPC classification number: G11C11/14 ,  G11C19/0808 ,  G11C19/0816 ,  G11C19/0841 ,  Y10S977/933

    Abstract: Provided is a memory device employing magnetic domain wall movement. The memory device includes a first track, an interconnecting layer, and a second track. The first track including a magnetic material is formed in a first direction. The interconnecting layer is formed on the first track. The second track including a magnetic material is formed in a second direction on the interconnecting layer.

    Abstract translation: 提供了采用磁畴壁运动的存储器件。 存储器件包括第一轨道，互连层和第二轨道。 包括磁性材料的第一轨迹形成在第一方向上。 互连层形成在第一轨道上。 包括磁性材料的第二轨道在互连层上沿第二方向形成。

    Information storage devices using magnetic domain wall movement and methods of manufacturing the same
    60.
    发明申请
    Information storage devices using magnetic domain wall movement and methods of manufacturing the same 失效
    使用磁畴壁运动的信息存储装置及其制造方法相同

    公开(公告)号：US20090130492A1

    公开(公告)日：2009-05-21

    申请号：US12149641

    申请日：2008-05-06

    Applicant: Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Chang-won Lee

    Inventor： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Chang-won Lee

    IPC: G11B5/62 ,  G11B5/73 ,  B05D3/10 ,  B05D1/36 ,  B05D3/00

    CPC classification number: G11B5/855 ,  G11B5/7325 ,  G11C11/14 ,  G11C19/0841

    Abstract: Information storage devices and methods of manufacturing the same are provided. An information storage device includes a magnetic layer formed on an underlayer. The underlayer has at least one first region and at least one second region. The first and second regions have different crystallinity characteristics. The magnetic layer has at least one third region formed on the at least one first region and at least one fourth region formed on the at least one second region. The third and fourth regions have different magnetic anisotropic energy constants.

    Abstract translation: 提供信息存储装置及其制造方法。 信息存储装置包括形成在底层上的磁性层。 底层具有至少一个第一区域和至少一个第二区域。 第一和第二区域具有不同的结晶度特性。 磁性层具有形成在至少一个第一区域上的至少一个第三区域和形成在至少一个第二区域上的至少一个第四区域。 第三和第四区域具有不同的磁各向异性能量常数。

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