SEMICONDUCTOR DEVICES WITH VERTICALLY STACKED WAVEGUIDES

    公开(公告)号:US20230221511A1

    公开(公告)日:2023-07-13

    申请号:US17826098

    申请日:2022-05-26

    IPC分类号: G02B6/42 G02B6/43

    摘要: A semiconductor device includes a plurality of intermediate waveguides. The plurality of intermediate waveguides are vertically disposed on top of one another, and vertically adjacent ones of the plurality of intermediate waveguides are laterally offset from each other. When viewed from the top, each of the plurality of intermediate waveguides essentially consists of a first portion and a second portion, the first portion has a first varying width that increases from a first end of the corresponding intermediate waveguide to a middle of the corresponding intermediate waveguide, and the second portion has a second varying width that decreases from the middle of the corresponding intermediate waveguide to a second end of the corresponding intermediate waveguide.

    Optical device, optical system and method of forming the same

    公开(公告)号:US11640033B2

    公开(公告)日:2023-05-02

    申请号:US17140134

    申请日:2021-01-04

    IPC分类号: G02B6/30

    摘要: An optical coupler is provided. The optical coupler includes: a first optical structure, and a second optical structure disposed over the first optical structure. The first optical structure includes: a first substrate, a first cladding layer disposed on the first substrate, and a first waveguide disposed on the first cladding layer. The first waveguide includes a first coupling portion, and the first coupling portion including a first taper part. The second optical structure includes: a second substrate, a dielectric layer disposed on the second substrate; and a second waveguide disposed on the dielectric layer. The second waveguide includes a second coupling portion, and the second coupling portion including a second taper part. The second taper part is disposed on and optically coupled with the first taper part, and a taper direction of the first taper part is the same as a taper direction of the second taper part.

    DEVICES, SYSTEMS, AND METHODS FOR OPTICAL SIGNAL PROCESSING

    公开(公告)号:US20220299709A1

    公开(公告)日:2022-09-22

    申请号:US17410971

    申请日:2021-08-24

    IPC分类号: G02B6/30 G02B6/34

    摘要: A device for optical signal processing includes a first layer, a second layer and a waveguiding layer. A lens is disposed within the first layer and adjacent to a surface of the first layer. The second layer is underneath the first layer and adjacent to another surface of the first layer. The waveguiding layer is located underneath the second layer and configured to waveguide a light beam transmitted in the waveguiding layer. A grating coupler is disposed over the waveguiding layer. The lens is configured to receive, from one of the grating coupler or a light-guiding element, the light beam, and focus the light beam towards another one of the light-guiding element or the grating coupler.

    SEMICONDUCTOR PACAKGE, OPTICAL DEVICE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20220291449A1

    公开(公告)日:2022-09-15

    申请号:US17199365

    申请日:2021-03-11

    摘要: An optical device includes an input array, an output array and a waveguide array. The input array is connected to a first slab structure, while the output array is connected to a second slab structure. The waveguide array is optically coupled to the first slab structure and the second slab structure. The waveguide array includes a first connecting part, a second connecting part and a plurality of waveguide channels. The first connecting part is joined with the first slab structure. The second connecting part is joined with the second slab structure, wherein the second connecting part includes a central portion and at least one flank portion, the central portion is connected to and overlapped with the second slab structure, and the at least one flank portion extends over a side surface of the second slab structure. The waveguide channels are joining the first connecting part to the second connecting part.

    Method of forming a semiconductor device

    公开(公告)号:US11177384B2

    公开(公告)日:2021-11-16

    申请号:US16774855

    申请日:2020-01-28

    摘要: A method of making a semiconductor device includes depositing an isolation region between adjacent fins of a plurality of fins over a substrate, wherein a top-most surface of the isolation region is a first distance from a bottom of the substrate. The method further includes doping each of the plurality of fins with a first dopant having a first dopant type to define a first doped region in each of the plurality of fins, wherein a bottom-most surface of the first doped region is a second distance from the bottom of the substrate, and the second distance is greater than the first distance. The method further includes doping each of the plurality of fins with a second dopant having a second dopant type to define a second doped region in each of the plurality of fins, wherein the second doped region contacts the isolation region.