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公开(公告)号:US20230221511A1
公开(公告)日:2023-07-13
申请号:US17826098
申请日:2022-05-26
CPC分类号: G02B6/4283 , G02B6/43 , G02B6/4238
摘要: A semiconductor device includes a plurality of intermediate waveguides. The plurality of intermediate waveguides are vertically disposed on top of one another, and vertically adjacent ones of the plurality of intermediate waveguides are laterally offset from each other. When viewed from the top, each of the plurality of intermediate waveguides essentially consists of a first portion and a second portion, the first portion has a first varying width that increases from a first end of the corresponding intermediate waveguide to a middle of the corresponding intermediate waveguide, and the second portion has a second varying width that decreases from the middle of the corresponding intermediate waveguide to a second end of the corresponding intermediate waveguide.
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公开(公告)号:US11664566B2
公开(公告)日:2023-05-30
申请号:US17587581
申请日:2022-01-28
发明人: Jiun Yi Wu , Chien-Hsun Lee , Chewn-Pu Jou , Fu-Lung Hsueh
CPC分类号: H01P3/082 , H01P3/026 , H01P3/06 , H01P11/003
摘要: A semiconductor device includes a first transmission line. The semiconductor device includes a second transmission line. The semiconductor device includes a high-k dielectric material between the first transmission line and the second transmission line, wherein the high-k dielectric material partially covers each of the first transmission line and the second transmission line. The semiconductor device further includes a dielectric material directly contacting the high-k dielectric material, wherein the dielectric material has a different dielectric constant from the high-k dielectric material, and the dielectric material directly contacts each of the first transmission line and the second transmission line.
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公开(公告)号:US11640033B2
公开(公告)日:2023-05-02
申请号:US17140134
申请日:2021-01-04
发明人: Feng-Wei Kuo , Chewn-Pu Jou , Cheng-Tse Tang , Hung-Yi Kuo
IPC分类号: G02B6/30
摘要: An optical coupler is provided. The optical coupler includes: a first optical structure, and a second optical structure disposed over the first optical structure. The first optical structure includes: a first substrate, a first cladding layer disposed on the first substrate, and a first waveguide disposed on the first cladding layer. The first waveguide includes a first coupling portion, and the first coupling portion including a first taper part. The second optical structure includes: a second substrate, a dielectric layer disposed on the second substrate; and a second waveguide disposed on the dielectric layer. The second waveguide includes a second coupling portion, and the second coupling portion including a second taper part. The second taper part is disposed on and optically coupled with the first taper part, and a taper direction of the first taper part is the same as a taper direction of the second taper part.
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公开(公告)号:US11616631B2
公开(公告)日:2023-03-28
申请号:US15931273
申请日:2020-05-13
发明人: Huan-Neng Chen , William Wu Shen , Chewn-Pu Jou , Feng Wei Kuo , Lan-Chou Cho , Tze-Chiang Huang , Jack Liu , Yun-Han Lee
摘要: An integrated circuit includes a first through fourth devices positioned over a substrate, the first device including first through third transceivers, the second device including a fourth transceiver, the third device including a fifth transceiver, and the fourth device including a sixth transceiver. A first radio frequency interconnect (RFI) includes the first transceiver coupled to the fourth transceiver through a first guided transmission medium, a second RFI includes the second transceiver coupled to the fifth transceiver through a second guided transmission medium, and a third RFI includes the third transceiver coupled to the sixth transceiver by the second guided transmission medium.
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公开(公告)号:US20220299709A1
公开(公告)日:2022-09-22
申请号:US17410971
申请日:2021-08-24
发明人: Feng-Wei Kuo , Hsing-Kuo Hsia , Chewn-Pu Jou
摘要: A device for optical signal processing includes a first layer, a second layer and a waveguiding layer. A lens is disposed within the first layer and adjacent to a surface of the first layer. The second layer is underneath the first layer and adjacent to another surface of the first layer. The waveguiding layer is located underneath the second layer and configured to waveguide a light beam transmitted in the waveguiding layer. A grating coupler is disposed over the waveguiding layer. The lens is configured to receive, from one of the grating coupler or a light-guiding element, the light beam, and focus the light beam towards another one of the light-guiding element or the grating coupler.
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公开(公告)号:US20220291449A1
公开(公告)日:2022-09-15
申请号:US17199365
申请日:2021-03-11
发明人: Chih-Tsung Shih , Felix Yingkit Tsui , Stefan Rusu , Chewn-Pu Jou
摘要: An optical device includes an input array, an output array and a waveguide array. The input array is connected to a first slab structure, while the output array is connected to a second slab structure. The waveguide array is optically coupled to the first slab structure and the second slab structure. The waveguide array includes a first connecting part, a second connecting part and a plurality of waveguide channels. The first connecting part is joined with the first slab structure. The second connecting part is joined with the second slab structure, wherein the second connecting part includes a central portion and at least one flank portion, the central portion is connected to and overlapped with the second slab structure, and the at least one flank portion extends over a side surface of the second slab structure. The waveguide channels are joining the first connecting part to the second connecting part.
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公开(公告)号:US11387683B2
公开(公告)日:2022-07-12
申请号:US17015602
申请日:2020-09-09
发明人: Min-Jer Wang , Ching-Nen Peng , Chewn-Pu Jou , Feng Wei Kuo , Hao Chen , Hung-Chih Lin , Huan-Neng Chen , Kuang-Kai Yen , Ming-Chieh Liu , Tsung-Hsiung Lee
IPC分类号: G01R31/28 , H02J50/40 , H01L25/065 , H01L23/538 , H02J50/10 , H02J50/80 , G01R31/302 , H01L23/544 , G06F30/39 , H02J50/20 , H01L23/00
摘要: An integrated circuit (IC) includes a first circuit layer that includes a first wireless power transfer (WPT) device, a first chip electrically connected to the first circuit layer, and a first tracking circuit disposed in the first chip. The first WPT device may be configured to extract energy from an electromagnetic signal and provide an output voltage. The first tracking circuit may be powered by the output voltage of the first WPT device and may output tracking data in response to an instruction extracted from the electromagnetic signal.
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公开(公告)号:US11269202B2
公开(公告)日:2022-03-08
申请号:US17094816
申请日:2020-11-11
发明人: Lan-Chou Cho , Chewn-Pu Jou , Feng-Wei Kuo , Huan-Neng Chen , Min-Hsiang Hsu
摘要: An optical modulator includes a dielectric layer and a waveguide. The waveguide is disposed on the dielectric layer. The waveguide includes an electrical coupling portion, a slab portion, and an optical coupling portion. The slab portion is sandwiched between the electrical coupling portion and the optical coupling portion. The slab portion has at least two sub-portions having different heights. A maximum height of the slab portion is smaller than a height of the electrical coupling portion.
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公开(公告)号:US11258151B2
公开(公告)日:2022-02-22
申请号:US16734976
申请日:2020-01-06
发明人: Jiun Yi Wu , Chien-Hsun Lee , Chewn-Pu Jou , Fu-Lung Hsueh
摘要: A semiconductor device includes a first transmission line and a second transmission line. The semiconductor device further includes a high-k dielectric material between the first transmission line and the second transmission line, wherein the high-k dielectric material surrounds the second transmission line. The semiconductor device further includes a dielectric material directly contacting the high-k dielectric material, wherein the dielectric material has a different dielectric constant from the high-k dielectric material, and the dielectric material is separated from the first transmission line and the second transmission line.
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公开(公告)号:US11177384B2
公开(公告)日:2021-11-16
申请号:US16774855
申请日:2020-01-28
发明人: Chewn-Pu Jou , Tzu-Jin Yeh , Chia-Chung Chen
IPC分类号: H01L29/78 , H01L29/66 , H01L27/092 , H01L21/8238 , H01L29/06
摘要: A method of making a semiconductor device includes depositing an isolation region between adjacent fins of a plurality of fins over a substrate, wherein a top-most surface of the isolation region is a first distance from a bottom of the substrate. The method further includes doping each of the plurality of fins with a first dopant having a first dopant type to define a first doped region in each of the plurality of fins, wherein a bottom-most surface of the first doped region is a second distance from the bottom of the substrate, and the second distance is greater than the first distance. The method further includes doping each of the plurality of fins with a second dopant having a second dopant type to define a second doped region in each of the plurality of fins, wherein the second doped region contacts the isolation region.
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