公开(公告)号：US10157859B2

公开(公告)日：2018-12-18

申请号：US15867080

申请日：2018-01-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shou-Zen Chang ,  Chi-Ming Huang ,  Kai-Chiang Wu ,  Sen-Kuei Hsu ,  Hsin-Yu Pan ,  Han-Ping Pu ,  Albert Wan

IPC: H01L23/552 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/538 ,  H01L25/065 ,  H01L25/00

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first device. The semiconductor device structure includes a conductive element over the first device. The semiconductor device structure includes a first conductive shielding layer between the first device and the conductive element. The first conductive shielding layer has openings, and a maximum width of the opening is less than a wavelength of an energy generated by the first device. The semiconductor device structure includes a second conductive shielding layer under the first device. The first device is between the first conductive shielding layer and the second conductive shielding layer, and the second conductive shielding layer has a plurality of second openings.

公开(公告)号：US09875972B1

公开(公告)日：2018-01-23

申请号：US15210067

申请日：2016-07-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shou-Zen Chang ,  Chi-Ming Huang ,  Kai-Chiang Wu ,  Sen-Kuei Hsu ,  Hsin-Yu Pan ,  Han-Ping Pu ,  Albert Wan

IPC: H01L23/552 ,  H01L23/538 ,  H01L23/31 ,  H01L25/065 ,  H01L21/48 ,  H01L21/56 ,  H01L25/00

CPC classification number: H01L23/552 ,  H01L21/485 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/5382 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L25/0657 ,  H01L25/50 ,  H01L2225/06537 ,  H01L2225/06555

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first device. The semiconductor device structure includes a conductive element over the first device. The semiconductor device structure includes a first conductive shielding layer between the first device and the conductive element. The first conductive shielding layer has openings, and a maximum width of the opening is less than a wavelength of an energy generated by the first device.