公开(公告)号：US11502077B2

公开(公告)日：2022-11-15

申请号：US17121495

申请日：2020-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tung Ying Lee ,  Wen-Huei Guo ,  Chih-Hao Chang ,  Shou-Zen Chang

IPC: H01L27/088 ,  H01L29/66 ,  H01L21/84 ,  H01L21/8234 ,  H01L27/06 ,  H01L29/06 ,  H01L27/02 ,  H01L29/78

Abstract: Semiconductor devices and manufacturing and design methods thereof are disclosed. In one embodiment, a semiconductor device includes an active FinFET disposed over a workpiece comprising a first semiconductive material, the active FinFET comprising a first fin. An electrically inactive FinFET structure is disposed over the workpiece proximate the active FinFET, the electrically inactive FinFET comprising a second fin. A second semiconductive material is disposed between the first fin and the second fin.

公开(公告)号：US10312203B2

公开(公告)日：2019-06-04

申请号：US15625678

申请日：2017-06-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.

Inventor： Yung-Ping Chiang ,  Nien-Fang Wu ,  Min-Chien Hsiao ,  Yi-Che Chiang ,  Chao-Wen Shih ,  Shou-Zen Chang ,  Chung-Shi Liu ,  Chen-Hua Yu

IPC: H01L23/66 ,  H01L23/00 ,  H01L23/552 ,  H01L23/31 ,  H01L25/065 ,  H01L23/538 ,  H01L21/683 ,  H01L21/56

Abstract: Structures and formation methods of a chip package are provided. The chip package includes a semiconductor die having a conductive element and a first protective layer surrounding the semiconductor die. The chip package also includes a second protective layer over the semiconductor die and the first protective layer. The chip package further includes an antenna element over the second protective layer. The antenna element is electrically connected to the conductive element of the semiconductor die.

公开(公告)号：US20190097304A1

公开(公告)日：2019-03-28

申请号：US15717976

申请日：2017-09-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Min-Chien Hsiao ,  Chen-Hua Yu ,  Chung-Shi Liu ,  Chao-Wen Shih ,  Shou-Zen Chang

IPC: H01Q1/22 ,  H01L23/498 ,  H01L23/31 ,  H01L23/66 ,  H01L21/56

Abstract: In accordance with some embodiments, a package structure includes an RFIC chip. an insulating encapsulation, a redistribution circuit structure, an antenna and a microwave director. The insulating encapsulation encapsulates the RFIC chip. The redistribution circuit structure is disposed on the insulating encapsulation and electrically connected to the RFIC chip. The antenna is disposed on the insulating encapsulation and electrically connected to the RFIC chip through the redistribution circuit structure. The antenna is located between the microwave director and the RFIC chip. The microwave director has a microwave directivity enhancement surface located at a propagating path of a microwave received or generated by the antenna.

公开(公告)号：US20180158787A1

公开(公告)日：2018-06-07

申请号：US15367196

申请日：2016-12-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shou-Zen Chang ,  Chung-Hao Tsai ,  Chuei-Tang Wang ,  Kai-Chiang Wu ,  Ming-Kai Liu

IPC: H01L23/66 ,  H01Q1/24 ,  H01L21/48 ,  H01L23/498 ,  H01L23/528 ,  H01L23/00 ,  H01L23/552 ,  H01L21/56

CPC classification number: H01L23/66 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/568 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/5286 ,  H01L23/552 ,  H01L24/19 ,  H01L2021/60022 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244 ,  H01L2924/3025 ,  H01Q1/2283

Abstract: An integrated fan-out package including an insulating encapsulation, a radio frequency integrated circuit (RF-IC), an antenna, a ground conductor, and a redistribution circuit structure is provided. The integrated circuit includes a plurality of conductive terminals. The RF-IC, the antenna, and the ground conductor are embedded in the insulating encapsulation. The ground conductor is between the RF-IC and the antenna. The redistribution circuit structure is disposed on the insulating encapsulation, and the redistribution circuit structure is electrically connected to the conductive terminals, the antenna, and the ground conductor. A method of fabricating the integrated fan-out package is also provided

公开(公告)号：US20170345731A1

公开(公告)日：2017-11-30

申请号：US15235106

申请日：2016-08-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yung-Ping Chiang ,  Chao-Wen Shih ,  Shou-Zen Chang ,  Albert Wan ,  Yu-Sheng Hsieh

IPC: H01L23/31 ,  H01L23/528 ,  H01Q9/04 ,  H01L23/00 ,  H01L21/768 ,  H01L23/48 ,  H01L23/66

CPC classification number: H01L23/3107 ,  H01L21/568 ,  H01L21/768 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/528 ,  H01L23/66 ,  H01L24/14 ,  H01L2223/6627 ,  H01L2223/6677 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01Q1/2283 ,  H01Q9/04 ,  H01Q21/065

Abstract: Sensor packages and manufacturing methods thereof are disclosed. One of the sensor packages includes a semiconductor chip and a redistribution layer structure. The semiconductor chip has a sensing surface. The redistribution layer structure is arranged to form an antenna transmitter structure aside the semiconductor chip and an antenna receiver structure over the sensing surface of the semiconductor chip.

公开(公告)号：US20210098452A1

公开(公告)日：2021-04-01

申请号：US17121495

申请日：2020-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tung Ying Lee ,  Wen-Huei Guo ,  Chih-Hao Chang ,  Shou-Zen Chang

IPC: H01L27/088 ,  H01L29/66 ,  H01L21/84 ,  H01L21/8234 ,  H01L27/06 ,  H01L29/06 ,  H01L27/02 ,  H01L29/78

Abstract: Semiconductor devices and manufacturing and design methods thereof are disclosed. In one embodiment, a semiconductor device includes an active FinFET disposed over a workpiece comprising a first semiconductive material, the active FinFET comprising a first fin. An electrically inactive FinFET structure is disposed over the workpiece proximate the active FinFET, the electrically inactive FinFET comprising a second fin. A second semiconductive material is disposed between the first fin and the second fin.

公开(公告)号：US20200258799A1

公开(公告)日：2020-08-13

申请号：US16858743

申请日：2020-04-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yung-Ping Chiang ,  Chao-Wen Shih ,  Shou-Zen Chang ,  Albert Wan ,  Yu-Sheng Hsieh

IPC: H01L23/31 ,  H01Q1/22 ,  H01Q21/06 ,  H01L21/768 ,  H01L23/48 ,  H01L23/528 ,  H01L23/66 ,  H01L23/00 ,  H01Q9/04

Abstract: A semiconductor package includes a semiconductor chip and a redistribution layer structure. The redistribution layer structure is arranged to form an antenna transmitter structure and an antenna receiver structure over the semiconductor chip, wherein patterns of the antenna receiver structure are located at different levels of the redistribution layer structure, and at least one pattern of the antenna transmitter structure is at the same level of the topmost patterns of the antenna receiver structure.

公开(公告)号：US10304790B2

公开(公告)日：2019-05-28

申请号：US16226655

申请日：2018-12-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shou-Zen Chang ,  Chung-Hao Tsai ,  Chuei-Tang Wang ,  Kai-Chiang Wu ,  Ming-Kai Liu

IPC: H01L23/66 ,  H01Q1/24 ,  H01L21/48 ,  H01L23/498 ,  H01L23/528 ,  H01L23/00 ,  H01L23/552 ,  H01L21/56 ,  H01Q1/22 ,  H01L21/60

Abstract: An integrated fan-out package including an insulating encapsulation, a radio frequency integrated circuit (RF-IC), an antenna, a ground conductor, and a redistribution circuit structure is provided. The integrated circuit includes a plurality of conductive terminals. The RF-IC, the antenna, and the ground conductor are embedded in the insulating encapsulation. The ground conductor is between the RF-IC and the antenna. The redistribution circuit structure is disposed on the insulating encapsulation, and the redistribution circuit structure is electrically connected to the conductive terminals, the antenna, and the ground conductor. A method of fabricating the integrated fan-out package is also provided.

公开(公告)号：US20190157224A1

公开(公告)日：2019-05-23

申请号：US16252728

申请日：2019-01-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Albert Wan ,  Chao-Wen Shih ,  Shou-Zen Chang ,  Nan-Chin Chuang

IPC: H01L23/66 ,  H01Q1/22 ,  H01L23/48 ,  H01L23/00 ,  H01L23/31 ,  H01L23/60 ,  H01L21/56 ,  H01L21/683

CPC classification number: H01L23/66 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L22/32 ,  H01L23/3135 ,  H01L23/315 ,  H01L23/481 ,  H01L23/60 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/20 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2223/6677 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/11002 ,  H01L2224/12105 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/16227 ,  H01L2224/211 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/81005 ,  H01L2224/92244 ,  H01L2924/141 ,  H01L2924/1421 ,  H01L2924/143 ,  H01L2924/1431 ,  H01L2924/1433 ,  H01L2924/1434 ,  H01L2924/15321 ,  H01Q1/2283 ,  H01Q1/40 ,  H01Q9/30

Abstract: A package structure includes at least one die, an antenna element, and at least one through interlayer via. The antenna element is located on the at least one die. The at least one through interlayer via is located between the antenna element and the at least one die, wherein the antenna element is electrically connected to the at least one die through the at least one through interlayer via.

公开(公告)号：US20190115271A1

公开(公告)日：2019-04-18

申请号：US16219979

申请日：2018-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yung-Ping Chiang ,  Chao-Wen Shih ,  Shou-Zen Chang ,  Albert Wan ,  Yu-Sheng Hsieh

IPC: H01L23/31 ,  H01Q21/06 ,  H01Q9/04 ,  H01Q1/22 ,  H01L21/768 ,  H01L23/00 ,  H01L23/66 ,  H01L23/528 ,  H01L23/48

Abstract: Sensor packages and manufacturing methods thereof are disclosed. One of the sensor packages includes a semiconductor chip and a redistribution layer structure. The semiconductor chip has a sensing surface. The redistribution layer structure is arranged to form an antenna transmitter structure aside the semiconductor chip and an antenna receiver structure over the sensing surface of the semiconductor chip.