公开(公告)号：US11373946B2

公开(公告)日：2022-06-28

申请号：US16830284

申请日：2020-03-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Ming Huang ,  Ping-Kang Huang ,  Sao-Ling Chiu ,  Shang-Yun Hou

IPC: H01L23/498 ,  H01L23/31 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78

Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes at least one semiconductor die, an interposer, a molding compound and connectors. The interposer has a first surface, a second surface opposite to the first surface and sidewalls connecting the first and second surfaces. The at least one semiconductor die is disposed on the first surface of interposer and electrically connected with the interposer. The molding compound is disposed over the interposer and laterally encapsulates the at least one semiconductor die. The molding compound laterally wraps around the interposer and the molding compound at least physically contacts a portion of the sidewalls of the interposer. The connectors are disposed on the second surface of the interposer, and are electrically connected with the at least one semiconductor die through the interposer.

公开(公告)号：US20210305145A1

公开(公告)日：2021-09-30

申请号：US16830284

申请日：2020-03-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Ming Huang ,  Ping-Kang Huang ,  Sao-Ling Chiu ,  Shang-Yun Hou

IPC: H01L23/498 ,  H01L23/31 ,  H01L21/56 ,  H01L21/78 ,  H01L21/48

Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes at least one semiconductor die, an interposer, a molding compound and connectors. The interposer has a first surface, a second surface opposite to the first surface and sidewalls connecting the first and second surfaces. The at least one semiconductor die is disposed on the first surface of interposer and electrically connected with the interposer. The molding compound is disposed over the interposer and laterally encapsulates the at least one semiconductor die. The molding compound laterally wraps around the interposer and the molding compound at least physically contacts a portion of the sidewalls of the interposer. The connectors are disposed on the second surface of the interposer, and are electrically connected with the at least one semiconductor die through the interposer.

公开(公告)号：US10157859B2

公开(公告)日：2018-12-18

申请号：US15867080

申请日：2018-01-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shou-Zen Chang ,  Chi-Ming Huang ,  Kai-Chiang Wu ,  Sen-Kuei Hsu ,  Hsin-Yu Pan ,  Han-Ping Pu ,  Albert Wan

IPC: H01L23/552 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/538 ,  H01L25/065 ,  H01L25/00

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first device. The semiconductor device structure includes a conductive element over the first device. The semiconductor device structure includes a first conductive shielding layer between the first device and the conductive element. The first conductive shielding layer has openings, and a maximum width of the opening is less than a wavelength of an energy generated by the first device. The semiconductor device structure includes a second conductive shielding layer under the first device. The first device is between the first conductive shielding layer and the second conductive shielding layer, and the second conductive shielding layer has a plurality of second openings.

公开(公告)号：US09875972B1

公开(公告)日：2018-01-23

申请号：US15210067

申请日：2016-07-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shou-Zen Chang ,  Chi-Ming Huang ,  Kai-Chiang Wu ,  Sen-Kuei Hsu ,  Hsin-Yu Pan ,  Han-Ping Pu ,  Albert Wan

IPC: H01L23/552 ,  H01L23/538 ,  H01L23/31 ,  H01L25/065 ,  H01L21/48 ,  H01L21/56 ,  H01L25/00

CPC classification number: H01L23/552 ,  H01L21/485 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/5382 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L25/0657 ,  H01L25/50 ,  H01L2225/06537 ,  H01L2225/06555

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first device. The semiconductor device structure includes a conductive element over the first device. The semiconductor device structure includes a first conductive shielding layer between the first device and the conductive element. The first conductive shielding layer has openings, and a maximum width of the opening is less than a wavelength of an energy generated by the first device.