公开(公告)号：US20200098801A1

公开(公告)日：2020-03-26

申请号：US16695575

申请日：2019-11-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Wei-Chieh Chiang ,  Cheng Yu Huang ,  Wen-Hau Wu ,  Chih-Kung Chang ,  Jhy-Jyi Sze

IPC: H01L27/146

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip has an image sensor within a substrate. A first dielectric has an upper surface that extends over a first side of the substrate and over one or more trenches within the first side of the substrate. The one or more trenches laterally surround the image sensor. An internal reflection structure arranged over the upper surface of the first dielectric. The internal reflection structure is configured to reflect radiation exiting from the substrate back into the substrate.

公开(公告)号：US20200035733A1

公开(公告)日：2020-01-30

申请号：US16156061

申请日：2018-10-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Hau Wu

IPC: H01L27/146

Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

公开(公告)号：US20190378863A1

公开(公告)日：2019-12-12

申请号：US16516451

申请日：2019-07-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Wei-Chieh Chiang ,  Cheng Yu Huang ,  Wen-Hau Wu ,  Chih-Kung Chang ,  Jhy-Jyi Sze

IPC: H01L27/146

Abstract: In some embodiments, the present disclosure relates to an image sensor integrated chip. The integrated chip has an image sensing element arranged within a substrate. A first dielectric is disposed in one or more trenches within a first side of the substrate. The one or more trenches laterally surround the image sensing element. The substrate includes a recessed portion arranged along the first side of the substrate and defined by second sidewalls of the substrate directly over the image sensing element. The second sidewalls of the substrate are angled to meet at a point disposed along a horizontal plane that intersects the first dielectric within the one or more trenches.

公开(公告)号：US10367023B1

公开(公告)日：2019-07-30

申请号：US16005857

申请日：2018-06-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Wei-Chieh Chiang ,  Cheng Yu Huang ,  Wen-Hau Wu ,  Chih-Kung Chang ,  Jhy-Jyi Sze

IPC: H01L27/146

Abstract: In some embodiments, the present disclosure relates to an image sensor integrated chip. The integrated chip has an image sensing element arranged within a pixel region of a substrate. A first dielectric is disposed in trenches within a first side of the substrate. The trenches are defined by first sidewalls disposed on opposing sides of the pixel region. An internal reflection enhancement structure is arranged along the first side of the substrate and is configured to reflect radiation exiting from the substrate back into the substrate.

公开(公告)号：US09905605B2

公开(公告)日：2018-02-27

申请号：US14883849

申请日：2015-10-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-I Hsu ,  Dun-Nian Yaung ,  Feng-Chi Hung ,  Keng-Yu Chou

IPC: H01L31/0232 ,  H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14685

Abstract: The present disclosure relates to an image sensor having autofocus function and associated methods. In some embodiments, the integrated circuit has a photodiode array with a plurality of photodiodes disposed within a semiconductor substrate and a composite grid overlying the photodiode array and having a first plurality of openings and a second plurality of openings extending vertically through the composite grid. The integrated circuit further has an image sensing pixel array with a plurality of color filters disposed in the first plurality of openings. The integrated circuit further has a phase detection pixel array having a plurality of phase detection components that are smaller than the plurality of color filters and that have a low refractive index (low-n) material with a refractive index (n) smaller than a refractive index of the plurality of color filters, wherein the phase detection components are disposed in the second plurality of openings.

公开(公告)号：US09893111B2

公开(公告)日：2018-02-13

申请号：US15097319

申请日：2016-04-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Dun-Nian Yaung ,  Wei-Chieh Chiang

IPC: H01L27/148 ,  H01L27/146 ,  H04N5/374 ,  G03B13/36

CPC classification number: H01L27/14645 ,  G03B13/36 ,  H01L27/14603 ,  H01L27/14614 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H04N5/3696 ,  H04N5/374 ,  H04N5/37457

Abstract: The present disclosure relates to an image sensor having autofocus function and associated methods. In some embodiments, the image sensor has first and second image sensing pixels arranged one next to another in a row. Each of the first and second image sensing pixels respectively have a left PD (phase detection) pixel including a left photodiode operably coupled to a left transfer gate, and a right PD pixel including a right photodiode operably coupled to a right transfer gate. The right transfer gate of the second image sensing pixel is a mirror image of the left transfer gate of the first image sensing pixel along a boundary line between the first and second image sensing pixels. The left transfer gate of the second image sensing pixel is a mirror image of the right transfer gate of the first image sensing pixel along the boundary line.

公开(公告)号：US09536915B2

公开(公告)日：2017-01-03

申请号：US15147888

申请日：2016-05-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Keng-Yu Chou ,  Kazuaki Hashimoto ,  Jen-Cheng Liu ,  Jhy-Jyi Sze ,  Wei-Chieh Chiang ,  Pao-Tung Chen

IPC: H04N5/33 ,  H01L27/146 ,  H04N5/335 ,  G02B1/11 ,  H04N9/04 ,  G02B5/20 ,  G02B5/28 ,  G02B27/10 ,  G02B27/12 ,  H04N5/225

CPC classification number: H01L27/14621 ,  G02B1/11 ,  G02B5/201 ,  G02B5/208 ,  G02B5/22 ,  G02B5/282 ,  G02B27/1013 ,  G02B27/123 ,  H01L27/1462 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14649 ,  H01L27/14685 ,  H04N5/2253 ,  H04N5/2254 ,  H04N5/33 ,  H04N5/335 ,  H04N9/045 ,  H04N2209/042

Abstract: An image sensor includes a substrate, photosensitive devices, a color filter layer, a micro-lens layer and an infrared filter layer. The photosensitive devices are disposed in the substrate. The color filter layer is disposed to cover the photosensitive devices. The micro-lens layer is disposed on the color filter layer. The infrared filter layer directly covers the micro-lens layer.

Abstract translation: 图像传感器包括基板，感光装置，滤色器层，微透镜层和红外滤光层。 感光装置设置在基板中。 滤色器层设置成覆盖感光装置。 微透镜层设置在滤色器层上。 红外滤光层直接覆盖微透镜层。

公开(公告)号：US20160276394A1

公开(公告)日：2016-09-22

申请号：US14663899

申请日：2015-03-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Shyh-Fann Ting ,  Wei-Chieh Chiang ,  Yuichiro Yamashita

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685

Abstract: A semiconductor structure for back side illumination (BSI) pixel sensors is provided. Photodiodes are arranged within a semiconductor substrate. A metal grid overlies the semiconductor substrate and is made up of metal grid segments that surround outer perimeters of the photodiodes, respectively, such that first openings within the metal grid overlie the photodiodes, respectively. A low-n grid is made up of low-n grid segments that surround the respective outer perimeters of the photodiodes, respectively, such that second openings within the low-n grid overlie the photodiodes, respectively. Color filters are arranged in the first and second openings of the photodiodes and have a refractive index greater than a refractive index of the low-n grid. A substrate isolation grid extends into the semiconductor substrate and is made up of isolation grid segments that surround outer perimeters of the photodiodes, respectively. A method for manufacturing the BSI pixel sensors is also provided.

Abstract translation: 提供了用于背面照明（BSI）像素传感器的半导体结构。 光电二极管布置在半导体衬底内。 金属网格覆盖半导体衬底，并且由分别围绕光电二极管的外周的金属栅格段组成，使得金属栅格内的第一开口分别覆盖在光电二极管上。 低n栅格分别由围绕光电二极管的相应外周的低n栅格段组成，使得低n栅格内的第二开口分别覆盖光电二极管。 滤光器布置在光电二极管的第一和第二开口中并且具有大于低n栅格的折射率的折射率。 衬底隔离栅格延伸到半导体衬底中，并且由分别围绕光电二极管外周的隔离栅格段组成。 还提供了用于制造BSI像素传感器的方法。