公开(公告)号：US07804667B2

公开(公告)日：2010-09-28

申请号：US11725476

申请日：2007-03-20

申请人： Kei Hirata ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Koji Shimazawa

发明人： Kei Hirata ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Koji Shimazawa

IPC分类号： G11B5/39

CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G11B5/3929 ,  G11B2005/3996

摘要： An MR element incorporates a nonmagnetic conductive layer, and a pinned layer and a free layer that are disposed to sandwich the nonmagnetic conductive layer. Each of the pinned layer and the free layer includes a Heusler alloy layer. The Heusler alloy layer contains a Heusler alloy in which atoms of a magnetic metallic element are placed at body-centered positions of unit cells, and an additive element that is a nonmagnetic metallic element that does not constitute the Heusler alloy. At least one of the pinned layer and the free layer includes a region in which the concentration of the additive element increases as the distance from the nonmagnetic conductive layer decreases, the region being adjacent to the nonmagnetic conductive layer.

摘要翻译： MR元件包括非磁性导电层，以及设置成夹持非磁性导电层的被钉扎层和自由层。 每个被钉扎层和自由层包括Heusler合金层。 Heusler合金层包含Heusler合金，其中磁性金属元素的原子被放置在单元电池的体中心位置，而添加元素是不构成Heusler合金的非磁性金属元素。 被钉扎层和自由层中的至少一个包括随着距离非磁性导电层的距离减小的添加元素的浓度增加的区域，该区域与非磁性导电层相邻。

公开(公告)号：US07764470B2

公开(公告)日：2010-07-27

申请号：US11682421

申请日：2007-03-06

申请人： Tomohito Mizuno ,  Kei Hirata ,  Yoshihiro Tsuchiya ,  Koji Shimazawa

发明人： Tomohito Mizuno ,  Kei Hirata ,  Yoshihiro Tsuchiya ,  Koji Shimazawa

IPC分类号： G11B5/33

CPC分类号： G11B5/59683

摘要： A magneto-resistance effect element used for a thin film magnetic head is configured by a buffer layer, an anti-ferromagnetic layer, a pinned layer, a spacer layer, a free layer, and a cap layer, which are laminated in this order, and a sense current flows through the element in a direction orthogonal to the layer surface, via a lower shield layer and a upper shield layer. The pinned layer comprises an outer layer in which a magnetization direction is fixed, a non-magnetic intermediate layer, and an inner layer which is a ferromagnetic layer. The spacer layer comprises a first and second non-magnetic metal layer, and a semiconductor layer. The first and second non-magnetic metal layer and comprise CuPt films having a thickness of more than 0 nm but no more than 2.0 nm, and the Pt content ranges from a minimum of 5 to a maximum of 25 at %.

摘要翻译： 用于薄膜磁头的磁阻效应元件由依次层叠的缓冲层，反铁磁层，被钉扎层，间隔层，自由层和盖层构成， 并且感测电流经由下屏蔽层和上屏蔽层沿着与层表面正交的方向流过元件。 被钉扎层包括其中磁化方向固定的外层，非磁性中间层和作为铁磁层的内层。 间隔层包括第一和第二非磁性金属层和半导体层。 第一和第二非磁性金属层并且包括厚度大于0nm但不超过2.0nm的CuPt膜，并且Pt含量最小为5至最大为25at％。

公开(公告)号：US20100177440A1

公开(公告)日：2010-07-15

申请号：US12318924

申请日：2009-01-13

申请人： Takayasu Kanaya ,  Kei Hirata ,  Yohei Koyanagi ,  Seiichi Takayama ,  Shinji Hara ,  Toshiyuki Ayukawa

发明人： Takayasu Kanaya ,  Kei Hirata ,  Yohei Koyanagi ,  Seiichi Takayama ,  Shinji Hara ,  Toshiyuki Ayukawa

IPC分类号： G11B5/127 ,  G11B5/48 ,  G11B5/60

CPC分类号： G11B5/3932 ,  G01R33/098

摘要： Foundation layers of a thin film magnetic head are disposed between insulating layers and bias magnetic field application layers, and are configured of Cr or Cr alloy. The insulating layers are configured of a Si oxide such that the Si content of the Si oxide is in the range of 30˜56 at % (atom %) and that the atom ratio of oxygen to Si (O/Si) is in the range of 0.8˜1.3. With the configuration, the occurrence rate of noise is reduced.

摘要翻译： 薄膜磁头的底层设置在绝缘层和偏置磁场施加层之间，并由Cr或Cr合金构成。 绝缘层由Si氧化物构成，使得Si氧化物的Si含量在30〜56at％（原子％）的范围内，氧与Si（O / Si）的原子比在范围内 为0.8〜1.3。 通过该结构，噪声的发生率降低。

公开(公告)号：US20100080644A1

公开(公告)日：2010-04-01

申请号：US12421860

申请日：2009-04-10

申请人： Hirokazu Murase ,  Kei Hirata

发明人： Hirokazu Murase ,  Kei Hirata

IPC分类号： B41J13/10

CPC分类号： G03G15/0886 ,  G03G15/0872 ,  G03G15/0879 ,  G03G2215/0668

摘要： An accommodating container includes: a container main body that has an opening at a part thereof; a cap member; and a seal member, wherein the seal member includes a plurality of seal abutment pieces that abut on a wall surface of the cap member or a wall surface of the container main body, and are elastically deformable, and at least one of the seal abutment pieces is arranged in non-contact with the wall surface of the cap member or the wall surface of the container main body in a first state before the cap member is attached to the container main body, and is arranged in contact with the wall surface of the cap member or the wall surface of the container main body in a second state where the cap member has been attached in an attachment position of the container main body.

摘要翻译： 容纳容器包括：容器主体，其一部分具有开口; 帽子; 密封构件，其中密封构件包括邻接盖构件的壁表面或容器主体的壁表面并且可弹性变形的多个密封邻接件，并且至少一个密封抵靠件 在盖构件安装到容器主体之前，在第一状态下被布置成与盖构件的壁表面或容器主体的壁表面非接触，并且被布置成与容器主体的壁表面接触 帽部件或容器主体的壁面，在第二状态下，盖部件已经被安装在容器主体的安装位置。

公开(公告)号：US20090273864A1

公开(公告)日：2009-11-05

申请号：US12005274

申请日：2007-12-27

申请人： Takahiko Machita ,  Kei Hirata ,  Koji Shimazawa ,  Daisuke Miyauchi

发明人： Takahiko Machita ,  Kei Hirata ,  Koji Shimazawa ,  Daisuke Miyauchi

IPC分类号： G11B5/33 ,  B44C1/22

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3912 ,  G11B5/3932 ,  H01L43/12

摘要： A magnetoresistive element includes a first and a second shield, and an MR stack disposed between the shields. The MR stack includes a first and a second ferromagnetic layer, and a nonmagnetic spacer layer disposed between the ferromagnetic layers. The first and second ferromagnetic layers have magnetizations that are in directions antiparallel to each other when no external magnetic field is applied to the layers, and that change directions in response to an external magnetic field. An insulating layer is formed to touch a rear end face of the MR stack and the first shield, and a bias magnetic field applying layer is formed above the insulating layer with a buffer layer disposed in between. The bias magnetic field applying layer includes a hard magnetic layer and a high saturation magnetization layer. The high saturation magnetization layer is located between the rear end face and the hard magnetic layer, but not located between the first shield and the hard magnetic layer.

摘要翻译： 磁阻元件包括第一和第二屏蔽以及设置在屏蔽之间的MR堆叠。 MR堆叠包括第一和第二铁磁层，以及设置在铁磁层之间的非磁性间隔层。 当没有外部磁场施加到层上时，第一和第二铁磁层具有在彼此反平行的方向上的磁化，并且响应于外部磁场改变方向。 形成绝缘层以接触MR堆叠和第一屏蔽的后端面，并且在绝缘层上形成有偏置磁场施加层，其间设置有缓冲层。 偏置磁场施加层包括硬磁性层和高饱和磁化层。 高饱和磁化层位于后端面和硬磁性层之间，但不位于第一屏蔽和硬磁性层之间。

公开(公告)号：US07583478B2

公开(公告)日：2009-09-01

申请号：US11482090

申请日：2006-07-07

申请人： Takahiko Machita ,  Kei Hirata ,  Koji Shimazawa

发明人： Takahiko Machita ,  Kei Hirata ,  Koji Shimazawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/1278 ,  G11B5/3912 ,  G11B2005/3996

摘要： A thin-film magnetic head comprises: a magnetoresistive element: first and second read shield layers disposed to sandwich the magnetoresistive element; and bias field applying layers for applying a bias magnetic field to the magnetoresistive element. Each of the first and second read shield layers has: a first end face located in a medium facing surface; a second end face opposite to the first end face; a first width changing portion that continuously decreases in width as the distance from the first end face decreases; and a second width changing portion that continuously decreases in width as the distance from the second end face decreases.

摘要翻译： 薄膜磁头包括：磁阻元件：设置成夹着磁阻元件的第一和第二读屏蔽层; 以及用于向磁阻元件施加偏置磁场的偏置场施加层。 第一和第二读取屏蔽层中的每一个具有：位于介质面对表面中的第一端面; 与第一端面相对的第二端面; 第一宽度改变部分，随着距离第一端面的距离减小，其宽度连续减小; 以及随着与第二端面的距离的减小，宽度连续减小的第二宽度改变部分。

公开(公告)号：US07573686B2

公开(公告)日：2009-08-11

申请号：US11474487

申请日：2006-06-26

申请人： Kei Hirata ,  Satoshi Miura ,  Naoki Ota

发明人： Kei Hirata ,  Satoshi Miura ,  Naoki Ota

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906

摘要： An MR element comprises: a tunnel barrier layer having two surfaces facing toward opposite directions; a free layer disposed adjacent to one of the surfaces of the tunnel barrier layer and having a direction of magnetization that changes in response to a signal magnetic field; and a pinned layer disposed adjacent to the other of the surfaces of the tunnel barrier layer and having a fixed direction of magnetization. The tunnel barrier layer is made of a material containing an oxide semiconductor such as ZnO. The MR element has a resistance-area product that falls within a range of 0.3 to 2.0 Ω-μm2 inclusive.

摘要翻译： MR元件包括：具有面向相反方向的两个表面的隧道势垒层; 邻近所述隧道势垒层的一个表面并且具有响应于信号磁场而改变的磁化方向的自由层; 以及与隧道势垒层的另一个表面相邻并且具有固定的磁化方向的被钉扎层。 隧道势垒层由含有ZnO等氧化物半导体的材料构成。 MR元件的电阻面积为0.3〜2.0Ωm2（含）的范围。

公开(公告)号：US07542233B2

公开(公告)日：2009-06-02

申请号：US11337659

申请日：2006-01-24

申请人： Kei Hirata ,  Takahiko Machita ,  Kiyoshi Noguchi

发明人： Kei Hirata ,  Takahiko Machita ,  Kiyoshi Noguchi

IPC分类号： G11B5/17

CPC分类号： G11B5/1278

摘要： A perpendicular magnetic recording element includes a recording magnetic pole film and a write shield film. The recording magnetic pole film has a yoke portion and a main magnetic pole for perpendicular recording. The main magnetic pole projects from a front end of the yoke portion to have an end on a medium-facing surface. The write shield film faces the recording magnetic pole film and has a height equal to or smaller than that of the recording magnetic pole film, as measured rearward from the medium-facing surface.

摘要翻译： 垂直磁记录元件包括记录磁极膜和写保护膜。 记录磁极膜具有用于垂直记录的磁轭部分和主磁极。 主磁极从磁轭部的前端突出，以在中间面的表面上具有一端。 写入屏蔽膜面向记录磁极膜，并且具有与记录磁极膜相同或更小的高度，从中间面向后测量。

公开(公告)号：US20080305442A1

公开(公告)日：2008-12-11

申请号：US11806959

申请日：2007-06-05

申请人： Kazuki Sato ,  Akifumi Kamijima ,  Takayasu Kanaya ,  Kei Hirata

发明人： Kazuki Sato ,  Akifumi Kamijima ,  Takayasu Kanaya ,  Kei Hirata

IPC分类号： G03C5/00

CPC分类号： H01L29/82 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/1278 ,  G11B5/3163 ,  G11B5/3967 ,  H01F41/34 ,  H01L21/0331 ,  H01L43/12

摘要： A formation method for a patterned material layer comprising a step of exposing a composite layer to light in a predetermined pattern, the composite layer including a first photosensitive resin layer, a protective film, and an upper resin layer; a step of partly removing the exposed composite layer so as to form an opening exposing the substrate and form a groove along the main surface of the substrate on a side face of the opening by depressing the end portion of the upper resin layer on the substrate side, thereby forming a resist frame comprising the composite layer formed with the opening; a step of forming a vacuum coated layer having a material pattern part formed on the substrate in the opening and a part to lift off formed on the resist frame, by vacuum coating process; and a step of removing the part to lift off together with the resist frame, so as to yield a patterned material layer.

摘要翻译： 一种图案化材料层的形成方法，包括将复合层以预定图案曝光的步骤，所述复合层包括第一感光树脂层，保护膜和上树脂层; 一部分去除露出的复合层以形成露出基板的开口，并通过在基板侧压下上树脂层的端部，沿着开口的侧面沿基板的主表面形成凹槽 从而形成包括形成有开口的复合层的抗蚀剂框架; 通过真空镀膜工艺形成真空涂层的步骤，该真空涂层具有形成在开口中的基板上的材料图案部分和形成在抗蚀框架上的部分; 以及除去该部分以与抗蚀剂框架一起剥离的步骤，以产生图案化的材料层。

公开(公告)号：US20080056771A1

公开(公告)日：2008-03-06

申请号：US11785169

申请日：2007-04-16

申请人： Kiyoshi Chatani ,  Kei Hirata ,  Takashi Sakamoto ,  Hideaki Miyata

发明人： Kiyoshi Chatani ,  Kei Hirata ,  Takashi Sakamoto ,  Hideaki Miyata

IPC分类号： G03G15/08 ,  G03G21/00

CPC分类号： G03G15/0893 ,  G03G15/0868 ,  G03G2215/0827

摘要： An image forming member includes: an electrostatic latent image holding member that holds an electrostatic latent image; a developing unit that develops a toner image formed by a toner on a surface of the electrostatic latent image holding member; a toner removing member that removes a residual toner remaining on a surface of the electrostatic latent image holding member; a conveying path including a conveying member that is internally provided in the conveying path and that returns the residual toner removed from the surface of the electrostatic latent image holding member to the developing unit; and a trapping portion that traps a foreign matter conveyed by the conveying member, the electrostatic latent image holding member, the developing unit, the toner removing member, the conveying path, and the trapping portion of the image forming member being integrally and detachably attached to an image forming apparatus body.

摘要翻译： 图像形成构件包括：静电潜像保持构件，其保持静电潜像; 显影单元，其显影由静电潜像保持部件的表面上的调色剂形成的调色剂图像; 去除残留在静电潜像保持部件的表面上的残留调色剂的调色剂除去部件; 输送路径，包括内部设置在所述输送路径中并将从所述静电潜像保持构件的表面移除的残留调色剂返回到所述显影单元的输送构件; 以及捕获部，其捕获由所述输送构件，所述静电潜像保持构件，所述显影单元，所述调色剂移除构件，所述输送路径和所述图像形成构件的所述捕获部分输送的异物一体地可拆卸地附接到 图像形成装置主体。