Method for manufacturing semiconductor device
    52.
    发明申请
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US20070295973A1

    公开(公告)日:2007-12-27

    申请号:US11705828

    申请日:2007-02-14

    IPC分类号: H01L33/00 H01L21/30

    摘要: The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.

    摘要翻译: 本发明提供一种使用剥离工艺的半导体器件和显示装置的制造技术,其中可以以保持剥离之前元件的形状和特性的良好状态进行转印处理。 此外,本发明提供了一种更高可靠性的高可靠性的半导体器件和显示器件的制造技术,而不会使器件和制造过程复杂化。 根据本发明,在具有透光性的第一基板上形成包含光催化剂物质的有机化合物层,在包含光催化剂物质的有机化合物层上形成元素层,所述有机化合物层包含光催化剂物质 被穿过第一衬底的光照射,并且元件层从第一衬底剥离。

    Semiconductor device, display device and method for manufacturing thereof, and television device

    公开(公告)号:US20060113894A1

    公开(公告)日:2006-06-01

    申请号:US11271800

    申请日:2005-11-14

    IPC分类号: H05B33/00 H01J1/62

    摘要: The purpose of the present invention is to provide a semiconductor device or a display device that can be manufactured by improving the use efficiency of a material as well as simplifying the manufacturing process, and a manufacturing technique of those devices. Also, another purpose of the present invention is to provide a technique for forming a pattern of wirings, etc., constituting the semiconductor device or the display device, in a desired shape and with good adhesiveness. The adhesiveness between first and second conductive layers is increased by forming a conductive buffer layer including at least one pore between them. The second conductive layer is formed by filling the pores of the buffer layer including at least one pore with a particle shaped conductive material which is solidified by baking. The conductive layer solidified in the pores functions like a wedge, and the second conductive layer is formed over the first conductive layer with good adhesiveness and stability.

    Method for manufacturing semiconductor device
    55.
    发明申请
    Method for manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号:US20060040435A1

    公开(公告)日:2006-02-23

    申请号:US11195725

    申请日:2005-08-03

    IPC分类号: H01L21/84

    CPC分类号: H01L27/1285 H01L27/1292

    摘要: It is an object of the present invention to provide a method for manufacturing a substrate having film patterns such as an insulating film, a semiconductor film, and a conductive film in simple processes. It is another object of the invention to provide a method for manufacturing a semiconductor device with high throughput and high yield at low cost. A method for manufacturing a semiconductor device including the steps of: forming a first film over a substrate; discharging a solution containing a mask material to the first film thereby forming a mask over the first film; patterning the first film with the use of the mask thereby forming low wettability regions and a high wettability region over the substrate; removing the mask; and discharging a solution containing a material of an insulating film, a semiconductor film, or a conductive film to the high wettability region provided between the low wettability regions thereby forming a pattern of the insulating film, the semiconductor film, or the conductive film.

    摘要翻译: 本发明的目的是提供一种在简单的工艺中制造具有绝缘膜,半导体膜和导电膜等膜图案的基板的方法。 本发明的另一个目的是提供一种以低成本生产高产量和高产率的半导体器件的方法。 一种制造半导体器件的方法,包括以下步骤:在衬底上形成第一膜; 将含有掩模材料的溶液排放到第一膜上,从而在第一膜上形成掩模; 通过使用掩模图案化第一膜,从而在衬底上形成低润湿性区域和高润湿性区域; 去除面膜; 并且将包含绝缘膜,半导体膜或导电膜的材料的溶液排出到设置在低润湿性区域之间的高润湿性区域,从而形成绝缘膜,半导体膜或导电膜的图案。