公开(公告)号：US08802540B2

公开(公告)日：2014-08-12

申请号：US11955765

申请日：2007-12-13

申请人： Nobuyuki Morimoto ,  Akihiko Endo

发明人： Nobuyuki Morimoto ,  Akihiko Endo

IPC分类号： H01L21/30

CPC分类号： H01L21/02052 ,  H01L21/2007 ,  H01L21/76256

摘要： The present invention provides a method of manufacturing a bonded wafer. The method includes ozone washing two silicon wafers to form an oxide film equal to or less than 2.2 nm in thickness on each surface of the two silicon wafers, and bonding the two silicon wafers through the oxide films formed to obtain a bonded wafer.

摘要翻译： 本发明提供一种制造接合晶片的方法。 该方法包括臭氧洗涤两个硅晶片以在两个硅晶片的每个表面上形成厚度等于或小于2.2nm的氧化物膜，并且通过形成的氧化膜将两个硅晶片接合以获得接合晶片。

公开(公告)号：US08048769B2

公开(公告)日：2011-11-01

申请号：US12064605

申请日：2007-07-04

申请人： Nobuyuki Morimoto ,  Akihiko Endo ,  Etsurou Morita

发明人： Nobuyuki Morimoto ,  Akihiko Endo ,  Etsurou Morita

IPC分类号： H01L21/762

CPC分类号： H01L21/76251 ,  H01L21/2007 ,  H01L21/26506 ,  H01L21/30604 ,  H01L21/30625

摘要： There is provided a bonded wafer having excellent thickness uniformity after thinning but also good surface roughness and being less in defects.In the production method of a bonded wafer by bonding a wafer for active layer to a wafer for support substrate and thinning the wafer for active layer, oxygen ions are implanted into the wafer for active layer to form an oxygen ion implanted layer in the active layer and thereafter a heat treatment is carried out in a non-oxidizing atmosphere at a temperature of not lower than 1100° C., and an oxide film formed on the exposed surface of the oxygen ion implanted layer is removed and then a heat treatment is carried out in a non-oxidizing atmosphere at a temperature of not higher than 1100° C.

摘要翻译： 提供了在变薄后具有优异的厚度均匀性但具有良好的表面粗糙度并且缺陷较少的接合晶片。 在通过将有源层用晶片与用于支撑基板的晶片接合并使用于有源层的晶片变薄的接合晶片的制造方法中，将氧离子注入到有源层用晶片中，在活性层中形成氧离子注入层 然后在非氧化性气氛中在不低于1100℃的温度下进行热处理，除去形成在氧离子注入层的暴露表面上的氧化膜，然后进行热处理 在不高于1100℃的温度下在非氧化性气氛中。

公开(公告)号：US08048767B2

公开(公告)日：2011-11-01

申请号：US11849058

申请日：2007-08-31

申请人： Nobuyuki Morimoto ,  Akihiko Endo

发明人： Nobuyuki Morimoto ,  Akihiko Endo

IPC分类号： H01L21/30

CPC分类号： H01L21/187

摘要： A bonded wafer is produced by directly bonding a silicon wafer for active layer and a silicon wafer for support substrate without an insulating film and thinning the silicon wafer for active layer to a given thickness, in which a silicon wafer cut out from an ingot at a cutting angle of 0-0.1° (compound angle) with respect to a predetermined crystal face is used in each of the silicon wafer for active layer and silicon wafer for support substrate.

摘要翻译： 通过直接接合用于有源层的硅晶片和用于支撑衬底的硅晶片而不具有绝缘膜并且将活性层的硅晶片减薄到给定的厚度来制造键合晶片，其中在晶片上切割出硅晶片 在用于有源层的硅晶片和用于支撑衬底的硅晶片中的每一个中使用相对于预定晶面的0-0.1°（复合角度）的切割角度。

公开(公告)号：US07713838B2

公开(公告)日：2010-05-11

申请号：US10570669

申请日：2004-09-08

申请人： Akihiko Endo ,  Nobuyuki Morimoto

发明人： Akihiko Endo ,  Nobuyuki Morimoto

IPC分类号： H01L21/30

CPC分类号： H01L21/322 ,  H01L21/3225 ,  H01L21/76254

摘要： Since a supporting wafer contains boron of 9×1018 atoms/cm3 or more, therefore a part of the metal impurities in an active layer wafer and the metal impurities in the wafer can be captured by the boron during the heat treatment for bonding. As a result, metal contamination in the active layer can be reduced. Moreover, the wafer strength is enhanced, thus preventing the wafer slipping. Since the wafer has no COP, micro voids are not detected in the LPD evaluation of the active layer, thereby improving the reliability of the evaluation. Such a bonded wafer can be manufactured at a low cast.

摘要翻译： 由于支撑晶片含有9×1018原子/ cm3以上的硼，因此在用于接合的热处理期间，有源层晶片中的一部​​分金属杂质和晶片中的金属杂质可被硼捕获。 结果，可以减少有源层中的金属污染。 此外，晶片强度提高，从而防止晶片滑动。 由于晶片没有COP，因此在有源层的LPD评价中未检测到微小空隙，从而提高了评价的可靠性。 这种接合晶片可以以低铸造制造。

公开(公告)号：US07544583B2

公开(公告)日：2009-06-09

申请号：US10570668

申请日：2004-09-08

申请人： Akihiko Endo ,  Nobuyuki Morimoto

发明人： Akihiko Endo ,  Nobuyuki Morimoto

IPC分类号： H01L21/30

CPC分类号： H01L21/3226

摘要： Since a supporting wafer contains nitrogen of 1×1014 atmos/cm3 and interstitial oxygen atom concentration, Oi, (old ASTM) of 13×1017 atoms/cm3, therefore a part of the metal impurities in an active layer wafer and the metal impurities in a bonded wafer can be captured by the BMD and the OSF in the wafer during the heat treatment after the bonding. Consequently, the contamination from the metal impurities in the active layer can be reduced.

摘要翻译： 由于支撑晶片含有1×10 14 atmos / cm 3的氮和间隙氧原子浓度Oi（旧ASTM）为13×10 17原子/ cm 3，因此活性层晶片中的一部​​分金属杂质和接合晶片中的金属杂质可以 在接合之后的热处理期间由晶圆上的BMD和OSF捕获。 因此，能够降低活性层中的金属杂质的污染。

公开(公告)号：US20080057676A1

公开(公告)日：2008-03-06

申请号：US11849058

申请日：2007-08-31

申请人： Nobuyuki Morimoto ,  Akihiko Endo

发明人： Nobuyuki Morimoto ,  Akihiko Endo

IPC分类号： H01L21/30

CPC分类号： H01L21/187

摘要： A bonded wafer is produced by directly bonding a silicon wafer for active layer and a silicon wafer for support substrate without an insulating film and thinning the silicon wafer for active layer to a given thickness, in which a silicon wafer cut out from an ingot at a cutting angle of 0-0.1° (compound angle) with respect to a predetermined crystal face is used in each of the silicon wafer for active layer and silicon wafer for support substrate.

摘要翻译： 通过直接接合用于有源层的硅晶片和用于支撑衬底的硅晶片而不具有绝缘膜并且将活性层的硅晶片减薄到给定的厚度来制造键合晶片，其中在晶片上切割出硅晶片 在用于有源层的硅晶片和用于支撑衬底的硅晶片中的每一个中使用相对于预定晶面的0-0.1°（复合角度）的切割角度。

公开(公告)号：US20070026637A1

公开(公告)日：2007-02-01

申请号：US10570668

申请日：2004-09-08

申请人： Akihiko Endo ,  Nobuyuki Morimoto

发明人： Akihiko Endo ,  Nobuyuki Morimoto

IPC分类号： H01L21/46 ,  H01L21/30

CPC分类号： H01L21/3226

摘要： Since a supporting wafer contains nitrogen of 1×1014 atmos/cm3 and interstitial oxygen atom concentration, Oi, (old ASTM) of 13×1017 atoms/cm3, therefore a part of the metal impurities in an active layer wafer and the metal impurities in a bonded wafer can be captured by the BMD and the OSF in the wafer during the heat treatment after the bonding. Consequently, the contamination from the metal impurities in the active layer can be reduced.

摘要翻译： 由于支撑晶片含有1×10 14大气压/厘米3的氮和间隙氧原子浓度，具有13×10 17原子的Oi（旧ASTM） / cm 3，因此在接合之后的热处理期间，活性层晶片中的一部​​分金属杂质和接合晶片中的金属杂质可以通过晶片中的BMD和OSF捕获 。 因此，能够降低活性层中的金属杂质的污染。

公开(公告)号：US4841545A

公开(公告)日：1989-06-20

申请号：US76185

申请日：1987-07-21

申请人： Akihiko Endo ,  Shigeki Takeda ,  Hiroshi Takeda

发明人： Akihiko Endo ,  Shigeki Takeda ,  Hiroshi Takeda

IPC分类号： G01S19/37 ,  H03L7/087 ,  H04B1/707 ,  H04B1/7085 ,  H04J13/00

CPC分类号： H04B1/7085 ,  H03L7/087 ,  H04B1/7095

摘要： A synchronous tracking device for a receiver in a direct-spread spectrum communication system in which a carrier frequency and a pseudo noise code for spreading it are coherent. A first circuit tracks the pseudo noise code in the received signal for a predetermined time after synchronous acquisition of the pseudo noise code. A second circuit tracks the pseudo noise code after the first tracking circuit stops tracking, while maintaining a locking condition achieved by the first tracking circuit.

摘要翻译： 一种用于直扩扩频通信系统中的接收机的同步跟踪装置，其中载频和用于扩展它的伪噪声码是相干的。 在伪噪声码的同步获取之后，第一电路在接收信号中跟踪预定时间的伪噪声码。 在第一跟踪电路停止跟踪之后，第二电路跟踪伪噪声码，同时保持由第一跟踪电路实现的锁定状态。

公开(公告)号：US07867877B2

公开(公告)日：2011-01-11

申请号：US10587725

申请日：2005-01-28

申请人： Etsuro Morita ,  Akihiko Endo

发明人： Etsuro Morita ,  Akihiko Endo

IPC分类号： H01L21/30

CPC分类号： H01L21/76256 ,  H01L21/26533 ,  Y10S438/974

摘要： A method for manufacturing SOI wafers is provided which allows the obtaining of a thin SOI layer having uniform in-plane thickness. In this manufacturing method, an oxygen ion implanted layer is first formed on an active layer wafer. This is then laminated to a base wafer with a embedded oxide film interposed therebetween. The active layer wafer side of the laminated wafer is then ground to remove a portion thereof. The remaining surface side of the active layer wafer is removed by polishing or KOH etching to expose the oxygen ion implanted layer. Oxygen ions are implanted to a uniform depth within the plane of the oxygen ion implanted layer in this oxygen ion implanted layer. Subsequently, oxidizing treatment is carried out to form an oxide film on the exposed surface of the oxygen ion implanted layer. Moreover, this oxide film is removed together with the oxygen ion implanted layer by an HF solution. The remaining portion of the active layer wafer serves as a thin SOI layer.

摘要翻译： 提供一种用于制造SOI晶片的方法，其允许获得具有均匀的面内厚度的薄SOI层。 在该制造方法中，首先在有源层晶片上形成氧离子注入层。 然后将其层压到其间插入有氧化膜的基底晶片。 然后将层压晶片的有源层晶片侧研磨以除去其一部分。 通过抛光或KOH蚀刻去除有源层晶片的剩余表面侧以暴露氧离子注入层。 在该氧离子注入层中，将氧离子注入到氧离子注入层的平面内的均匀深度。 随后，进行氧化处理以在氧离子注入层的暴露表面上形成氧化膜。 此外，通过HF溶液与氧离子注入层一起除去该氧化膜。 有源层晶片的剩余部分用作薄的SOI层。

公开(公告)号：US20060177991A1

公开(公告)日：2006-08-10

申请号：US11346256

申请日：2006-02-03

申请人： Satoshi Murakami ,  Toshiaki Ono ,  Akihiko Endo

发明人： Satoshi Murakami ,  Toshiaki Ono ,  Akihiko Endo

IPC分类号： H01L21/46

CPC分类号： H01L21/76254

摘要： By using, in the so-called Smart Cut process comprising the steps of bonding an ion-implanted active layer wafer to a base wafer and later splitting off the base wafer to produce a SOI wafer, a wafer doped with C in a single crystal ingot growing process (desirably to a carbon concentration of not lower than 1×1016 atoms/cm3) as the active layer wafer, it becomes possible to exhibit the effect of inhibiting agglomeration of interstitial Si atoms and prevent development of stacking faults even when the SOI wafer is subjected to thermal oxidation treatment. Furthermore, the technique of sacrificial oxidation can be applied to production of SOI wafers and, thus, a damaged layer formed on the SOI layer surface can be removed and surface roughness can be improved without impairing crystalline integrity and, further, SOI layer thickness can be efficiently reduced.

摘要翻译： 通过在所谓的智能切割工艺中使用包括将离子注入的活性层晶片粘合到基底晶片并随后将基底晶片分离以产生SOI晶片的步骤，在单晶锭中掺杂有C的晶片 作为活性层晶片的生长过程（优选为不低于1×10 16原子/ cm 3的碳浓度）可以显示抑制聚集的作用 间隙Si原子，并且即使当SOI晶片经受热氧化处理时也防止堆垛层错的发展。 此外，牺牲氧化的技术可以应用于SOI晶片的生产，因此可以去除在SOI层表面上形成的损伤层，并且可以在不损害晶体完整性的情况下改善表面粗糙度，并且还可以将SOI层厚度 有效减少