公开(公告)号：US07867877B2

公开(公告)日：2011-01-11

申请号：US10587725

申请日：2005-01-28

申请人： Etsuro Morita ,  Akihiko Endo

发明人： Etsuro Morita ,  Akihiko Endo

IPC分类号： H01L21/30

CPC分类号： H01L21/76256 ,  H01L21/26533 ,  Y10S438/974

摘要： A method for manufacturing SOI wafers is provided which allows the obtaining of a thin SOI layer having uniform in-plane thickness. In this manufacturing method, an oxygen ion implanted layer is first formed on an active layer wafer. This is then laminated to a base wafer with a embedded oxide film interposed therebetween. The active layer wafer side of the laminated wafer is then ground to remove a portion thereof. The remaining surface side of the active layer wafer is removed by polishing or KOH etching to expose the oxygen ion implanted layer. Oxygen ions are implanted to a uniform depth within the plane of the oxygen ion implanted layer in this oxygen ion implanted layer. Subsequently, oxidizing treatment is carried out to form an oxide film on the exposed surface of the oxygen ion implanted layer. Moreover, this oxide film is removed together with the oxygen ion implanted layer by an HF solution. The remaining portion of the active layer wafer serves as a thin SOI layer.

摘要翻译： 提供一种用于制造SOI晶片的方法，其允许获得具有均匀的面内厚度的薄SOI层。 在该制造方法中，首先在有源层晶片上形成氧离子注入层。 然后将其层压到其间插入有氧化膜的基底晶片。 然后将层压晶片的有源层晶片侧研磨以除去其一部分。 通过抛光或KOH蚀刻去除有源层晶片的剩余表面侧以暴露氧离子注入层。 在该氧离子注入层中，将氧离子注入到氧离子注入层的平面内的均匀深度。 随后，进行氧化处理以在氧离子注入层的暴露表面上形成氧化膜。 此外，通过HF溶液与氧离子注入层一起除去该氧化膜。 有源层晶片的剩余部分用作薄的SOI层。

公开(公告)号：US08283252B2

公开(公告)日：2012-10-09

申请号：US12585400

申请日：2009-09-14

申请人： Toru Taniguchi ,  Etsuro Morita ,  Satoshi Matagawa ,  Seiji Harada ,  Isoroku Ono ,  Mitsuhiro Endo ,  Fumihiko Yoshida

发明人： Toru Taniguchi ,  Etsuro Morita ,  Satoshi Matagawa ,  Seiji Harada ,  Isoroku Ono ,  Mitsuhiro Endo ,  Fumihiko Yoshida

IPC分类号： H01L21/302

CPC分类号： B24B37/08 ,  B24B37/042 ,  B24B37/24 ,  B24B37/28

摘要： A method of manufacturing a semiconductor wafer, including a step of differentiating the glossiness of a front surface from that of a rear surface of the wafer by holding the semiconductor wafer in a wafer holding hole formed in a carrier plate, and simultaneously polishing a front and back surface of said semiconductor wafer by driving said carrier plate to make a circular motion associated with no rotation on its own axis within a plane parallel with a surface of said carrier plate between a pair of polishing members disposed to face to each other, by using an abrasive body with a semiconductor wafer sink rate different in polishing from that of an abrasive body for one of a polishing member on an upper surface plate and a polishing member on a lower surface plate so as to simultaneously polish both the front and rear surfaces of the semiconductor wafer, or differentiating by differentiating the rotating speed of the upper surface plate from that of the lower surface plate.

摘要翻译： 一种制造半导体晶片的方法，包括通过将半导体晶片保持在形成在载板上的晶片保持孔中，将前表面的光泽度与晶片的后表面的光泽度区分开的步骤， 所述半导体晶片的后表面通过驱动所述承载板而形成圆周运动，所述圆周运动与平行于所述承载板的表面的平面之间在其自身轴线上不旋转，所述平面布置在彼此面对的一对抛光构件之间，通过使用 具有与用于上表面板上的抛光构件和下表面板上的抛光构件之一的研磨体的抛光不同的半导体晶片沉降速率的研磨体，以同时抛光前表面和后表面 半导体晶片，或者通过区分上表面板的转速与下表面板的转速来区分。

公开(公告)号：US20100009605A1

公开(公告)日：2010-01-14

申请号：US12585400

申请日：2009-09-14

申请人： Toru Taniguchi ,  Etsuro Morita ,  Satoshi Matagawa ,  Seiji Harada ,  Isoroku Ono ,  Mitsuhiro Endo ,  Fumihiko Yoshida

发明人： Toru Taniguchi ,  Etsuro Morita ,  Satoshi Matagawa ,  Seiji Harada ,  Isoroku Ono ,  Mitsuhiro Endo ,  Fumihiko Yoshida

IPC分类号： H01L21/463

CPC分类号： B24B37/08 ,  B24B37/042 ,  B24B37/24 ,  B24B37/28

摘要： A method of manufacturing a semiconductor wafer, including a step of differentiating the glossiness of a front surface from that of a rear surface of the wafer by holding the semiconductor wafer in a wafer holding hole formed in a carrier plate, and simultaneously polishing a front and back surface of said semiconductor wafer by driving said carrier plate to make a circular motion associated with no rotation on its own axis within a plane parallel with a surface of said carrier plate between a pair of polishing members disposed to face to each other, by using an abrasive body with a semiconductor wafer sink rate different in polishing from that of an abrasive body for one of a polishing member on an upper surface plate and a polishing member on a lower surface plate so as to simultaneously polish both the front and rear surfaces of the semiconductor wafer, or differentiating by differentiating the rotating speed of the upper surface plate from that of the lower surface plate.

摘要翻译： 一种制造半导体晶片的方法，包括通过将半导体晶片保持在形成在载板上的晶片保持孔中，将前表面的光泽度与晶片的后表面的光泽度区分开的步骤， 所述半导体晶片的后表面通过驱动所述承载板而形成圆周运动，所述圆周运动与平行于所述承载板的表面的平面之间在其自身轴线上不旋转，所述平面布置在彼此面对的一对抛光构件之间，通过使用 具有与用于上表面板上的抛光构件和下表面板上的抛光构件之一的研磨体的抛光不同的半导体晶片沉降速率的研磨体，以同时抛光前表面和后表面 半导体晶片，或者通过区分上表面板的转速与下表面板的转速来区分。

公开(公告)号：US20070161199A1

公开(公告)日：2007-07-12

申请号：US10587725

申请日：2005-01-28

申请人： Etsuro Morita

发明人： Etsuro Morita

IPC分类号： H01L21/8222 ,  H01L21/84

CPC分类号： H01L21/76256 ,  H01L21/26533 ,  Y10S438/974

摘要： A method for manufacturing SOI wafers is provided which allows the obtaining of a thin SOI layer having uniform in-plane thickness. In this manufacturing method, an oxygen ion implanted layer is first formed on an active layer wafer. This is then laminated to a base wafer with a embedded oxide film interposed therebetween. The active layer wafer side of the laminated wafer is then ground to remove a portion thereof. The remaining surface side of the active layer wafer is removed by polishing or KOH etching to expose the oxygen ion implanted layer. Oxygen ions are implanted to a uniform depth within the plane of the oxygen ion implanted layer in this oxygen ion implanted layer. Subsequently, oxidizing treatment is carried out to form an oxide film on the exposed surface of the oxygen ion implanted layer. Moreover, this oxide film is removed together with the oxygen ion implanted layer by an HF solution. The remaining portion of the active layer wafer serves as a thin SOI layer.

摘要翻译： 提供一种用于制造SOI晶片的方法，其允许获得具有均匀的面内厚度的薄SOI层。 在该制造方法中，首先在有源层晶片上形成氧离子注入层。 然后将其层压到其间插入有氧化膜的基底晶片。 然后将层压晶片的有源层晶片侧研磨以除去其一部分。 通过抛光或KOH蚀刻去除有源层晶片的剩余表面侧以暴露氧离子注入层。 在该氧离子注入层中，将氧离子注入到氧离子注入层的平面内的均匀深度。 随后，进行氧化处理以在氧离子注入层的暴露表面上形成氧化膜。 此外，通过HF溶液与氧离子注入层一起除去该氧化膜。 有源层晶片的剩余部分用作薄的SOI层。

公开(公告)号：US06663708B1

公开(公告)日：2003-12-16

申请号：US09667885

申请日：2000-09-22

申请人： Etsuro Morita ,  Takaaki Shiota ,  Yoshihisa Nonogaki ,  Yoshinobu Nakada ,  Hisashi Furuya ,  Hiroshi Koya ,  Jun Furukawa ,  Hideo Tanaka ,  Yuji Nakata

发明人： Etsuro Morita ,  Takaaki Shiota ,  Yoshihisa Nonogaki ,  Yoshinobu Nakada ,  Hisashi Furuya ,  Hiroshi Koya ,  Jun Furukawa ,  Hideo Tanaka ,  Yuji Nakata

IPC分类号： C30B3302

CPC分类号： C30B33/00 ,  C30B29/06 ,  H01L21/3225

摘要： An ingot is manufactured by pulling it up such that V/Ga and V/Gb become 0.23 to 0.50 mm2/minute ° C., respectively, where V (mm/minute) is a pulling-up speed, and Ga (° C./mm) is and axial temperature gradient at the center of the ingot and Gb (° C./mm) is an axial temperature gradient at the edge of the ingot at temperatures in a range of 1,300° C. to a melting pointy of silicon. A wafer obtained by slicing the ingot is heat treated in a reductive atmosphere at temperature in a renge of 1,050° C. to 1,220° C. for 30 to 150 minutes. A silicon wafer free of OSF's, free of COP's, and substantially free of contamination such as Fe and of occurence of slip, is obtained.

摘要翻译： 通过将其拉起来使得V / Ga和V / Gb分别变为0.23至0.50mm 2 /分钟℃来制造锭，其中V（mm /分钟）是拉升速度，Ga（ °C / mm）是在晶锭中心的轴向温度梯度，Gb（℃/ mm）是在锭的边缘处的温度在1300℃的温度下的轴向温度梯度到熔化 硅尖锐 通过将锭切片获得的晶片在1050℃至1220℃的温度下在还原气氛中热处理30至150分钟。 没有OSF的硅晶片没有COP，并且基本上没有诸如Fe的污染和滑动的发生。

公开(公告)号：US07589023B2

公开(公告)日：2009-09-15

申请号：US10258282

申请日：2001-04-23

申请人： Toru Taniguchi ,  Etsuro Morita ,  Satoshi Matagawa ,  Seiji Harada ,  Isoroku Ono ,  Mitsuhiro Endo ,  Fumihiko Yoshida

发明人： Toru Taniguchi ,  Etsuro Morita ,  Satoshi Matagawa ,  Seiji Harada ,  Isoroku Ono ,  Mitsuhiro Endo ,  Fumihiko Yoshida

IPC分类号： H01L21/302

CPC分类号： B24B37/08 ,  B24B37/042 ,  B24B37/24 ,  B24B37/28

摘要： A method of manufacturing a semiconductor wafer, comprising the step of differentiating the glossiness of a front surface from that of a rear surface of the wafer by using an abrasive cloth with a semiconductor wafer sink rate different in polishing from that of the other abrasive cloth for one of a polishing cloth (14) on an upper surface plate (12) and a polishing cloth (15) on a lower surface plate (13) so as to simultaneously polish both the front and rear surfaces of the semiconductor wafer (W), or differentiating by differentiating the rotating speed of the upper surface plate from that of the lower surface plate.

摘要翻译： 一种半导体晶片的制造方法，其特征在于，通过使用具有与其它研磨布不同的半导体晶片沉降速率的研磨布，将前表面的光泽度与晶片的后表面的光泽度区分开的步骤， 在上表面板（12）上的抛光布（14）和下表面板（13）上的抛光布（15）之一，以同时抛光半导体晶片（W）的前表面和后表面， 或通过区分上表面板的转速与下表面板的转速来区分。