摘要:
Memory systems are disclosed that include a memory controller and an outbound link with the memory controller connected to the outbound link. The outbound link typically includes a number of conductive pathways that conduct memory signals from the memory controller to memory buffer devices in a first memory layer; and at least two memory buffer devices in a first memory layer. Each memory buffer device in the first memory layer typically is connected to the outbound link to receive memory signals from the memory controller.
摘要:
A cascaded interconnect system for providing a service interface to a memory system. The cascaded interconnect system includes a master service interface module, a service interface bus, and one or more slave service interface modules. The master service interface module and the slave interface modules are cascade interconnected via the service interface bus. Each slave service interface module is in communication with a corresponding memory module for providing a service to the memory module.
摘要:
Systems and methods for providing dynamic memory pre-fetch. Embodiments include a hub device including an input command stream interface and an adaptive pre-fetch logical unit (APLU). The input command stream interface detects commands from a memory controller directed to one or more memory devices that are connected to the hub device. The APLU independently analyzes the commands to determine access patterns to the memory devices. The APLU also dynamically selects between enabling a pre-fetch function and disabling the pre-fetch function for the memory devices based on the results of the analysis.
摘要:
A system for implementing a memory subsystem command interface, the system including a cascaded interconnect system including one or more memory modules, a memory controller and a memory bus. The memory controller generates a data frame that includes a plurality of commands. The memory controller and the memory module are interconnected by a packetized multi-transfer interface via the memory bus and the frame is transmitted to the memory modules via the memory bus.
摘要:
Memory systems are disclosed that include a memory controller; a memory bus terminator; a high speed memory bus that interconnects the memory controller, the memory bus terminator, and at least one memory module, where memory module includes a memory hub device, high speed random access memory served by the memory hub device, two bus signal ports, and a segment of the high speed memory bus fabricated on the memory module so as to interconnect the bus signal ports and the memory hub device, with the high speed memory bus connected to the memory hub device by a negligible electrical stub.
摘要:
A system for implementing a memory subsystem command interface, the system including a cascaded interconnect system including one or more memory modules, a memory controller and a memory bus. The memory controller generates a data frame that includes a plurality of commands. The memory controller and the memory module are interconnected by a packetized multi-transfer interface via the memory bus and the frame is transmitted to the memory modules via the memory bus.
摘要:
A Planar Memory Module (PAMM) device comprising a generally planar card comprising a first side and a second side, the first side having a plurality of couplings and the second side having a plurality of connectors, a plurality of memory devices coupled to the card via a first portion of the plurality of couplings, and at least one hub chip coupled to the card via a second portion of the plurality of couplings. Each of the plurality of couplings is connected to an associated one of the plurality of connectors.
摘要:
A memory built-in self test (MBIST) apparatus and method for testing dynamic random access memory (DRAM) arrays, the DRAM arrays in communication with a memory interface device that includes interface logic and mainline chip logic. The MBIST apparatus includes a finite state machine including a command generator and logic for incrementing data and addresses under test and a command scheduler in communication with the finite state machine. The command scheduler includes resource allocation logic for spacing commands to memory dynamically utilizing DRAM timing parameters. The MBIST apparatus also includes a test memory storing subtests of an MBIST test. Each of the subtests provides a full pass through a configured address range. The MBIST apparatus further includes a subtest pointer in communication with the test memory and the finite state machine. The finite state machine implements subtest sequencing of each of the subtests via the subtest pointer.
摘要:
A memory subsystem package has a memory controller interface ASIC (application specific integrated circuit) and a plurality of Memory modules. The ASIC has a bi-directional serial protocol i2C communication bus to off chip drivers for monitoring temperature and for adjusting the environment surrounding the package by controlling fans using fan switches and variable voltage controls. In addition there is provided an Alternating Current Built in Self Test (AC BIST) with variable data receiver voltage reference for performing high-speed AC memory subsystem self-test for that ASIC enabling writing of pseudo-random patterns to memory, reading them back and comparing the expected results at hardware speeds. Vref can be made to vary across its allowable range during AC self test to provide improved coverage. The system monitors Vddq during normal system operation using an ADC. The system varies Vref as a function of Vddq, using a combination of a DAC and ADC. The system varies Vref as a function of Vddq, such that Vref=1/m*Vddq+OFFSET, where m can be 1, 2, 4, or 8, and where OFFSET can be positive or negative ranging from 1/n * Vddq to n−1/n*Vddq, where n is the voltage granularity of the DAC.
摘要翻译:存储器子系统包具有存储器控制器接口ASIC(专用集成电路)和多个存储器模块。 ASIC具有双向串行协议i2C通信总线到芯片外驱动器,用于监控温度,并通过使用风扇开关和可变电压控制控制风扇来调节封装周围的环境。 此外,还提供了具有可变数据接收器电压参考的内置自测(AC BIST)的交流电,用于为该ASIC执行高速AC存储器子系统自检,使得能够将伪随机模式写入存储器,读取它们, 在硬件速度下比较预期结果。 在AC自检期间,可以使Vref在其允许范围内变化,以提供更好的覆盖。 系统使用ADC在系统正常运行期间监视Vddq。 该系统使用DAC和ADC的组合,将Vdd变为Vddq的函数。 该系统将Vref作为Vddq的函数,使得Vref = 1 / m * Vddq + OFFSET,其中m可以是1,2,4或8,并且其中OFFSET可以是正或负范围从1 / n * Vddq 到n-1 / n * Vddq,其中n是DAC的电压粒度。
摘要:
A computer memory, having one or more of a semiconductor memory device having an internal memory array comprising a plurality of semiconductor dynamic random access memory (DRAM) cells arranged in a matrix of rows and columns, and provided as a memory module rank of such memory devices arranged in an array on a DIMM of one or more of said semiconductor memory device on a substrate which can be coupled via a memory device data interface to a memory system as a memory subsystem, each of said memory device having a low power shut-down state that can be activated using a common memory data interface. Control of power to a DRAM issues over the data interface two commands to a DRAM power control command decode, a power-state program signal and a power-state reset signal as a power-state control commands to control the power state of said DRAM, and to activate for READ/WRITE a memory cell as a normal active or spare device.