摘要:
The present invention provides a Fe—B—Si system amorphous alloy thin strip excellent in high magnetic flux density, thermal stability, amorphous formability improved workability and low core loss. The present invention further provides a Fe—B—Si system amorphous alloy thin strip which has the reduced cost without using high purity iron resources such as an electrolytic iron as iron resources used in an amorphous alloy thin strip, and also has core loss less than 0.10 W/kg at W13/50 in soft magnetic property in alternating-current field. The Fe—B—Si system amorphous alloy thin strip according to the present invention contains an appropriate amounts of N, C, P to improve thermal stability, amorphous formability, workability (brittleness), and core loss without deteriolating magnetic flux density, and contains, in atomic %, B: 5-25%, Si: 1-30%, N: 0.001-0.2%, C: 0.003-10%, P: 0.001-0.2% and the balance being Fe and unavoidable impurities, and optionally contains Co or Ni substituted to less than 15% of the Fe amount, or Cr at less than 5% substituted to the Fe amount. Further, Mn: 0.15-0.5 mass %, S: 0.004-0.05 mass % can be included.
摘要:
The present invention provides a low iron-loss Fe-based amorphous alloy thin strip having an ultrathin oxide layer with a controlled thickness and/or a segregated layer containing either or both P and S at the lower section of an ultrathin oxide layer, as well as an Fe-based amorphous alloy thin strip fabricated with an ultrathin oxide layer with a controlled structure on the thin strip surface, wherein the ultrathin oxide layer is formed with a two-layer structure on the thin strip surface to reduce iron loss. Specifically, there is provided an Fe-based amorphous alloy thin strip characterized by being a quenched metal thin strip obtained by ejecting a molten metal onto a moving substrate through a casting nozzle with a slot-shaped opening and quenching it to solidity, and by having ultrathin oxide layer with a thickness of from 5 nm to 20 nm on at least one surface of the thin strip. There is further provided an Fe-based amorphous alloy thin strip characterized by being a quenched metal thin strip obtained by ejecting a molten metal onto a moving substrate through a casting nozzle with a slot-shaped opening and quenching it to solidity, by having an ultrathin oxide layer on at least one surface of the thin strip, and by having a segregated layer containing either or both P and S at the lower section of the oxide layer.
摘要:
An arrangement of the magnetic detection and excitation head has an excitation head with a U-shaped excitation core of soft magnetic material forming two legs, each having an end plane facing a surface of a measured object, and an excitation coil wound on the core excitable by a low frequency current; and a detection head with a rod-shaped detection core of non-magnetic or soft magnetic material and a detection coil wound thereon. An end plane of the detection core which is to be close to the surface of the object, and the end planes of the two legs of the excitation core are arranged such that the end plane of the detection core is between the end planes of the two legs and all the end planes are substantially on a common flat plane. Also, a position of the detection head relative to the excitation head is selected such that when an AC current of a predetermined frequency is supplied to the excitation coil, a selected one of a total induced voltage signal, which includes a voltage signal having substantially the same frequency as that of the supplied AC current and a Barkhausen signal induced into the detection coil, and the Barkhausen signal alone is detected.
摘要:
A multiplex transmission system includes a plurality of multiplex nodes interconnected by a common multiplex transmission line. Data frames are transmitted among the multiplex nodes through the multiplex transmission line. A data frame transmitted from a sending multiplex node includes a data area which is divided into subdivided areas in accordance with data transmitted therefrom and data transmitted from receiving multiplex nodes which send data in response to a send request, in accordance with the number of data pieces or the number of bits, and the receiving nodes send data to respective subdivided areas in a predetermined order, to thereby carry out a data transmission. Accordingly, the sending multiplex node can simultaneously collect data from the receiving multiplex nodes which are functionally subordinate. When any of the receiving multiplex nodes fails to return an ACK signal, the sending multiplex node retransmits the data frame.
摘要:
When a message is transmitted, frame by frame, from any one (10) of a plurality of multiplex nodes to a common multiplex bus (MB) to which the multiplex nodes are connected, each of the multiplex nodes (20 and 30) determines that transmission of a frame therefrom is allowed when it detects a transmission permission signal (b, b') added to the frame after detection of and idle state of the multiplex bus, and starts transmitting a message data frame. This makes it possible to properly implement priority-based control according to the priority levels of the data frames irrespectively of variations in the reference clocks of the multiplex nodes. Further, receiving multiplex nodes perform frame synchronization at the rise of a special code (a) of a start code (SOM) of a message data frame, and then perform re-synchronization at the rise of a special bit pattern (b") which includes a passive bit and a dominant bit. This prevents synchronization from being deviated and bit errors resulting from deviated synchronization, thus leading to higher reliability of multiplex transmission.
摘要:
The data storing system according to the present invention is used for a communication control circuit. The communication control circuit is equipped with a communication sequencer, which takes in a message to be transmitted to a multiplex bus, an ID table which registers data IDs of messages necessary for the station, and the first and second memory circuits which have memory areas keyed to the data IDs. When the communication sequencer takes in a message, it determines whether its data ID exists in the ID table. If the data ID exists and the frequency of occurrence is high, then data following the data ID is temporarily stored in a memory area keyed to a data ID of the first memory circuit. If the data ID exists and the frequency of occurrence is low, then the data following the data ID is temporarily stored in a memory area of the second memory circuit. When a CPU reads the aforementioned stored data, it sets the status area of the storage area, in which the data was stored, for a state that enables a data storage change.
摘要:
A valve mechanism is provided in a hydraulic line which connects a master cylinder of a brake system and a brake provided for a driving wheel of a vehicle. When the slip of the driving wheel is larger than a predetermined value, the valve mechanism is selectively moved between a position where it directly applies brake fluid from the master cylinder to the brake and a position where it returns brake fluid discharged from the brake to an oil reservoir, thereby controlling the driving torque of the driving wheel to converge the slip of the driving wheels to a proper level. An oil pump is operated to return the brake fluid in the oil reservoir to the master cylinder when the valve mechanism is operated to effect the slip control. While the brake pedal is in the released state, the oil pump is kept operated during the slip control and for a predetermined time after interruption of the slip control so that the brake fluid in the oil reservoir is returned to the master cylinder substantially completely. When the brake pedal is depressed while the slip being effected, the slip control is ended and the oil pump is stopped. After the brake pedal is released, the oil pump is operated for a predetermined time.
摘要:
Rare-earth alloy anisotropic powders consist of, in atomic percent, over 12 percent and not more than 20 percent of R (R is at least one on neodymium and praseodymium or at least one of them and or more rare-earth elements), not less than 4 percent and not more than 10 percent of boron, not less than 0.05 percent and not more than 5 percent of copper and the rest that consists of iron and unavoidable impurities. Up to 20 percent of the iron contained is replaceable with cobalt. The alloy powders are made up of flat crystal grains having mean thickness h (the shortest measure), d not smaller than 0.01 .mu.m and not larger than 0.5 .mu.m and ratio d/h not smaller than 2, where d is the means measure of the grains taken at right angles to the widthwide direction thereof, and the alloy powders are magnetically anisotropic. Each rare-earth alloy anisotropic powder is prepared by melting an R-Fe-B-Cu alloy, putting thin ribbons prepared by quenching the melt or a powder prepared by grinding the thin ribbons in a metal container, hermetically sealing the metal container after replacing its inner atmosphere with a vacuum or an inert gas atmosphere, and rolling the thin ribbons or powder, together with the metal container, at a temperature not lower than 500.degree. C. and not higher than 900.degree. C. Rare-earth alloy anisotropic magnets are made by kneading and forming the rare-earth alloy anisotropic powders with not less than 10 percent and not more than 50 percent by volume of resin or by hot-compressing the rare-earth alloy anisotropic powders.
摘要:
This invention concerns a production method and a processing apparatus for semiconductor devices, as well as an evacuating apparatus used for the processing apparatus. According to this invention, since the evacuation system of pressure-reduction processing apparatus for conducting various wafer processings during production steps of semi-conductor devices is constituted only with oil-free vacuum pump, deleterious oil contaminations or carbonation products of oils produced from oils upon heating are not present in the pressure-reducing processing chamber as compared with conventional pressure-reducing processing apparatus using a vacuum oil pump as an evacuation pump and the production method of semiconductor devices using such apparatus. Accordingly, highly clean evacuated condition can be attained and, in addition, semiconductor devices at high reliability and with no degradation in the electric characteristics can be obtained by using the pressure-reducing processing apparatus having such a highly clean processing chamber.