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    Image reading device, recording medium storing image reading program, image reading method and data signal
    56.
    发明申请
    Image reading device, recording medium storing image reading program, image reading method and data signal 审中-公开
    图像读取装置，存储图像读取程序的记录介质，图像读取方法和数据信号

    公开(公告)号：US20090097079A1

    公开(公告)日：2009-04-16

    申请号：US12081816

    申请日：2008-04-22

    申请人： Hidetaka Hama ,  Kouji Yorimoto ,  Junichi Goto ,  Kenji Nomura ,  Kazuhiko Minowa

    发明人： Hidetaka Hama ,  Kouji Yorimoto ,  Junichi Goto ,  Kenji Nomura ,  Kazuhiko Minowa

    IPC分类号： H04N1/04

    CPC分类号： H04N1/00795 ,  H04N1/00816 ,  H04N1/1013 ,  H04N1/193 ,  H04N2201/0081

    摘要： An image reading device, which includes: an original document reading section that emits light to an original document and in the vicinity of the original document, receives reflected light and outputs image signals; an original document positioning guide that has at least a first color and a second color on a side receiving the light emitted from the original document reading section, and is used for settling a position of the original document; a detection section that monitors a first image signal in a scanning direction from the first color to the original document and a second image signal in a scanning direction from the second color to the original document, and detects a position for extracting image signals corresponding to the light reflected on the original document on the basis of a change occurring in either of the first image signal or the second image signal.

    摘要翻译： 一种图像读取装置，包括：原稿读取部，其对原稿发光，并在原稿附近，接收反射光并输出图像信号; 原稿定位引导件，其在接收从原始文档读取部分发射的光的一侧具有至少第一颜色和第二颜色，并且用于确定原始文档的位置; 检测部，其将从第一颜色到原稿的扫描方向的第一图像信号和从第二颜色向原稿的扫描方向上的第二图像信号进行监视，并且检测用于提取与第一颜色相对应的图像信号的位置 基于在第一图像信号或第二图像信号中的任一个发生的变化在原始文档上反射的光。

    Thin-film capacitor element and semiconductor device
    58.
    发明申请
    Thin-film capacitor element and semiconductor device 审中-公开
    薄膜电容器元件和半导体器件

    公开(公告)号：US20060214205A1

    公开(公告)日：2006-09-28

    申请号：US11349121

    申请日：2006-02-08

    申请人： John Baniecki ,  Kenji Nomura ,  Takeshi Shioga ,  Kazuaki Kurihara

    发明人： John Baniecki ,  Kenji Nomura ,  Takeshi Shioga ,  Kazuaki Kurihara

    IPC分类号： H01L29/94

    CPC分类号： H01G4/33 ,  H01G4/005 ,  H01G7/06 ,  H01L27/016 ,  H01L27/10852 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

    摘要： To provide a thin-film capacitor and a semiconductor device capable of preventing a reduction in the dielectric constant due to a residual tensile stress in a ferroelectric layer in a thin-film capacitor using the ferroelectric substance, and increasing the dielectric constant and increasing an electric capacity. In a thin-film capacitor 10 having a lower electrode 2, a ferroelectric layer 3, and an upper electrode 4 on a substrate 1, the thin-film capacitor 10 has the upper electrode 4 that adds a compressive stress to the ferroelectric layer 3, and a residual compressive stress in the upper electrode 4 is within a range from 108 to 6×1011 dyne/cm2.

    摘要翻译： 为了提供一种薄膜电容器和半导体器件，其能够防止由于在使用铁电体物质的薄膜电容器中的铁电层中的残余拉伸应力而导致的介电常数降低，并且增加介电常数并增加电 容量。 在基板1上具有下电极2，铁电体层3和上电极4的薄膜电容器10中，薄膜电容器10具有向铁电层3增加压应力的上电极4， 并且上部电极4中的残余压缩应力在10×8×6×10 6达因/ cm 2以下的范围内。