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409 条记录 (耗时 0.065 秒)

    Multi-core transformer plasma source
    52.
    发明授权
    Multi-core transformer plasma source 失效
    多核变压器等离子体源

    公开(公告)号：US06755150B2

    公开(公告)日：2004-06-29

    申请号：US09839360

    申请日：2001-04-20

    申请人： Canfeng Lai ,  Michael S. Cox ,  Peter K. Loewenhardt ,  Tsutomu Tanaka ,  Shamouil Shamouilian

    发明人： Canfeng Lai ,  Michael S. Cox ,  Peter K. Loewenhardt ,  Tsutomu Tanaka ,  Shamouil Shamouilian

    IPC分类号： C23C1600

    CPC分类号： H01J37/32431

    摘要： A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and generation efficiency. In another embodiment, cores are arranged in a lateral array into a plasma generating plate that can be scaled to accommodate substrates of various sizes, including very large substrates. The symmetry of the plasma attained allows simultaneous processing of two substrates, one on either side of the plasma generator.

    摘要翻译： 使用环形铁芯的变压器耦合等离子体源沿着环面的中心轴形成具有高密度离子的等离子体。 在一个实施例中，等离子体发生器的芯以垂直对准堆叠以增强等离子体的方向性和发电效率。 在另一个实施例中，芯以横向阵列布置成等离子体发生板，其可被缩放以适应各种尺寸的衬底，包括非常大的衬底。 所获得的等离子体的对称性允许同时处理两个基板，一个在等离子体发生器的两侧。

    Connector
    53.
    发明授权
    Connector 有权

    公开(公告)号：US06659798B2

    公开(公告)日：2003-12-09

    申请号：US10178307

    申请日：2002-06-21

    申请人： Tsuyoshi Mase ,  Tsutomu Tanaka

    发明人： Tsuyoshi Mase ,  Tsutomu Tanaka

    IPC分类号： H01R13422

    CPC分类号： H01R13/4362 ,  H01R13/4223

    摘要： A retainer (40) has first securing portions (48) for securing terminal fittings (30) by entering deformation-permitting spaces (17) to prevent the resilient deformation of locks (13) and second securing portions (50) for securing the terminal fittings (30) by directly engaging the terminal fittings (30). Thus, even if one of the first securing portions (48) and the second securing portions (50) are narrowed to make a connector smaller, the terminal fittings (30) can be locked securely by the other securing portions and an insufficient insertion can be detected.

    Microcomputer with built-in programmable nonvolatile memory
    55.
    发明授权
    Microcomputer with built-in programmable nonvolatile memory 有权

    公开(公告)号：US06587916B2

    公开(公告)日：2003-07-01

    申请号：US09948042

    申请日：2001-09-07

    申请人： Katsunobu Hongo ,  Tsutomu Tanaka ,  Toshihiro Sezaki ,  Hiroyuki Kimura ,  Mikio Kamiya ,  Yasuhiro Ami ,  Kunio Tani ,  Tomohisa Iba

    发明人： Katsunobu Hongo ,  Tsutomu Tanaka ,  Toshihiro Sezaki ,  Hiroyuki Kimura ,  Mikio Kamiya ,  Yasuhiro Ami ,  Kunio Tani ,  Tomohisa Iba

    IPC分类号： G06F1300

    CPC分类号： G06F15/7814

    摘要： A microcomputer comprises: a flash memory for storing rewriting control F/W and user S/F; a command register for specifying content of rewriting control; a address register to be subjected to rewriting-control; a data register for specifying data to be written; a power-supply pump circuit in the flash memory; and a control signal register for specifying/outputting a control signal to a memory decoder. A CPU of the microcomputer is capable of accessing these four registers to perform writing or reading. A given bit of the control signal register corresponds to a given control signal. A value written to the register becomes a control signal that will be directly supplied to both of the power supply circuit and the memory decoder, in the flash memory, to control them. By rewriting a set value of this control signal register using the rewriting control F/W according to a specified sequence, processing such as “erase” and “program” of the flash memory is performed. As a result, a layout area of an automatic sequence circuit is decreased, and a change in a sequence is also facilitated.

    Nonvolatile semiconductor memory and automatic erasing/writing method thereof
    56.
    发明授权
    Nonvolatile semiconductor memory and automatic erasing/writing method thereof 有权
    非易失性半导体存储器及其自动擦除/写入方法

    公开(公告)号：US06459640B1

    公开(公告)日：2002-10-01

    申请号：US09931243

    申请日：2001-08-17

    申请人： Kunio Tani ,  Tomohisa Iba ,  Tetsu Tashiro ,  Katsunobu Hongo ,  Tsutomu Tanaka ,  Mikio Kamiya ,  Toshihiro Sezaki ,  Hiroyuki Kimura

    发明人： Kunio Tani ,  Tomohisa Iba ,  Tetsu Tashiro ,  Katsunobu Hongo ,  Tsutomu Tanaka ,  Mikio Kamiya ,  Toshihiro Sezaki ,  Hiroyuki Kimura

    IPC分类号： G11C700

    CPC分类号： G11C29/846 ,  G11C16/0416 ,  G11C16/10 ,  G11C16/22

    摘要： A nonvolatile semiconductor memory includes a memory block composed of a memory array having a plurality of memory cells arranged in a matrix form, each of the memory cells being composed of a nonvolatile transistor; a memory decoder necessary for erasing/writing/reading data of the nonvolatile transistor in the memory array; a charge pump necessary for erasing/writing/reading the data of the nonvolatile transistor in the memory array; a register having each of a plurality of control signals for controlling the memory decoder and the charge pump allocated to register 1 bit; and an updating device for updating a content of the register by a data processor coupled to the register. By using this updating device to update the content of the register, the memory decoder and the charge pump are controlled, the data of the memory block is erased, and data is written in/read from the nonvolatile transistor. Thus a selecting device other than a laser can be applied for suppressing the increase of an LSI circuit size in the same chip as that for a dedicated control circuit, verifying the disconnected state of a FUSE circuit in the memory, and trimming the FUSE circuit.

    摘要翻译： 非易失性半导体存储器包括由具有以矩阵形式布置的多个存储单元的存储器阵列组成的存储块，每个存储单元由非易失性晶体管构成; 用于擦除/写入/读取存储器阵列中的非易失性晶体管的数据所需的存储器解码器; 用于擦除/写入/读取存储器阵列中的非易失性晶体管的数据所需的电荷泵; 具有用于控制分配给寄存器1位的存储器解码器和电荷泵的多个控制信号中的每一个的寄存器; 以及更新装置，用于通过耦合到所述寄存器的数据处理器来更新所述寄存器的内容。 通过使用该更新装置来更新寄存器的内容，对存储器解码器和电荷泵进行控制，擦除存储块的数据，并且从非易失性晶体管写入/读取数据。 因此，可以应用激光以外的选择装置来抑制与专用控制电路相同的芯片中的LSI电路尺寸的增加，验证存储器中的FUSE电路的断开状态以及修整FUSE电路。

    Dilute remote plasma clean
    57.
    发明授权
    Dilute remote plasma clean 有权
    稀释远程等离子体清洁

    公开(公告)号：US06329297B1

    公开(公告)日：2001-12-11

    申请号：US09553694

    申请日：2000-04-21

    申请人： Kenneth E. Balish ,  Thomas Nowak ,  Tsutomu Tanaka ,  Mark Beals

    发明人： Kenneth E. Balish ,  Thomas Nowak ,  Tsutomu Tanaka ,  Mark Beals

    IPC分类号： H01L2100

    CPC分类号： H01J37/3244 ,  H01J2237/335 ,  Y10S156/916

    摘要： A method and apparatus for enhancing the etch characteristics of a plasma formed in a remote plasma generator. A plasma formed in a remote plasma generator (27) is flown through a tube (62) to a plenum (60) where it is diluted to form a plasma mixture before flowing the plasma mixture into a processing chamber (15). The plasma mixture is used to clean deposits from the interior surfaces of the processing chamber, or can be used to perform an etch step on a process wafer within the processing chamber. In one embodiment, a plasma formed from NF3 is diluted with N2 to etch residue from the surfaces of a processing chamber used to deposit silicon oxide glass. Diluting the plasma increased the etching rate and made the etching rate more uniform across the diameter of the processing chamber.

    摘要翻译： 一种用于增强在远程等离子体发生器中形成的等离子体的蚀刻特性的方法和装置。 形成在远程等离子体发生器（27）中的等离子体通过管（62）流到增压室（60），在其中稀释以形成等离子体混合物，然后将等离子体混合物流入处理室（15）。 等离子体混合物用于从处理室的内表面清洁沉积物，或者可以用于在处理室内的处理晶片上进行蚀刻步骤。 在一个实施方案中，用N 2稀释由NF 3形成的等离子体，以从用于沉积氧化硅玻璃的处理室的表面蚀刻残留物。 稀释等离子体增加了蚀刻速率，并且使蚀刻速率在处理室的直径上更均匀。