公开(公告)号：US20100085795A1

公开(公告)日：2010-04-08

申请号：US12408996

申请日：2009-03-23

申请人： Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

发明人： Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/416

CPC分类号： G11C11/16 ,  G11C11/1659 ,  G11C11/1675

摘要： An apparatus and method for compensating for asymmetric write current in a non-volatile unit cell. The unit cell comprises a switching device and an asymmetric resistive sense element (RSE), such as an asymmetric resistive random access memory (RRAM) element or an asymmetric spin-torque transfer random access memory (STRAM) element. The RSE is physically oriented within the unit cell relative to the switching device such that a hard direction for programming the RSE is aligned with an easy direction of programming the unit cell, and an easy direction for programming the RSE is aligned with a hard direction for programming the unit cell.

摘要翻译： 一种用于补偿非易失性单元中不对称写入电流的装置和方法。 单位单元包括开关装置和非对称电阻感测元件（RSE），诸如非对称电阻随机存取存储器（RRAM）元件或非对称自旋转矩传递随机存取存储器（STRAM）元件。 RSE相对于开关装置在物理上定位在单位单元内，使得用于编程RSE的硬方向与单元单元的简单编程方向对齐，并且用于编程RSE的简单方向与硬方向对齐 编程单元格

公开(公告)号：US20110134688A1

公开(公告)日：2011-06-09

申请号：US13016445

申请日：2011-01-28

申请人： Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

发明人： Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

IPC分类号： G11C11/15 ,  H01L21/02 ,  H01L29/82

CPC分类号： G11C11/16 ,  G11C11/1659 ,  G11C11/1675

摘要： An apparatus and method for compensating for asymmetric write current in a non-volatile unit cell. The unit cell comprises a switching device and an asymmetric resistive sense element (RSE), such as an asymmetric resistive random access memory (RRAM) element or an asymmetric spin-torque transfer random access memory (STRAM) element. The RSE is physically oriented within the unit cell relative to the switching device such that a hard direction for programming the RSE is aligned with an easy direction of programming the unit cell, and an easy direction for programming the RSE is aligned with a hard direction for programming the unit cell.

摘要翻译： 一种用于补偿非易失性单元中不对称写入电流的装置和方法。 单位单元包括开关装置和非对称电阻感测元件（RSE），诸如非对称电阻随机存取存储器（RRAM）元件或非对称自旋转矩传递随机存取存储器（STRAM）元件。 RSE相对于开关装置在物理上定位在单位单元内，使得用于编程RSE的硬方向与单元单元的简单编程方向对齐，并且用于编程RSE的简单方向与硬方向对齐 编程单元格

公开(公告)号：US08107282B2

公开(公告)日：2012-01-31

申请号：US13016445

申请日：2011-01-28

申请人： Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

发明人： Wenzhong Zhu ,  Yong Lu ,  Xiaobin Wang ,  Yiran Chen ,  Alan Xuguang Wang ,  Xiaohua Lou ,  Haiwen Xi

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C11/1659 ,  G11C11/1675

摘要： An apparatus and method for compensating for asymmetric write current in a non-volatile unit cell. The unit cell comprises a switching device and an asymmetric resistive sense element (RSE), such as an asymmetric resistive random access memory (RRAM) element or an asymmetric spin-torque transfer random access memory (STRAM) element. The RSE is physically oriented within the unit cell relative to the switching device such that a hard direction for programming the RSE is aligned with an easy direction of programming the unit cell, and an easy direction for programming the RSE is aligned with a hard direction for programming the unit cell.

公开(公告)号：US20100053822A1

公开(公告)日：2010-03-04

申请号：US12200034

申请日：2008-08-28

申请人： Haiwen Xi ,  Paul Anderson ,  Zheng Gao ,  Xiaobin Wang ,  Dimitar V. Dimitrov ,  Song S. Xue

发明人： Haiwen Xi ,  Paul Anderson ,  Zheng Gao ,  Xiaobin Wang ,  Dimitar V. Dimitrov ,  Song S. Xue

IPC分类号： G11B5/127

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11C11/155 ,  G11C11/161 ,  G11C11/1675

摘要： A magnetic tunnel junction cell that has a ferromagnetic pinned layer, a ferromagnetic free layer, and a non-magnetic barrier layer therebetween. The free layer has a larger area than the pinned layer, in some embodiments at least twice the size of the pinned layer, in some embodiments at least three times the size of the pinned layer, and in yet other embodiments at least four times the size of the pinned layer. The pinned layer is offset from the center of the free layer. The free layer has a changeable vortex magnetization, changeable between clockwise and counterclockwise directions.

摘要翻译： 磁性隧道结电池，其具有铁磁性钉扎层，铁磁性自由层和它们之间的非磁性阻挡层。 自由层具有比被钉扎层更大的面积，在一些实施例中为钉扎层的尺寸的至少两倍，在一些实施例中为被钉扎层的尺寸的至少三倍，并且在其它实施例中为至少四倍的尺寸 被钉扎层。 固定层从自由层的中心偏移。 自由层具有可变的涡流磁化，可在顺时针和逆时针方向之间改变。

公开(公告)号：US08400825B2

公开(公告)日：2013-03-19

申请号：US13491891

申请日：2012-06-08

申请人： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

发明人： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

IPC分类号： G11C11/00

CPC分类号： G11C11/1675 ,  G11C11/1659

摘要： Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.

摘要翻译： 具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。 存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或 与磁化方向成一定角度。

公开(公告)号：US20120250405A1

公开(公告)日：2012-10-04

申请号：US13491891

申请日：2012-06-08

申请人： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

发明人： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

IPC分类号： G11C11/16 ,  G11C11/14

CPC分类号： G11C11/1675 ,  G11C11/1659

摘要： Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.

摘要翻译： 具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。 存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或 与磁化方向成一定角度。

公开(公告)号：US20100034008A1

公开(公告)日：2010-02-11

申请号：US12199126

申请日：2008-08-27

申请人： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

发明人： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

IPC分类号： G11C11/22

CPC分类号： G11C11/1675 ,  G11C11/1659

摘要： Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.

摘要翻译： 具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。 存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或 与磁化方向成一定角度。

公开(公告)号：US08223532B2

公开(公告)日：2012-07-17

申请号：US12199126

申请日：2008-08-27

申请人： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

发明人： Xiaobin Wang ,  Haiwen Xi ,  Hongyue Liu ,  Insik Jin ,  Andreas Roelofs ,  Eileen Yan ,  Dimitar V. Dimitrov

IPC分类号： G11C11/00

CPC分类号： G11C11/1675 ,  G11C11/1659

摘要： Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.

摘要翻译： 具有磁隧道结电池的存储单元，其利用自旋转矩和电流感应磁场来辅助磁性隧道结电池自由层的磁化取向的切换。 存储单元包括用于使电流通过磁性隧道结单元的自旋转矩电流源，该自旋转矩电流源具有与磁化方位垂直的方向，并且还包括磁安培励磁电流源在正交或 与磁化方向成一定角度。

公开(公告)号：US08102691B2

公开(公告)日：2012-01-24

申请号：US12144705

申请日：2008-06-24

申请人： Haiwen Xi ,  Xiaobin Wang ,  Dimitar V. Dimitrov ,  Paul E. Anderson ,  Harry Liu ,  Song S. Xue ,  Andreas Roelofs ,  Markus Siegert

发明人： Haiwen Xi ,  Xiaobin Wang ,  Dimitar V. Dimitrov ,  Paul E. Anderson ,  Harry Liu ,  Song S. Xue ,  Andreas Roelofs ,  Markus Siegert

IPC分类号： G11C19/00

CPC分类号： G11C19/0808 ,  G11C11/14 ,  Y10S977/933

摘要： Magnetic shift registers in which data writing and reading is accomplished by moving the magnetic domain walls by electric current. Various embodiments of domain wall nodes or anchors that stabilize a domain wall are provided. In some embodiments, the wall anchors are elements separate from the magnetic track. In other embodiments, the wall anchors are disturbances in the physical configuration of the magnetic track. In still other embodiments, the wall anchors are disturbances in the material of the magnetic track.

摘要翻译： 磁性移位寄存器，其中通过电流移动磁畴壁来实现数据写入和读取。 提供了稳定域壁的畴壁节点或锚的各种实施例。 在一些实施例中，壁锚是与磁迹分离的元件。 在其他实施例中，壁锚是磁轨的物理构型的扰动。 在另外的其它实施例中，壁锚是磁迹材料中的干扰。

公开(公告)号：US07876595B2

公开(公告)日：2011-01-25

申请号：US12233760

申请日：2008-09-19

申请人： Haiwen Xi ,  Dimitar V. Dimitrov ,  Andreas Roelofs ,  Xiaobin Wang ,  Paul E Anderson ,  Hongyue Liu

发明人： Haiwen Xi ,  Dimitar V. Dimitrov ,  Andreas Roelofs ,  Xiaobin Wang ,  Paul E Anderson ,  Hongyue Liu

IPC分类号： G11C19/00

CPC分类号： G11C19/0841 ,  G11C11/14

摘要： A register having a track with a first electrode is at the first end to supply a current to the track in a first direction and a second electrode at the second end to supply a current to the track in a second direction, the second direction being opposite to the first direction. A first domain wall anchor and a second domain wall anchor are positioned proximate the track between the first electrode and the second electrode. Each of the domain wall anchors has a ferromagnetic pinned layer and a barrier layer proximate the track, with the barrier layer between the track and the ferromagnetic pinned layer. The ferromagnetic layer has a magnetization orientation pinned perpendicular to the magnetization orientation of the track.

摘要翻译： 具有带有第一电极的轨道的寄存器处于第一端，以沿第一方向向轨道提供电流，而第二端处的第二电极在第二方向上向轨道提供电流，第二方向相反 到第一个方向。 第一结构域壁锚和第二结构域锚固件位于第一电极和第二电极之间的轨道附近。 每个畴壁锚固件具有铁磁钉扎层和靠近轨道的阻挡层，阻挡层在轨道和铁磁性钉扎层之间。 铁磁层具有垂直于轨道的磁化取向钉扎的磁化取向。