公开(公告)号：US07663104B2

公开(公告)日：2010-02-16

申请号：US12038079

申请日：2008-02-27

申请人： Tomoharu Obuki ,  Hiroshi Toyama ,  Yasuhiro Mitsui ,  Munetoshi Fukui ,  Yasuhiko Nara ,  Tohru Ando ,  Katsuo Ooki ,  Tsutomu Saito ,  Masaaki Komori

发明人： Tomoharu Obuki ,  Hiroshi Toyama ,  Yasuhiro Mitsui ,  Munetoshi Fukui ,  Yasuhiko Nara ,  Tohru Ando ,  Katsuo Ooki ,  Tsutomu Saito ,  Masaaki Komori

IPC分类号： G01N23/00 ,  G21K7/00 ,  G01R31/302 ,  G01R31/305

CPC分类号： G01N23/225 ,  H01J2237/2449 ,  H01J2237/24564 ,  H01J2237/2817

摘要： An object of the present invention is to obtain a clear absorbed current image without involving the difference in gain of amplifier between inputs, from absorbed currents detected by using a plurality of probes and to improve measurement efficiency.In the present invention, a plurality of probes are brought in contact with a specimen. While irradiating the specimen with an electron beam, currents flowing in the probes are measured. Signals from at least two probes are input to a differential amplifier. An output of the differential amplifier is amplified. On the basis of the amplified output and scanning information of the electron beam, an absorbed current image is generated. According to the invention, a clear absorbed current image can be obtained without involving the difference in gain of amplifier between inputs. Thus, measurement efficiency in a failure analysis of a semiconductor device can be improved.

摘要翻译： 本发明的目的是获得清晰的吸收电流图像，而不涉及放大器在输入之间的增益差异，从吸收的电流通过使用多个探针检测并提高测量效率。 在本发明中，多个探针与试样接触。 在用电子束照射样品的同时，测量在探针中流动的电流。 至少两个探头的信号被输入到差分放大器。 差分放大器的输出被放大。 基于电子束的放大输出和扫描信息，产生吸收的当前图像。 根据本发明，可以获得清晰的吸收电流图像而不涉及放大器在输入之间的增益差。 因此，可以提高半导体器件的故障分析中的测量效率。

公开(公告)号：US20060087330A1

公开(公告)日：2006-04-27

申请号：US11258041

申请日：2005-10-26

申请人： Tsutomu Saito ,  Osamu Yamada ,  Eiichi Hazaki ,  Yasuhiko Nara ,  Hirofumi Sato ,  Yoshikazu Inada ,  Yoshinori Numata

发明人： Tsutomu Saito ,  Osamu Yamada ,  Eiichi Hazaki ,  Yasuhiko Nara ,  Hirofumi Sato ,  Yoshikazu Inada ,  Yoshinori Numata

IPC分类号： G01R31/302

CPC分类号： G01R31/307 ,  G01R31/2891

摘要： A defect inspecting apparatus in which a plurality of probes to measure electric characteristics of a sample including a fine wiring pattern are combined with a charged-particle beam unit includes graphic user interfaces (GUI) to simply control the plural probes. The apparatus includes a probe image processing unit to display the plural probes on a display; a selecting unit to select, from the probes displayed on the display, a probe to be operated; and a display unit to simultaneously display the probe selecting unit and information indicating that the selected probe is an operable probe, or the probe is in a non-selected state.

公开(公告)号：US08178840B2

公开(公告)日：2012-05-15

申请号：US12691331

申请日：2010-01-21

申请人： Tomoharu Obuki ,  Hiroshi Toyama ,  Yasuhiro Mitsui ,  Munetoshi Fukui ,  Yasuhiko Nara ,  Tohru Ando ,  Katsuo Ooki ,  Tsutomu Saito ,  Masaaki Komori

发明人： Tomoharu Obuki ,  Hiroshi Toyama ,  Yasuhiro Mitsui ,  Munetoshi Fukui ,  Yasuhiko Nara ,  Tohru Ando ,  Katsuo Ooki ,  Tsutomu Saito ,  Masaaki Komori

IPC分类号： G01N23/225 ,  H01J37/28

CPC分类号： G01N23/225 ,  H01J2237/2449 ,  H01J2237/24564 ,  H01J2237/2817

摘要： An object of the present invention is to obtain a clear absorbed current image without involving the difference in gain of amplifier between inputs, from absorbed currents detected by using a plurality of probes and to improve measurement efficiency.In the present invention, a plurality of probes are brought in contact with a specimen. While irradiating the specimen with an electron beam, currents flowing in the probes are measured. Signals from at least two probes are input to a differential amplifier. An output of the differential amplifier is amplified. On the basis of the amplified output and scanning information of the electron beam, an absorbed current image is generated. According to the invention, a clear absorbed current image can be obtained without involving the difference in gain of amplifier between inputs. Thus, measurement efficiency in a failure analysis of a semiconductor device can be improved.

摘要翻译： 本发明的目的是获得清晰的吸收电流图像，而不涉及放大器在输入之间的增益差异，从吸收的电流通过使用多个探针检测并提高测量效率。 在本发明中，使多个探针与试样接触。 在用电子束照射样品的同时，测量在探针中流动的电流。 至少两个探头的信号被输入到差分放大器。 差分放大器的输出被放大。 基于电子束的放大输出和扫描信息，产生吸收的当前图像。 根据本发明，可以获得清晰的吸收电流图像而不涉及放大器在输入之间的增益差。 因此，可以提高半导体器件的故障分析中的测量效率。

公开(公告)号：US07989766B2

公开(公告)日：2011-08-02

申请号：US12416914

申请日：2009-04-01

申请人： Yasuhiko Nara ,  Tohru Ando ,  Masahiro Sasajima ,  Tsutomu Saito ,  Tomoharu Obuki ,  Isamu Sekihara

发明人： Yasuhiko Nara ,  Tohru Ando ,  Masahiro Sasajima ,  Tsutomu Saito ,  Tomoharu Obuki ,  Isamu Sekihara

IPC分类号： H01J37/28

CPC分类号： H01J37/28 ,  H01J2237/24495 ,  H01J2237/24564 ,  H01J2237/24592 ,  H01J2237/2803

摘要： A sample inspection apparatus in which a fault in a semiconductor sample can be measured and analyzed efficiently. A plurality of probes are brought into contact with the sample. The sample is irradiated with an electron beam while a current flowing through the probes is measured. Signals from at least two probes are supplied to an image processing unit so as to form an absorbed electron current image. A difference between images obtained in accordance with a temperature change of the sample is obtained. A faulty point is identified from the difference between the images.

摘要翻译： 可以有效地测量和分析半导体样品中的故障的样本检查装置。 使多个探针与样品接触。 用电子束照射样品，同时测量流过探针的电流。 来自至少两个探针的信号被提供给图像处理单元，以形成吸收的电子流图像。 获得根据样品的温度变化获得的图像之间的差异。 根据图像之间的差异来识别错误点。

公开(公告)号：US20110093991A1

公开(公告)日：2011-04-21

申请号：US12977384

申请日：2010-12-23

申请人： Masanori Gunji ,  Katsunori Nakajima ,  Yasuhiko Nara ,  Tsutomu Saito ,  Shigeru Izawa

发明人： Masanori Gunji ,  Katsunori Nakajima ,  Yasuhiko Nara ,  Tsutomu Saito ,  Shigeru Izawa

IPC分类号： G01Q70/02

CPC分类号： G01R1/06705 ,  Y10T29/49826

摘要： An object of the present invention relates to an arrangement of a manufactured probe in a prober apparatus without being exposed to an atmospheric air.The present invention relates to a probe storage container which can supply a probe in a prober apparatus without being exposed to an atmospheric air. Preferably, the probe is stored in the probe storage container by removing an oxide film in a leading end portion of the probe in accordance with a dry treatment using an ion source or the like, without being exposed to the atmospheric air. In accordance with the present invention, it is possible to replace and attach the probe with respect to the prober apparatus without being exposed to the atmospheric air, and it is possible to avoid a formation of the oxide film on a surface of the probe. Further, a worker attaching the probe to the prober apparatus can work without being directly in contact with the probe, and it is possible to prevent the leading end portion of the probe from being broken. Accordingly, it is possible to stably measure an electric characteristic of a semiconductor device or the like on the wafer.

摘要翻译： 本发明的一个目的涉及一种制造的探针在探测设备中的布置，而不暴露于大气中。 探针存储容器本发明涉及一种探针存储容器，其可以在探测设备中提供探针而不暴露于大气中。 优选地，通过根据使用离子源等的干法处理而不暴露于大气中，通过在探针的前端部分除去氧化膜来将探针存储在探针存储容器中。 根据本发明，可以相对于探针装置替换和附接探针而不暴露于大气中，并且可以避免在探针的表面上形成氧化膜。 此外，将探头附接到探测器装置的工作者可以在不直接与探针接触的情况下工作，并且可以防止探针的前端部分破裂。 因此，可以稳定地测量晶片上的半导体器件等的电特性。

公开(公告)号：US20080204058A1

公开(公告)日：2008-08-28

申请号：US12027644

申请日：2008-02-07

申请人： Masanori GUNJI ,  Katsunori Nakajima ,  Yasuhiko Nara ,  Tsutomu Saito ,  Shigeru Izawa

发明人： Masanori GUNJI ,  Katsunori Nakajima ,  Yasuhiko Nara ,  Tsutomu Saito ,  Shigeru Izawa

IPC分类号： G01R1/067 ,  B23P11/00

CPC分类号： G01R1/06705 ,  Y10T29/49826

摘要： An object of the present invention relates to an arrangement of a manufactured probe in a prober apparatus without being exposed to an atmospheric air.The present invention relates to a probe storage container which can supply a probe in a prober apparatus without being exposed to an atmospheric air. Preferably, the probe is stored in the probe storage container by removing an oxide film in a leading end portion of the probe in accordance with a dry treatment using an ion source or the like, without being exposed to the atmospheric air. In accordance with the present invention, it is possible to replace and attach the probe with respect to the prober apparatus without being exposed to the atmospheric air, and it is possible to avoid a formation of the oxide film on a surface of the probe. Further, a worker attaching the probe to the prober apparatus can work without being directly in contact with the probe, and it is possible to prevent the leading end portion of the probe from being broken. Accordingly, it is possible to stably measure an electric characteristic of a semiconductor device or the like on the wafer.

摘要翻译： 本发明的一个目的涉及一种制造的探针在探测设备中的布置，而不暴露于大气中。 探针存储容器本发明涉及一种探针存储容器，其可以在探测设备中提供探针而不暴露于大气中。 优选地，通过根据使用离子源等的干法处理而不暴露于大气中，通过在探针的前端部分除去氧化膜来将探针存储在探针存储容器中。 根据本发明，可以相对于探针装置替换和附接探针而不暴露于大气中，并且可以避免在探针的表面上形成氧化膜。 此外，将探头附接到探测器装置的工作者可以在不直接与探针接触的情况下工作，并且可以防止探针的前端部分破裂。 因此，可以稳定地测量晶片上的半导体器件等的电特性。

公开(公告)号：US20080203297A1

公开(公告)日：2008-08-28

申请号：US12038079

申请日：2008-02-27

申请人： Tomoharu OBUKI ,  Hiroshi Toyama ,  Yasuhiro Mitsui ,  Munetoshi Fukui ,  Yasuhiko Nara ,  Tohru Ando ,  Katsuo Ooki ,  Tsutomu Saito ,  Masaaki Komori

发明人： Tomoharu OBUKI ,  Hiroshi Toyama ,  Yasuhiro Mitsui ,  Munetoshi Fukui ,  Yasuhiko Nara ,  Tohru Ando ,  Katsuo Ooki ,  Tsutomu Saito ,  Masaaki Komori

IPC分类号： G01N23/00

CPC分类号： G01N23/225 ,  H01J2237/2449 ,  H01J2237/24564 ,  H01J2237/2817

摘要： An object of the present invention is to obtain a clear absorbed current image without involving the difference in gain of amplifier between inputs, from absorbed currents detected by using a plurality of probes and to improve measurement efficiency.In the present invention, a plurality of probes are brought in contact with a specimen. While irradiating the specimen with an electron beam, currents flowing in the probes are measured. Signals from at least two probes are input to a differential amplifier. An output of the differential amplifier is amplified. On the basis of the amplified output and scanning information of the electron beam, an absorbed current image is generated. According to the invention, a clear absorbed current image can be obtained without involving the difference in gain of amplifier between inputs. Thus, measurement efficiency in a failure analysis of a semiconductor device can be improved.

摘要翻译： 本发明的目的是获得清晰的吸收电流图像，而不涉及放大器在输入之间的增益差异，从吸收的电流通过使用多个探针检测并提高测量效率。 在本发明中，使多个探针与试样接触。 在用电子束照射样品的同时，测量在探针中流动的电流。 至少两个探头的信号被输入到差分放大器。 差分放大器的输出被放大。 基于电子束的放大输出和扫描信息，产生吸收的当前图像。 根据本发明，可以获得清晰的吸收电流图像而不涉及放大器在输入之间的增益差。 因此，可以提高半导体器件的故障分析中的测量效率。

公开(公告)号：US20070284526A1

公开(公告)日：2007-12-13

申请号：US11790330

申请日：2007-04-25

申请人： Yasuhiko Nara ,  Masaaki Nojiri ,  Kouichi Hayakawa ,  Hiroyuki Shinada ,  Yukio Hagita

发明人： Yasuhiko Nara ,  Masaaki Nojiri ,  Kouichi Hayakawa ,  Hiroyuki Shinada ,  Yukio Hagita

IPC分类号： G01N23/00

CPC分类号： H01J37/28 ,  H01J2237/004 ,  H01J2237/2817

摘要： In a circuit pattern inspection apparatus, while an electron beam is irradiated onto a surface of a substrate having a plurality of chips where circuit patterns have been formed, a signal produced from the irradiated substrate is detected so as to form an image, and then, the formed image is compared with another image in order to detect a defect on the circuit patterns. Before the electron beam is irradiated onto either the chip or the plurality of chips so as to acquire the image for an inspection purpose, an electron beam is previously irradiated onto the region to be irradiated, so that charging conditions of the substrate to be inspected are arbitrarily controlled.

摘要翻译： 在电路图案检查装置中，当电子束照射到已经形成电路图案的具有多个芯片的基板的表面上时，检测从照射的基板产生的信号以形成图像， 将形成的图像与另一图像进行比较，以便检测电路图案上的缺陷。 在将电子束照射到芯片或多个芯片上以获取用于检查目的的图像之前，将电子束预先照射到要照射的区域上，使得要检查的基板的充电条件为 任意控制

公开(公告)号：US07223975B2

公开(公告)日：2007-05-29

申请号：US10843642

申请日：2004-05-12

申请人： Yasuhiko Nara ,  Masaaki Nojiri ,  Kouichi Hayakawa ,  Hiroyuki Shinada ,  Yukio Hagita

发明人： Yasuhiko Nara ,  Masaaki Nojiri ,  Kouichi Hayakawa ,  Hiroyuki Shinada ,  Yukio Hagita

IPC分类号： H01J37/28

CPC分类号： H01J37/28 ,  H01J2237/004 ,  H01J2237/2817

摘要： In a circuit pattern inspection apparatus, while an electron beam is irradiated onto a surface of a substrate having a plurality of chips where circuit patterns have been formed, a signal produced from the irradiated substrate is detected so as to form an image, and then, the formed image is compared with another image in order to detect a defect on the circuit patterns. Before the electron beam is irradiated onto either the chip or the plurality of chips so as to acquire the image for an inspection purpose, an electron beam is previously irradiated onto the region to be irradiated, so that charging conditions of the substrate to be inspected are arbitrarily controlled.

公开(公告)号：US20050109938A1

公开(公告)日：2005-05-26

申请号：US10957748

申请日：2004-10-05

申请人： Hiroshi Miyai ,  Ryuichi Funatsu ,  Taku Ninomiya ,  Yasuhiko Nara

发明人： Hiroshi Miyai ,  Ryuichi Funatsu ,  Taku Ninomiya ,  Yasuhiko Nara

IPC分类号： G01B15/04 ,  G01B15/08 ,  G01N21/956 ,  G01N23/225 ,  H01L21/66 ,  G01N21/00

CPC分类号： G01N23/2251 ,  G01N21/95607 ,  H01J2237/2817

摘要： A circuit pattern inspection method and apparatus capable of readily setting an optimum threshold value while it is confirmed that a defect detected when a defect is checked can be detected at what threshold value and capable of forming a recipe easily. A circuit pattern inspection of irradiating an electron beam to a specimen formed with a circuit pattern on a surface thereof, forming an inspection image and a reference image in accordance with a secondary electron of a reflected electron from the specimen, and acquiring an abnormal portion from a difference between the inspection image and the reference image, wherein a plurality of characteristic quantities of the abnormal portion are obtained from an image of the abnormal portion, and the abnormal portion is selectively displayed by changing an inspection threshold value virtually set for the characteristic quantities.

摘要翻译： 可以在确认在检查缺陷时检测到的缺陷能够容易地设定最佳阈值的电路图案检查方法和装置，并且能够容易地形成配方。 将电子束照射到其表面上形成有电路图案的试样的电路图案检查，根据来自试样的反射电子的二次电子形成检查图像和参考图像，并从 检查图像与参考图像之间的差异，其中从异常部分的图像获得异常部分的多个特征量，并且通过改变为特征量虚拟设置的检查阈值来选择性地显示异常部分 。