公开(公告)号：US08178840B2

公开(公告)日：2012-05-15

申请号：US12691331

申请日：2010-01-21

申请人： Tomoharu Obuki ,  Hiroshi Toyama ,  Yasuhiro Mitsui ,  Munetoshi Fukui ,  Yasuhiko Nara ,  Tohru Ando ,  Katsuo Ooki ,  Tsutomu Saito ,  Masaaki Komori

发明人： Tomoharu Obuki ,  Hiroshi Toyama ,  Yasuhiro Mitsui ,  Munetoshi Fukui ,  Yasuhiko Nara ,  Tohru Ando ,  Katsuo Ooki ,  Tsutomu Saito ,  Masaaki Komori

IPC分类号： G01N23/225 ,  H01J37/28

CPC分类号： G01N23/225 ,  H01J2237/2449 ,  H01J2237/24564 ,  H01J2237/2817

摘要： An object of the present invention is to obtain a clear absorbed current image without involving the difference in gain of amplifier between inputs, from absorbed currents detected by using a plurality of probes and to improve measurement efficiency.In the present invention, a plurality of probes are brought in contact with a specimen. While irradiating the specimen with an electron beam, currents flowing in the probes are measured. Signals from at least two probes are input to a differential amplifier. An output of the differential amplifier is amplified. On the basis of the amplified output and scanning information of the electron beam, an absorbed current image is generated. According to the invention, a clear absorbed current image can be obtained without involving the difference in gain of amplifier between inputs. Thus, measurement efficiency in a failure analysis of a semiconductor device can be improved.

摘要翻译： 本发明的目的是获得清晰的吸收电流图像，而不涉及放大器在输入之间的增益差异，从吸收的电流通过使用多个探针检测并提高测量效率。 在本发明中，使多个探针与试样接触。 在用电子束照射样品的同时，测量在探针中流动的电流。 至少两个探头的信号被输入到差分放大器。 差分放大器的输出被放大。 基于电子束的放大输出和扫描信息，产生吸收的当前图像。 根据本发明，可以获得清晰的吸收电流图像而不涉及放大器在输入之间的增益差。 因此，可以提高半导体器件的故障分析中的测量效率。

公开(公告)号：US08040146B2

公开(公告)日：2011-10-18

申请号：US12693266

申请日：2010-01-25

申请人： Takeshi Sunaoshi ,  Kouichi Kurosawa ,  Takeshi Sato ,  Masaaki Komori

发明人： Takeshi Sunaoshi ,  Kouichi Kurosawa ,  Takeshi Sato ,  Masaaki Komori

IPC分类号： G01R31/308

CPC分类号： G01R31/2874 ,  G01R31/311

摘要： There are provided an inspection apparatus and method that can locally perform sample temperature regulation, so that the sample drift can be suppressed. There are included a sample stage 109 that holds a semiconductor sample 118, multiple probes 106 used to measure electrical characteristics of a semiconductor device on the semiconductor sample 118, a power source that applies voltage and/or current to the probe 106, a detector that measures electrical characteristics of the semiconductor device on the sample with which the probe is brought into contact, and an electromagnetic wave irradiating mechanism that irradiates electromagnetic wave on a measurement section of the semiconductor sample 118.

摘要翻译： 提供了可以局部地进行样品温度调节的检查装置和方法，从而可以抑制样品漂移。 包括保持半导体样品118的样品台109，用于测量半导体样品118上的半导体器件的电特性的多个探针106，向探针106施加电压和/或电流的电源，检测器 测量与探针接触的样品上的半导体器件的电特性，以及在半导体样品118的测量部分上照射电磁波的电磁波照射机构。

公开(公告)号：US20080203297A1

公开(公告)日：2008-08-28

申请号：US12038079

申请日：2008-02-27

申请人： Tomoharu OBUKI ,  Hiroshi Toyama ,  Yasuhiro Mitsui ,  Munetoshi Fukui ,  Yasuhiko Nara ,  Tohru Ando ,  Katsuo Ooki ,  Tsutomu Saito ,  Masaaki Komori

发明人： Tomoharu OBUKI ,  Hiroshi Toyama ,  Yasuhiro Mitsui ,  Munetoshi Fukui ,  Yasuhiko Nara ,  Tohru Ando ,  Katsuo Ooki ,  Tsutomu Saito ,  Masaaki Komori

IPC分类号： G01N23/00

CPC分类号： G01N23/225 ,  H01J2237/2449 ,  H01J2237/24564 ,  H01J2237/2817

摘要： An object of the present invention is to obtain a clear absorbed current image without involving the difference in gain of amplifier between inputs, from absorbed currents detected by using a plurality of probes and to improve measurement efficiency.In the present invention, a plurality of probes are brought in contact with a specimen. While irradiating the specimen with an electron beam, currents flowing in the probes are measured. Signals from at least two probes are input to a differential amplifier. An output of the differential amplifier is amplified. On the basis of the amplified output and scanning information of the electron beam, an absorbed current image is generated. According to the invention, a clear absorbed current image can be obtained without involving the difference in gain of amplifier between inputs. Thus, measurement efficiency in a failure analysis of a semiconductor device can be improved.

摘要翻译： 本发明的目的是获得清晰的吸收电流图像，而不涉及放大器在输入之间的增益差异，从吸收的电流通过使用多个探针检测并提高测量效率。 在本发明中，使多个探针与试样接触。 在用电子束照射样品的同时，测量在探针中流动的电流。 至少两个探头的信号被输入到差分放大器。 差分放大器的输出被放大。 基于电子束的放大输出和扫描信息，产生吸收的当前图像。 根据本发明，可以获得清晰的吸收电流图像而不涉及放大器在输入之间的增益差。 因此，可以提高半导体器件的故障分析中的测量效率。

公开(公告)号：US06546034B2

公开(公告)日：2003-04-08

申请号：US09748175

申请日：2000-12-27

申请人： Masaaki Komori ,  Masahiro Aoki ,  Kazuhisa Uomi ,  Kazuhiko Hosomi

发明人： Masaaki Komori ,  Masahiro Aoki ,  Kazuhisa Uomi ,  Kazuhiko Hosomi

IPC分类号： H01S500

CPC分类号： H01S5/2231 ,  H01S5/2063 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/2222 ,  H01S5/2224

摘要： A semiconductor laser device includes a semiconductor substrate, a first cladding region on one side of the semiconductor substrate, an active layer region, and a second cladding region disposed on an opposite side of the semiconductor substrate. The active layer region is disposed between the semiconductor substrate and the second cladding region. A first semiconductor region is provided on either side of the active layer region in parallel with a traveling direction of light in the active layer region and has an electric resistance higher than that of the active layer region and a refractive index higher than that of the semiconductor substrate. An insulative or semi-insulative second semiconductor region is formed between the first semiconductor region and part of the second cladding region. A first electrode and a second electrode are provided for injecting a current into the active layer region.

摘要翻译： 半导体激光器件包括半导体衬底，半导体衬底的一侧上的第一包层区域，有源层区域和设置在半导体衬底的相对侧上的第二覆盖区域。 有源层区域设置在半导体衬底和第二覆盖区域之间。 第一半导体区域与有源层区域中的光的行进方向平行地设置在有源层区域的两侧，并且具有比有源层区域高的电阻，并且具有比半导体的折射率高的折射率 基质。 在第一半导体区域和第二包层区域的一部分之间形成绝缘或半绝缘的第二半导体区域。 提供第一电极和第二电极用于将电流注入到有源层区域中。

公开(公告)号：US5151122A

公开(公告)日：1992-09-29

申请号：US611839

申请日：1990-11-13

申请人： Kiminori Atsumi ,  Tomoki Saito ,  Masaaki Komori

发明人： Kiminori Atsumi ,  Tomoki Saito ,  Masaaki Komori

IPC分类号： A01N59/16 ,  A01N59/20 ,  A61K33/06 ,  A61K33/24 ,  C04B41/45 ,  C04B41/81

CPC分类号： C04B41/009 ,  A01N59/16 ,  A01N59/20 ,  A61K33/06 ,  A61K33/24 ,  C04B41/4584 ,  C04B41/81

摘要： An antibacterial ceramic material wherein at least one ceramic selected from the group consisting of hydroxyapatite, calcium phosphate, calcium hydrogen phosphate, calcium carbonate, calcium silicate and zeolite is made to absorb and tightly retain at least one liquified metal salt selected from the group consisting of salts of silver, copper and zinc, after which heat firing at elevated temperatures is performed.

摘要翻译： 一种抗菌陶瓷材料，其中使至少一种选自羟基磷灰石，磷酸钙，磷酸氢钙，碳酸钙，硅酸钙和沸石的陶瓷吸收并紧密地保留至少一种选自以下的液化金属盐： 银，铜和锌的盐，然后进行在高温下的热烧制。

公开(公告)号：US07663390B2

公开(公告)日：2010-02-16

申请号：US12146029

申请日：2008-06-25

申请人： Takeshi Sunaoshi ,  Kouichi Kurosawa ,  Takeshi Sato ,  Masaaki Komori

发明人： Takeshi Sunaoshi ,  Kouichi Kurosawa ,  Takeshi Sato ,  Masaaki Komori

IPC分类号： G01R31/02

CPC分类号： G01R31/2874 ,  G01R31/311

摘要： There are provided an inspection apparatus and method that can locally perform sample temperature regulation, so that the sample drift can be suppressed. There are included a sample stage 109 that holds a semiconductor sample 118, multiple probes 106 used to measure electrical characteristics of a semiconductor device on the semiconductor sample 118, a power source that applies voltage and/or current to the probe 106, a detector that measures electrical characteristics of the semiconductor device on the sample with which the probe is brought into contact, and an electromagnetic wave irradiating mechanism that irradiates electromagnetic wave on a measurement section of the semiconductor sample 118.

摘要翻译： 提供了可以局部地进行样品温度调节的检查装置和方法，从而可以抑制样品漂移。 包括保持半导体样品118的样品台109，用于测量半导体样品118上的半导体器件的电特性的多个探针106，向探针106施加电压和/或电流的电源，检测器 测量与探针接触的样品上的半导体器件的电特性，以及在半导体样品118的测量部分上照射电磁波的电磁波照射机构。

公开(公告)号：US20110291692A1

公开(公告)日：2011-12-01

申请号：US13147759

申请日：2010-01-20

申请人： Tohru Ando ,  Masaaki Komori ,  Takao Matsuura

发明人： Tohru Ando ,  Masaaki Komori ,  Takao Matsuura

IPC分类号： G01R31/26

CPC分类号： H01J37/244 ,  G01R31/307 ,  H01J37/20 ,  H01J2237/24592 ,  H01J2237/2817 ,  H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is an apparatus for automatically detecting a failure position on a specified wiring line. The apparatus and a method for automatically detecting the failure position even on a long wiring line by applying a probe and an electron beam onto a sample and using an image of the current absorbed by the sample are provided. The apparatus obtains an absorbed current image, while laterally moving at right angle with the probe applied onto the sample, and based on the obtained absorbed current image, correction is performed by means of both an image shift and a stage. Countermeasures are taken, using a stage not having a sample rotating stage, against factors including a hardware factor of not moving at a correct angle, such as backlash, the wiring line is accurately and continuously displayed even when the apparatus moves to the ends of the long wiring line, and the failure position is detected, while the apparatus automatically reciprocates several times between the both ends of the wiring line.

摘要翻译： 提供一种用于自动检测指定布线上的故障位置的装置。 提供了通过将探针和电子束施加到样品上并使用由样品吸收的电流的图像来自动检测在长布线上的故障位置的装置和方法。 该装置获得吸收的当前图像，同时与施加到样本上的探针成直角地横向移动，并且基于所获得的吸收的当前图像，通过图像偏移和阶段两者进行校正。 使用不具有样品旋转台的阶段，针对包括不以正确角度移动的硬件因素（例如齿隙）的因素进行对策，即使当装置移动到 并且检测到故障位置，同时设备在布线两端之间自动往复运动数次。

公开(公告)号：US07663104B2

公开(公告)日：2010-02-16

申请号：US12038079

申请日：2008-02-27

申请人： Tomoharu Obuki ,  Hiroshi Toyama ,  Yasuhiro Mitsui ,  Munetoshi Fukui ,  Yasuhiko Nara ,  Tohru Ando ,  Katsuo Ooki ,  Tsutomu Saito ,  Masaaki Komori

发明人： Tomoharu Obuki ,  Hiroshi Toyama ,  Yasuhiro Mitsui ,  Munetoshi Fukui ,  Yasuhiko Nara ,  Tohru Ando ,  Katsuo Ooki ,  Tsutomu Saito ,  Masaaki Komori

IPC分类号： G01N23/00 ,  G21K7/00 ,  G01R31/302 ,  G01R31/305

CPC分类号： G01N23/225 ,  H01J2237/2449 ,  H01J2237/24564 ,  H01J2237/2817

摘要： An object of the present invention is to obtain a clear absorbed current image without involving the difference in gain of amplifier between inputs, from absorbed currents detected by using a plurality of probes and to improve measurement efficiency.In the present invention, a plurality of probes are brought in contact with a specimen. While irradiating the specimen with an electron beam, currents flowing in the probes are measured. Signals from at least two probes are input to a differential amplifier. An output of the differential amplifier is amplified. On the basis of the amplified output and scanning information of the electron beam, an absorbed current image is generated. According to the invention, a clear absorbed current image can be obtained without involving the difference in gain of amplifier between inputs. Thus, measurement efficiency in a failure analysis of a semiconductor device can be improved.

摘要翻译： 本发明的目的是获得清晰的吸收电流图像，而不涉及放大器在输入之间的增益差异，从吸收的电流通过使用多个探针检测并提高测量效率。 在本发明中，多个探针与试样接触。 在用电子束照射样品的同时，测量在探针中流动的电流。 至少两个探头的信号被输入到差分放大器。 差分放大器的输出被放大。 基于电子束的放大输出和扫描信息，产生吸收的当前图像。 根据本发明，可以获得清晰的吸收电流图像而不涉及放大器在输入之间的增益差。 因此，可以提高半导体器件的故障分析中的测量效率。

公开(公告)号：US20090009203A1

公开(公告)日：2009-01-08

申请号：US12146029

申请日：2008-06-25

申请人： Takeshi SUNAOSHI ,  Kouichi KUROSAWA ,  Takeshi SATO ,  Masaaki KOMORI

发明人： Takeshi SUNAOSHI ,  Kouichi KUROSAWA ,  Takeshi SATO ,  Masaaki KOMORI

IPC分类号： G01R31/26

CPC分类号： G01R31/2874 ,  G01R31/311

摘要： There are provided an inspection apparatus and method that can locally perform sample temperature regulation, so that the sample drift can be suppressed. There are included a sample stage 109 that holds a semiconductor sample 118, multiple probes 106 used to measure electrical characteristics of a semiconductor device on the semiconductor sample 118, a power source that applies voltage and/or current to the probe 106, a detector that measures electrical characteristics of the semiconductor device on the sample with which the probe is brought into contact, and an electromagnetic wave irradiating mechanism that irradiates electromagnetic wave on a measurement section of the semiconductor sample 118.

摘要翻译： 提供了可以局部地进行样品温度调节的检查装置和方法，从而可以抑制样品漂移。 包括保持半导体样品118的样品台109，用于测量半导体样品118上的半导体器件的电特性的多个探针106，向探针106施加电压和/或电流的电源，检测器 测量与探针接触的样品上的半导体器件的电特性，以及在半导体样品118的测量部分上照射电磁波的电磁波照射机构。

公开(公告)号：US06606443B2

公开(公告)日：2003-08-12

申请号：US10231260

申请日：2002-08-30

申请人： Hiroshi Sato ,  Masahiro Aoki ,  Tsurugi Sudoh ,  Akira Taike ,  Tomonobu Tsuchiya ,  Masaaki Komori ,  Kazuhisa Uomi

发明人： Hiroshi Sato ,  Masahiro Aoki ,  Tsurugi Sudoh ,  Akira Taike ,  Tomonobu Tsuchiya ,  Masaaki Komori ,  Kazuhisa Uomi

IPC分类号： G02B610

CPC分类号： H01S5/1228 ,  B82Y20/00 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/0287 ,  H01S5/1014 ,  H01S5/106 ,  H01S5/2201 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/34306

摘要： An optical transmission device particularly adapted to a high-speed and large-capacity optical transmission system with a large optical output and excellent reflection resistance includes a waveguide-type optical element for emerging light and an optical transmission path that is to be optically coupled to the waveguide-type optical element. The waveguide-type optical element includes, at least in part thereof, a light-emitting portion having a gain-coupled diffraction grating and a mode-converting region integrated with the light-emitting portion.