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56 条记录 (耗时 0.026 秒)

    Super-junction semiconductor device
    51.
    发明授权
    Super-junction semiconductor device 有权
    超结半导体器件

    公开(公告)号：US06693323B2

    公开(公告)日：2004-02-17

    申请号：US10237828

    申请日：2002-09-09

    申请人： Takahiro Sato ,  Katsunori Ueno ,  Tatsuhiko Fujihira ,  Kenji Kunihara ,  Yasuhiko Onishi ,  Susumu Iwamoto

    发明人： Takahiro Sato ,  Katsunori Ueno ,  Tatsuhiko Fujihira ,  Kenji Kunihara ,  Yasuhiko Onishi ,  Susumu Iwamoto

    IPC分类号： H01L27148

    CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/66712

    摘要： A method of manufacture reduces costs and provides an excellent mass-productivity, a super-junction semiconductor device, that facilitates reducing times of heat treatment of the alternating conductivity type layer subjects, and preventing the characteristics of the alternating conductivity type layer from being impaired. A surface MOSFET structure, including p-type base regions, p+-type contact region in p-type base region, an n+-type source region in p-type base region, a gate electrode layer and a source electrode, is formed in the surface portion of an n-type semiconductor substrate through the usual double diffusion MOSFET manufacturing process. An oxide film is deposited by the CVD method on the back surface of the semiconductor substrate, a resist mask for defining p-type partition regions is formed on the oxide film, oxide film is removed by ion etching, and trenches are dug. The p-type epitaxial layers are buried in the trenches by selective epitaxial growth, and the remaining oxide film is removed. The portions of n-type semiconductor substrate not etched off remain as n-type drift regions, resulting in an alternating conductivity type layer formed of n-type drift regions and p-type partition regions. A drain electrode is deposited on the back surface of alternating conductivity type layer.

    摘要翻译： 一种制造方法降低了成本并且提供了优异的大规模生产率的超结半导体器件，其有助于减少交替导电型层对象的热处理时间，并且防止交替导电型层的特性受到损害。 表面MOSFET结构，包括p型基极区域中的p型基极区域，p +型接触区域，p型基极区域中的n +型源极区域，栅电极层和源极 电极通过通常的双扩散MOSFET制造工艺形成在n型半导体衬底的表面部分中。 通过CVD法在半导体衬底的背面上沉积氧化膜，在氧化膜上形成用于限定p型分隔区的抗蚀剂掩模，通过离子蚀刻去除氧化膜，并且挖出沟槽。 通过选择性外延生长将p型外延层埋入沟槽中，并除去剩余的氧化物膜。 未被蚀刻的n型半导体衬底的部分保持为n型漂移区，导致由n型漂移区和p型分隔区形成的交变导电型层。 在交替导电型层的背面上沉积漏电极。

    Cationic graft-copolymer
    55.
    发明授权
    Cationic graft-copolymer 失效
    阳离子接枝共聚物

    公开(公告)号：US4816540A

    公开(公告)日：1989-03-28

    申请号：US62364

    申请日：1987-06-12

    申请人： Yasuhiko Onishi

    发明人： Yasuhiko Onishi

    IPC分类号： C08F251/00 ,  C08G18/00

    CPC分类号： C08F251/00

    摘要： A cationic graft-copolymer comprising a unit derived from a cationic derivative of a water-soluble linear polymers having a hydroxyl groups, namely, a cationic polysaccharide of the following formula (1)[C.sub.6 H.sub.7 O.sub.2 (OH).sub.3-a (OX).sub.a ].sub.x H.sub.2 O (1)and the cationic derivative of polyvinylalcohol of the following formula (2) or the cationic derivative of the partial hydrolyzed polyvinylalcohol of the following formula (3)[CH.sub.2 CH(OH).sub.1-b (OX).sub.b ].sub.n (2)[CH.sub.2 CH(OH).sub.1-b-c (OX).sub.b (OAc).sub.c ].sub.n (3)and a unit derived from a polymerizable olefin compound of the following formula (4) ##STR1## (a, x, b, n, c, Ac, X, R.sub.4, R.sub.5, R.sub.6, and R.sub.7 are defined in claim 1-4); a process for preparing the same and a latex reagent made therefrom.

    摘要翻译： 包含衍生自具有羟基的水溶性线性聚合物的阳离子衍生物的单元的阳离子接枝共聚物，即下式（1）的阳离子多糖[C6H7O2（OH）3-a（OX）a] xH 2 O（1）和下式（2）的聚乙烯醇的阳离子衍生物或下式（3）的部分水解聚乙烯醇的阳离子衍生物[CH2CH（OH）1-b（OX）b] n（2） （4）（a，x，b，c）中的[CH 2 CH（OH）1-bc（OX）b（OAc）c] n（3）和衍生自下述可聚合烯烃化合物的单元 n，c，Ac，X，R4，R5，R6和R7如权利要求1-4中所定义）; 其制备方法和由其制备的胶乳试剂。