公开(公告)号：US5258059A

公开(公告)日：1993-11-02

申请号：US878570

申请日：1992-05-05

申请人： Toshio Yamaguchi ,  Yasushi Kobayashi

发明人： Toshio Yamaguchi ,  Yasushi Kobayashi

IPC分类号： B01D53/04 ,  B01D53/047 ,  C01B3/56

CPC分类号： B01D53/053 ,  B01D53/0423 ,  B01D2253/102 ,  B01D2253/106 ,  B01D2253/304 ,  B01D2257/702 ,  B01D2257/7025 ,  B01D2259/40032 ,  B01D2259/40037 ,  B01D2259/40041 ,  B01D2259/40056 ,  B01D2259/40069 ,  B01D2259/40073 ,  B01D2259/404 ,  B01D2259/4062 ,  B01D2259/4065 ,  B01D2259/4145 ,  Y02C20/20

摘要： Separation process of gaseous impurities from hydrogen gas by the known pressure swing adsorption method uses a holding column of the feed-in/feed-out sequence retaining type and at least three adsorption columns containing adsorbents. Each adsorption column is pressurized and depressurized in cycle to repeat adsorption and desorption, during which the holding column is used as an intermediate gas reservoir so that the efficiency of the separation of the impurity can be improved. In this invention, at least one of the following structures is used as the holding column:j) at least one row of spaces divided by partition walls and arranged in series;k) at least one hollow body; andl) at least one row of divided compartments arranged in series.

公开(公告)号：US4125133A

公开(公告)日：1978-11-14

申请号：US830344

申请日：1977-09-02

申请人： Yasushi Kobayashi ,  Akira Ito

发明人： Yasushi Kobayashi ,  Akira Ito

IPC分类号： D03D47/30

CPC分类号： D03D47/302

摘要： To facilitate high speed weaving, the size of all or some of the openings formed in a plurality of air guide comb teeth may be stepwisely increased, decreased or increased and then decreased and/or the angle of inclination of the frusto-conical surfaces which define the openings may be decreased in the case where the openings are decreased in size and vice versa.BACKGROUND OF THE INVENTIONThe present invention relates in general to an air jet loom and more particularly to an air guiding comb, composed of a row of aligned tooth members, which is used for directing the air stream which transports the weft yarn through the shed of warp yarns.SUMMARY OF THE INVENTIONIt is another object of the present invention to provide an air jet loom the weaving performance of which permits increased weaving speed.It is another object of the present invention to provide an air jet loom which can substantially eliminate an undesirable phenomenon in which the weft yarn is entangled with the warp yarns during the weft yarn insertion or picking into the shed of warp yarns.According to the present invention, there is provided an air guide comb for an air jet loom having an air jet nole through which a pressuried air is passed out with a weft yarn, and a row of aligned air guiding tooth members arranged in a manner that openings formed in the respective tooth members form an air passage through which the weft yarn is passed by the aid of the pressuried air, each of the openings being bounded by a frusto-conical surface of the corresponding tooth member with an apex of the surface pointing in the direction of weft yarn picking, which is characteried in that the row of aligned air guiding tooth members has at least first and second adjacent tooth members having respective openings which form a part of the air passage and are stepwisely different in sectional area and further in that the inclination angles of the frusto-conical surfaces defining the openings of the first and second tooth members, with respect to the longitudinal center line of the air passage, are different from each other.

摘要翻译： 为了促进高速织造，形成在多个导风梳齿中的全部或一些开口的尺寸可以逐步增加，减小或增加然后减小和/或限定的截头圆锥形表面的倾斜角 在开口尺寸减小的情况下，开口可能减小，反之亦然。

公开(公告)号：US4105546A

公开(公告)日：1978-08-08

申请号：US729174

申请日：1976-10-04

申请人： Yasushi Kobayashi ,  Minoru Iwata ,  Sadao Yoshida ,  Hisashi Akatuka

发明人： Yasushi Kobayashi ,  Minoru Iwata ,  Sadao Yoshida ,  Hisashi Akatuka

IPC分类号： C02F3/34 ,  C02C1/06

CPC分类号： C02F3/34

摘要： Waste waters, including those containing an oil, are treated with activated sludge and a hydrocarbon having from 4 to 20 carbon atoms per molecule or a hydrocarbon fraction containing the same.

公开(公告)号：US20140135075A1

公开(公告)日：2014-05-15

申请号：US14130348

申请日：2012-06-11

申请人： Yasushi Kobayashi

发明人： Yasushi Kobayashi

IPC分类号： H04M19/04

CPC分类号： H04M19/04 ,  H04M1/03 ,  H04M1/72569 ,  H04M19/041 ,  H04M2250/12 ,  H04R2217/03

摘要： A portable device includes plural parametric speakers that each output a sound having directivity in an individual specific direction; an attitude detecting unit that detects an attitude of the portable device; and a selecting unit that selects, from among the plural parametric speakers, a parametric speaker that outputs a sound having directivity whose direction falls within a predetermined range of an angle relative to a predetermined direction, on the basis of information on the attitude detected by the attitude detecting unit, and causes only the selected parametric speaker to output a predetermined notification sound.

摘要翻译： 便携式装置包括多个参数化扬声器，每个扬声器各自输出具有单个特定方向的方向性的声音; 姿态检测单元，其检测便携式设备的姿态; 以及选择单元，其从所述多个参数化扬声器中选择参数化扬声器，所述参数扬声器基于由所述多个参数说话者检测到的姿态的信息输出方向落在相对于预定方向的角度的预定范围内的方向性的声音 姿态检测单元，并且仅使所选择的参数化扬声器输出预定的通知声音。

公开(公告)号：US08554908B2

公开(公告)日：2013-10-08

申请号：US13094269

申请日：2011-04-26

申请人： Yuuki Tada ,  Yasushi Kobayashi ,  Kazuyuki Sakai ,  Kazuki Takahashi

发明人： Yuuki Tada ,  Yasushi Kobayashi ,  Kazuyuki Sakai ,  Kazuki Takahashi

IPC分类号： G06F15/173

CPC分类号： H04L12/66

摘要： A configuration information collection unit 1502 and a transaction collection unit 1503 collect a transaction as the configuration information about an IT system and communication data, and stores them in a CMDB 1504. A multiplexed application detection unit 1501 detects as a candidate for a multiplexed application the software of applications multiplexed by evaluating whether or not the application names of the software of applications deployed to a target to be monitored on the IT system match each other. Then, it detects a multiplexed application by evaluating whether or not one or more of evaluation items of a subnet in which a candidate for a multiplexed application is performed, transaction context as the data relating to the names of an applications performed before and after the candidate for a multiplexed application, and transaction information as the transmission/reception data of the candidate for a multiplexed application match each other.

摘要翻译： 配置信息收集单元1502和交易收集单元1503收集交易作为关于IT系统和通信数据的配置信息，并将其存储在CMDB 1504中。多路复用应用检测单元1501检测多路复用应用的候选 通过评估部署到IT系统上要监视的目标的应用软件的应用程序名称是否相互匹配来复用应用软件。 然后，通过评价是否执行了多路复用应用的候选的子网的评估项目中的一个或多个，检测多路复用的应用程序，作为与候选者之前和之后执行的应用的名称有关的数据的事务上下文 并且作为复用应用的候选者的发送/接收数据的交易信息彼此匹配。

公开(公告)号：US08378489B2

公开(公告)日：2013-02-19

申请号：US12544371

申请日：2009-08-20

申请人： Shiro Ozaki ,  Yoshihiro Nakata ,  Yasushi Kobayashi ,  Ei Yano

发明人： Shiro Ozaki ,  Yoshihiro Nakata ,  Yasushi Kobayashi ,  Ei Yano

IPC分类号： H01L29/40

CPC分类号： H01L21/76834 ,  C09D183/16 ,  H01L21/02123 ,  H01L21/02304 ,  H01L21/02343 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/3125

摘要： A semiconductor device of this invention has a copper wiring layer, of which a layer, to which a composition including at least one substance selected from the group consisting of ammonia and organic bases is applied, and a silicon-containing insulating film are sequentially superimposed on the copper wiring layer. Accordingly, semiconductor devices having insulating layers which adheres well to the copper serving as the wiring material can be obtained.

摘要翻译： 本发明的半导体器件具有铜布线层，其中施加了包含选自氨和有机碱的至少一种物质的组合物的层，并且将含硅绝缘膜依次叠加在 铜布线层。 因此，可以获得具有与用作布线材料的铜附着良好的绝缘层的半导体器件。

公开(公告)号：US08148778B2

公开(公告)日：2012-04-03

申请号：US13050496

申请日：2011-03-17

申请人： Yasushi Kobayashi ,  Manabu Imahashi

发明人： Yasushi Kobayashi ,  Manabu Imahashi

IPC分类号： H01L29/76 ,  H01L31/062

CPC分类号： H01L29/0878 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7816 ,  H01L29/7835

摘要： A semiconductor device includes: an n-type first well diffusion layer; an n-type second well diffusion layer; a p-type source diffusion layer; a p-type third well diffusion layer; a p-type drain diffusion layer; a gate insulating film; a gate electrode; a device isolation insulating film; and a buffer layer. The buffer layer is formed between the first well diffusion layer and the third well diffusion layer to be in contact with an end of the third well diffusion layer opposing the source diffusion layer, and extends from immediately below the gate insulating film to a position deeper than a peak of curvature of impurity concentration distribution of the third well diffusion layer. The buffer layer has an impurity concentration lower than an impurity concentration in the third well diffusion layer.

摘要翻译： 半导体器件包括：n型第一阱扩散层; n型第二阱扩散层; p型源极扩散层; p型第三阱扩散层; p型漏极扩散层; 栅极绝缘膜; 栅电极; 器件隔离绝缘膜; 和缓冲层。 缓冲层形成在第一阱扩散层和第三阱扩散层之间，以与第三阱扩散层的与源极扩散层相对的端部接触，并且从栅绝缘膜的正下方延伸到比第 第三阱扩散层的杂质浓度分布的曲率峰值。 缓冲层的杂质浓度低于第三阱扩散层中的杂质浓度。

公开(公告)号：US08081554B2

公开(公告)日：2011-12-20

申请号：US12858103

申请日：2010-08-17

申请人： Tomoaki Tojo ,  Masatoshi Yajima ,  Yasushi Kobayashi

发明人： Tomoaki Tojo ,  Masatoshi Yajima ,  Yasushi Kobayashi

IPC分类号： G11B7/16

CPC分类号： G11B7/1374 ,  G02B27/0037 ,  G02B27/141 ,  G11B7/1275 ,  G11B2007/0006

摘要： An optical pickup device includes: a light source for emitting light in a first wavelength range; an optical element for transmitting the light; a supporting member for supporting the optical element through an adhesive; a first light blocking member for blocking the light emitted from the light source from entering the adhesive when the optical element guides the emitted light to the optical disc; and a second light blocking member for blocking the light reflected from the optical disc from entering the adhesive when the optical element guides the reflected light to the detector unit. In this optical pickup device, at least one of the first and second light blocking member blocks the light in the first wavelength range and transmits light in a second wavelength range.

摘要翻译： 光拾取装置包括：用于发射第一波长范围的光的光源; 用于透射光的光学元件; 用于通过粘合剂支撑光学元件的支撑构件; 当光学元件将发射的光引导到光盘时，用于阻挡从光源发射的光进入粘合剂的第一遮光构件; 以及第二光阻挡构件，用于当光学元件将反射光引导到检测器单元时，阻挡从光盘反射的光进入粘合剂。 在该光学拾取装置中，第一和第二遮光构件中的至少一个阻挡第一波长范围内的光并透射第二波长范围的光。

公开(公告)号：US07932558B2

公开(公告)日：2011-04-26

申请号：US12424119

申请日：2009-04-15

申请人： Yasushi Kobayashi ,  Manabu Imahashi

发明人： Yasushi Kobayashi ,  Manabu Imahashi

IPC分类号： H01L29/76 ,  H01L31/062

CPC分类号： H01L29/0878 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7816 ,  H01L29/7835

摘要： A semiconductor device includes: an n-type first well diffusion layer; an n-type second well diffusion layer; a p-type source diffusion layer; a p-type third well diffusion layer; a p-type drain diffusion layer; a gate insulating film; a gate electrode; a device isolation insulating film; and a buffer layer. The buffer layer is formed between the first well diffusion layer and the third well diffusion layer to be in contact with an end of the third well diffusion layer opposing the source diffusion layer, and extends from immediately below the gate insulating film to a position deeper than a peak of curvature of impurity concentration distribution of the third well diffusion layer. The buffer layer has an impurity concentration lower than an impurity concentration in the third well diffusion layer.

摘要翻译： 半导体器件包括：n型第一阱扩散层; n型第二阱扩散层; p型源极扩散层; p型第三阱扩散层; p型漏极扩散层; 栅极绝缘膜; 栅电极; 器件隔离绝缘膜; 和缓冲层。 缓冲层形成在第一阱扩散层和第三阱扩散层之间，以与第三阱扩散层的与源极扩散层相对的端部接触，并且从栅绝缘膜的正下方延伸到比第 第三阱扩散层的杂质浓度分布的曲率峰值。 缓冲层的杂质浓度低于第三阱扩散层中的杂质浓度。

公开(公告)号：US20100320618A1

公开(公告)日：2010-12-23

申请号：US12862140

申请日：2010-08-24

申请人： Shirou Ozaki ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Yasushi Kobayashi

发明人： Shirou Ozaki ,  Yoshihiro Nakata ,  Tadahiro Imada ,  Yasushi Kobayashi

IPC分类号： H01L23/48 ,  H01L21/768 ,  B32B9/04

CPC分类号： H01L23/5329 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/3121 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76829 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  Y10T428/31663 ,  H01L2924/00

摘要： An interconnection substrate including: a first insulating film made of a silicon compound, an adhesion enhancing layer formed on the first insulating film, and a second insulting film made of a silicon compound and formed on the adhesion enhancing layer, wherein the first insulating film and the second insulating film are combined together with a component having a structure represented by General Formula (1) described below: Si—CXHY—Si  General Formula (1) where X is equal to 2Y and is an integer of 1 or more.

摘要翻译： 一种互连基板，包括：由硅化合物制成的第一绝缘膜，形成在第一绝缘膜上的粘合增强层和形成在粘合增强层上的由硅化合物制成的第二绝缘膜，其中第一绝缘膜和 第二绝缘膜与具有下述通式（1）表示的结构的成分组合在一起，其中X等于2Y，为1以上的整数的Si-CXHY-Si通式（1）。