公开(公告)号：US20090090940A1

公开(公告)日：2009-04-09

申请号：US11913578

申请日：2006-05-25

申请人： Takuya Tsurume ,  Nozomi Horikoshi

发明人： Takuya Tsurume ,  Nozomi Horikoshi

IPC分类号： H01L29/78

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L29/78603 ,  H01L29/78645

摘要： A semiconductor device is provided, which includes a first insulating layer over a first substrate, a transistor over the first insulating layer, a second insulating layer over the transistor, a first conductive layer connected to a source region or a drain region of the transistor through an opening provided in the second insulating layer, a third insulating layer over the first conductive layer, and a second substrate over the third insulating layer. The transistor comprises a semiconductor layer, a second conductive layer, and a fourth insulating layer provided between the semiconductor layer and the second conductive layer. One or plural layers selected from the first insulating layer, the second insulating layer, the third insulating layer, and the fourth insulating layer have a step portion which is provided so as not to overlap with the transistor.

摘要翻译： 提供了一种半导体器件，其包括在第一衬底上的第一绝缘层，在第一绝缘层上的晶体管，晶体管上的第二绝缘层，连接到晶体管的源极区或漏极区的第一导电层， 设置在第二绝缘层中的开口，在第一导电层上方的第三绝缘层，以及位于第三绝缘层上的第二基板。 晶体管包括半导体层，第二导电层和设置在半导体层和第二导电层之间的第四绝缘层。 从第一绝缘层，第二绝缘层，第三绝缘层和第四绝缘层选择的一个或多个层具有设置成不与晶体管重叠的台阶部分。

公开(公告)号：US20070262403A1

公开(公告)日：2007-11-15

申请号：US11793199

申请日：2006-01-18

申请人： Takuya Tsurume

发明人： Takuya Tsurume

IPC分类号： H01L31/02 ,  H01L21/3205

CPC分类号： H01L29/78 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1266 ,  H01L27/13 ,  H01L2221/68359 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2924/01025 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： An object of the prevent invention is to provide a semiconductor device having a conductive film, which sufficiently serves as an antenna, and a method for manufacturing thereof. The semiconductor device has an element formation layer including a transistor, which is provided over a substrate, an insulating film provided on the element formation layer, and a conductive film serving as an antenna, which is provided on the insulating film. The insulating film has a groove. The conductive film is provided along the surface of the insulating film and the groove. The groove of the insulating film may be provided to pass through the insulating film. Alternatively, a concave portion may be provided in the insulating film so as not to pass through the insulating film. A structure of the groove is not particularly limited, and for example, the groove can be provided to have a tapered shape, etc.

摘要翻译： 本发明的目的是提供一种具有充分用作天线的导电膜的半导体器件及其制造方法。 半导体器件具有包括设置在衬底上的晶体管，设置在元件形成层上的绝缘膜和用作天线的导电膜的元件形成层，其设置在绝缘膜上。 绝缘膜具有凹槽。 导电膜沿着绝缘膜和槽的表面设置。 可以提供绝缘膜的沟槽以通过绝缘膜。 或者，可以在绝缘膜中设置凹部以不通过绝缘膜。 槽的结构没有特别限制，例如可以将槽设置成具有锥形等。

公开(公告)号：US07268487B2

公开(公告)日：2007-09-11

申请号：US10662357

申请日：2003-09-16

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Takuya Tsurume ,  Yuugo Goto

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Takuya Tsurume ,  Yuugo Goto

IPC分类号： H05B33/12

CPC分类号： H01L51/529 ,  H01L27/3244 ,  H01L51/5246 ,  H01L51/5253

摘要： The present invention is to solve the problems of heat release and a metal material corrosion due to fluorine that are arisen in the case of using a film containing fluoroplastics (Teflon®) as a protective film for a light-emitting device. In the present invention, an inorganic film is formed after forming a light-emitting device, and a film containing fluoroplastics is formed thereon for avoiding contact with a metal material for forming the light-emitting device, as a result, a metal material corrosion due to fluorine in the film containing fluoroplastics can be prevented. In addition, the inorganic insulating film has a function of preventing fluorine in the film containing fluoroplastics from reacting to the metal material (barrier property), in addition, the inorganic insulating film is formed of a material having high heat conductivity for releasing heat generated in a light-emitting device.

摘要翻译： 本发明是为了解决在使用含有氟塑料（Teflon）的膜作为发光元件的保护膜的情况下产生的放热和金属材料腐蚀的问题。 在本发明中，在形成发光装置之后形成无机膜，并且在其上形成含有氟塑料的膜，以避免与用于形成发光装置的金属材料接触，结果导致金属材料腐蚀 可以防止含氟塑料的膜中的氟。 此外，无机绝缘膜具有防止含氟塑料的膜与金属材料反应的氟（阻隔性）的功能，另外，无机绝缘膜由具有高导热性的材料形成，用于释放在 发光装置。

公开(公告)号：US20060270236A1

公开(公告)日：2006-11-30

申请号：US11435804

申请日：2006-05-18

申请人： Naoto Kusumoto ,  Takuya Tsurume

发明人： Naoto Kusumoto ,  Takuya Tsurume

IPC分类号： H01L29/04 ,  H01L21/461 ,  C03C15/00 ,  H01L31/036

CPC分类号： H01L27/1266 ,  H01L27/1214

摘要： To provide a thin film integrated circuit at low cost and with thin thickness, which is applicable to mass production unlike the conventional glass substrate or the single crystalline silicon substrate, and a structure and a process of a thin film integrated circuit device or an IC chip having the thin film integrated circuit. A manufacturing method of a semiconductor device includes the steps of forming a first insulating film over one surface of a silicon substrate, forming a layer having at least two thin film integrated circuits over the first insulating film, forming a resin layer so as to cover the layer having the thin film integrated circuit, forming a film so as to cover the resin layer, grinding a backside of one surface of the silicon substrate which is formed with the layer having the thin film integrated circuit, and polishing the ground surface of the silicon substrate.

摘要翻译： 为了提供与传统的玻璃基板或单晶硅基板不同的低成本且薄型的薄膜集成电路，其适用于批量生产，以及薄膜集成电路器件或IC芯片的结构和工艺 具有薄膜集成电路。 半导体器件的制造方法包括以下步骤：在硅衬底的一个表面上形成第一绝缘膜，在第一绝缘膜上形成具有至少两个薄膜集成电路的层，形成树脂层以覆盖 层，具有薄膜集成电路，形成膜以覆盖树脂层，研磨由具有薄膜集成电路的层形成的硅衬底的一个表面的背面，并且研磨硅的表面 基质。

公开(公告)号：US20050112805A1

公开(公告)日：2005-05-26

申请号：US10967279

申请日：2004-10-19

申请人： Yuugo Goto ,  Yumiko Fukumoto ,  Toru Takayama ,  Junya Maruyama ,  Takuya Tsurume

发明人： Yuugo Goto ,  Yumiko Fukumoto ,  Toru Takayama ,  Junya Maruyama ,  Takuya Tsurume

IPC分类号： H01L29/786 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/32 ,  H01L51/52 ,  H01L51/56 ,  H01L21/00

CPC分类号： H01L27/1266 ,  G02F2001/13613 ,  H01L27/3246 ,  H01L51/524 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/56 ,  H01L2221/68368 ,  H01L2227/323 ,  H01L2227/326 ,  Y10S438/976 ,  Y10S438/977

摘要： It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing substrate, a part of a glass substrate is removed by scribing or performing laser irradiation on the glass substrate which leads to providing a trigger. Then, peeling is performed with a preferable yield by performing peeling from the removed part. In addition, a crack is prevented by covering the entire face except for a connection portion of a terminal electrode (including a periphery region of the terminal electrode) with a resin.

摘要翻译： 本发明的目的是提供一种不会损伤剥离层的剥离方法，并且不仅剥离具有小尺寸区域的剥离层，而且还可以剥离具有大尺寸区域的整个剥离层 产量。 在本发明中，在粘贴固定基板之后，通过在导致提供触发的玻璃基板上划线或进行激光照射来去除玻璃基板的一部分。 然后，通过从去除部分剥离而以优选的收率进行剥离。 此外，通过用树脂覆盖端子电极（包括端子电极的周边区域）的连接部分以外的整个面来防止裂纹。

公开(公告)号：US08951816B2

公开(公告)日：2015-02-10

申请号：US13635201

申请日：2011-02-28

申请人： Rena Tsuruoka ,  Hisao Ikeda ,  Takuya Tsurume ,  Tohru Sonoda ,  Satoshi Inoue

发明人： Rena Tsuruoka ,  Hisao Ikeda ,  Takuya Tsurume ,  Tohru Sonoda ,  Satoshi Inoue

IPC分类号： H01L21/00 ,  H01L51/00 ,  C23C14/04 ,  H01L51/56

CPC分类号： H01L51/0013 ,  C23C14/04 ,  C23C14/048 ,  H01L51/56

摘要： One embodiment of the present invention is a film forming method comprising: arranging a surface of a film formation substrate 10 including an absorption layer 12 on a first substrate 11 and a material layer 13 containing a film formation material and a surface of a film-formation target substrate 20 including a first layer 23 over a second substrate 22, so as to face each other; forming a second layer 13a containing the film formation material over the first layer 23 by performing first heat treatment on the material layer 13; and forming a third layer 13b containing the film formation material over the second layer 13a by performing second heat treatment on the material layer 13. In the second heat treatment, energy with a density higher than that in the first heat treatment is applied to the material layer.

摘要翻译： 本发明的一个实施方案是一种成膜方法，其包括：将包含吸收层12的成膜基板10的表面布置在第一基板11和包含成膜材料的材料层13和膜形成表面 目标基板20包括第二基板22上的第一层23，以便彼此面对; 通过对材料层13进行第一次热处理，在第一层23上形成含有成膜材料的第二层13a; 并在第二层13a上形成含有成膜材料的第三层13b，在材料层13上进行第二热处理。在第二热处理中，将密度高于第一热处理的能量施加到材料 层。

公开(公告)号：US08435811B2

公开(公告)日：2013-05-07

申请号：US13329624

申请日：2011-12-19

申请人： Kohei Yokoyama ,  Takahiro Ibe ,  Takuya Tsurume ,  Koichiro Tanaka

发明人： Kohei Yokoyama ,  Takahiro Ibe ,  Takuya Tsurume ,  Koichiro Tanaka

IPC分类号： H01L21/00 ,  H01L21/469

CPC分类号： H01L51/0013 ,  C23C14/048 ,  H01L27/3244

摘要： An evaporation donor substrate which enables only a desired evaporation material to be evaporated at the time of deposition by an evaporation method, and capable of reduction in manufacturing cost by increase in use efficiency of the evaporation material and deposition with high uniformity. An evaporation donor substrate capable of controlling laser light so that a desired position of an evaporation donor substrate is irradiated with the laser light in accordance with the wavelength of the emitted laser light at the time of evaporation. Specifically, an evaporation donor substrate in which a region which reflects laser light and a region which absorbs laser light at the time of irradiation with laser light having a wavelength of greater than or equal to 400 nm and less than or equal to 600 nm at the time of evaporation are formed.

摘要翻译： 一种蒸发供体基板，其通过蒸发法沉积时只能使期望的蒸发材料蒸发，并且能够通过提高蒸发材料的使用效率和高均匀性的沉积而降低制造成本。 一种能够控制激光的蒸发施主基板，使得根据在蒸发时发射的激光的波长，用激光照射蒸发供体基板的期望位置。 具体而言，在该激光的反射时，激光的反射区域和在波长为400nm以上且小于等于600nm的激光照射时的区域的蒸发供体基板 形成蒸发时间。

公开(公告)号：US08178958B2

公开(公告)日：2012-05-15

申请号：US11665548

申请日：2005-10-18

申请人： Kyosuke Ito ,  Junya Maruyama ,  Takuya Tsurume ,  Shunpei Yamazaki

发明人： Kyosuke Ito ,  Junya Maruyama ,  Takuya Tsurume ,  Shunpei Yamazaki

IPC分类号： H01L23/02

CPC分类号： H01L27/1266 ,  G06K19/07749 ,  H01L27/1214 ,  H01L27/13 ,  H01L2224/95001 ,  H01Q1/2225 ,  H01Q7/00 ,  Y10T29/49018

摘要： The present invention provides an antenna in that the adhesive intensity of a conductive body formed on a base film is increased, and a semiconductor device including the antenna. The invention further provides a semiconductor device with high reliability that is formed by attaching an element formation layer and an antenna, wherein the element formation layer is not damaged due to a structure of the antenna. The semiconductor device includes the element formation layer provided over a substrate and the antenna provided over the element formation layer. The element formation layer and the antenna are electrically connected. The antenna has a base film and a conductive body, wherein at least a part of the conductive body is embedded in the base film. As a method for embedding the conductive body in the base film, a depression is formed in the base film and the conductive body is formed therein.

摘要翻译： 本发明提供了一种天线，其特征在于，形成在基膜上的导电体的粘合强度增加，并且包括该天线的半导体器件。 本发明还提供一种通过附着元件形成层和天线形成的具有高可靠性的半导体器件，其中元件形成层由于天线的结构而不被损坏。 半导体器件包括设置在衬底上的元件形成层和设置在元件形成层上的天线。 元件形成层和天线电连接。 天线具有基膜和导电体，其中导电体的至少一部分嵌入基膜中。 作为将导电体嵌入基膜中的方法，在基膜中形成凹部，在其中形成导电体。

公开(公告)号：US08101990B2

公开(公告)日：2012-01-24

申请号：US11913578

申请日：2006-05-25

申请人： Takuya Tsurume ,  Nozomi Horikoshi

发明人： Takuya Tsurume ,  Nozomi Horikoshi

IPC分类号： H01L29/792

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L29/78603 ,  H01L29/78645

摘要： A semiconductor device is provided, which includes a first insulating layer over a first substrate, a transistor over the first insulating layer, a second insulating layer over the transistor, a first conductive layer connected to a source region or a drain region of the transistor through an opening provided in the second insulating layer, a third insulating layer over the first conductive layer, and a second substrate over the third insulating layer. The transistor comprises a semiconductor layer, a second conductive layer, and a fourth insulating layer provided between the semiconductor layer and the second conductive layer. One or plural layers selected from the first insulating layer, the second insulating layer, the third insulating layer, and the fourth insulating layer have a step portion which is provided so as not to overlap with the transistor.

摘要翻译： 提供了一种半导体器件，其包括在第一衬底上的第一绝缘层，在第一绝缘层上的晶体管，晶体管上的第二绝缘层，连接到晶体管的源极区或漏极区的第一导电层， 设置在第二绝缘层中的开口，在第一导电层上方的第三绝缘层，以及位于第三绝缘层上的第二基板。 晶体管包括半导体层，第二导电层和设置在半导体层和第二导电层之间的第四绝缘层。 从第一绝缘层，第二绝缘层，第三绝缘层和第四绝缘层选择的一个或多个层具有设置成不与晶体管重叠的台阶部分。

公开(公告)号：US07875530B2

公开(公告)日：2011-01-25

申请号：US11602261

申请日：2006-11-21

申请人： Tomoko Tamura ,  Tomoyuki Aoki ,  Takuya Tsurume ,  Koji Dairiki

发明人： Tomoko Tamura ,  Tomoyuki Aoki ,  Takuya Tsurume ,  Koji Dairiki

IPC分类号： H01L21/00 ,  H01L21/46 ,  H01L21/30

CPC分类号： H01L27/1266 ,  H01L27/1214

摘要： First semiconductor integrated circuits and second semiconductor integrated circuits arranged over a first substrate so that each of the second semiconductor integrated circuits is adjacent to one of the first semiconductor integrated circuits are transferred to additional substrates through multiple transfer operations. After the first semiconductor integrated circuits and the second semiconductor integrated circuits formed over the first substrate are transferred to the additional substrates (a fourth substrate and a fifth substrate) respectively, the circuits are divided into a semiconductor device corresponding to each semiconductor integrated circuit. The first semiconductor integrated circuits are arranged while keeping a distance from each other over the fourth substrate, and the second semiconductor integrated circuits are arranged while keeping a distance from each other over the fifth substrate. Thus, a large division margin of each of the fourth substrate and the fifth substrate can be obtained.

摘要翻译： 第一半导体集成电路和第二半导体集成电路布置在第一基板上，使得第二半导体集成电路中的每一个与第一半导体集成电路之一相邻，通过多次传送操作被传送到附加的基板。 在第一半导体集成电路和形成在第一衬底上的第二半导体集成电路分别转移到附加衬底（第四衬底和第五衬底）之后，将电路分成对应于每个半导体集成电路的半导体器件。 第一半导体集成电路在第四衬底上彼此保持距离的同时被布置，并且第二半导体集成电路被布置成在第五衬底上彼此保持距离。 因此，可以获得第四基板和第五基板中的每一个的大分割裕度。